comprises the main body of either p-type or n-type semiconductor with ohmic contacts at each end (terminals Base1 and Base2). A junction with the opposite semiconductor type is formed at a point along the length of the body for the third terminal (Emitter). Single-electron transistors (SET), consist of a gate island between two tunneling junctions. The tunneling current is controlled by a voltage applied to the gate through a capacitor. Nanofluidic transistor, controls the movement of ions through sub-microscopic, water-filled channels. Multigate devices: Tetrode transistor Pentode transistor Trigate transistor (prototype by Intel) Dual-gate field-effect transistors have a single channel with two gates in cascode, a configuration optimized for high-frequency amplifiers, mixers, and oscillators. Junctionless nanowire transistor (JNT), uses a simple nanowire of silicon surrounded by an electrically isolated "wedding ring" that acts to gate the flow of electrons through the wire. Nanoscale vacuum-channel transistor, when in 2012, NASA and the National Nanofab Center in South Korea were reported to have built a prototype vacuum-channel transistor in only 150 nanometers in size, can be manufactured cheaply using standard silicon semiconductor processing, can operate at high speeds even in hostile environments, and could consume just as much power as a standard transistor. Organic electrochemical transistor. Solaristor (from solar cell transistor), a two-terminal gate-less self-powered phototransistor. Device identification Three major identification standards are used for designating transistor devices. In each, the alphanumeric prefix provides clues to the type of the device. Joint Electron Device Engineering Council (JEDEC) The JEDEC part numbering scheme evolved in the 1960s in the United States. The JEDEC EIA-370 transistor device numbers usually start with 2N, indicating a three-terminal device. Dual-gate field-effect transistors are four-terminal devices, and begin with 3N. The prefix is followed by a two-, three- or four-digit number with no significance as to device properties, although early devices with low numbers tend to be germanium devices. For example, 2N3055 is a silicon n–p–n power transistor, 2N1301 is a p–n–p germanium switching transistor. A letter suffix, such as "A", is sometimes used to indicate a newer variant, but rarely gain groupings. Japanese Industrial Standard (JIS) In Japan, the JIS semiconductor designation (|JIS-C-7012), labels transistor devices starting with 2S, e.g., 2SD965, but sometimes the "2S" prefix is not marked on the package–a 2SD965 might only be marked D965 and a 2SC1815 might be listed by a supplier as simply C1815. This series sometimes has suffixes, such as R,