interconnects and points that relaxation in ultra-low-k-based interconnect structures, either due to adhesion failure or by porous dielectrics compliance, can prove to be damaging in the interconnects. She proposed solutions to prevent the relaxation by either mechanism. She also defined the parameters required to generate well-grounded quantitative predictions. Her research at IMEC highlighted the issue of uncontrolled diffusion of species in the dielectric pores, and directed the slowing of the projection for the industrial uptake of ultra-low-k dielectrics by the International Technology Roadmap for Semiconductors (ITRS). Iacopi’s research focus then shifted to semiconductor compatible growth and integration of semiconductor nanowires for electronic applications like Tunnel -Field Effect Transistors (T-FETs). Her main contribution has been the identification of indium as potential replacement for gold in the seeded nanowire growth by the vapour-liquid-solid (VLS) method. In an article published in 2008, Iacopi presented the size related characteristics of Indium-seeded silicon nanowires. She bases her research on the fact that the growth structure of nanowires change considerably when the size is in tens of nanometers. Iacopi suggested a model to counter this issue. In a similar article about the growth of silicon nanowires, Iacopi states that bottom-up manufacturing of nanowires for microelectronics is difficult as the characteristics of the wires would have to be controlled at the wafer -scale. She reviews the constraints for establishing a controlled process of a VLS growth of silicon nanowires and proposes suggestions for achieving the nanowire growth in a controlled manner. In early 2010s, Iacopi worked on the demonstration that cold plasmas can be an effective solution to slow down the diffusion of reactive species into porous media. She wrote an article in 2011 about the cryogenic plasmas and nanoporous materials. Through her research, Iacopi demonstrated that by processing plasma at cryogenic temperatures, the diffusion of plasma into nanoporous materials can be considerably suppressed. She further demonstrates that this suppression is controlled by reaction factors, radical recombination and sticking coefficient. While working at Griffith University, Iacopi invented a direct and selective process for the wafer-scale synthesis of graphene on silicon, with applications in integrated micro technologies, including nanophotonics, bio-compatible sensing, and energy storage. Iacopi wrote an article about graphene growth with a nickel-copper alloy as catalyst. She obtained a few-layers graphene by a solid-source growth method with nickel-copper alloy as a mediator onto silicon carbide on silicon. It was found that this was the most suitable method