This is a Divisional of application Ser. No. 10/941,520, filed Sep. 15, 2004. 
    
    
     BACKGROUND OF THE INVENTION 
     1. Field of the Invention 
     The present invention relates to a liquid crystal display substrate, a method of manufacturing the same, and a liquid crystal display device having the same, and more particularly, it relates to such a substrate for transreflective liquid crystal display that can attain display in both a transmission mode and a reflection mode, a method of manufacturing the same, and a liquid crystal display device having the same. 
     2. Description of the Related Art 
     In recent years, liquid crystal devices are demanded to have higher performance. According to spread of mobile phones and mobile electronic devices, in particular, they are strongly demanded to attain low electric energy consumption and good usability out of doors. In order to attain low electric energy consumption and good usability out of doors, a reflection liquid crystal display device has been proposed, which has a pixel electrode having light reflection capability (a reflection electrode) and attains display by reflecting outside light to make a light source device unnecessary. 
     A thin film transistor (TFT) substrate of a reflection liquid crystal display device has a reflection electrode formed thereon with a metallic thin film having high light reflectivity. In the reflection liquid crystal display device, natural light incident thereon from the display screen side or light emitted by utilizing electricity is reflected by the reflection electrode on the TFT substrate, and the reflected light is used as a light source for liquid crystal display. The reflection electrode has an uneven surface. The uneven surface of the reflection electrode can be obtained by previously forming a light-sensitive resin layer having an uneven surface as an underlayer of the reflection electrode. The light incident from the display screen side is diffusely reflected by the uneven surface of the reflection electrode to obtain high luminance and a large viewing angle. 
     In the reflection liquid crystal display devices disclosed in JP-A-2002-221716 and JP-A-2002-296585, for example, a surface (an upper layer portion) of an overcoat layer formed with a resin material is applied to predetermined energy to make the upper layer portion be relatively cured in comparison to a lower layer portion, and then the overcoat layer is subjected to a heat treatment at a temperature equal to or higher than the heat curing point thereof, whereby wrinkled unevenness is formed on the surface of the overcoat layer. 
     A transreflective liquid crystal display device is also proposed, which can attain display in a transmission mode in addition to display in a reflection mode as similar to the reflection liquid crystal display device. In the transreflective liquid crystal display device, a transmission area having a transparent electrode formed with a light transmission material and a reflection area having a reflection electrode formed with a light reflection material are formed on each of pixel areas. The reflection electrode of the transreflective liquid crystal display device is formed on a resin layer having an uneven surface, as similar to the reflection liquid crystal display device. The transreflective liquid crystal display device referred herein includes a slightly transmission liquid crystal display device, which has an increased proportion of the reflection area in pixel areas to improve display luminance in a reflection mode, and a slightly reflection liquid crystal display device, which has an increased proportion of the transmission area in pixel areas to improve display luminance in a transmission mode. 
       FIG. 27A  is a plan view showing a constitution of a TFT substrate of a conventional transreflective liquid crystal display device.  FIG. 27B  is a cross sectional view showing the TFT substrate shown in  FIG. 27A  on line X-X. As shown in  FIGS. 27A and 27B , a glass substrate  110  of the TFT substrate  102  has a plurality of gate bus lines  112  extending in parallel to each other in the landscape direction in  FIG. 27A  (provided that only one of them is shown in  FIGS. 27A and 27B ). 
     An insulating film  130  is formed on the gate bus lines  112  on the entire surface of the substrate (which is sometimes referred to as a gate insulating film, depending on the position where the film is formed). A plurality of drain bus lines  114  are formed extending in parallel to each other in the portrait direction in  FIG. 27A  as intersecting the gate bus lines  112  with the insulating film  130  intervening therebetween (provided that only two of the drain bus lines  114  are shown in  FIG. 27A ). TFTs  120  are formed in the vicinities of positions where the gate bus lines  112  and the drain bus lines  114  are intersected each other. 
     The TFT  120  has an active semiconductor layer  128  formed with an a-Si layer on the insulating film  130 . A channel protective film  123  is formed on the active semiconductor layer  128 . The gate bus line  112  in an area immediately beneath the channel protective film  123  is configured to function as a gate electrode of the TFT  120 . The channel protective film  123  has thereon a drain electrode  121  drawn from the adjacent drain bus line  114  and a source electrode  122  disposed to face the drain electrode  121  through a predetermined gap. 
     A protective film  132  is formed on the TFT  120  on the entire surface of the substrate. A wrinkled resin layer  134  having wrinkled unevenness on the surface thereof is formed on the protective film  132  in a reflection area of each of the pixel areas. A reflection electrode  117  is formed on the wrinkled resin layer  134 . The reflection electrode  117  has a wrinkled uneven surface following the surface of the wrinkled resin layer  134 . The reflection electrode  117  and the wrinkled resin layer  134  are formed to cover the TFT  120 . Separately, a transparent electrode  116  is formed on the protective film  132  in a transmission area of each of the pixel areas. One pixel is constituted with the reflection area and the transmission area positioned on the adjacent upper side of the reflection electrode in  FIG. 27A . The reflection electrode  117  and the transparent electrode  116  in the same pixel are electrically connected to each other. The transparent electrode  116  is electrically connected through a contact hole  124  to a source electrode  122  of a TFT  120  formed as an underlayer of a reflection electrode  117  of a pixel positioned on the adjacent upper side in  FIG. 27A . 
     A storage capacitor bus line  118  is formed on the glass substrate  110  in parallel to the gate bus line  112  as extending in the landscape direction in  FIG. 27A . The storage capacitor bus line  118  functions as one electrode of a storage capacitor. A storage capacitor electrode  119  is formed on the storage capacitor bus line  118  through the insulating film  130 . The storage capacitor electrode  119  is electrically connected to the source electrode  122  and functions as the other electrode of the storage capacitor. A light leakage preventing film  140  is also formed on the glass substrate  110  in parallel to the gate bus line  112  and the storage capacitor bus line  118  in the landscape direction in  FIG. 27A . The light leakage preventing film  140  is disposed to shielding the vicinity of the boundary between the reflection area and the transmission area from light, so as to prevent leakage of light caused by alignment failure of the liquid crystal in the vicinity of the boundary between the areas. 
     The wrinkled resin layer  134  in the TFT substrate  120  shown in  FIGS. 27A and 27B  is formed by the following procedures. A positive light-sensitive resin is coated on a whole surface of a glass substrate having TFTs and the like formed thereon to form a resin layer. The glass substrate is placed on an exposing stage in an exposing apparatus, and the resin layer is exposed through a photomask that shields areas to be reflection areas from light. By this, the resin layer is exposed on areas other than the reflection areas. Subsequently, the resin layer is developed to remove the resin layer in the exposed area by dissolving in a developer solution, whereby the resin layer in the non-exposed reflection areas remains as not dissolved in the developer solution. The surface of the remaining resin layer is irradiated with UV light to cure the upper layer portion of the resin layer. Subsequently, the resin layer is subjected to a heat treatment at a temperature equal to or higher than the heat curing point thereof, so as to form a wrinkled resin layer having wrinkled unevenness on the surface thereof. 
     In the step of exposing the resin layer, however, the light reflected by the surface of the exposing stage is also incident on the resin layer in the reflection areas. Accordingly, the resin layer in the reflection areas is exposed and cured to such an extent that it is not dissolved in the developer solution. In general, the surface of the exposing stage has grooves formed thereon. Therefore, the intensity of the light incident on the resin layer in the reflection areas varies depending on the presence and absence of the grooves on the surface of the exposing stage, and thus, the extent of curing of the resin layer varies depending on the positions of the grooves. Accordingly, uniform wrinkled unevenness cannot be formed on the surface of the resin layer in the subsequent step to fluctuate the shape of wrinkled unevenness corresponding to the positions of the grooves on the surface of the exposing stage. Consequently, a transreflective liquid crystal display device thus manufactured has such a problem that display ununiformity corresponding to the positions of the grooves on the surface of the exposing stage is viewed upon display in a reflection mode, so as to fail to obtain an intended reflectivity and good reflection uniformity. 
     SUMMARY OF THE INVENTION 
     An object of the invention is to provide a liquid crystal display substrate capable of providing good reflection display characteristics, a method of manufacturing the same, and a liquid crystal display device having the same. 
     The aforementioned object of the invention can be attained by a liquid crystal display substrate containing: a plurality of pixel areas each having at least a portion thereof a reflection area reflecting light incident from a front surface side of the substrate; a wrinkled resin layer formed with a positive light-sensitive resin in the reflection area, the wrinkled resin layer having at least a portion thereof a wrinkled surface; a reflection electrode formed with a light reflection material on the wrinkled resin layer, the reflection electrode having a wrinkled surface following the surface of the wrinkled resin layer; and a light shielding portion formed as an underlayer of the wrinkled resin layer, the light shielding portion shielding light incident from a back surface of the substrate. 
     According to the invention, such a liquid crystal display device can be realized that provides good reflection display characteristics. 
    
    
     
       BRIEF DESCRIPTION OF THE DRAWINGS 
         FIG. 1  is a schematic diagram showing a constitution of a liquid crystal display device according to a first embodiment of the invention; 
         FIG. 2  is a schematic diagram showing an equivalent circuit of a liquid crystal display substrate according to the first embodiment of the invention; 
         FIGS. 3A and 3B  are a plan view and a cross sectional view showing a constitution of a liquid crystal display substrate according to the first embodiment of the invention; 
         FIGS. 4A and 4B  are a plan view and a cross sectional view showing a constitution of a liquid crystal display substrate according to a modified example of the first embodiment of the invention; 
         FIGS. 5A and 5B  are a plan view and a cross sectional view showing a constitution of a liquid crystal display substrate according to a second embodiment of the invention; 
         FIGS. 6A and 6B  are a plan view and a cross sectional view showing a constitution of a liquid crystal display substrate according to a modified example of the second embodiment of the invention; 
         FIGS. 7A and 7B  are a plan view and a cross sectional view showing a constitution of a liquid crystal display substrate according to a third embodiment of the invention; 
         FIGS. 8A and 8B  are a plan view and a cross sectional view showing a constitution of a liquid crystal display substrate according to a fourth embodiment of the invention; 
         FIGS. 9A and 9B  are a plan view and a cross sectional view showing a constitution of a liquid crystal display substrate according to a modified example of the fourth embodiment of the invention; 
         FIG. 10  is a cross sectional view showing a constitution of a liquid crystal display substrate according to a fifth embodiment of the invention; 
         FIGS. 11A and 11B  are cross sectional views showing a method of manufacturing a liquid crystal display substrate according to the fifth embodiment of the invention; 
         FIGS. 12A and 12B  are cross sectional views showing a method of manufacturing a liquid crystal display substrate according to the fifth embodiment of the invention; 
         FIG. 13  is a cross sectional view showing a constitution of a liquid crystal display substrate according to a sixth embodiment of the invention; 
         FIGS. 14A and 14B  are cross sectional views showing a method of manufacturing a liquid crystal display substrate according to the sixth embodiment of the invention; 
         FIGS. 15A and 15B  are cross sectional views showing a method of manufacturing a liquid crystal display substrate according to the sixth embodiment of the invention; 
         FIG. 16  is a cross sectional view showing a constitution of a liquid crystal display substrate according to a seventh embodiment of the invention; 
         FIGS. 17A to 17C  are cross sectional views showing a method of manufacturing a liquid crystal display substrate according to the seventh embodiment of the invention; 
         FIG. 18  is a cross sectional view showing a constitution of a liquid crystal display substrate according to an eighth embodiment of the invention; 
         FIGS. 19A and 19B  are cross sectional views showing a method of manufacturing a liquid crystal display substrate according to the eighth embodiment of the invention; 
         FIGS. 20A and 20B  are cross sectional views showing a method of manufacturing a liquid crystal display substrate according to the eighth embodiment of the invention; 
         FIG. 21  is a cross sectional view showing a constitution of a liquid crystal display substrate according to a ninth embodiment of the invention; 
         FIGS. 22A and 22B  are cross sectional views showing a method of manufacturing a liquid crystal display substrate according to the ninth embodiment of the invention; 
         FIGS. 23A and 23B  are cross sectional views showing a method of manufacturing a liquid crystal display substrate according to the ninth embodiment of the invention; 
         FIG. 24  is a cross sectional view showing a constitution of a liquid crystal display substrate according to a tenth embodiment of the invention; 
         FIGS. 25A and 25B  are cross sectional views showing a method of manufacturing a liquid crystal display substrate according to the tenth embodiment of the invention; 
         FIGS. 26A and 26B  are cross sectional views showing a method of manufacturing a liquid crystal display substrate according to the tenth embodiment of the invention; and 
         FIGS. 27A and 27B  are a plan view and a cross sectional view showing a constitution of a TFT substrate of a conventional transreflective liquid crystal display device. 
     
    
    
     DESCRIPTION OF THE PREFERRED EMBODIMENTS 
     First Embodiment 
     A liquid crystal display substrate according to a first embodiment of the invention and a liquid crystal display device using the same will be described with reference to  FIGS. 1 to 4B .  FIG. 1  is a schematic diagram showing a constitution of a transreflective liquid crystal display device according to a first embodiment of the invention. As shown in  FIG. 1 , the transreflective liquid crystal display device has such a structure that a transparent electrode formed with a light transmission material, a reflection electrode formed with a light reflection material and a TFT substrate  2  having a TFT and the like formed in each of pixel areas are attached to an opposite substrate  4  having a common electrode, a CF layer and the like as facing each other, and a liquid crystal is sealed between them. 
     The TFT substrate  2  has a gate bus line driving circuit  80  having a driver IC mounted thereon for driving the plurality of gate bus lines and a drain bus line driving circuit  82  having a driver IC mounted thereon for driving the plurality of drain bus lines. The driving circuits  80  and  82  output a scanning signal and a data signal to the predetermined gate bus line or drain bus line based on the predetermined signal output from a control circuit  84 . 
     The opposite substrate  4  has a CF layer having one color selected from red (R), green (G) and blue (B) formed for each pixel areas. The facing surfaces of the substrates  2  and  4  have alignment films for aligning the liquid crystal molecules to a predetermined direction. The TFT substrate  2  has, on the surface opposite to that having an element formed, a polarizing plate  87  attached thereto. A backlight unit  88  is disposed on the side of the polarizing plate  87  opposite to the TFT substrate  2 . On the contrary, a polarizing plate  86  is attached to the surface of the opposite substrate  4  opposite to that having the CF layer formed. 
       FIG. 2  is a schematic diagram showing an equivalent circuit of the element formed on the TFT substrate  2 .  FIG. 3A  is a plan view showing the constitution of approximately one pixel area of the TFT substrate  2 , and  FIG. 3B  is a cross sectional view showing the constitution of the TFT substrate  2  on line A-A in  FIG. 3A . As shown in  FIGS. 2 ,  3 A and  3 B, a glass substrate  10  of the TFT substrate  2  has the plurality of gate bus lines  12  extending in parallel to each other in the landscape direction in  FIGS. 2 and 3A  (provided that only one of them is shown in  FIG. 3A ). 
     An insulating film (gate insulating film)  30  is formed on the gate bus lines  12  on the entire surface of the substrate. The plurality of drain bus lines  14  are formed extending in parallel to each other in the portrait direction in  FIGS. 2 and 3A  as intersecting the gate bus lines  12  with the insulating film  30  intervening therebetween (provided that only two of the drain bus lines  14  are shown in  FIG. 3A ). A channel protective film type TFTs  20 , for example, are formed in the vicinities of positions where the gate bus lines  12  and the drain bus lines  14  are intersected each other. 
     The TFT  20  has an active semiconductor layer  28  formed with an a-Si layer on the insulating film  30 . A channel protective film  23  is formed on the active semiconductor layer  28 . On the channel protective film  23 , a drain electrode  21  withdrawn from the adjacent drain bus line  14  and an n + a-Si layer  51  as an under ohmic contact layer thereof, and a source electrode  22  and a lower n + a-Si layer  51  as an underlayer thereof are formed to face each other through a predetermined gap. The drain electrode  21  and the source electrode  22  each has, for example, an accumulated layer structure having a titanium (Ti) layer  21   a , an aluminum (Al) layer  21   b  and a Ti layer ( 21   c ). In this constitution, the gate bus line  12  immediately beneath the channel protective film  23  functions as a gate electrode of the TFT  20 . 
     A protective film  32  is formed on the TFT  20  on the entire surface of the substrate. A wrinkled resin layer  34  having wrinkled unevenness on the surface thereof is formed on the protective film  32  in a reflection area of each of the pixel areas. The wrinkled resin layer  34  is formed by using a positive light-sensitive resin. A reflection electrode  17  is formed on the wrinkled resin layer  34 . The reflection electrode  17  is formed with an electroconductive film having light reflection capability and has, for example, a structure having a Ti layer  17   a  and an Al layer  17   b  accumulated in this order. The reflection electrode  17  has a wrinkled uneven surface following the surface of the wrinkled resin layer  34 . Light incident from the display screen side is diffusely reflected by the wrinkled surface of the reflection electrode  17  to obtain good reflection display characteristics. The reflection electrodes  17  formed on each of the pixels are disposed to cover the TFT  20  which drives the pixel adjacent lower side of the pixel in  FIG. 3A . 
     Separately, a transparent electrode  16  is formed on the protective film  32  in a transmission area of each of the pixel areas. The transparent electrode  16  is formed with an electroconductive film having light transmissibility, such as ITO (indium tin oxide). One pixel is constituted with the reflection area and the transmission area positioned on the adjacent upper side of the reflection electrode in  FIG. 3A . The reflection electrode  17  and the transparent electrode  16  in the same pixel are electrically connected to each other. 
     A storage capacitor bus line  18  is formed in parallel to the gate bus line  12  as extending in the landscape direction in  FIGS. 2 and 3A . The storage capacitor bus line  18  is formed with the same material as the gate bus line  12 . A storage capacitor electrode  19  is formed on the storage capacitor bus line  18  for each of the pixels through the insulating film  30 . The storage capacitor electrode  19  is formed with the same material as the drain bus line  14 . A light leakage preventing film  40  is also formed in parallel to the gate bus line  12  in the landscape direction in  FIG. 3A . The light leakage preventing film  40  is disposed to shield the vicinity of the boundary between the reflection area and the transmission area from light, so as to prevent leakage of light caused by alignment failure of the liquid crystal in the vicinity of the boundary between the areas. The light leakage preventing film  40  is formed with the same material as the gate bus line  12  and the storage capacitor bus line  18 , and is, for example, in an electrically floating state. 
     The TFT substrate  2  of this embodiment has, as an underlayer of the wrinkled resin layer  34  formed in the reflection area, light shielding portions  60   a  and  60   b  for shielding light incident from the back surface side of the glass substrate  10  (the lower side in  FIG. 3B ). The light shielding portions  60   a  and  60   b  are formed with the same material as the gate bus line  12 , the storage capacitor bus line  18  and the light leakage preventing film  40  simultaneously therewith. The light shielding portion  60   a  is disposed between the light leakage preventing film  40  and the gate bus line  12 . The light shielding portion  60   a  is electrically connected to the light leakage preventing film  40  and is electrically separated from the gate bus line  12 . The light shielding portion  60   b  is disposed between the gate bus line  12  and the storage capacitor bus line  18 . The light shielding portion  60   b  is electrically separated from the gate bus line  12  and is electrically connected to the storage capacitor bus line  18 . A large proportion of the reflection area (i.e., the area having the wrinkled resin layer  34  formed) is shielded from light incident from the back surface side of the glass substrate  10  by the gate bus line  12 , the storage capacitor bus line  18 , the light leakage preventing film  40  and the light shielding portions  60   a  and  60   b  (with portions of the drain electrode  21  and the source electrode  22 ). In the area having the wrinkled resin layer  34  formed, the proportion of the area shielded from light incident from the back surface side of the glass substrate  10  is preferably higher, for example, 30% or more. 
     The TFT  20 , the bus lines  12 ,  14  and  18 , the light leakage preventing film  40  and the light shielding portions  60   a  and  60   b  are formed by the photolithography process through a series of steps of semiconductor process, i.e., forming of a film, coating of a resist, exposure, development, etching, and removal of resist. 
     According to this embodiment, in the step of patterning a positive light-sensitive resin layer for forming the wrinkled resin layer  34  in the reflection area, reflected light on the exposing stage in the exposing apparatus is shielded by the light shielding portions  60   a  and  60   b , and thus the light is substantially not incident on the light-sensitive resin layer in the reflection area. Therefore, a heat treatment by applying energy to the surface thereof in the subsequent step provides such a wrinkled resin layer  34  that has uniform wrinkled unevenness formed thereon. Consequently, the reflection electrode  17  formed on the wrinkled resin layer  34  also has uniform wrinkled unevenness to obtain a desired inclined plane distribution with good controllability. According to this embodiment, therefore, excellent reflection uniformity and stable reflectivity can be obtained to realize a transreflective liquid crystal display device having good reflection display characteristics. Furthermore, since the light shielding portions  60   a  and  60   b  are formed in the same process step as the gate bus line  12 , the storage capacitor bus line  18  and the light leakage preventing film  40 , no process step is added to the manufacturing method of the TFT substrate  2 . 
     A modified example of the constitution of the liquid crystal display substrate of this embodiment will be described with reference to  FIGS. 4A and 4B .  FIG. 4A  is a plan view showing the constitution of the vicinity of the reflection area of one pixel area of the TFT substrate  2  according to this modified example, and  FIG. 4B  is a cross sectional view showing the constitution of the TFT substrate  2  on line B-B in  FIG. 4A . In this modified example, as shown in  FIGS. 4A and 4B , the light shielding portions  60   a  and  60   b  each is divided into plural portions, and is electrically separated from the light leakage preventing film  40  and the storage capacitor bus line  18 , as different from the constitution shown in  FIGS. 3A and 3B . The modified example is the same as the constitution shown in  FIGS. 3A and 3B  in such a standpoint that the light shielding portions  60   a  and  60   b  are formed with the same material as the gate bus line  12  and the like. 
     The three portions of the light shielding portion  60   a  formed between the gate bus line  12  and the light leakage preventing film  40  are electrically separated from both the gate bus line  12  and the light leakage preventing film  40  and thus is in a floating state. The two portions of the light shielding portion  60   b  formed between the gate bus line  12  and the storage capacitor bus line  18  are electrically separated from both the gate bus line  12  and the light leakage preventing film  40  and thus is in a floating state. In this modified example, even in the case where the light shielding portion  60   a  is shorted to one of the gate bus line  12  and the light leakage preventing film  40  due to contamination with electroconductive foreign matters or the like, the gate bus line  12  and the light leakage preventing film  40  are not shorted to each other. Similarly, even in the case where the light shielding portion  60   b  is shorted to one of the gate bus line  12  and the storage capacitor bus line  18 , the gate bus line  12  and the storage capacitor bus line  18  are not shorted to each other. According to this modified example, therefore, the manufacturing yield of the TFT substrate  2  can be further improved, in addition to the similar effect as in the constitution shown in  FIGS. 3A and 3B . 
     Second Embodiment 
     A liquid crystal display substrate according to a second embodiment of the invention will be described with reference to  FIGS. 5A to 6B .  FIG. 5A  is a plan view showing the constitution of the vicinity of the reflection area of one pixel area of the TFT substrate  2  according to this embodiment, and  FIG. 5B  is a cross sectional view showing the constitution of the TFT substrate  2  on line C-C in  FIG. 5A . As shown in  FIGS. 5A and 5B , the TFT substrate  2  according to this embodiment has, as an underlayer of the wrinkled resin layer  34  formed in the reflection area, light shielding portions  61   a  and  61   b  for shielding light incident from the back surface side of the glass substrate  10  (the lower side in  FIG. 5B ). The light shielding portions  61   a  and  61   b  are formed with the same material as the drain bus line  14 , the drain electrode  21 , the source electrode  22  and the storage capacitor electrode  19  simultaneously therewith. The light shielding portion  61   a  is electrically connected to the drain bus line  14  and the drain electrode  21  and is disposed between the light leakage preventing film  40  and the gate bus line  12 . The light shielding portion  61   b  is electrically connected to the source electrode  22  and the storage capacitor electrode  19  and is disposed between the gate bus line  12  and the storage capacitor bus line  18 . A large proportion of the reflection area (i.e., the area having the wrinkled resin layer  34  formed) is shielded from light incident from the back surface side of the glass substrate  10  by the gate bus line  12 , the storage capacitor bus line  18 , the light leakage preventing film  40  and the light shielding portions  61   a  and  61   b.    
     According to this embodiment, in the step of patterning a positive light-sensitive resin layer for forming the wrinkled resin layer  34  in the reflection area, reflected light on the exposing stage in the exposing apparatus is shielded by the light shielding portions  61   a  and  61   b , and thus the light is substantially not incident on the light-sensitive resin layer in the reflection area, as similar to the first embodiment. Therefore, a heat treatment by applying energy to the surface thereof in the subsequent step provides such a wrinkled resin layer  34  that has uniform wrinkled unevenness formed thereon. Consequently, the reflection electrode  17  formed on the wrinkled resin layer  34  also has uniform wrinkled unevenness to obtain a desired inclined plane distribution with good controllability. According to this embodiment, therefore, excellent reflection uniformity and stable reflectivity can be obtained to realize a transreflective liquid crystal display device having good reflection display characteristics. Furthermore, since the light shielding portions  61   a  and  61   b  are formed in the same process step as the drain bus line  14 , the drain electrode  21 , the source electrode  22  and the storage capacitor electrode  19 , no process step is added to the manufacturing method of the TFT substrate  2 . 
     A modified example of the constitution of the liquid crystal display substrate of this embodiment will be described with reference to  FIGS. 6A and 6B .  FIG. 6A  is a plan view showing the constitution of the vicinity of the reflection area of one pixel area of the TFT substrate  2  according to this modified example, and  FIG. 6B  is a cross sectional view showing the constitution of the TFT substrate  2  on line D-D in  FIG. 6A . In this modified example, as shown in  FIGS. 6A and 6B , the light shielding portions  61   a  and  61   b  each is divided into plural portions, and is electrically separated from the drain bus line  14 , the drain electrode  21 , the source electrode  22  and the storage capacitor electrode  19 , as different from the constitution shown in  FIGS. 5A and 5B . The modified example is the same as the constitution shown in  FIGS. 5A and 5B  in such a standpoint that the light shielding portions  61   a  and  61   b  are formed with the same material as the drain bus line  14  and the like. 
     The three portions of the light shielding portion  61   a  formed between the gate bus line  12  and the light leakage preventing film  40  are electrically separated from both the drain bus line  14  and the drain electrode  21  and thus is in a floating state. The two portions of the light shielding portion  61   b  formed between the gate bus line  12  and the storage capacitor bus line  18  are electrically separated from all the drain bus line  14 , the source electrode  22  and the storage capacitor electrode  19  and thus is in a floating state. In this modified example, even in the case where the light shielding portion  61   a  is shorted to one of the two drain bus lines  14  adjacent to each other in the landscape direction of the pixel due to contamination with electroconductive foreign matters or the like, the two drain bus lines  14  are not shorted to each other. Similarly, even in the case where the light shielding portion  61   b  is shorted to one of the drain bus line  14  and the source electrode  22  (or the storage capacitor electrode  19 ), the drain bus line  14  and the source electrode  22  are not shorted to each other. According to this modified example, therefore, the manufacturing yield of the TFT substrate  2  can be further improved, in addition to the similar effect as in the constitution shown in  FIGS. 5A and 5B . 
     Third Embodiment 
     A liquid crystal display substrate according to a third embodiment of the invention will be described with reference to  FIGS. 7A to 7B .  FIG. 7A  is a plan view showing the constitution of the vicinity of the reflection area of one pixel area of the TFT substrate  2  according to this embodiment, and  FIG. 7B  is a cross sectional view showing the constitution of the TFT substrate  2  on line E-E in  FIG. 7A . As shown in  FIGS. 7A and 7B , the TFT substrate  2  according to this embodiment has, as an underlayer of the wrinkled resin layer  34  formed in the reflection area, light shielding portions  60   a ,  60   b ,  61   a  and  61   b  for shielding light incident from the back surface side of the glass substrate  10  (the lower side in  FIG. 7B ). The light shielding portions  60   a  and  60   b  are formed with the same material as the gate bus line  12 , the storage capacitor bus line  18  and the light leakage preventing film  40  simultaneously therewith. The light shielding portion  60   a  is disposed between the gate bus line  12  and the light leakage preventing film  40  and is electrically separated from both the gate bus line  12  and the light leakage preventing film  40 . The light shielding portion  60   b  is disposed between the gate bus line  12  and the storage capacitor bus line  18  and is electrically separated from both the gate bus line  12  and the storage capacitor bus line  18 . 
     At the position corresponding to the gap between the light leakage preventing film  40  and the light shielding portion  60   a , the light shielding portion  61   a  is disposed through the insulating film  30  to overlap partly the light leakage preventing film  40  and the light shielding portion  60   a . Similarly, at the position corresponding to the gap between the gate bus line  12  and the light shielding portion  60   a , the light shielding portion  61   a  is disposed through the insulating film  30  to overlap partly the gate bus line  12  and the light shielding portion  60   a . Furthermore, at the position corresponding to the gap between the gate bus line  12  and the light shielding portion  60   b , the light shielding portion  61   b  is disposed through the insulating film  30  to overlap partly the gate bus line  12  and the light shielding portion  60   b . The light shielding portions  61   a  and  61   b  are formed with the same material as the drain bus line  14 , the drain electrode  21 , the source electrode  22  and the storage capacitor electrode  19  simultaneously therewith. As described herein, in this embodiment, the light shielding portions are formed with different materials depending on the areas where the light shielding portions are formed. The substantially whole reflection area is shielded from light incident from the back surface side of the glass substrate  10  by the gate bus line  12 , the storage capacitor bus line  18 , the light leakage preventing film  40 , the drain electrode  21 , the source electrode  22 , the storage capacitor electrode  19  and the light shielding portions  60   a ,  60   b ,  61   a  and  61   b.    
     According to this embodiment, in the step of patterning a positive light-sensitive resin layer for forming the wrinkled resin layer  34  in the reflection area, reflected light on the exposing stage is shielded by the light shielding portions  60   a ,  60   b ,  61   a  and  61   b , and thus the light is substantially not incident on the light-sensitive resin layer in the reflection area, as similar to the first and second embodiments. Therefore, a heat treatment by applying energy to the surface thereof in the subsequent step provides such a wrinkled resin layer  34  that has uniform wrinkled unevenness formed thereon. Consequently, the reflection electrode  17  formed on the wrinkled resin layer  34  also has uniform wrinkled unevenness to obtain a desired inclined plane distribution with good controllability. According to this embodiment, therefore, excellent reflection uniformity and stable reflectivity can be obtained to realize a transreflective liquid crystal display device having good reflection display characteristics. Furthermore, since the light shielding portions  60   a  and  60   b  are formed in the same process step as the gate bus line  12 , the storage capacitor bus line  18  and the light leakage preventing film  40 , and the light shielding portions  61   a  and  61   b  are formed in the same process steps as the drain bus line  14 , the drain electrode  21 , the source electrode  22  and the storage capacitor electrode  19 , no process step is added to the manufacturing method of the TFT substrate  2 . 
     Fourth Embodiment 
     A liquid crystal display substrate according to a fourth embodiment of the invention will be described with reference to  FIGS. 8A to 9B .  FIG. 8A  is a plan view showing the constitution of the vicinity of the reflection area of one pixel area of the TFT substrate  2  according to this embodiment, and  FIG. 8B  is a cross sectional view showing the constitution of the TFT substrate  2  on line F-F in  FIG. 8A . As shown in  FIGS. 8A and 8B , the TFT substrate  2  according to this embodiment has, as an underlayer of the wrinkled resin layer  34  formed in the reflection area, light shielding portions  62   a  and  62   b  for shielding light incident from the back surface side of the glass substrate  10  (the lower side in  FIG. 8B ). The TFT substrate  2  has a channel etching type TFT  25 , which is different from the channel protective film type TFT  20  in the first to third embodiments. 
     The TFT  25  has an active semiconductor layer  28  formed with an a-Si layer on an insulating film  30 . On the active semiconductor layer  28 , a drain electrode  21  withdrawn from the adjacent drain bus line  14  and an n + a-Si layer  51  as an underlayer thereof, and a source electrode  22  and a lower n + a-Si layer  51  as an underlayer thereof are formed to face each other through a predetermined gap. For example, the source electrode  22  has a stick-like planar shape. The drain electrode  21  is disposed to surround the source electrode  22  in a C-shape. The channel area surface of the active semiconductor layer  28  is partly etched for ensuring separation and insulation between the drain electrode  21  and the source electrode  22 . The active semiconductor layer  28  has a thickness, for example, of from 150 to 200 nm upon formation thereof, and the thickness of the active semiconductor layer  28  at the portion having a surface being etched is, for example, about 100 nm. The gate bus line  12  immediately beneath the active semiconductor layer  28  functions as a gate electrode of the TFT  25 . The gate bus line  12  in this embodiment has a larger width in the area functioning as the gate electrode than that of the other areas. 
     The light shielding portions  62   a  and  62   b  are formed with the same material as the active semiconductor layer  28  of the TFT  25  simultaneously therewith. The light shielding portions  62   a  and  62   b  have a thickness of about 100 nm, which is substantially the same as the thickness of the active semiconductor layer  28  of the TFT  25  in the area having a surface being etched, and has a function of shielding (absorbing) light. As described herein, this embodiment utilizes such a constitution that the active semiconductor layer  28  of the channel etching type TFT  25  is formed to have a larger thickness than the active semiconductor layer  28  of the channel protective film type TFT  20  (for example, about from 30 to 50 nm). The light shielding portion  62   a  is disposed between the gate bus line  12  and the light leakage preventing film  40  and is electrically separated from the active semiconductor layer  28 , the drain electrode  21 , the drain bus line  14 , the gate bus line  12  and the light leakage preventing film  40 . The light shielding portion  62   b  is disposed between the gate bus line  12  and the storage capacitor bus line  18  and is electrically separated from the active semiconductor layer  28 , the source electrode  22 , the storage capacitor electrode  19 , the gate bus line  12  and the storage capacitor bus line  18 . A large proportion of the reflection area is shielded from light incident from the back surface side of the glass substrate  10  by the gate bus line  12 , the storage capacitor bus line  18 , the light leakage preventing film  40  and the light shielding portions  62   a  and  62   b.    
     According to this embodiment, in the step of patterning a positive light-sensitive resin layer for forming the wrinkled resin layer  34  in the reflection area, reflected light on the exposing stage is shielded by the light shielding portions  62   a  and  62   b , and thus the light is substantially not incident on the light-sensitive resin layer in the reflection area, as similar to the first to third embodiments. Therefore, a heat treatment by applying energy to the surface thereof in the subsequent step provides such a wrinkled resin layer  34  that has uniform wrinkled unevenness formed thereon. Consequently, the reflection electrode  17  formed on the wrinkled resin layer  34  also has uniform wrinkled unevenness to obtain a desired inclined plane distribution with good controllability. According to this embodiment, therefore, excellent reflection uniformity and stable reflectivity can be obtained to realize a transreflective liquid crystal display device having good reflection display characteristics. Furthermore, since the light shielding portions  62   a  and  62   b  are formed in the same process step as the active semiconductor layer  28 , no process step is added to the manufacturing method of the TFT substrate  2 . 
     A modified example of the constitution of the liquid crystal display substrate of this embodiment will be described with reference to  FIGS. 9A and 9B .  FIG. 9A  is a plan view showing the constitution of the vicinity of the reflection area of one pixel area of the TFT substrate  2  according to this modified example, and  FIG. 9B  is a cross sectional view showing the constitution of the TFT substrate  2  on line G-G in  FIG. 9A . In this modified example, as shown in  FIGS. 9A and 9B , the light shielding portion  62   a  partly overlaps the light leakage preventing film  40 . At the gap between the two adjacent light shielding portions  62   a  (i.e., on the surrounding of the light shielding portion  62   a ), a light shielding portion  60   a  extending from the light leakage preventing film  40  is disposed, which is formed with the same material as the gate bus line  12  simultaneously therewith. At the gap between the light shielding portion  62   a  and the drain electrode  21 , a light shielding portion  60   a ′ is disposed, which is formed with the same material as the light shielding portion  60   a  simultaneously therewith. Separately, a light shielding portion  60   b , which is formed with the same material as the gate bus line  12  simultaneously therewith, is disposed on the surrounding of the light shielding portion  62   b . The light shielding portion  60   b  is electrically separated from both the gate bus line  12  and the storage capacitor bus line  18 . As described herein, in this modified embodiment, the light shielding portions are formed with different materials depending on the areas where the light shielding portions are formed. The substantially whole reflection area is shielded from light incident from the back surface side of the glass substrate  10  by the gate bus line  12 , the storage capacitor bus line  18 , the light leakage preventing film  40 , the drain electrode  21 , the source electrode  22 , the storage capacitor electrode  19  and the light shielding portions  60   a ,  60   a ′,  60   b ,  62   a  and  62   b . According to this modified example, therefore, further uniform wrinkled unevenness can be formed on the reflection electrode  17  in comparison to the constitution shown in  FIGS. 8A and 8B , so as to provide better reflection display characteristics. 
     Fifth Embodiment 
     A liquid crystal display substrate according to a fifth embodiment of the invention and a manufacturing method thereof will be described with reference to  FIGS. 10 to 12B .  FIG. 10  is a cross sectional view showing a constitution of a TFT substrate  2  according to this embodiment. In  FIG. 10 , the area having a TFT  20  of a pixel formed therein is shown on the left side, a transmission area of the pixel is shown at the center, and a reflection area of the adjacent pixel is shown on the right side. As shown in  FIG. 10 , the TFT substrate  2  of this embodiment has an insulating film  31  as an underlayer of a gate electrode (gate bus line)  12  of the channel protective film type TFT  20 . A transparent electrode  16  is formed immediately above the glass substrate  10  in the transmission area. The surface of the transparent electrode  16  is exposed through an opening  27  where the protective film  32  and the insulating films  30  and  31  are removed. The transparent electrode  16  is electrically connected to the source electrode  22  of the TFT  20  through the reflection electrode  17 . A light shielding portion  63  is formed as an underlayer of the insulating film  31  in the reflection area. The light shielding portion  63  has such a constitution that an ITO layer  52  formed with the same material as the transparent electrode  16  and a high melting point metal layer  53  having a light shielding capability are accumulated in this order and patterned into the same shape. 
     A manufacturing method of the liquid crystal display substrate according to this embodiment will be described.  FIGS. 11A to 12B  are cross sectional views showing the manufacturing method of the TFT substrate  2  according to this embodiment. As shown in  FIG. 11A , an ITO layer  52  having a thickness, for example, of 70 nm and a high melting point metal layer  53  having a thickness, for example, of 100 nm are formed by sputtering directly on a glass substrate  10  as a transparent insulating substrate or after forming a protective film, such as SiO x , thereon depending on necessity. By this, an electroconductive film having a thickness of about 170 nm having the ITO layer  52  and the high melting point metal layer  53  accumulated is formed on the whole surface of the substrate. Examples of the material for forming the high melting point metal layer  53  include Ti, chromium (Cr), molybdenum (Mo), tantalum (Ta), tungsten (W) and alloys thereof. A resist is then coated on the whole surface of the electroconductive film and patterned by using a first photomask (or a reticle) to form a resist pattern having a predetermined shape. Subsequently, wet etching by using, for example, a mixed reagent of acetic acid, nitric acid and phosphoric acid, and wet etching using, for example, a reagent, such as oxalic acid, are effected by using the resist pattern as an etching mask. Consequently, a light shielding portion  63  is formed on at least a portion of an area to be a reflection area, and an electroconductive film (electroconductive layer)  54  having a predetermined shape is formed on an area to be a transmission area. 
     As shown in  FIG. 11B , by the plasma CVD process a silicon nitride film (SiN film) having a thickness, for example, of 200 nm is formed on the light shielding portion  63  and the electroconductive film  54  on the whole surface of the substrate to form an insulating film  31 . 
     As shown in  FIG. 12A , an Al layer (or an Al alloy layer)  55  having a thickness, for example, of 130 nm and a high melting point metal layer (such as a Ti layer or a Ti alloy layer)  56  having a thickness, for example, of 70 nm are formed in this order by sputtering on the insulating layer  31  on the whole surface of the substrate. Consequently, an electroconductive film having a thickness of 200 nm containing the Al layer  55  and the high melting point metal layer  56  accumulated is formed. Examples of the Al alloy include those materials that are obtained by adding one or plurality of neodymium (Nd), silicon (Si), copper (Cu), Ti, W, Ta and scandium (Sc) to Al. Examples of the high melting point metal include Cr, Mo, Ta, W and alloys thereof. A resist is then coated on the whole surface of the electroconductive film and patterned by using a second photomask to form a resist pattern having a predetermined shape. Subsequently, dry etching using, for example, a chlorine series gas is effected by using the resist pattern as an etching mask. Consequently, a gate bus line  12 , a storage capacitor bus line  18  (not shown in the figure) and a gate bus line terminal (not shown in the figure) are formed. 
     An SiN film having a thickness, for example, of 400 nm is formed by the plasma CVD process on the gate bus line  12 , the storage capacitor bus line  18  and the gate bus line terminal on the whole surface of the substrate, so as to form an insulating film (gate insulating film)  30 . An a-Si layer having a thickness, for example, of 30 nm is then formed by the plasma CVD process on the whole surface of the insulating layer  30 . Subsequently, an SiN film having a thickness, for example, of 150 nm is formed by the plasma CVD process on the whole surface of the a-Si layer. A resist is coated by spin coating on the whole surface of the SiN film to form a resist layer. The glass substrate  10  is then exposed from the back surface side thereof by using the gate bus line  12  as a mask. Subsequently, the glass substrate  10  is exposed from the front surface side thereof by using a third photomask. The resist layer is then developed, and the resist layer in the exposed area is removed by dissolution. Consequently, a resist pattern is formed in a self aligning manner only on the area for forming the channel protective film on the gate bus line  12 . Dry etching using a fluorine series gas is then effected by using the resist pattern as an etching mask to form a channel protective film  23 . 
     Immediately after cleaning the surface of the a-Si layer (removal of a spontaneous oxidized film) by using diluted hydrofluoric acid, an n + a-Si layer having a thickness, for example, of 30 nm is formed on the whole surface of the substrate by the plasma process. A high melting point metal layer (such as a Ti layer or a Ti alloy layer)  57  having a thickness, for example, of 40 nm, an Al layer (or an Al alloy layer)  58  having a thickness, for example, of 75 nm and a high melting point metal layer (such as a Ti layer or a Ti alloy layer)  59  having a thickness, for example, of 80 nm are then formed by sputtering in this order to form an electroconductive film. Examples of the high melting point metal include Cr, Mo, Ta, W and alloys thereof. It is necessary that the high melting point metal layer  59  is not removed but remains upon removing by etching the high melting point metal layer  53  in the transmission area in the subsequent process step, and therefore, the materials for forming the high melting point metal layers  53  and  59  are selected under consideration of etching selectivity thereof (see  FIG. 12B ). 
     A resist is then coated on the whole surface of the electroconductive film and patterned by using a fourth photomask to form a resist pattern having a predetermined shape. The electroconductive film, the n + a-Si layer and the a-Si layer are subjected to dry etching using a chlorine series gas by using the resist pattern as an etching mask. Consequently, a drain electrode  21  and a source electrode  22  of the TFT  20 , an active semiconductor layer  28 , a storage capacitor electrode  19  (not shown in the figure), a drain bus line  14  (not shown in the figure) and a drain bus line terminal (not shown in the figure) are formed. The channel protective film  23  functions as an etching stopper upon etching, and the a-Si layer as an underlayer thereof is not etched but remains. According to the aforementioned operations, a channel protective film type TFT  20  is formed. 
     As shown in  FIG. 12B , an SiN film having a thickness, for example, of 300 nm is formed by the plasma CVD process on the whole surface of the substrate to form a protective film  32 . A resist is then coated on the whole surface of the protective film  32  and patterned by using a fifth photomask to form a resist pattern having a predetermined shape. The protective film  32  (and the insulating films  30  and  31 ) is subjected to dry etching using a mixed gas of a fluorine series gas and an O 2  gas by using the resist pattern as an etching mask. Consequently, a contact hole  26  on the source electrode  22 , a contact hole (not shown in the figure) on the storage capacitor electrode  19  and a contact hole (not shown in the figure) on the gate bus line terminal and the drain bus line terminal are formed. Simultaneously, the protective film  32  and the insulating films  30  and  31  on the electroconductive film  54  in the transmission area are removed to form an opening  27 . Subsequently, wet etching using a mixed reagent of acetic acid, nitric acid and phosphoric acid is effected. Consequently, the high melting point metal layer  53  as an upper layer of the electroconductive film  54  exposed through the opening  27  is removed, and the ITO layer  52  as a lower layer thereof remains, so as to form a transparent electrode  16 . 
     A positive light-sensitive novolak resin, for example, is coated on the whole surface of the substrate by using a spin coater or a slit coater to form a light-sensitive resin layer having a thickness, for example, of about from 0.5 to 4 μm. Subsequently, the substrate is subjected to a heat treatment at a temperature of 160° C. or lower. The light-sensitive resin layer is then exposed by using a sixth photomask and is developed by using an alkali developer solution, such as TMAH (tetramethylammonium hydroxide), so as to form an overcoat (OC) layer (resin layer) having a predetermined shape. The OC layer is formed on at least a portion of the area to be the reflection area. In the exposing step for patterning, since the light shielding portion  63  is formed as an underlayer (i.e., on the side of the glass substrate  10 ) of the light-sensitive resin layer, light reflected on the exposing stage of the exposing apparatus is substantially not incident on the light-sensitive resin layer in the reflection area. 
     The OC layer is then annealed at a temperature of from 100 to 180° C. for from 0.2 to 60 minutes by using a clean oven or a hot plate. The surface of the OC layer is then irradiated with UV light having a wavelength of from 200 to 470 nm at an energy density of from 10 to 550 mJ/cm 2  for from 5 to 300 seconds. The OC layer is then annealed by using a clean oven or the like at a temperature equal to or higher than the heat curing point thereof (from 180 to 230° C.) for about 1 hour. Consequently, a wrinkled resin layer  34  having wrinkled unevenness on the surface thereof is formed in the reflection area (see  FIG. 10 ). As described in the foregoing, in this embodiment, light reflected by the exposing stage of the exposing apparatus is substantially not incident on the light-sensitive resin in the reflection area, and therefore, a wrinkled resin layer  34  having uniform wrinkled unevenness can be obtained through the subsequent UV light irradiation and heat treatment. 
     In the constitution shown in  FIGS. 3A and 3B , for example, there is such a possibility that reflected light from the exposing stage is incident through the gap between the light shielding portions  60   a  and  60   b  and the gate bus line  12 . Therefore, there is such a possibility that the wrinkled unevenness is deformed in a partial area of the wrinkled resin layer  34  depending on the positions of the grooves on the surface of the exposing stage and that display unevenness depending on the area proportion of the gap to the reflection area is formed. In order to prevent the phenomenon, the glass substrate  10  may be subjected to exposure from the back surface side (i.e., the lower side in the figure) under predetermined exposing conditions after patterning the OC layer and before subjecting to the heat treatment at a temperature equal to or higher than the heat curing point. Consequently, the OC layer in the area corresponding to the gap between the light shielding portions  60   a  and  60   b  and the gate bus line  12  is substantially uniformly cured over all the pixels, whereby display unevenness is not viewed although no wrinkled unevenness is formed in that area through the subsequent heat treatment. 
     A Ti layer (or a Ti alloy layer)  17   a  having a thickness, for example, of 100 nm and an Al layer (or an Al alloy layer)  17   b  having a thickness, for example, of 100 nm are formed by sputtering on the whole surface of the wrinkled resin layer  34 . A high melting point metal layer formed with Cr, Mo, Ta, W or alloys thereof may be formed instead of the Ti layer. A resist is then coated on the whole surface of the Al layer  17   b  and patterned by using a seventh photomask to form a resist pattern having a predetermined shape. Subsequently, dry etching using a chlorine series gas is effected by using the resist pattern as an etching mask. Consequently, a reflection electrode  17  is formed in the reflection area including the wrinkled resin layer  34 . The surface of the reflection electrode  17  has a wrinkled uneven surface according to the surface of the wrinkled resin layer  34 . The reflection electrode  17  is electrically connected to the source electrode  22  through the contact hole  26 , and is electrically connected to the storage capacitor electrode  19  through a contact hole not shown in the figure. The reflection electrode  17  is also electrically connected to the transparent electrode  16  through a portion of the opening  27 . Thereafter, the substrate is subjected to a heat treatment at a temperature of from 150 to 230° C., preferably 200° C. According to the aforementioned process steps, the TFT substrate  2  shown in  FIG. 10  is completed. 
     According to this embodiment, in the step of patterning the positive light-sensitive resin layer for forming the wrinkled resin layer  34  in the reflection area, light reflected from the exposing stage is shielded by the light shielding portion  63  and the like, and thus the light is substantially not incident on the light-sensitive resin layer in the reflection area, as similar to the first to fourth embodiments. Therefore, a heat treatment by applying energy to the surface thereof in the subsequent step provides such a wrinkled resin layer  34  that has substantially uniform wrinkled unevenness formed thereon. Consequently, the reflection electrode  17  formed on the wrinkled resin layer  34  also has substantially uniform wrinkled unevenness to obtain a desired inclined plane distribution with good controllability. According to this embodiment, therefore, excellent reflection uniformity and stable reflectivity can be obtained to realize a transreflective liquid crystal display device having good reflection display characteristics. 
     Furthermore, since the light shielding portion  63  is patterned by using the same photomask (the first photomask) as the transparent electrode  16 , and the high melting point metal layer  53  on the transparent electrode  16  is removed by using the predetermined etchant after exposing through the opening  27  formed simultaneously with the contact hole  26 . In this embodiment, therefore, the light shielding portion  63  is formed by using no additional photomask, and thus no process step is added to the manufacturing method of the TFT substrate  2 . 
     Sixth Embodiment 
     A liquid crystal display substrate according to a sixth embodiment of the invention and a manufacturing method thereof will be described with reference to  FIGS. 13 to 15B . FIG.  13  is a cross sectional view showing a constitution of a TFT substrate  2  according to this embodiment. In  FIG. 13 , the area having a TFT  20  of a pixel formed therein is shown on the left side, a transmission area of the pixel is shown at the center, and a reflection area of the adjacent pixel is shown on the right side, as similar to  FIGS. 10 to 12B . As shown in  FIG. 13 , the TFT substrate  2  of this embodiment has the same constitution as the fifth embodiment except that it has a channel etching type TFT  25 . That is, the TFT substrate  2  has a light shielding portion  63  formed by accumulating an ITO layer  52  formed with the same material as a transparent electrode  16  and a high melting point metal layer  53  having light shielding capability in this order, which are then patterned in the same shape. 
     A manufacturing method of the liquid crystal display substrate according to this embodiment will be described.  FIGS. 14A to 15B  are cross sectional views showing the manufacturing method of the TFT substrate  2  according to this embodiment. As shown in  FIG. 14A , an ITO layer  52  having a thickness, for example, of 70 nm and a high melting point metal layer  53  having a thickness, for example, of 100 nm are formed by sputtering directly on a glass substrate  10  as a transparent insulating substrate or after forming a protective film, such as SiO x , thereon depending on necessity. Consequently, an electroconductive film having a thickness of about 170 nm having the ITO layer  52  and the high melting point metal layer  53  accumulated is formed on the whole surface of the substrate. A resist is then coated on the whole surface of the electroconductive film and patterned by using a first photomask to form a resist pattern having a predetermined shape. Subsequently, wet etching by using, for example, a mixed reagent of acetic acid, nitric acid and phosphoric acid, and wet etching using, for example, a reagent, such as oxalic acid, are effected by using the resist pattern as an etching mask. Consequently, a light shielding portion  63  is formed on at least a portion of an area to be a reflection area, and an electroconductive film  54  is formed on an area to be a transmission area. 
     As shown in  FIG. 14B , by the plasma process, an SiN film having a thickness, for example, of 200 nm is formed on the light shielding portion  63  and the electroconductive film  54  on the whole surface of the substrate to form an insulating film  31 . 
     As shown in  FIG. 15A , an Al layer (or an Al alloy layer)  55  having a thickness, for example, of 130 nm and a high melting point metal layer (such as a Ti layer or a Ti alloy layer)  56  having a thickness, for example, of 70 nm are formed in this order by sputtering on the insulating layer  31  on the whole surface of the substrate. Consequently, an electroconductive film having a thickness of 200 nm containing the Al layer  55  and the high melting point metal layer  56  accumulated is formed. A resist is then coated on the whole surface of the electroconductive film and patterned by using a second photomask to form a resist pattern having a predetermined shape. Subsequently, dry etching using, for example, a chlorine series gas is effected by using the resist pattern as an etching mask. Consequently, a gate bus line  12 , a storage capacitor bus line  18  (not shown in the figure) and a gate bus line terminal (not shown in the figure) are formed. 
     An SiN film having a thickness, for example, of 400 nm is formed by the plasma CVD process on the gate bus line  12 , the storage capacitor bus line  18  and the gate bus line terminal on the whole surface of the substrate, so as to form an insulating film (gate insulating film)  30 . An a-Si layer having a thickness, for example, of 150 nm is then formed by the plasma CVD process on the whole surface of the insulating layer  30 . Subsequently, an n + a-Si layer having a thickness, for example, of 30 nm is formed by the plasma CVD process on the whole surface of the a-Si layer. 
     A resist is coated by spin coating on the whole surface of the n + a-Si layer to form a resist layer. The glass substrate  10  is then exposed from the front surface side thereof by using a third photomask. The resist layer is then developed, and the resist layer in the exposed area is removed by dissolution. Consequently, a resist pattern is formed on the area for forming a TFT  25 . Dry etching using a fluorine series gas is then effected by using the resist pattern as an etching mask. Consequently, an active semiconductor layer  28  and the n + a-Si layer  51  as an upper layer thereof are formed in an island shape. 
     A high melting point metal layer (such as a Ti layer or a Ti alloy layer)  57  having a thickness, for example, of 40 nm, an Al layer (or an Al alloy layer)  58  having a thickness, for example, of 75 nm and a high melting point metal layer (such as a Ti layer or a Ti alloy layer)  59  having a thickness, for example, of 80 nm are formed by sputtering in this order to form an electroconductive film. Examples of the high melting point metal include Cr, Mo, Ta, W and alloys thereof. It is necessary that the high melting point metal layer  59  is not removed but remains upon removing by etching the high melting point metal layer  53  in the transmission area in the subsequent process step, and therefore, the materials for forming the high melting point metal layers  53  and  59  are selected under consideration of etching selectivity thereof (see  FIG. 15B ). 
     A resist is then coated on the whole surface of the electroconductive film and patterned by using a fourth photomask to form a resist pattern having a predetermined shape. The electroconductive film and the n + a-Si layer  51  are subjected to dry etching using a chlorine series gas by using the resist pattern as an etching mask. In order to separate certainly the drain electrode  21  and the n + a-Si layer  51  as an under layer thereof from the source electrode  22  and the n + a-Si layer  51  as an under layer thereof, the etching is effected up to the surface of the active semiconductor layer  28  (channel etching). Consequently, the drain electrode  21  and the source electrode  22  of the TFT  25 , a storage capacitor electrode  19  (not shown in the figure), a drain bus line  14  (not shown in the figure) and a drain bus line terminal (not shown in the figure) are formed. According to the aforementioned operations, a channel etching type TFT  25  is formed. 
     As shown in  FIG. 15B , an SiN film having a thickness, for example, of 300 nm is formed by the plasma CVD process on the whole surface of the substrate to form a protective film  32 . A resist is then coated on the whole surface of the protective film  32  and patterned by using a fifth photomask to form a resist pattern having a predetermined shape. The protective film  32  (and the insulating films  30  and  31 ) is subjected to dry etching using a mixed gas of a fluorine series gas and an O 2  gas by using the resist pattern as an etching mask. Consequently, a contact hole  26  on the source electrode  22 , a contact hole (not shown in the figure) on the storage capacitor electrode  19  and a contact hole (not shown in the figure) on the gate bus line terminal and the drain bus line terminal are formed. Simultaneously, the protective film  32  and the insulating films  30  and  31  on the electroconductive film  54  in the transmission area are removed to form an opening  27 . Subsequently, wet etching using a mixed reagent of acetic acid, nitric acid and phosphoric acid is effected. Consequently, the high melting point metal layer  53  as an upper layer of the electroconductive film  54  exposed through the opening  27  is removed, and the ITO layer  52  as a lower layer thereof remains, so as to form a transparent electrode  16 . 
     A positive light-sensitive novolak resin, for example, is coated on the whole surface of the substrate by using a spin coater or a slit coater to form a light-sensitive resin layer having a thickness, for example, of about from 0.5 to 4 μm. Subsequently, the substrate is subjected to a heat treatment at a temperature of 160° C. or lower. The light-sensitive resin layer is then exposed by using a sixth photomask and is developed by using an alkali developer solution, such as TMAH, so as to form an OC layer having a predetermined shape. The OC layer is formed on at least a portion of the area to be the reflection area. In the exposing step for patterning, since the light shielding portion  63  is formed as an underlayer (i.e., on the side of the glass substrate  10 ) of the light-sensitive resin layer, light reflected on the exposing stage of the exposing apparatus is substantially not incident on the light-sensitive resin layer in the reflection area. 
     The OC layer is then annealed at a temperature of from 100 to 180° C. for from 0.2 to 60 minutes by using a clean oven or a hot plate. The surface of the OC layer is then irradiated with UV light having a wavelength of from 200 to 470 nm at an energy density of from 10 to 550 mJ/cm 2  for from 5 to 300 seconds. Subsequently, depending on necessity, the glass substrate  10  is exposed from the back surface side thereof. The OC layer is then annealed by using a clean oven or the like at a temperature of from 180 to 230° C. for about 1 hour. Consequently, a wrinkled resin layer  34  having wrinkled unevenness on the surface thereof is formed in the reflection area (see  FIG. 13 ). As described in the foregoing, in this embodiment, light reflected by the exposing stage of the exposing apparatus is substantially not incident on the light-sensitive resin layer in the reflection area, and therefore, a wrinkled resin layer  34  having uniform wrinkled unevenness can be obtained through the subsequent UV light irradiation and heat treatment. 
     A Ti layer (or a Ti alloy layer)  17   a  having a thickness, for example, of 100 nm and an Al layer (or an Al alloy layer)  17   b  having a thickness, for example, of 100 nm are formed by sputtering on the whole surface of the wrinkled resin layer  34 . A resist is then coated on the whole surface of the Al layer  17   b  and patterned by using a seventh photomask to form a resist pattern having a predetermined shape. Subsequently, dry etching using a chlorine series gas is effected by using the resist pattern as an etching mask. Consequently, a reflection electrode  17  is formed in the reflection area including the wrinkled resin layer  34 . The surface of the reflection electrode  17  has a wrinkled uneven surface according to the surface of the wrinkled resin layer  34 . The reflection electrode  17  is electrically connected to the source electrode  22  through the contact hole  26 , and is electrically connected to the storage capacitor electrode  19  through a contact hole not shown in the figure. The reflection electrode  17  is also electrically connected to the transparent electrode  16  through a portion of the opening  27 . Thereafter, the substrate is subjected to a heat treatment at a temperature of from 150 to 230° C., preferably 200° C. According to the aforementioned process steps, the TFT substrate  2  shown in  FIG. 13  is completed. 
     According to this embodiment, in the step of patterning the positive light-sensitive resin layer for forming the wrinkled resin layer  34  in the reflection area, light reflected from the exposing stage is shielded by the light shielding portion  63  and the like, and thus the light is substantially not incident on the light-sensitive resin layer in the reflection area, as similar to the first to fifth embodiments. Therefore, a heat treatment by applying energy to the surface thereof in the subsequent step provides such a wrinkled resin layer  34  that has uniform wrinkled unevenness formed thereon. Consequently, the reflection electrode  17  formed on the wrinkled resin layer  34  also has substantially uniform wrinkled unevenness to obtain a desired inclined plane distribution with good controllability. According to this embodiment, therefore, excellent reflection uniformity and stable reflectivity can be obtained to realize a transreflective liquid crystal display device having good reflection display characteristics. 
     Furthermore, since the light shielding portion  63  is patterned by using the same photomask (the first photomask) as the transparent electrode  16 , and the high melting point metal layer  53  on the transparent electrode  16  is removed by using the predetermined etchant after exposing through the opening  27  formed simultaneously with the contact hole  26 . In this embodiment, therefore, the light shielding portion  63  is formed by using no additional photomask, and thus no process step is added to the manufacturing method of the TFT substrate  2 . 
     Seventh Embodiment 
     A liquid crystal display substrate according to a seventh embodiment of the invention and a manufacturing method thereof will be described with reference to  FIGS. 16 to 17C .  FIG. 16  is a cross sectional view showing a constitution of a TFT substrate  2  according to this embodiment. In  FIG. 16 , the area having a TFT  20  of a pixel formed therein is shown on the left side, a transmission area of the pixel is shown at the center, and a reflection area of the adjacent pixel is shown on the right side, as similar to  FIGS. 10 to 15B . As shown in  FIG. 16 , the TFT substrate  2  of this embodiment has, in the transmission area, a transparent electrode  16  formed directly on the glass substrate  10 . The surface of the transparent electrode  16  is exposed through an opening  27  where a protective film  32  and an insulating film  30  are removed. The transparent electrode  16  is electrically connected to the source electrode  22  of the TFT  20  through the reflection electrode  17 . A gate bus line (gate electrode)  12  has such a constitution that an ITO layer  52  formed with the same material as the transparent electrode  16 , a high melting point metal layer  70 , an Al layer  71  and a high melting point metal layer  72  are accumulated in this order. A light shielding portion  64  is formed as an underlayer of the insulating film  30  in the reflection area. The light shielding portion  64  has such a constitution that an ITO layer  52  formed with the same material as the transparent electrode  16 , a high melting point metal layer  70 , an Al layer  71  and a high melting point metal layer  72  are accumulated in this order, as similar to the gate bus line  12 . The layers constituting the light shielding portion  64  are patterned into the same shape. 
     A manufacturing method of the liquid crystal display substrate according to this embodiment will be described.  FIGS. 17A to 17C  are cross sectional views showing the manufacturing method of the TFT substrate  2  according to this embodiment. As shown in  FIG. 17A , an ITO layer  52 , a high melting point metal layer  70 , an Al layer  71  and a high melting point metal layer  72  are formed in this order to form an electroconductive film directly on a glass substrate  10  or after forming a protective film, such as SiO x , thereon depending on necessity. A resist is then coated on the whole surface of the electroconductive film and patterned by using a first photomask to form a resist pattern having a predetermined shape. Subsequently, wet etching by using, for example, a mixed reagent of acetic acid, nitric acid and phosphoric acid, and wet etching using, for example, a reagent, such as oxalic acid, are effected by using the resist pattern as an etching mask. Consequently, agate bus line  12 , a storage capacitor bus line  18  (not shown in the figure) and a gate bus line terminal (not shown in the figure) are formed, a light shielding portion  64  is formed on at least a portion of an area to be a reflection area, and an electroconductive film  54  is formed on an area to be a transmission area. 
     As shown in  FIG. 17B , an SiN film is formed by the plasma CVD process on the gate bus line  12 , the light shielding portion  64  and the electroconductive film  54  on the whole surface of the substrate to form an insulating film  30 . An a-Si layer is then formed by the plasma CVD process on the while surface of the insulating layer  30 . Subsequently, an SiN film is formed by the plasma CVD process on the whole surface of the a-Si layer. A resist is then coated by spin coating or the like on the whole surface of the SiN film to form a resist layer. The glass substrate  10  is then exposed from the back surface side thereof by using the gate bus line  12  as a mask. Subsequently, the glass substrate  10  is exposed from the front surface side thereof by using a second photomask. The resist layer is then developed, and the resist layer in the exposed area is removed by dissolution. Consequently, a resist pattern is formed in a self aligning manner only on the area for forming the channel protective film on the gate bus line  12 . Dry etching using a fluorine series gas is then effected by using the resist pattern as an etching mask to form a channel protective film  23 . 
     Immediately after cleaning the surface of the a-Si layer by using diluted hydrofluoric acid, an n + a-Si layer is formed by the plasma CVD process on the whole surface of the substrate. A high melting point metal layer (such as a Ti layer or a Ti alloy layer)  57 , an Al layer (or an Al alloy layer)  58  and a high melting point metal layer (such as a Ti layer or a Ti alloy layer)  59  are then formed by sputtering in this order to form an electroconductive film. 
     A resist is then coated on the whole surface of the electroconductive film and patterned by using a third photomask to form a resist pattern having a predetermined shape. The electroconductive film, the n + a-Si layer and the a-Si layer are subjected to dry etching using a chlorine series gas by using the resist pattern as an etching mask. Consequently, a drain electrode  21  and a source electrode  22  of the TFT  20 , an active semiconductor layer  28 , a storage capacitor electrode  19  (not shown in the figure), a drain bus line  14  (not shown in the figure) and a drain bus line terminal (not shown in the figure) are formed. The channel protective film  23  functions as an etching stopper upon etching, and the a-Si layer as an underlayer thereof is not etched but remains. According to the aforementioned operations, a channel protective film type TFT  20  is formed. 
     As shown in  FIG. 17C , an SiN film is formed by the plasma CVD process on the whole surface of the substrate to form a protective film  32 . A resist is then coated on the whole surface of the protective film  32  and patterned by using a fourth photomask to form a resist pattern having a predetermined shape. The protective film  32  (and the insulating film  30 ) is subjected to dry etching using a mixed gas of a fluorine series gas and an O 2  gas by using the resist pattern as an etching mask. Consequently, a contact hole  26  on the source electrode  22 , a contact hole (not shown in the figure) on the storage capacitor electrode  19  and a contact hole (not shown in the figure) on the gate bus line terminal and the drain bus line terminal are formed. Simultaneously, the protective film  32  and the insulating film  30  on the electroconductive film  54  in the transmission area are removed to form an opening  27 . 
     A positive light-sensitive novolak resin, for example, is coated on the whole surface of the substrate by using a spin coater or a slit coater to form a light-sensitive resin layer having a thickness, for example, of about from 0.5 to 4 μm. Subsequently, the substrate is subjected to a heat treatment at a temperature of 160° C. or lower. The light-sensitive resin layer is then exposed by using a fifth photomask and is developed by using an alkali developer solution, such as TMAH, so as to form an OC layer having a predetermined shape. The OC layer is formed on at least a portion of the area to be the reflection area. In the exposing step for patterning, since the light shielding portion  64  is formed as an underlayer (i.e., on the side of the glass substrate  10 ) of the light-sensitive resin layer, light reflected on the exposing stage of the exposing apparatus is substantially not incident on the light-sensitive resin layer in the reflection area. 
     The OC layer is then annealed at a temperature of from 100 to 180° C. for from 0.2 to 60 minutes by using a clean oven or a hot plate. The surface of the OC layer is then irradiated with UV light having a wavelength of from 200 to 470 nm at an energy density of from 10 to 550 mJ/cm 2  for from 5 to 300 seconds. Subsequently, depending on necessity, the glass substrate  10  is exposed from the back surface side thereof. The OC layer is then annealed by using a clean oven or the like at a temperature of from 180 to 230° C. for about 1 hour. Consequently, a wrinkled resin layer  34  having wrinkled unevenness on the surface thereof is formed in the reflection area (see  FIG. 16 ). As described in the foregoing, in this embodiment, light reflected by the exposing stage of the exposing apparatus is substantially not incident on the light-sensitive resin in the reflection area, and therefore, a wrinkled resin layer  34  having uniform wrinkled unevenness can be obtained through the subsequent UV light irradiation and heat treatment. 
     A Ti layer (or a Ti alloy layer)  17   a  and an Al layer (or an Al alloy layer)  17   b  are formed by sputtering on the whole surface of the wrinkled resin layer  34 . A resist is then coated on the whole surface of the Al layer  17   b  and patterned by using a sixth photomask to form a resist pattern having a predetermined shape. Subsequently, dry etching using a chlorine series gas is effected by using the resist pattern as an etching mask. Consequently, a reflection electrode  17  is formed in the reflection area including the wrinkled resin layer  34 . The surface of the reflection electrode  17  on the wrinkled resin layer  34  has a wrinkled uneven surface following the surface of the wrinkled resin layer  34 . The reflection electrode  17  is electrically connected to the source electrode  22  through the contact hole  26 , and is electrically connected to the storage capacitor electrode  19  through a contact hole not shown in the figure. The reflection electrode  17  is also electrically connected to the transparent electrode  16 . By the etching operation, the high melting point metal layer  72 , the Al layer  71  and the high melting point metal layer  70  of the electroconductive film  54  exposed through the opening  27  are removed, and the ITO layer  52  as the lowermost layer remains, so as to form a transparent electrode  16 . Thereafter, the substrate is subjected to a heat treatment at a temperature of from 150 to 230° C., preferably 200° C. According to the aforementioned process steps, the TFT substrate  2  shown in  FIG. 16  is completed. 
     According to this embodiment, in the step of patterning the positive light-sensitive resin layer for forming the wrinkled resin layer  34  in the reflection area, light reflected from the exposing stage is shielded by the light shielding portion  64  and the like, and thus the light is substantially not incident on the light-sensitive resin layer in the reflection area, as similar to the first to sixth embodiments. Therefore, a heat treatment by applying energy to the surface thereof in the subsequent step provides such a wrinkled resin layer  34  that has substantially uniform wrinkled unevenness formed thereon. Consequently, the reflection electrode  17  formed on the wrinkled resin layer  34  also has substantially uniform wrinkled unevenness to obtain a desired inclined plane distribution with good controllability. According to this embodiment, therefore, excellent reflection uniformity and stable reflectivity can be obtained to realize a transreflective liquid crystal display device having good reflection display characteristics. 
     Furthermore, since the light shielding portion  64  is patterned by using the same photomask (the first photomask) as the transparent electrode  16 , as similar to the fifth and sixth embodiments. The high melting point metal layer  70 , the Al layer  71  and the high melting point metal layer  72  on the transparent electrode  16  are removed through the etching step for forming the reflection electrode  17  after exposing through the opening  27  formed simultaneously with the contact hole  26 . In this embodiment, therefore, the light shielding portion  64  is formed by using no additional photomask, and thus no process step is added to the manufacturing method of the TFT substrate  2 . 
     In this embodiment, furthermore, the transparent electrode  16  and the light shielding portion  64  are patterned by using the same photomask as the gate bus line  12  and the like. Therefore, the number of photomasks can be reduced by one in comparison to the fifth and sixth embodiments. 
     While this embodiment exemplifies the TFT substrate  2  having the channel protective film type TFT  20 , the invention can also be applied to a TFT substrate  2  having a channel etching type TFT  25 . 
     Eighth Embodiment 
     A liquid crystal display substrate according to an eighth embodiment of the invention and a manufacturing method thereof will be described with reference to  FIGS. 18 to 20B .  FIG. 18  is a cross sectional view showing a constitution of a TFT substrate  2  according to this embodiment. In  FIG. 18 , the area having a TFT  20  of a pixel formed therein is shown on the left side, a transmission area of the pixel is shown at the center and a reflection area of the adjacent pixel is shown on the right side, as similar to  FIGS. 10 to 17C . As shown in  FIG. 18 , the TFT substrate  2  of this embodiment has, on an insulating film  30  in the transmission area, an a-Si layer  75 , which is formed with the same material with an active semiconductor layer  28  of the TFT  20  integrally therewith. A transparent electrode  16  is formed on the a-Si layer  75 . In the reflection area, a light shielding portion  65  is formed on the insulating film  30  but as an underlayer of a protective film  32 . The light shielding portion  65  has such a constitution that an a-Si layer  73  formed with the same material as the active semiconductor layer  28 , an ITO layer  52  formed with the same material as the transparent electrode  16  and a high melting point metal layer  74  are accumulated in this order. The layers constituting the light shielding portion  65  are patterned into the same shape. In this embodiment, while the a-Si layer  75  is formed as an underlayer of the transparent electrode  16  in the transmission area, the thickness of the active semiconductor layer  28  of the channel protective film type TFT  20  and the thickness of the a-Si layer  75  are about from 30 to 50 nm, and thus the light transmittance in the transmission area is substantially not decreased. 
     A manufacturing method of the liquid crystal display substrate according to this embodiment will be described.  FIGS. 19A to 20B  are cross sectional views showing the manufacturing method of the TFT substrate  2  according to this embodiment. As shown in  FIG. 19A , an Al layer (or an Al alloy layer)  55  and a high melting point metal layer (an Mo layer)  56  are formed in this order by sputtering directly on a glass substrate  10  or after forming a protective film, such as SiO x , thereon depending on necessity. Consequently, an electroconductive film containing the Al layer  55  and the high melting point metal layer  56  is formed. Additional examples of the high melting point metal include Cr, Ti, Ta, W and alloys thereof. A resist is then coated on the whole surface of the electroconductive film and patterned by using a first photomask to form a resist pattern having a predetermined shape. Subsequently, dry etching using, for example a chlorine series gas is effected by using the resist pattern as an etching mask. Consequently, a gate bus line  12 , a storage capacitor bus line  18  (not shown in the figure) and a gate bus line terminal (not shown in the figure) are formed. 
     As shown in  FIG. 19B , an SiN film is formed by the plasma CVD process on the gate bus line  12 , the storage capacitor bus line  18  and the gate bus line terminal on the whole surface of the substrate to form an insulating film  30 . An a-Si layer  76  is then formed by the plasma CVD process on the while surface of the insulating layer  30 . Subsequently, an SiN film is formed by the plasma CVD process on the whole surface of the a-Si layer  76 . A resist is then coated by spin coating or the like on the whole surface of the SiN film to form a resist layer. The glass substrate  10  is then exposed from the back surface side thereof by using the gate bus line  12  as a mask. Subsequently, the glass substrate  10  is exposed from the front surface side thereof by using a second photomask. The resist layer is then developed, and the resist layer in the exposed area is removed by dissolution. Consequently, a resist pattern is formed in a self aligning manner only on the area for forming the channel protective film on the gate bus line  12 . Dry etching using a fluorine series gas is then effected by using the resist pattern as an etching mask to form a channel protective film  23 . 
     An ITO layer  52  and a high melting point metal layer  74  are formed in this order by sputtering on the whole surface of the channel protective film  23 . Consequently, an electroconductive film having the ITO layer  52  and the high melting point metal layer  74  accumulated is formed on the whole surface of the substrate. A resist is then coated on the whole surface of the electroconductive film and patterned by using a third photomask to form a resist pattern having a predetermined shape. Subsequently, wet etching by using, for example, a mixed reagent of acetic acid, nitric acid and phosphoric acid, and wet etching using, for example, a reagent, such as oxalic acid, are effected by using the resist pattern as an etching mask. Consequently, a light shielding portion  65 ′ is formed on at least a portion of an area to be a reflection area, and an electroconductive film  54  is formed in the transmission area. 
     As shown in  FIG. 20A , immediately after cleaning the surface of the a-Si layer  76  by using diluted hydrofluoric acid, an n + a-Si layer is formed by the plasma CVD process on the whole surface of the substrate. A high melting point metal layer (such as a Ti layer or a Ti alloy layer)  57 , an Al layer (or an Al alloy layer)  58  and a high melting point metal layer  59  are then formed by sputtering in this order to form an electroconductive film. 
     A resist is then coated on the whole surface of the electroconductive film and patterned by using a fourth photomask to form a resist pattern having a predetermined shape. The electroconductive film, the n + a-Si layer and the a-Si layer  76  are subjected to dry etching using a chlorine series gas by using the resist pattern as an etching mask. Consequently, a drain electrode  21  and a source electrode  22  of the TFT  20 , an active semiconductor layer  28 , a storage capacitor electrode  19  (not shown in the figure), a drain bus line  14  (not shown in the figure), a drain bus line terminal (not shown in the figure) and an a-Si layer  75  are formed. The channel protective film  23  functions as an etching stopper upon etching, and the a-Si layer  76  as an underlayer thereof is not etched but remains. The source electrode  22  is electrically connected to an ITO layer  52  in the transmission area to be a transparent electrode  16  through the high melting point metal layer  74 . According to the aforementioned operations, a channel protective film type TFT  20  is formed, and simultaneously a light shielding portion  65  having the a-Si layer  73 , the ITO layer  52  and the high melting point metal layer  74  accumulated is formed. 
     As shown in  FIG. 20B , an SiN film is formed by the plasma CVD process on the whole surface of the substrate to form a protective film  32 . A resist is then coated on the whole surface of the protective film  32  and patterned by using a fifth photomask to form a resist pattern having a predetermined shape. The protective film  32  (and the insulating film  30 ) is subjected to dry etching using a mixed gas of a fluorine series gas and an O 2  gas by using the resist pattern as an etching mask. Consequently, a contact hole  26  on the source electrode  22 , a contact hole (not shown in the figure) on the storage capacitor electrode  19  and a contact hole (not shown in the figure) on the gate bus line terminal and the drain bus line terminal are formed. Simultaneously, the protective film  32  on the electroconductive film  54  in the transmission area is removed to form an opening  27 . 
     A positive light-sensitive novolak resin, for example, is coated on the whole surface of the substrate by using a spin coater or a slit coater to form a light-sensitive resin layer having a thickness, for example, of about from 0.5 to 4 μm. Subsequently, the substrate is subjected to a heat treatment at a temperature of 160° C. or lower. The light-sensitive resin layer is then exposed by using a sixth photomask and is developed by using an alkali developer solution, such as TMAH, so as to form an OC layer having a predetermined shape. The OC layer is formed on at least a portion of the area to be the reflection area. In the exposing step for patterning, since the light shielding portion  65  is formed as an underlayer (i.e., on the side of the glass substrate  10 ) of the light-sensitive resin layer, light reflected on the exposing stage of the exposing apparatus is substantially not incident on the light-sensitive resin layer in the reflection area. 
     The OC layer is then annealed at a temperature of from 100 to 180° C. for from 0.2 to 60 minutes by using a clean oven or a hot plate. The surface of the OC layer is then irradiated with UV light having a wavelength of from 200 to 470 nm at an energy density of from 10 to 550 mJ/cm 2  for from 5 to 300 seconds. Subsequently, depending on necessity, the glass substrate  10  is exposed from the back surface side thereof. The OC layer is then annealed by using a clean oven or the like at a temperature of from 180 to 230° C. for about 1 hour. Consequently, a wrinkled resin layer  34  having wrinkled unevenness on the surface thereof is formed in the reflection area (see  FIG. 18 ). As described in the foregoing, in this embodiment, light reflected by the exposing stage of the exposing apparatus is substantially not incident on the light-sensitive resin layer in the reflection area, and therefore, a wrinkled resin layer  34  having uniform wrinkled unevenness can be obtained through the subsequent UV light irradiation and heat treatment. 
     A Ti layer (or a Ti alloy layer)  17   a  and an Al layer (or an Al alloy layer)  17   b  are formed by sputtering on the whole surface of the wrinkled resin layer  34 . A resist is then coated on the whole surface of the Al layer  17   b  and patterned by using a seventh photomask to form a resist pattern having a predetermined shape. Subsequently, dry etching using a chlorine series gas is effected by using the resist pattern as an etching mask. Consequently, a reflection electrode  17  is formed in the reflection area including the wrinkled resin layer  34 . The surface of the reflection electrode  17  on the wrinkled resin layer  34  has a wrinkled uneven surface following the surface of the wrinkled resin layer  34 . The reflection electrode  17  is electrically connected to the source electrode  22  through the contact hole  26 , and is electrically connected to the storage capacitor electrode  19  through a contact hole not shown in the figure. By the etching operation, the high melting point metal layer  74  as an upper layer of the electroconductive film  54  exposed through the opening  27  is removed, and the ITO layer  52  as a lower layer remains, so as to form a transparent electrode  16 . Thereafter, the substrate is subjected to a heat treatment at a temperature of from 150 to 230° C., preferably 200° C. According to the aforementioned process steps, the TFT substrate  2  shown in  FIG. 18  is completed. 
     According to this embodiment, in the step of patterning the positive light-sensitive resin layer for forming the wrinkled resin layer  34  in the reflection area, light reflected from the exposing stage is shielded by the light shielding portion  65  and the like, and thus the light is substantially not incident on the light-sensitive resin layer in the reflection area, as similar to the first to seventh embodiments. Therefore, a heat treatment by applying energy to the surface thereof in the subsequent step provides such a wrinkled resin layer  34  that has substantially uniform wrinkled unevenness formed thereon. Consequently, the reflection electrode  17  formed on the wrinkled resin layer  34  also has substantially uniform wrinkled unevenness to obtain a desired inclined plane distribution with good controllability. According to this embodiment, therefore, excellent reflection uniformity and stable reflectivity can be obtained to realize a transreflective liquid crystal display device having good reflection display characteristics. 
     Furthermore, since the light shielding portion  65  is patterned by using the same photomask (the third photomask) as the transparent electrode  16 , as similar to the fifth to seventh embodiments. The high melting point metal layer  74  on the transparent electrode  16  is removed through the etching step for forming the reflection electrode  17  after exposing through the opening  27  formed simultaneously with the contact hole  26 . In this embodiment, therefore, the light shielding portion  65  is formed by using no additional photomask, and thus no process step is added to the manufacturing method of the TFT substrate  2 . 
     Ninth Embodiment 
     A liquid crystal display substrate according to a ninth embodiment of the invention and a manufacturing method thereof will be described with reference to  FIGS. 21 to 23B .  FIG. 21  is a cross sectional view showing a constitution of a TFT substrate  2  according to this embodiment. In  FIG. 21 , the area having a TFT  20  of a pixel formed therein is shown on the left side, a transmission area of the pixel is shown at the center, and a reflection area of the adjacent pixel is shown on the right side, as similar to  FIGS. 10 to 20B . As shown in  FIG. 21 , the TFT substrate  2  of this embodiment has, on an insulating film  30  in the transmission area, an a-Si layer  75 , which is formed with the same material with an active semiconductor layer  28  of the TFT  20  integrally therewith. An SiN film  77  formed with the same material as a channel protective film  23  of the TFT  20  is formed on the a-Si layer  75 . A transparent electrode  16  is formed on the SiN film  77 . In the reflection area, a light shielding portion  66  is formed on the insulating film  30  but as an underlayer of a protective film  32 . The light shielding portion  66  has such a constitution that an a-Si layer  73  formed with the same material as the active semiconductor layer  28 , an SiN film  77  formed with the same material as the channel protective film  23 , an ITO layer  52  formed with the same material as the transparent electrode  16  and a high melting point metal layer  74  are accumulated in this order. The layers constituting the light shielding portion  66  are patterned into the same shape. In this embodiment, while the a-Si layer  75  and the SiN film  77  are formed as underlayers of the transparent electrode  16  in the transmission area, the thickness of the active semiconductor layer  28  of the channel protective film type TFT  20  and the thickness of the a-Si layer  75  are about from 30 to 50 nm, and SiN film  77  has good light transmission, and thus the light transmittance in the transmission area is substantially not decreased. 
     A manufacturing method of the liquid crystal display substrate according to this embodiment will be described.  FIGS. 22A to 23B  are cross sectional views showing the manufacturing method of the TFT substrate  2  according to this embodiment. As shown in  FIG. 22A , an Al layer (or an Al alloy layer)  55  and a high melting point metal layer (an Mo layer)  56  are formed in this order by sputtering directly on a glass substrate  10  or after forming a protective film, such as SiO x , thereon depending on necessity. Consequently, an electroconductive film containing the Al layer  55  and the high melting point metal layer  56  is formed. Additional examples of the high melting point metal include Cr, Ti, Ta, W and alloys thereof. A resist is then coated on the whole surface of the electroconductive film and patterned by using a first photomask to form a resist pattern having a predetermined shape. Subsequently, dry etching using, for example a chlorine series gas is effected by using the resist pattern as an etching mask. Consequently, a gate bus line  12 , a storage capacitor bus line  18  (not shown in the figure) and a gate bus line terminal (not shown in the figure) are formed. 
     As shown in  FIG. 22B , an SiN film is formed by the plasma CVD process on the gate bus line  12 , the storage capacitor bus line  18  and the gate bus line terminal on the whole surface of the substrate to form an insulating film  30 . An a-Si layer  76  is then formed by the plasma CVD process on the while surface of the insulating layer  30 . Subsequently, an SiN film is formed by the plasma CVD process on the whole surface of the a-Si layer  76 . An ITO layer  52  and a high melting point metal layer  74  are formed by sputtering on the whole surface of the SiN film. A resist is then coated on the whole surface of the high melting point metal layer  74  and patterned by using a second photomask to form a resist pattern having a predetermined shape. Subsequently, by using the resist pattern as an etching mask, the high melting point metal layer  74  and the ITO layer  52  are subjected to wet etching by using, for example, a mixed reagent of acetic acid, nitric acid and phosphoric acid, and wet etching using, for example, a reagent, such as oxalic acid. Consequently, an electroconductive film  54  is formed in the transmission area, and an electroconductive film to be an upper layer of a light shielding portion  66 ′ is formed on at least a portion of the reflection area. 
     A resist is then coated on the whole surface of the substrate. The glass substrate  10  is exposed from the back surface side thereof by using the gate bus line  12  as a mask. Subsequently, the glass substrate  10  is exposed from the front surface side by using a third photomask. The resist layer is then developed, and the resist layer in the exposed area is removed by dissolution. Consequently, a resist pattern is formed in a self aligning manner only on the area for forming the channel protective film on the gate bus line  12 . The SiN film is then subjected to dry etching using a fluorine series gas by using the resist pattern, the electroconductive film  54  in the transmission area and the electroconductive film in the reflection area as an etching mask. Consequently, a channel protective film  23 , an SiN film  77  as an underlayer of the electroconductive film  54 , and an SiN film  77  as an underlayer of the light shielding portion  66 ′ are formed. 
     As shown in  FIG. 23A , immediately after cleaning the surface of the a-Si layer  76  by using diluted hydrofluoric acid, an n + a-Si layer is formed by the plasma CVD process on the whole surface of the substrate. A high melting point metal layer (such as a Ti layer or a Ti alloy layer)  57 , an Al layer (or an Al alloy layer)  58  and a high melting point metal layer  59  are formed by sputtering in this order to form an electroconductive film. 
     A resist is then coated on the whole surface of the electroconductive film and patterned by using a fourth photomask to form a resist pattern having a predetermined shape. The electroconductive film, the n + a-Si layer and the a-Si layer  76  are subjected to dry etching using a chlorine series gas by using the resist pattern as an etching mask. Consequently, a drain electrode  21  and a source electrode  22  of the TFT  20 , an active semiconductor layer  28 , a storage capacitor electrode  19  (not shown in the figure), a drain bus line  14  (not shown in the figure), a drain bus line terminal (not shown in the figure) and a-Si layers  73  and  75  are formed. The source electrode  22  is electrically connected to the ITO layer  52  in the transmission area to be a transparent electrode  16  through the high melting point metal layer  74 . According to the aforementioned operations, a channel protective film type TFT  20  is formed, and simultaneously a light shielding portion  66  having the a-Si layer  73 , the SiN film  77 , the ITO layer  52  and the high melting point metal layer  74  accumulated is formed. 
     As shown in  FIG. 23B , an SiN film is formed by the plasma CVD process on the whole surface of the substrate to form a protective film  32 . A resist is then coated on the whole surface of the protective film  32  and patterned by using a fifth photomask to form a resist pattern having a predetermined shape. The protective film  32  (and the insulating film  30 ) is subjected to dry etching using a mixed gas of a fluorine series gas and an O 2  gas by using the resist pattern as an etching mask. Consequently, a contact hole  26  on the source electrode  22 , a contact hole (not shown in the figure) on the storage capacitor electrode  19  and a contact hole (not shown in the figure) on the gate bus line terminal and the drain bus line terminal are formed. Simultaneously, the protective film  32  on the electroconductive film  54  in the transmission area is removed to form an opening  27 . 
     A positive light-sensitive novolak resin, for example, is coated on the whole surface of the substrate by using a spin coater or a slit coater to form a light-sensitive resin layer having a thickness, for example, of about from 0.5 to 4 μm. Subsequently, the substrate is subjected to a heat treatment at a temperature of 160° C. or lower. The light-sensitive resin layer is then exposed by using a sixth photomask and is developed by using an alkali developer solution, such as TMAH, so as to form an OC layer having a predetermined shape. The OC layer is formed on at least a portion of the area to be the reflection area. In the exposing step for patterning, since the light shielding portion  66  is formed as an underlayer (i.e., on the side of the glass substrate  10 ) of the light-sensitive resin layer, light reflected on the exposing stage of the exposing apparatus is substantially not incident on the light-sensitive resin layer in the reflection area. 
     The OC layer is then annealed at a temperature of from 100 to 180° C. for from 0.2 to 60 minutes by using a clean oven or a hot plate. The surface of the OC layer is then irradiated with UV light having a wavelength of from 200 to 470 nm at an energy density of from 10 to 550 mJ/cm 2  for from 5 to 300 seconds. Subsequently, depending on necessity, the glass substrate  10  is exposed from the back surface side thereof. The OC layer is then annealed by using a clean oven or the like at a temperature of from 180 to 230° C. for about 1 hour. Consequently, a wrinkled resin layer  34  having wrinkled unevenness on the surface thereof is formed in the reflection area (see  FIG. 21 ). As described in the foregoing, in this embodiment, light reflected by the exposing stage of the exposing apparatus is substantially not incident on the light-sensitive resin layer in the reflection area, and therefore, a wrinkled resin layer  34  having uniform wrinkled unevenness can be obtained through the subsequent UV light irradiation and heat treatment. 
     A Ti layer (or a Ti alloy layer)  17   a  and an Al layer (or an Al alloy layer)  17   b  are formed by sputtering on the whole surface of the wrinkled resin layer  34 . A resist is then coated on the whole surface of the Al layer  17   b  and patterned by using a seventh photomask to form a resist pattern having a predetermined shape. Subsequently, dry etching using a chlorine series gas is effected by using the resist pattern as an etching mask. Consequently, a reflection electrode  17  is formed in the reflection area including the wrinkled resin layer  34 . The surface of the reflection electrode  17  on the wrinkled resin layer  34  has a wrinkled uneven surface following the surface of the wrinkled resin layer  34 . The reflection electrode  17  is electrically connected to the source electrode  22  through the contact hole  26 , and is electrically connected to the storage capacitor electrode  19  through a contact hole not shown in the figure. By the etching operation, the high melting point metal layer  74  as an upper layer of the electroconductive film  54  exposed through the opening  27  is removed, and the ITO layer  52  as a lower layer remains, so as to form a transparent electrode  16 . Thereafter, the substrate is subjected to a heat treatment at a temperature of from 150 to 230° C., preferably 200° C. According to the aforementioned process steps, the TFT substrate  2  shown in  FIG. 21  is completed. 
     According to this embodiment, in the step of patterning the positive light-sensitive resin layer for forming the wrinkled resin layer  34  in the reflection area, light reflected from the exposing stage is shielded by the light shielding portion  66  and the like, and thus the light is substantially not incident on the light-sensitive resin layer in the reflection area, as similar to the first to eighth embodiments. Therefore, a heat treatment by applying energy to the surface thereof in the subsequent step provides such a wrinkled resin layer  34  that has substantially uniform wrinkled unevenness formed thereon. Consequently, the reflection electrode  17  formed on the wrinkled resin layer  34  also has substantially uniform wrinkled unevenness to obtain a desired inclined plane distribution with good controllability. According to this embodiment, therefore, excellent reflection uniformity and stable reflectivity can be obtained to realize a transreflective liquid crystal display device having good reflection display characteristics. 
     Furthermore, since the light shielding portion  66  is patterned by using the same photomask (the second photomask) as the transparent electrode  16 , as similar to the fifth to eighth embodiments. The high melting point metal layer  74  on the transparent electrode  16  is removed through the etching step for forming the reflection electrode  17  after exposing through the opening  27  formed simultaneously with the contact hole  26 . In this embodiment, therefore, the light shielding portion  66  is formed by using no additional photomask, and thus no process step is added to the manufacturing method of the TFT substrate  2 . 
     Tenth Embodiment 
     A liquid crystal display substrate according to a tenth embodiment of the invention and a manufacturing method thereof will be described with reference to  FIGS. 24 to 26B .  FIG. 24  is a cross sectional view showing a constitution of a TFT substrate  2  according to this embodiment. In  FIG. 24 , the area having a TFT  20  of a pixel formed therein is shown on the left side, a transmission area of the pixel is shown at the center, and a reflection area of the adjacent pixel is shown on the right side, as similar to  FIGS. 10 to 23B . As shown in  FIG. 24 , the TFT substrate  2  of this embodiment has a transparent electrode  16  on an insulating film  30  in the transmission area. In the reflection area, a light shielding portion  67  is formed on the insulating film  30  but as an under layer of a protective film  32 . The light shielding portion  67  has such a constitution that an ITO layer  52  formed with the same material as the transparent electrode  16  and a high melting point metal layer  74  are accumulated in this order. The layers constituting the light shielding portion  67  are patterned into the same shape. 
     A manufacturing method of the liquid crystal display substrate according to this embodiment will be described.  FIGS. 25A to 26B  are cross sectional views showing the manufacturing method of the TFT substrate  2  according to this embodiment. As shown in  FIG. 25A , an Al layer (or an Al alloy layer)  55  and a high melting point metal layer (an Mo layer)  56  are formed in this order by sputtering directly on a glass substrate  10  or after forming a protective film, such as SiO x , thereon depending on necessity. Consequently, an electroconductive film containing the Al layer  55  and the high melting point metal layer  56  is formed. A resist is then coated on the whole surface of the electroconductive film and patterned by using a first photomask to form a resist pattern having a predetermined shape. Subsequently, dry etching using, for example a chlorine series gas is effected by using the resist pattern as an etching mask. Consequently, a gate bus line  12 , a storage capacitor bus line  18  (not shown in the figure) and a gate bus line terminal (not shown in the figure) are formed. 
     As shown in  FIG. 25B , an SiN film is formed by the plasma CVD process on the gate bus line  12 , the storage capacitor bus line  18  and the gate bus line terminal on the whole surface of the substrate to form an insulating film  30 . An a-Si layer is then formed by the plasma CVD process on the while surface of the insulating layer  30 . Subsequently, an SiN film is formed by the plasma CVD process on the whole surface of the a-Si layer. A resist is then coated by spin coating or the like on the whole surface of the SiN film to form a resist layer. The glass substrate  10  is then exposed from the back surface side thereof by using the gate bus line  12  as a mask. Subsequently, the glass substrate  10  is exposed from the front surface side thereof by using a second photomask. The resist layer is then developed, and the resist layer in the exposed area is removed by dissolution. Consequently, a resist pattern is formed in a self aligning manner only on the area for forming the channel protective film on the gate bus line  12 . Dry etching using a fluorine series gas is then effected by using the resist pattern as an etching mask to form a channel protective film  23 . 
     Immediately after cleaning the surface of the a-Si layer by using diluted hydrofluoric acid, an n + a-Si layer is formed by the plasma CVD process on the whole surface of the substrate. A high melting point metal layer (such as a Ti layer or a Ti alloy layer)  57 , an Al layer (or an Al alloy layer)  58  and a high melting point metal layer  59  are then formed by sputtering in this order to form an electroconductive film. 
     A resist is then coated on the whole surface of the electroconductive film and patterned by using a third photomask to form a resist pattern having a predetermined shape. The electroconductive film, the n + a-Si layer and the a-Si layer are subjected to dry etching using a chlorine series gas by using the resist pattern as an etching mask. Consequently, a drain electrode  21  and a source electrode  22  of the TFT  20 , an active semiconductor layer  28 , a storage capacitor electrode  19  (not shown in the figure), a drain bus line  14  (not shown in the figure) and a drain bus line terminal (not shown in the figure) are formed. According to the aforementioned operations, a channel protective film type TFT  20  is formed. 
     As shown in  FIG. 26A , an ITO layer  52  and a high melting point metal layer  74  are formed by sputtering on the drain electrode  21  and the source electrode  22  on the whole surface of the substrate. A resist is then coated on the whole surface of the high melting point metal layer  74  and patterned by using a fourth photomask to form a resist pattern having a predetermined shape. Subsequently, by using the resist pattern as an etching mask, the high melting point metal layer  74  and the ITO layer  52  are subjected to wet etching by using, for example, a mixed reagent of acetic acid, nitric acid and phosphoric acid, and wet etching using, for example, a reagent, such as oxalic acid. Consequently, an electroconductive film  54  is formed in the transmission area, and a light shielding portion  67  is formed on at least a portion of the reflection area. 
     As shown in  FIG. 26B , an SiN film is formed by the plasma CVD process on the whole surface of the substrate to form a protective film  32 . A resist is coated on the whole surface of the protective film  32  and patterned by using a fifth photomask to form a resist pattern having a predetermined shape. The protective film  32  (and the insulating film  30 ) is subjected to dry etching using a mixed gas of a fluorine series gas and an O 2  gas by using the resist pattern as an etching mask. Consequently, a contact hole  26  on the source electrode  22 , a contact hole (not shown in the figure) on the storage capacitor electrode  19  and a contact hole (not shown in the figure) on the gate bus line terminal and the drain bus line terminal are formed. Simultaneously, the protective film  32  on the electroconductive film  54  in the transmission area is removed to form an opening  27 . 
     A positive light-sensitive novolak resin, for example, is coated on the whole surface of the substrate by using a spin coater or a slit coater to form a light-sensitive resin layer having a thickness, for example, of about from 0.5 to 4 μm. Subsequently, the substrate is subjected to a heat treatment at a temperature of 160° C. or lower. The light-sensitive resin layer is then exposed by using a sixth photomask and is developed by using an alkali developer solution, such as TMAH, so as to form an OC layer having a predetermined shape. The OC layer is formed on at least a portion of the area to be the reflection area. In the exposing step for patterning, since the light shielding portion  67  is formed as an underlayer (i.e., on the side of the glass substrate  10 ) of the light-sensitive resin layer, light reflected on the exposing stage of the exposing apparatus is substantially not incident on the light-sensitive resin layer in the reflection area. 
     The OC layer is then annealed at a temperature of from 100 to 180° C. for from 0.2 to 60 minutes by using a clean oven or a hot plate. The surface of the OC layer is then irradiated with UV light having a wavelength of from 200 to 470 nm at an energy density of from 10 to 550 mJ/cm 2  for from 5 to 300 seconds. Subsequently, depending on necessity, the glass substrate  10  is exposed from the back surface side thereof. The OC layer is then annealed by using a clean oven or the like at a temperature of from 180 to 230° C. for about 1 hour. Consequently, a wrinkled resin layer  34  having wrinkled unevenness on the surface thereof is formed in the reflection area (see  FIG. 24 ). As described in the foregoing, in this embodiment, light reflected by the exposing stage of the exposing apparatus is substantially not incident on the light-sensitive resin in the reflection area, and therefore, a wrinkled resin layer  34  having uniform wrinkled unevenness can be obtained through the subsequent UV light irradiation and heat treatment. 
     A Ti layer (or a Ti alloy layer)  17   a  and an Al layer (or an Al alloy layer)  17   b  are formed by sputtering on the whole surface of the wrinkled resin layer  34 . A resist is then coated on the whole surface of the Al layer  17   b  and patterned by using a seventh photomask to form a resist pattern having a predetermined shape. Subsequently, dry etching using a chlorine series gas is effected by using the resist pattern as an etching mask. Consequently, a reflection electrode  17  is formed in the reflection area including the wrinkled resin layer  34 . The surface of the reflection electrode  17  on the wrinkled resin layer  34  has a wrinkled uneven surface following the surface of the wrinkled resin layer  34 . The reflection electrode  17  is electrically connected to the source electrode  22  through the contact hole  26 , and is electrically connected to the storage capacitor electrode  19  through a contact hole not shown in the figure. The reflection electrode  17  is also electrically connected to the transparent electrode  16  through a portion of the opening  27 . By the etching operation, the high melting point metal layer  74  as an upper layer of the electroconductive film  54  exposed through the opening  27  is removed, and the ITO layer  52  as a lower layer remains, so as to form the transparent electrode  16 . Thereafter, the substrate is subjected to a heat treatment at a temperature of from 150 to 230° C., preferably 200° C. According to the aforementioned process steps, the TFT substrate  2  shown in  FIG. 24  is completed. 
     According to this embodiment, in the step of patterning the positive light-sensitive resin layer for forming the wrinkled resin layer  34  in the reflection area, light reflected from the exposing stage is shielded by the light shielding portion  67  and the like, and thus the light is substantially not incident on the light-sensitive resin layer in the reflection area, as similar to the first to ninth embodiments. Therefore, a heat treatment by applying energy to the surface thereof in the subsequent step provides such a wrinkled resin layer  34  that has substantially uniform wrinkled unevenness formed thereon. Consequently, the reflection electrode  17  formed on the wrinkled resin layer  34  also has substantially uniform wrinkled unevenness to obtain a desired inclined plane distribution with good controllability. According to this embodiment, therefore, excellent reflection uniformity and stable reflectivity can be obtained to realize a transreflective liquid crystal display device having good reflection display characteristics. 
     Furthermore, since the light shielding portion  67  is patterned by using the same photomask (the fourth photomask) as the transparent electrode  16 , as similar to the fifth to ninth embodiments. The high melting point metal layer  74  on the transparent electrode  16  is removed through the etching step for forming the reflection electrode  17  after exposing through the opening  27  formed simultaneously with the contact hole  26 . In this embodiment, therefore, the light shielding portion  67  is formed by using no additional photomask, and thus no process step is added to the manufacturing method of the TFT substrate  2 . 
     The invention encompasses various modifications in addition to the aforementioned embodiments. 
     For example, while a transreflective liquid crystal display device is exemplified in the aforementioned embodiments, the invention is not limited thereto and can be applied to a reflection liquid crystal display device.
A liquid crystal display substrate with multiple pixel areas each having in at least a portion thereof a reflection area and a wrinkled resin layer formed with a positive light-sensitive resin in the reflection area. The wrinkled resin layer has in at least a portion thereof a wrinkled surface and a reflection electrode. The wrinkled resin layer also includes a light shielding portion, formed as an underlayer, for shielding light incident from the substrate's back surface side, wherein at least part of the light shielding portion is formed in a same layer with the same material as a drain electrode and a source electrode of a thin film transistor and a storage capacitor electrode, to shield a large proportion of an under area of the wrinkled resin layer from light along with the drain electrode, the source electrode and the storage capacitor electrode.