CUB cells avoid this, but suffer from difficulties in inserting contacts in between bitlines, since the size of features this close to the surface are at or near the minimum feature size of the process technology (Kenner, pp. 33–42). The trench capacitor is constructed by etching a deep hole into the silicon substrate. The substrate volume surrounding the hole is then heavily doped to produce a buried n+ plate and to reduce resistance. A layer of oxide-nitride-oxide dielectric is grown or deposited, and finally the hole is filled by depositing doped polysilicon, which forms the top plate of the capacitor. The top of the capacitor is connected to the access transistor's drain terminal via a polysilicon strap (Kenner, pp. 42–44). A trench capacitor's depth-to-width ratio in DRAMs of the mid-2000s can exceed 50:1 (Jacob, p. 357). Trench capacitors have numerous advantages. Since the capacitor is buried in the bulk of the substrate instead of lying on its surface, the area it occupies can be minimized to what is required to connect it to the access transistor's drain terminal without decreasing the capacitor's size, and thus capacitance (Jacob, pp. 356–357). Alternatively, the capacitance can be increased by etching a deeper hole without any increase to surface area (Kenner, pg. 44). Another advantage of the trench capacitor is that its structure is under the layers of metal interconnect, allowing them to be more easily made planar, which enables it to be integrated in a logic-optimized process technology, which have many levels of interconnect above the substrate. The fact that the capacitor is under the logic means that it is constructed before the transistors are. This allows high-temperature processes to fabricate the capacitors, which would otherwise be degrading the logic transistors and their performance. This makes trench capacitors suitable for constructing embedded DRAM (eDRAM) (Jacob, p. 357). Disadvantages of trench capacitors are difficulties in reliably constructing the capacitor's structures within deep holes and in connecting the capacitor to the access transistor's drain terminal (Kenner, pg. 44). Historical cell designs First-generation DRAM ICs (those with capacities of 1 Kbit), of which the first was the Intel 1103, used a three-transistor, one-capacitor (3T1C) DRAM cell. By the second-generation, the requirement to reduce cost by fitting the same amount of bits in a smaller area led to the almost universal adoption of the 1T1C DRAM cell, although a couple of devices with 4 and 16 Kbit