Thin-film transistor, used in LCD and OLED displays Floating-gate MOSFET (FGMOS), for non-volatile storage Power MOSFET, for power electronics lateral diffused MOS (LDMOS) Carbon nanotube field-effect transistor (CNFET, CNTFET), where the channel material is replaced by a carbon nanotube Ferroelectric field-effect transistor (Fe FET), uses ferroelectric materials Junction gate field-effect transistor (JFET), where the gate is insulated by a reverse-biased p–n junction Metal–semiconductor field-effect transistor (MESFET), similar to JFET with a Schottky junction instead of a p–n junction High-electron-mobility transistor (HEMT) Negative-Capacitance FET (NC-FET) Inverted-T field-effect transistor (ITFET) Fast-reverse epitaxial diode field-effect transistor (FREDFET) Organic field-effect transistor (OFET), in which the semiconductor is an organic compound Ballistic transistor (disambiguation) FETs used to sense the environment Ion-sensitive field-effect transistor (ISFET), to measure ion concentrations in solution, Electrolyte–oxide–semiconductor field-effect transistor (EOSFET), neurochip, Deoxyribonucleic acid field-effect transistor (DNAFET). Bipolar junction transistor (BJT): Heterojunction bipolar transistor, up to several hundred GHz, common in modern ultrafast and RF circuits Schottky transistor avalanche transistor Darlington transistors are two BJTs connected together to provide a high current gain equal to the product of the current gains of the two transistors Insulated-gate bipolar transistors (IGBTs) use a medium-power IGFET, similarly connected to a power BJT, to give a high input impedance. Power diodes are often connected between certain terminals depending on specific use. IGBTs are particularly suitable for heavy-duty industrial applications. The ASEA Brown Boveri (ABB) 5SNA2400E170100 , intended for three-phase power supplies, houses three n–p–n IGBTs in a case measuring 38 by 140 by 190 mm and weighing 1.5 kg. Each IGBT is rated at 1,700 volts and can handle 2,400 amperes Phototransistor. Emitter-switched bipolar transistor (ESBT) is a monolithic configuration of a high-voltage bipolar transistor and a low-voltage power MOSFET in cascode topology. It was introduced by STMicroelectronics in the 2000s, and abandoned a few years later around 2012. Multiple-emitter transistor, used in transistor–transistor logic and integrated current mirrors Multiple-base transistor, used to amplify very-low-level signals in noisy environments such as the pickup of a record player or radio front ends. Effectively, it is a very large number of transistors in parallel where, at the output, the signal is added constructively, but random noise is added only stochastically. Tunnel field-effect transistor, where it switches by modulating quantum tunneling through a barrier. Diffusion transistor, formed by diffusing dopants into semiconductor substrate; can be both BJT and FET. Unijunction transistor, can be used as simple pulse generators. It