a region that is similarly doped with the opposite carrier polarity (holes); these two similar, but oppositely doped regions effectively cancel out their mobile charge and develop a 'depleted region' that supports the high voltage during the off-state. On the other hand, during the on-state, the higher doping of the drift region allows for the easy flow of carriers, thereby reducing on-resistance. Commercial devices, based on this super junction principle, have been developed by companies like Infineon (CoolMOS products) and International Rectifier (IR). Wide band-gap semiconductors The major breakthrough in power semiconductor devices is expected from the replacement of silicon by a wide band-gap semiconductor. At the moment, silicon carbide (SiC) is considered to be the most promising. A SiC Schottky diode with a breakdown voltage of 1200 V is commercially available, as is a 1200 V JFET. As both are majority carrier devices, they can operate at high speed. A bipolar device is being developed for higher voltages (up to 20 kV). Among its advantages, silicon carbide can operate at a higher temperature (up to 400 °C) and has a lower thermal resistance than silicon, allowing for better cooling. See also Audio power amplifier LDMOS Power management integrated circuit Power MOSFET RF CMOS RF power amplifier Notes and references Notes References Semikron: Application Manual IGBT and MOSFET Power Modules, 2. Edition, 2015,ISLE Verlag, PDF-Version External links A review on Power Semiconductor Devices Interactive Power Electronics Seminar (iPES) Semiconductor devices Power electronics MOSFETs