FIELD OF THE INVENTION 
   The present invention relates generally to semiconductor fabrication and more specifically to formation of damascene interconnects. 
   BACKGROUND OF THE INVENTION 
   Currently, refractory metals and their nitrided compounds, such as TaN and TiN, are employed as metal barrier layers against copper (Cu) penetration into silicon oxide (SiO 2 ) and low-k dielectric materials (where a low-k dielectric material has a dielectric constant (k) of less than about 3.0). However, beyond 0.1 μm, the main advantage of using low-resistance copper interconnects will be further negated by such high-resistance metal barrier layers resulting in the great increase of total RC (resistance capacitance) time delay. 
   Moreover, with continually thinning, these metal barrier layers will have reliability concerns such as line-line leakage, time dependent dielectric breakdown (TDDB) lifetime and bias-temperature stress (BTS) due to their poor barrier integrity. 
   U.S. Pat. No. 6,358,842 B1 to Zhou et al. describes a dual damascene process. 
   U.S. Pat. No. 6,352,917 B1 to Gupta et al. describes a reverse dual damascene process. 
   U.S. Pat. No. 6,326,079 B1 to Philippe et al. describes an SiOC barrier layer. 
   U.S. Pat. No. 6,265,321 B1 to Chooi et al. describes an air bridge process for interconnects. 
   SUMMARY OF THE INVENTION 
   Accordingly, it is an object of one or more embodiments of the present invention to provide a method of forming barrierless and embedded damascene interconnects. 
   Other objects will appear hereinafter. 
   It has now been discovered that the above and other objects of the present invention may be accomplished in the following manner. Specifically, a structure having at least a first dielectric layer formed thereover is provided. The first dielectric layer is patterned to form at least one opening therethrough and exposing at least one respective portion of the structure. The at least one opening having respective side walls and a bottom. At least one respective metal structure is then formed within each respective at least one opening. The respective at least one metal structure each having respective side walls, a bottom and a top. The first dielectric layer is removed to expose the top and at least a portion of the side walls of the respective at least one metal structure. A dielectric barrier layer is formed over the structure and the exposed top of the respective metal structure. A second, conformal dielectric layer is formed over the dielectric barrier layer to complete the respective barrierless at least one metal structure embedded within the second, conformal dielectric layer. The dielectric barrier layer preventing diffusion of the metal comprising the respective at least one metal structure into the second, conformal dielectric layer. 


   
     BRIEF DESCRIPTION OF THE DRAWINGS 
     The present invention will be more clearly understood from the following description taken in conjunction with the accompanying drawings in which like reference numerals designate similar or corresponding elements, regions and portions and in which: 
       FIGS. 1  to  6  schematically illustrate a preferred embodiment of the present invention. 
   


   DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENT 
   Initial Structure— FIG. 1   
   As shown in  FIG. 1 , a structure  10  is provided having a first dielectric layer  30  formed thereover. An etch stop layer  23  may be formed over first dielectric layer  30  to a thickness of preferably from about 360 to 330 Å, more preferably from about 380 to 420 Å and most preferably about 400 Å. A second dielectric layer  31  may be formed over the etch stop layer  23 . 
   Structure  10  is preferably a silicon substrate or a germanium substrate and is understood to possibly include a semiconductor wafer or substrate, active and passive devices formed within the wafer, conductive layers and dielectric layers (e.g., inter-poly oxide (IPO), intermetal dielectric (IMD), etc.) formed over the wafer surface. The term “semiconductor structure” is meant to include devices formed within a semiconductor wafer and the layers overlying the wafer. 
   Second dielectric layer  31  is selected from a material that is easily etched away when using N 2 +H 2  reactant gases. First and second dielectric layers  30 ,  31  are preferably comprised of a low-k dielectric material and are more preferably a spin-on-low-k dielectric layer such as preferably P-SiLK (a porous low-k material manufactured by the Dow Chemical Company), JSR LKD 5109™, Nanoglass™, Xerogel™ and is more preferably P-SiLK. 
   For the purposes of this invention, a low-k dielectric material has a dielectric constant (k) of less than about 3.0. 
   Etch stop layer  23  is preferably formed of SiO x C y  (not pure SiC), SiCN or SiN and more preferably SiO x C y  (not pure SiC) where “y” is x−1 and “x” is preferably greater than about 0 and less than about 1. 
   A trench opening  33  is formed through second dielectric layer  31 , etch stop layer  23  and into first dielectric layer  30 . Trench opening  33  is preferably lined with trench liner layer  19  to a thickness of from about 90 to 110 Å, more preferably from about 95 to 105 Å and most preferably about 100 Å. Trench liner layer  19  is preferably comprised of SiC, SiCO or SiCN and is more preferably SiC. 
   A planarized trench metal structure  17  is formed within trench opening  33 . Trench metal structure  17  is preferably comprised of copper (Cu). 
   A barrier layer  21  is then formed over second dielectric layer  31  and planarized trench metal structure  17  to a thickness of preferably from about 400 to 600 Å and more preferably from about 500 to 550 Å. Barrier layer  21  functions as an etch stop layer in the formation of opening  14  (see below) and permits precise critical dimension (CD) control. 
   Barrier layer  21  is preferably comprised of SiC. 
   It is noted that the material comprising etch stop layer  23  is selected so as to not be etchable in the same environment as the material comprising barrier layer  21 . That is, it is preferred to gain good etching selectivity when etching back. 
   A third dielectric layer  12  is formed over barrier layer  21  to a thickness of preferably from about 1500 to 2500 Å, more preferably from about 1700 to 2000 Å and most preferably from about 1800 to 1900 Å. 
   Third dielectric layer  12  is selected from a material that is easily etched away when using N 2 +H 2  reactant gases. Third dielectric layer  12  is preferably comprised of a low-k dielectric material and is more preferably a spin-on-low-k dielectric layer such as preferably P-SiLK manufactured by the Dow Chemical Company, JSR LKD 5109™, Nanoglass™ or Xerogel™ and is more preferably P-SiLK. 
   Third dielectric layer  12  and barrier layer  21  are patterned to form an opening  14  exposing a portion  15  of planarized trench metal structure  17 . Opening  14  may be a dual damascene opening, a trench opening, a line opening or a via opening as shown in FIG.  1 . 
   Although barrier layer  21  is shown in  FIG. 1  for illustrative purposes (in dashed lines), it is noted that barrier layer  21  is also simultaneously etched away when forming opening  14  as shown in FIG.  2 . 
   Opening  14  has a width that may be as narrow as preferably from about 0.12 to 0.14 μm and more preferably about 0.13 μm. Opening  14  may be a via opening and, in conjunction with trench opening  33 , may comprise a dual damascene opening. 
   Formation of Etch-Protection Layer  16  and Metal Via Plug  18  Within Opening  14 — FIG. 2   
   As shown in  FIG. 2 , a conductive etch-protection layer  16  may be formed within via opening  14 , lining the sidewalls of via opening  14  and the exposed portion  15  of the planarized trench metal structure  17 . Etch-protection layer  16  has a thickness of preferably from about 45 to 55 Å, more preferably from about 48 to 52 Å and most preferably about 50 Å. 
   Etch protection layer  16  is not a metal barrier layer because of its thickness, but is comprised of a material so as to protect the metal via plug  18  during the subsequent etch back (see below), and is preferably comprised of a low resistance material such as Ta, Ti, Mo, Cr or Wand is more preferably Ta. Although not require, etch protection layer  16  is preferred for process safety due to its ability to protect metal via plug  18  during the subsequent etch back. 
   A planarized via metal plug  18  is then formed within via opening  14 . Planarized via metal plug  18  is preferably comprised of copper. 
   Etch Back to Expose Via Metal Plug  18 /Etch Protection Layer  16  and Trench Metal Structure  17 /Trench Liner Layer  19  Down to Etch Stop Layer  23 — FIG. 3   
   As shown in  FIG. 3 , third dielectric layer  12 , barrier layer  21  and second dielectric layer  31  are etched back down to the etch stop layer  23  to expose via metal plug  18 /etch protection layer  16  and partially expose trench metal structure  17 /trench liner layer  19 . The etch back employs reactant gasses that etch third and second dielectric layers  12 ,  31  and barrier layer  21  while not etching etch stop layer  23 . It is important that oxygen (O 2 ) not be used or present in the etch back to ensure the copper surfaces are not oxidized. The etch back preferably employs N 2  and H 2  reactant gasses. 
   Conformal Deposition of Dielectric Barrier Layer  20 — FIG. 4   
   As shown in  FIG. 4 , a dielectric barrier layer  20  is conformally and continuously deposited over the structure of  FIG. 3  to a thickness of preferably from about 90 to 110 Å, more preferably from about 95 to 105 Å and most preferably about 100 Å. This thickness is selected to be well controlled. 
   Dielectric barrier layer  20  covers the formerly exposed via metal plug  18 /etch protection layer  16 , partially exposed trench metal structure  17 /trench liner layer  19  down to the etch stop layer  23  and etch stop layer  23 . 
   Dielectric barrier layer  20  is preferably comprised of SiC, SiOC, SiCN or SiN and is more preferably SiC. Dielectric barrier layer  20  is comprised of a material that will not permit diffusion or migration of the metal from the trench metal structure  17  and the metal via plug  18 . 
   Formation of Fourth Low-k Dielectric Layer  22 — FIG. 5   
   As shown in  FIG. 5 , a fourth low-k dielectric layer  22  is formed over the dielectric barrier layer  20  to a thickness  36  above the metal via plug  18 . Fourth low-k dielectric layer  22  preferably is a spin-on-low-k dielectric material (i.e. a dielectric constant (k) of less than about 3.0) and has excellent conformal coverage and is preferably comprised of P-SiLK, JSR LKD 5109, Nanoglass™ or Xerogel™ and is more preferably P-SiLK. 
   Fourth low-k dielectric layer  22  has excellent conformal coverage so that narrow gaps between metal/copper lines may be properly filled. Thus, a spin-on coating is preferred. 
   Planarization of Fourth Low-k Dielectric Layer  22 — FIG. 6   
   As shown in  FIG. 6 , the fourth low-k dielectric layer  22  is planarized to form a planarized fourth low-k dielectric layer  22 ′. The planarization process, which is preferably a chemical mechanical polishing (CMP) process, also preferably removes the dielectric barrier layer  20  from over the metal via plug  18  so that the height of the planarized fourth low-k dielectric layer  22 ′ is equal to the height of the metal via plug  18  as shown in FIG.  6 . 
   It is noted that there is not an etch stop layer between the metal via plug  18  and the trench metal structure  17 . Further the metal via plug  18  and the trench metal structure  17  are embedded within dielectric barrier layer  20 , which is more preferably comprised of SiC, so that the metal/metal ions can not diffuse/migrate out into the surrounding fourth low-k dielectric layer  22 . 
   First, second, third and fourth low-k dielectric layers  30 ,  31 ,  12 ,  22  are preferably comprised of the same material and are more preferably each comprised of P-SiLK. 
   It is noted that the method of the present invention may be employed to form barrierless and embedded metal lines, via plugs, trench structures and other metal structures used in semiconductor fabrication and for other purposes. 
   Advantages of the Present Invention 
   The advantages of one or more embodiments of the present invention include:
     1. no need for dielectric via-filling and Ar-sputtering at the via bottom;   2. time dependent dielectric breakdown (TDDB) lifetime improvement;   3. electomigration (EM) lifetime enhancement;   4. RC delay reduction; and   5. the method of the present invention is compatible with exiting tools and processes.   

   While particular embodiments of the present invention have been illustrated and described, it is not intended to limit the invention, except as defined by the following claims.
A method for forming at least one barrierless, embedded metal structure comprising the following steps. A structure having a patterned dielectric layer formed thereover with at least one opening exposing at least one respective portion of the structure. Respective metal structures are formed within each respective opening. The first dielectric layer is removed to expose the top and at least a portion of the side walls of the respective at least one metal structure. A dielectric barrier layer is formed over the structure and the exposed top of the respective metal structure. A second, conformal dielectric layer is formed over the dielectric barrier layer to complete the respective barrierless at least one metal structure embedded within the second, conformal dielectric layer. The dielectric barrier layer preventing diffusion of the metal comprising the respective at least one metal structure into the second, conformal dielectric layer.