In newer process technologies RDF has a larger effect because the total number of dopants is fewer. Research works are being carried out in order to suppress the dopant fluctuation which leads to the variation of threshold voltage between devices undergoing same manufacturing process. See also MOSFET operation Channel length modulation References External links Online lecture on: Threshold Voltage and MOSFET Capacitances by Dr. Lundstrom Transistor modeling Electrical parameters MOSFETs fr:Transistor à effet de champ à grille métal-oxyde#Tension de seuil