iron-doped indium oxide, ferromagnetic at room temperature. The ferromagnetism appears to be mediated by carrier-electrons, in a similar way as the GaMnAs ferromagnetism is mediated by carrier-holes. Zinc oxide Manganese-doped zinc oxide n-type cobalt-doped zinc oxide Lanthanide-doped zinc oxide Magnesium oxide: p-type transparent MgO films with cation vacancies, combining ferromagnetism and multilevel switching (memristor) Titanium dioxide: Cobalt-doped titanium dioxide (both rutile and anatase), ferromagnetic above 400 K Chromium-doped rutile, ferromagnetic above 400 K Iron-doped rutile and iron-doped anatase, ferromagnetic at room temperature Copper-doped anatase Nickel-doped anatase Tin dioxide Manganese-doped tin dioxide, with Curie temperature at 340 K Iron-doped tin dioxide, with Curie temperature at 340 K Strontium-doped tin dioxide () – Dilute magnetic semiconductor. Can be synthesized an epitaxial thin film on a silicon chip. Europium(II) oxide, with a Curie temperature of 69K. The curie temperature can be more than doubled by doping (e.g. oxygen deficiency, Gd). Nitride semiconductors Chromium doped aluminium nitride Manganese doped gallium nitride and boron nitride (Ba,K)(Zn,Mn)2As2: Ferromagnetic semiconductor with tetragonal average structure and orthorhombic local structure. References External links Semiconductor material types Spintronics Ferromagnetic materials de:Halbleiter#Semimagnetische Halbleiter