provided the group with in-house production of gallium arsenide (GaAs) and indium phosphide (InP) substrates as well as adding capabilities for gallium antimonide (GaSb) and indium antimonide (InSb) for infrared applications. In 2006, the Group acquired the Electronic Materials Division from Emcore, providing IQE with its second US operation based in Somerset, NJ. This acquisition added further MOCVD capacity and complementary radio frequency (RF) products including heterojunction bipolar transistors (HBTs) and bipolar field-effect transistors (BiFETs). Also in 2006, the group made a further acquisition in the form of Singapore based MBET technologies which provided the group with complete multi-site, multi-technology and multi-product capabilities to form the world's largest independent contract manufacturer of epitaxial wafers. In 2009 the group added new free-standing gallium nitride (GaN) substrate capability with the acquisition of NanoGaN, a spin out start-up from the University of Bath. In 2012, IQE Group acquired Galaxy Compound Semiconductors, based in Spokane, Washington, US, and MBE epitaxy manufacturing unit of RFMD, based in Greensboro, North Carolina, US. The company made a stock exchange announcement on 12 November 2018 that shipments of its product would be materially reduced, also materially affecting profitability, causing the share price to plunge. References External links Companies based in Cardiff Silicon wafer producers 1999 initial public offerings Companies listed on the Alternative Investment Market