FIELD OF THE INVENTION 
     This invention relates to integrated circuit memory devices and more particularly to redundancy circuits for integrated circuit memory devices. 
     BACKGROUND OF THE INVENTION 
     As the integration density of integrated circuit memory devices increases, redundancy systems may be used to increase device yields. In general, redundancy systems provide spare rows and/or spare columns of memory cells, and redundancy circuits for activating a spare row and/or column of memory cells. Accordingly, when an address signal specifying a memory cell of a defective row or a defective column is input, a spare row or column memory cell, rather than a normal memory cell, is selected by the input address. Redundancy systems are described, for example, in U.S. Pat. Nos. 5,742,547 to Lee, entitled“Circuits for Block Redundancy Repair of Integrated Circuit Memory Devices;” 5,761,138 to Lee et al., entitled “Memory Devices Having A Flexible Redundant Block Architecture” and 5,777,931 to Kwon et al., entitled “Synchronized Redundancy Decoding Systems and Methods for Integrated Circuit Memory Devices,” all of which are assigned to the assignee of the present application, the disclosures of all of which are hereby incorporated herein by reference. 
     FIG. 1 is a block diagram of a conventional redundancy circuit. Referring to FIG. 1, a plurality of unit redundancy circuits  11   13   1 ,  11   13   2 ,  11   13   3 , . . . control the respective redundant memory cell arrays. The unit redundancy circuits  11   13   1 ,  11   13   2 ,  11   13   3 , . . . are enabled by a power-up signal PWUP that is activated when power is supplied to the integrated circuit memory device and activate redundant signals REDL 1 , REDL 2 , REDL 3 , . . . for selecting addresses and the cells of the corresponding redundant memory cell arrays. A power supply voltage VCC is supplied to the respective redundancy circuits. 
     FIG. 2 shows an embodiment of a unit redundancy circuit of FIG.  1 . Referring to FIG. 2, a drain terminal N 24  of an NMOS transistor  23  becomes a low level by turning on the NMOS transistor  23  in response to the power-up signal PWUP which is a pulse signal activated to a high level when the power is supplied to the integrated circuit memory device. The drain node N 24  of the NMOS transistor  23  is inverted by an inverter  27 . 
     A conventional redundancy circuit as shown in FIG. 2 includes a plurality of transfer means  29   13   1 ,  29   13   2 , . . . for transferring address signals A 0 , A 1 , . . . and inverted address signals /A 0 , /A 1 , . . . . The transfer means  29   13   1 ,  29   13   2 , . . . may be embodied as transfer gates in order to transfer address signals and inverted address signals without undue delay. A transfer gate generally includes at least one NMOS transistor (Ni, i= 1 ,  2 , . . .) and one PMOS transistor (Pi, i= 1 ,  2 , . . .). The PMOS transistor Pi is gated by a signal from the drain node N 24  of the NMOS transistor  23 . The NMOS transistor Ni is gated by the output node N 28  of the inverter  27 . 
     Unfortunately, the transfer means  29   13   1 ,  29   13   2 , . . . realized by the PMOS transistor and the NMOS transistor of FIG. 2 may increase the layout area of the redundancy circuits in the integrated circuit memory device. Specifically, as the size of the memory device increases, the number of address signals also may increase. If the number of addresses for selecting the redundant memory cell of the redundant memory cell array is j, 4j MOS transistors may be used for transferring j address signals and j inverted address signals. Therefore, the MOS transistors and buses for gating the MOS transistors may increase in FIG. 2, thus increasing the layout area of the redundancy circuits in the integrated circuit memory device. 
     It is also known to provide redundancy circuits that do not require the use of transfer gates. See, for example, the above cited U.S. Pat. No. 5,777,931. Notwithstanding these advances, there continues to be a need for improved integrated circuit memory device redundancy circuits. 
     SUMMARY OF THE INVENTION 
     The present invention provides integrated circuit memory device redundancy circuits that include a plurality of field effect transistors and fuses, respective field effect transistor and a respective fuse being serially coupled between a respective address line and a logic circuit to generate a selection signal for a redundant memory cell in response to a predetermined address on the address lines. A pump-up circuit generates a pump-up voltage from a power supply voltage, wherein the pump-up voltage is greater than the power supply voltage. The pump-up voltage is applied to the gates of the field effect transistors to activate the redundancy circuit. Complementary transfer gates therefore are not needed, and the layout of the integrated circuit may be reduced. 
     The redundancy circuits preferably also include a plurality of second field effect transistors, wherein a respective (first) field effect transistor, a respective fuse and a respective second field effect transistor are serially coupled between a respective address line and ground voltage. The pump-up voltage is applied to the gates of the second plurality of field effect transistors to deactivate the redundancy circuit. An inverter may also be provided that is powered by the pump-up voltage. The inverter output is coupled to the gates of the first field effect transistors and the inverter input is coupled to the gates of the second field effect transistors. 
     An enable controlling circuit also may be provided that is coupled to the inverter input and that is responsive to a repair control signal. The enable controlling circuit preferably comprises a first fuse, a field effect transistor and a second fuse that are serially coupled between the pump-up voltage and ground voltage. The gate of the third field effect transistor is coupled to the repair control signal. 
     According to another aspect of the present invention, a redundancy circuit for an integrated circuit memory device comprises a repair controlling circuit that includes a repair fuse and that generates a repair control signal in response to opening of the repair fuse. The enable controlling circuit is responsive to the repair controlling circuit and includes an enable fuse to generate a redundant enable signal in response to the repair control signal and opening of the enable fuse. A redundancy signal generator is responsive to the enable controlling circuit to generate a selection signal for a redundant memory cell in response to receipt of an address of a defective memory cell. 
     More specifically, the enable controlling circuit includes the enable fuse, a field effect transistor and a stabilizing fuse that are serially coupled between first and second reference voltages. The repair control signal is coupled to the gate of the field effect transistor. The enable fuse and the field effect transistor define a node therebetween that is coupled to the redundancy signal generator, such that the redundancy signal generator is deactivated by the enable controlling circuit in response to opening of the stabilizing fuse. The redundancy signal generator preferably comprises the field effect transistors, fuses and pump-up circuit as described above. Accordingly, improved redundancy circuits may be provided. 
    
    
     BRIEF DESCRIPTION OF THE DRAWINGS 
     FIG. 1 is a block diagram of a conventional redundancy circuit; 
     FIG. 2 is a circuit diagram of an embodiment of a unit redundancy circuit of FIG. 1; 
     FIG. 3 is a block diagram of redundancy circuits according to the present invention; 
     FIG. 4 is a block diagram of a pump-up circuit; 
     FIG. 5 is a circuit diagram of a repair controlling circuit of FIG. 3; 
     FIG. 6 is a circuit diagram of a unit redundancy circuit according to a first embodiment of the present invention; 
     FIG. 7 is a circuit diagram of a unit redundancy circuit according to a second embodiment of the present invention. 
    
    
     DETAILED DESCRIPTION OF PREFERRED EMBODIMENTS 
     The present invention now will be described more fully hereinafter with reference to the accompanying drawings, in which preferred embodiments of the invention are shown. This invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein; rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art. Like numbers refer to like elements throughout. Moreover, each embodiment described and illustrated herein includes its complementary conductivity type embodiment as well. 
     FIG. 3 is a block diagram of redundancy circuits according to the present invention. A redundancy circuit according to the present invention can operate in an integrated circuit memory device having normal memory cells for storing data and redundant memory cells for repairing defective cells in the normal memory cells. Integrated circuit memory devices that replace defective memory cells with redundant memory cells are well known to those having skill in the art and need not be described further herein. 
     According to one embodiment of the invention, m normal memory cell arrays and n redundant memory cell arrays are included. The cells of the redundant memory cell array are decoded by j addresses. 
     Referring now to FIG. 3, a redundancy circuit according to the present invention includes a repair controlling circuit  31  and n unit redundancy circuits ( 33   13 i,i= 1 , 2 , 3 , . . . ,n). 
     When a defect generated in a cell of the normal memory cell array of the integrated circuit memory device is repaired, the repair controlling circuit  31  generates a repair control signal RECON that is activated in response to a power-up signal PWUP. The power-up signal PWUP is driven by a signal or a pulse that is activated to a high level when power is applied to the integrated circuit memory device. 
     The unit redundancy circuits ( 33   13 i,i= 1 , 2 , 3 , . . . ,n) are enabled by the activation of the repair control signal RECON. Namely, the plurality of unit redundancy circuits ( 33   13 i,i= 1 , 2 , 3 , . . . ,n) are controlled by the repair control signal RECON. 
     When the complementary address signals Ai and AiB of a defective cell of the normal memory cell array are received by the unit redundancy circuits ( 33   13 i,i= 1 ,  2 ,  3 , . . . ,n), a respective redundant signal (REDLi, i= 1 ,  2 ,  3 , . . . ,n) for selecting the cells of the redundant memory cell array, is activated. 
     FIG. 4 shows a pump-up circuit  41  that generates a pump-up voltage, also referred to as a step-up voltage, VPP that is greater than the power supply voltage VCC. The pump-up voltage VPP is applied to the unit redundancy circuits ( 33   13 i,i= 1 , 2 , 3 , . . . ,n), as will be described in detail below. 
     FIG. 5 shows a repair controlling circuit of FIG.  3 . Referring to FIG. 5, the repair controlling circuit  31  includes an NMOS transistor  51 , a repair fuse  53  and a latch circuit  55 . 
     The NMOS transistor  51  is turned on in response to the power-up signal PWUP. A source terminal is connected to ground voltage VSS. The conductance of the NMOS transistor  51  is lower than that of the repair fuse  53 . The repair fuse  53  supplies the power supply voltage VCC to a drain terminal N 52  of the NMOS transistor  51  and can be opened. The latch portion  55  inverts and latches the signal of the drain terminal N 52  of the NMOS transistor  51 , and generates the repair control signal RECON. 
     When there is no defective cell in the integrated circuit memory device, the repair fuse  53  is not opened. Therefore, even if power is supplied to the integrated circuit memory device and the power-up signal PWUP is activated to the high level, the voltage level of the drain terminal N 52  of the NMOS transistor  51  maintains a high level. Thus, the repair control signal RECON is not activated. 
     However, when there are defective cells in the integrated circuit memory device, the repair fuse  53  is opened, for example by cutting. Therefore, when power is supplied to the integrated circuit memory device and the power-up signal PWUP is activated to the high level, the voltage level of the drain terminal N 52  of the NMOS transistor  51  becomes low. Thus, the repair control signal RECON is activated to the high level. 
     FIG. 6 illustrates a first embodiment of a unit redundancy circuit of FIG.  3 . FIG. 7 illustrates a second embodiment of a unit redundancy circuit of FIG.  3 . The unit redundancy circuit of the first embodiment of FIG.  6  and the unit redundancy circuit of the second embodiment of FIG. 7 respectively include enable controlling circuits  61  and  71  and redundant circuits  63  and  73 , also referred to herein as “redundancy signal generators”. 
     Referring to FIG. 6, the enable controlling circuit  61  of the first embodiment has a latch structure comprising two NMOS transistors n 1  and n 2  and two PMOS transistors p 1  and p 2 . An output signal N 62   a  of an inverter  61   a  for inverting the repair control signal RECON is applied to the gate terminal of the NMOS transistor n 1 . The source terminal of the NMOS transistor n 1  is coupled to ground voltage VSS. An output signal N 62   b  of an inverter  61   b  which inverts the output signal N 62   a  of the inverter  61   a  is applied to the gate terminal of the NMOS transistor n 2 . The source terminal of the NMOS transistor n 2  is coupled to ground voltage VSS. 
     In the PMOS transistor p 1 , a first source/drain region is coupled to the pump-up voltage VPP, a second source/drain region is coupled to a first source/drain region N 64   a  of the NMOS transistor n 1 , and a gate is coupled to a first source/drain region N 64   b  of the NMOS transistor n 2 . In the PMOS transistor p 2 , a first source/drain region is coupled to pump-up voltage VPP, a second source/drain region is coupled to the first source/drain region N 64   b  of the NMOS transistor n 2 , and a gate is coupled to the first source/drain region N 64   a  of the NMOS transistor n 1 . The signal of the first source/drain region N 64   b  of the NMOS transistor n 2  and the second source/drain region of PMOS transistor p 2  defines a redundant enable signal /RENA 1  which is the output signal of the enable controlling circuit  61  and controls the redundant circuit  63 . 
     Therefore, when the integrated circuit memory device is in a repair mode and the repair control signal RECON is activated to the high level, the NMOS transistor n 1  is turned off and the NMOS transistor n 2  is turned on. Therefore, the voltage of the drain terminal N 64   b  of the NMOS transistor n 2  is lowered and the PMOS transistor p 1  is turned on. The voltage of the first source/drain region N 64   a  of the PMOS transistor p 1  is raised, thus turning off the PMOS transistor p 2 . Therefore, the redundant enable signal /RENA 1  is activated to a low level. The redundant circuit  63  is enabled. 
     The redundant circuit  63  is enabled by the activation of the redundant enable signal RENA 1  and generates a redundant signal REDLi that is activated when the addresses of the defective cells are received, for selecting a memory cell of the redundant memory cell array. The redundant signal REDLi represents signals REDL 1 , REDL 2 , . . . , REDLn of FIG. 3 for selecting the cells of the redundant memory cell arrays. 
     The redundant circuit  63  is comprised of a driving portion  65 , switching portions ( 67   13 i,i= 1 , 2 , 3 , . . . ,j), disable NMOS transistors ( 69   13 i,i= 1 , 2 , 3 , . . . ,j), and a logic circuit  70 . 
     The driving portions  65  outputs the pump-up voltage VPP in response to the activation of the redundant enable signal RENA 1 . Preferably, the driving portion  65  includes an inverter  65   a  connected to the pump-up voltage VPP. Therefore, an output node N 66  of the driving portion  65  generates the pump-up voltage VPP or the ground voltage VSS. 
     The switching portions ( 67   13 i,i= 1 , 2 , 3 , . . . ,j) are gated by the output signal on node N 66  of the driving portion  65 . The switching portions ( 67   13 i,i= 1 , 2 , 3 , . . . ,j) transfer corresponding address signals (Ai,i= 1 , 2 , 3 , . . . ,j) and inverted address signals (/Ai,i= 1 , 2 , 3 , . . . ,j). For example, the switching portion  67   13   1  transfers the corresponding address signal A 1  and the inverted address signal /A 1 . 
     In the disable NMOS transistors ( 69   13 i,i= 1 , 2 , 3 , . . . ,j), the redundant enable signal /RENA 1  is applied to the gate, the ground voltage VSS is connected to a first source/drain region, and outputs (N 68   13 i,i= 1 , 2 , 3 , . . . ,j) of the switching portions ( 67   13 i,i= 1 , 2 , 3 , . . . ,j) are connected to a second source/drain region. 
     The logic circuit  70  comprises a NAND gate  70   a  and an inverter  70   b.  The logic circuit  70  performs an AND operation on the signals of the outputs (N 68   13 i,i= 1 , 2 , 3 , . . . ,j) of the j switching portions and generates the redundant enable signal REDLi. 
     The structure and operation of the switching portions ( 67   13 i,i= 1 , 2 , 3 , . . . ,j) are as follows, taking the switching portion  67   13   1  as an example. The switching portion  67   13   1  includes first and second NMOS transistors  67   13   1   a  and  67   13   1   b  and first and second transfer fuses  67   13   1   c  and  67   13   1   d.    
     The first NMOS transistor  67   13   1   a  is gated by the output signal on node N 66  of the driving portion  65  and transfers an address signal A 1 . Namely, when the repair control signal RECON is activated to the high level, the output signal on node N 66  of the driving portion  65  is activated to the pump-up voltage VPP. The first NMOS transistor  67   13   1   a  is turned on and transfers the address signal A 1 . At this time, since the output signal on node N 66  of the driving portion  65  is activated to the pump-up voltage VPP, the first NMOS transistor  67   13   1   a  can transfer the address signal A 1  at a high level without loss of data. 
     The second NMOS transistor  67   13   1   b  is gated by the output signal on node N 66  of the driving portion  65  and transfers an inverted address signal /A 1 . The second NMOS transistor  67   13   1   b  can transfer the inverted address signal /A 1  at a high level without loss of data, like the first NMOS transistor  67   13   1   a.    
     The first transfer fuse  67   13   1   c  transfers the address signal A 1  that is transferred by the first transfer transistor  67   13   1   a  to the output N 68   13   1  of the switching portion  67   13   1 . The second transfer fuse  67   13   1   d  transfers the inverted address signal /A 1  that is transferred by the second transfer transistor  67   13   1   b  to the output N 68   13   1  of the switching portion  67   13   1 . The output N 68   13   1  of the switching portion  67   13   1  is connected to the second source/drain region of the disable NMOS transistor  69   13   1  and is connected to one input of the NAND gate  70   a.    
     Operation of a redundancy circuit according to the present invention will now be described. When the defective cells existing in the normal memory cell array are repaired, the repair fuse  53  (refer to FIG. 5) is cut or otherwise opened. In the redundant circuit  63 , the remaining fuses, excluding the fuses corresponding to the addresses of the cells to be repaired, are cut. For example, when the address of A 1  and the address of A 2  respectively repair the cells corresponding to high and low, the fuses ( 67   13   1   d,    67   13   2   c, . . . ) are cut. 
     When the fuses are cut as described above, the repair control signal RECON is activated to the high level when power is supplied to the integrated circuit memory device. The redundant enable signal /RENA 1  is activated to the low level. The output signal on node N 66  of the driving portion  65  is activated to the high level. Therefore, the disable NMOS transistors  69   13 i,i= 1 , 2 , 3 , . . . ,j) are turned off by the activation to the low level of the redundant enable signal /RENA 1 . The NMOS transistors  67   13   1   a,    67   13   1   b,    67   13   2   a,  and  67   13   2   b, . . . are turned on.    
     When the address of the cell to be repaired is received by the redundant circuit  63 , the signals of the input of the NAND gate  70   a  become high level. The redundant enable signal REDLi is activated to the high level. 
     According to the first embodiment of the unit redundancy circuit of the present invention, the address signals A 1 , A 2 , . . . and the inverted address signals /A 1 , /A 2 , . . . are transferred to the NMOS transistors  67   13   1   a,    67   13   1   b,    67   13   2   a,    67   13   2   b, . . . .  Therefore, 2j MOS transistors may be used for transferring j address signals and j inverted address signals. Since up to 4j MOS transistors may be used in some conventional redundancy circuits, up to 2j MOS transistors may be eliminated. When 13 address signals are used up to 26 MOS transistors and buses may be eliminated. Therefore, the layout area for construction of the redundancy circuit may be reduced compared to conventional redundancy circuits that use up to 4j MOS transistors. 
     However, two inverters and four MOS transistors are used for the enable controlling circuit  61  of the first embodiment in a latch structure. Moreover, leakage current may be generated from the pump-up voltage VPP to the ground voltage VSS. In the second embodiment of FIG. 7, the layout area may be reduced compared to the enable controlling circuit  61  of the first embodiment of FIG.  6 . 
     Referring to FIG. 7, a redundancy circuit of the second embodiment includes an enable controlling circuit  71  and a redundant circuit  73  also referred to as a “redundancy signal generator”. The enable controlling circuit  71  is enabled by cutting an enable fuse  71   c  and generates a redundant enable signal /RENA 2  activated in response to the repair control signal RECON for indicating that the integrated circuit memory device is in a repair mode. 
     The enable controlling circuit  71  includes a MOS transistor  71   a,  a stabilizing fuse  71   b,  and an enable fuse  71   c.  The MOS transistor  71   a  is an NMOS transistor that is turned on by the activation of the repair control signal RECON to the high level. The stabilizing fuse  71   b  supplies the ground voltage VSS to a first source/drain region N 72  of the MOS transistor  71   a  and can be cut. The enable fuse  71   c  supplies the pump-up voltage VPP to the second source/drain region of the MOS transistor  71   a  and can be cut. The signal of the second source/drain region of the MOS transistor  71   a  is the redundant enable signal /RENA 2  which is the output signal of the enable controlling circuit  71 . 
     When there is no defective cell in the corresponding normal memory cell array, the stabilizing fuse  71   b  is opened. When the stabilizing fuse  71   b  is opened, the redundant enable signal /RENA 2  is inactivated to the high level. 
     When there are defective cells in the corresponding normal memory cell array, the enable fuse  71   c  is opened. When the enable fuse  71   c  is opened and the repair control signal RECON is activated to the high level, the redundant enable signal /RENA 2  is activated to the low level. The redundant circuit  73  is enabled in response to the activation of the redundant enable signal /RENA 2 . 
     Since the structure and operation effect of the redundant circuit  73  are the same as those of the redundant circuit  63  of FIG. 6 of the first embodiment, a description thereof will not be repeated. 
     Referring to FIG. 7, the enable controlling circuit  71  of the second embodiment is comprised of a MOS transistor  71   a  and two fuses  71   b  and  71   c.  Therefore, the layout area of the enable controlling circuit  71  can be less than that of the enable controlling circuit  61 . In the enable controlling circuit  71  of the second embodiment, little leakage current may be generated since a current path is not provided between the pump-up voltage VPP and the ground voltage VSS during the operation. 
     In the drawings and specification, there have been disclosed typical preferred embodiments of the invention and, although specific terms are employed, they are used in a generic and descriptive sense only and not for purposes of limitation, the scope of the invention being set forth in the following claims.
Integrated circuit memory device redundancy circuits include a plurality of field effect transistors and fuses, a respective field effect transistor and a respective fuse being serially coupled between a respective address line and a logic circuit to generate a selection signal for a redundant memory cell in response to a predetermined address on the address lines. A pump-up circuit generates a pump-up voltage from a power supply voltage, wherein the pump-up voltage is greater than the power supply voltage. The pump-up voltage is applied to the gates of the field effect transistors to activate the redundancy circuit. According to another aspect, a redundancy circuit for an integrated circuit memory device comprises a repair controlling circuit that includes a repair fuse and that generates a repair control signal in response to opening of the repair control fuse. The enable controlling circuit is responsive to the repair controlling circuit and includes an enable fuse to generate a redundant enable signal in response to the repair control signal and opening of the enable fuse. A redundancy signal generator is responsive to the enable controlling circuit to generate a selection signal for a redundant memory cell in response to receipt of an address of a defective memory cell.