desired material properties of silicon as a functional transistor. Below are several non-silicon substitutes in the fabrication of small nanometer transistors. One proposed material is indium gallium arsenide, or InGaAs. Compared to their silicon and germanium counterparts, InGaAs transistors are more promising for future high-speed, low-power logic applications. Because of intrinsic characteristics of III-V compound semiconductors, quantum well and tunnel effect transistors based on InGaAs have been proposed as alternatives to more traditional MOSFET designs. In the early 2000s, the atomic layer deposition high-κ film and pitch double-patterning processes were invented by Gurtej Singh Sandhu at Micron Technology, extending Moore's law for planar CMOS technology to 30 nm class and smaller. In 2009, Intel announced the development of 80-nm InGaAs quantum well transistors. Quantum well devices contain a material sandwiched between two layers of material with a wider band gap. Despite being double the size of leading pure silicon transistors at the time, the company reported that they performed equally as well while consuming less power. In 2011, researchers at Intel demonstrated 3-D tri-gate InGaAs transistors with improved leakage characteristics compared to traditional planar designs. The company claims that their design achieved the best electrostatics of any III-V compound semiconductor transistor. At the 2015 International Solid-State Circuits Conference, Intel mentioned the use of III-V compounds based on such an architecture for their 7 nm node. In 2011, researchers at the University of Texas at Austin developed an InGaAs tunneling field-effect transistors capable of higher operating currents than previous designs. The first III-V TFET designs were demonstrated in 2009 by a joint team from Cornell University and Pennsylvania State University. In 2012, a team in MIT's Microsystems Technology Laboratories developed a 22 nm transistor based on InGaAs which, at the time, was the smallest non-silicon transistor ever built. The team used techniques currently used in silicon device fabrication and aims for better electrical performance and a reduction to 10-nanometer scale. Biological computing research shows that biological material has superior information density and energy efficiency compared to silicon-based computing. Various forms of graphene are being studied for graphene electronics, e.g. graphene nanoribbon transistors have shown great promise since its appearance in publications in 2008. (Bulk graphene has a band gap of zero and thus cannot be used in transistors because of its constant conductivity, an inability to turn off. The zigzag edges of the nanoribbons introduce localized energy states in the conduction