it made possible the mass production of silicon integrated circuits (ICs). Building on his surface passivation method, he developed the metal oxide semiconductor (MOS) process, which he proposed could be used to build the first working silicon field-effect transistor (FET). The led to the invention of the MOSFET (MOS field-effect transistor) by Mohamed Atalla and Dawon Kahng in 1959. With its scalability, and much lower power consumption and higher density than bipolar junction transistors, the MOSFET became the most common type of transistor in computers, electronics, and communications technology such as smartphones. The US Patent and Trademark Office calls the MOSFET a "groundbreaking invention that transformed life and culture around the world". CMOS (complementary MOS) was invented by Chih-Tang Sah and Frank Wanlass at Fairchild Semiconductor in 1963. The first report of a floating-gate MOSFET was made by Dawon Kahng and Simon Sze in 1967. FinFET (fin field-effect transistor), a type of 3D multi-gate MOSFET, was developed by Digh Hisamoto and his team of researchers at Hitachi Central Research Laboratory in 1989. See also Deep-level transient spectroscopy (DLTS) Integrated circuit Reliability (semiconductor) Schön scandal Semiconductor device fabrication VLSI References