make an Arrhenius plot, which allows for the deduction of defect activation energy for the thermal emission process. Usually this energy (sometimes called the defect energy level) together with the plot intercept value are defect parameters used for its identification or analysis. On samples with low free carrier density conductance transients have also been used for a DLTS analysis. In addition to the conventional temperature scan DLTS, in which the temperature is swept while pulsing the device at a constant frequency, the temperature can be kept constant and sweep the pulsing frequency. This technique is called the frequency scan DLTS. In theory the frequency and temperature scan DLTS should yield same results. Frequency scan DLTS is specifically useful when an aggressive change in temperature might damage the device. An example when frequency scan is shown to be useful is for studying modern MOS devices with thin and sensitive gate oxides. DLTS has been used to study quantum dots and perovskite solar cells. MCTS and minority-carrier DLTS For Schottky diodes, majority carrier traps are observed by the application of a reverse bias pulse, while minority carrier traps can be observed when the reverse bias voltage pulses are replaced with light pulses with the photon energy from the above semiconductor bandgap spectral range. This method is called Minority Carrier Transient Spectroscopy (MCTS). The minority carrier traps can be also observed for the p-n junctions by application of forward bias pulses, which inject minority carriers into the space charge region. In DLTS plots the minority carrier spectra usually are depicted with an opposite sign of amplitude in respect to the majority carrier trap spectra. Laplace DLTS There is an extension to DLTS known as a high resolution Laplace transform DLTS (LDLTS). Laplace DLTS is an isothermal technique in which the capacitance transients are digitized and averaged at a fixed temperature. Then the defect emission rates are obtained with a use of numerical methods being equivalent to the inverse Laplace transformation. The obtained emission rates are presented as a spectral plot. The main advantage of Laplace DLTS in comparison to conventional DLTS is the substantial increase in energy resolution understood here as an ability to distinguish very similar signals. Laplace DLTS in combination with uniaxial stress results in a splitting of the defect energy level. Assuming a random distribution of defects in non-equivalent orientations, the number of split lines and their intensity ratios reflect