CROSS-REFERENCE TO RELATED APPLICATIONS 
   The present invention is a continuation of U.S. application Ser. No. 10/241,646 entitled “Voltage Regulator and Data Path for a Memory Device” filed 11 Sep. 2002 abandoned, which is a continuation of U.S. application Ser. No. 09/654,099 entitled “Voltage Regulator and Data Path for a Memory Device” filed 31 Aug. 2000, issued as U.S. Pat. No. 6,545,929. 


   BACKGROUND 
   The present invention is directed to memory devices generally and, more particularly, to voltage regulators and data paths used in such devices. 
   Solid state memory devices communicate with the outside world through input/output pads. Some pads may be connected to an address bus and are thus dedicated to receiving address information. Other pads may be connected to a command bus from which command signals are received while still other pads are connected to a data bus, on which data to be written into the memory is received or data read from the memory is output. In other types of devices, the pads may be connected to a single multiplexed bus which, at one point in time outputs address and command information and, at another point in time, outputs or receives data. 
   To enable pads to receive or send information, the information is transmitted in the form of ones and zeros. The “ones” and “zeros” are typically represented by two different voltage levels. For example, a voltage between two and five and one half volts may be considered to represent a high signal, or a “one”, while a voltage level of between minus 0.3 volts and plus 0.8 volts may be considered to represent a low signal, or a “zero”. The output pads must be capable of reliably producing voltages within the ranges designated as representing ones and zeroes in accordance with timing specifications set for the component. 
   Timing specifications are typically set by the consumers of the memory devices for particular applications. A timing specification would identify how long it may take for an output pad to change from a zero to a one, e.g. change from minus 0.3 volts to plus five volts, how abrupt the changes must be, etc. With access times for memory devices measured in nanoseconds, it is clear the design engineer is faced with quite a challenge to design electrical circuits which can change the voltage available at the output pads so quickly. 
   Output pads typically are serviced by a number of circuits such as circuits for buffering (holding) data, and drive circuits for driving the voltage on the pad to a voltage representative of data to be output. The drive circuit, in turn, is serviced by devices such as voltage generators and voltage regulators which provide the power needed by the output pad drivers. The voltage regulator is used to provide power, in the form of voltage for driving the gate of an output transistor ultimately servicing an output pad. Typically, voltage regulators supply that gate voltage (Vgate) to a number of drive transistors through a voltage bus. 
   When the gate voltage is heavily loaded, the Vgate level recovery may not be sufficiently quick. Prior art attempts at solving this problem apply a one-shot pulse to an enable Vgate line. However, because the path between Vgate and the enable Vgate line is through a p-channel transistor with its n-well biased to Vgate, there is a risk of forward biasing the drain of the p-channel to the n-well if the one-shot pulling the enable V-gate line towards system voltage (V DD ) is not timed properly across all process and device conditions. Additionally, if the one-shot timing is too weak under particular process and device conditions, then Vgate will droop, and the enable Vgate lines will not recover sufficiently quickly. 
   Another problem is experienced in the prior art when the memory device, and hence the voltage regulator, must go into a nap or a standby mode. In such modes, the Vgate regulator needs to go to a low power mode very quickly. In some prior art configurations, that is accomplished by reducing the bias voltage supplied to an amplifier within the voltage regulator. However, simply reducing the bias voltage may not reduce the power consumption of the voltage regulator sufficiently quickly. 
   Another problem is encountered because output transistors typically have an RC time constant associated therewith as a result of their loading. The RC time constant prevents the output transistor from reducing its drive sufficiently quickly. In the prior art, a pass gate is used to disconnect the RC so that the output transistor can respond more quickly. However, that approach leaves one side of the RC load floating. Due to n-plus junctions, the floating side can move to a back bias voltage. Should that occur, when the RC is reconnected to the transistor, the transistor would be turned on hard. 
   Other problems associated with the data path relate to the output slew of data pad drivers. In the prior art, output slew rates are improved by segmenting the output transistors into two main portions and delaying the switching of one of the portions. The delay is controlled by a circuit that makes a determination as to the strength of the p- and n-channel transistors and generates a two-bit binary code. In addition to setting the delay based on the two-bit code, a NAND gate is used to receive the two-bit signal which, in turn, enables a p-channel transistor to further enable two other p-channel transistors in the output pre-driver so that they could strengthen the high side out of the pre-driver for both the normal and delayed paths. However, various changes over process and device conditions can cause the output&#39;s timing characteristic to be skewed. Because the prior art solution enables only the addition of p-channel transistors in one of the two-bit code cases, the degrees of freedom to compensate for various types of skew are limited. 
   Thus, the need exists for a voltage regulator and data path with improved performance characteristics. 
   SUMMARY 
   One aspect of the present invention is directed to a method and apparatus of boosting the gate voltages for transistors controlling the voltage appearing on output pads of a solid state memory device, with the gate voltages being supplied by a voltage regulator through an output bus. The demand for gate voltage is periodically determined and, when the demand is high, each line of the bus may be momentarily connected to a voltage source. In addition, additional current is temporarily sourced to the output terminal of the voltage regulator. 
   Another aspect of the present invention is directed to a method and apparatus of producing a control pulse of an extended duration for use in the voltage regulator having its output terminal connected to a voltage bus, and with the voltage bus serving a plurality of output blocks through a plurality of output lines. A first logic gate receives a plurality of signals each representative of the voltage demand of one of the plurality of output blocks and produces a control pulse of a first duration. A plurality of delay circuits receives the control pulse and produces a plurality of delayed control pulses. A second logic gate receives the control pulse and the plurality of delayed control pulses and produces a control pulse of extended duration. The control pulse of extended duration may be used, for example, for temporarily sourcing additional current to an output terminal of the voltage regulator. 
   According to another aspect of the present invention, a method is disclosed of forcing a voltage regulator into a low power mode. The method involves increasing the rate at which a bias voltage is withdrawn from an amplifier in the voltage regulator. A node between a resistive and capacitive load connected to an output transistor of the voltage regulator is pulled to a predetermined voltage other than ground. By reducing the bias voltage, power consumption is rapidly diminished. Furthermore, by pulling the node to a predetermined voltage other than ground, the node is prevented from floating to a voltage which will turn the transistor on hard when reconnected. 
   Another aspect of the present invention is directed to a pre-driver or the like which provides variable output drive capability. The pre-driver is comprised of two paths each divided into output stages. A two-bit signal is generated in response to determining the relative strength of the n-channel and p-channel transistors in a subsequent output amplifier. The two-bit signal is then used to enable certain of the output stages in each of the output paths. 
   The present invention solves the problems encountered in prior art voltage regulators used in memory devices or other types of demanding applications. For example, the present invention insures that the power provided by the voltage regulator is adequate even under heavy load conditions. The present invention insures that the power consumption is quickly reduced when the device is put into a nap or standby mode while at the same time insuring that the device will properly power up when desired. The present invention also improves the performance of the data path. Those, and other advantages and benefits, will become apparent from the Description of the Preferred Embodiment hereinbelow. 


   
     BRIEF DESCRIPTION OF THE DRAWINGS 
     For the present invention to be easily understood and readily practiced, the present invention will now be described, for purposes of illustration and not limitation, in conjunction with the following figures wherein: 
       FIG. 1  is a block diagram of a memory device illustrating a voltage regulator servicing a number of output blocks; 
       FIG. 2  is a circuit diagram of an output block of  FIG. 1 ; 
       FIG. 3  is a circuit diagram illustrating one implementation of a voltage regulator constructed according to the teachings of the present invention; 
       FIG. 4  is a circuit diagram of control circuit used in conjunction with the voltage regulator of  FIG. 3 ; 
       FIG. 5  is a circuit diagram of a circuit for controlling the decrease in bias voltage supplied to the differential amplifier of  FIG. 3 ; 
       FIG. 6  illustrates an implementation for the output transistors of a data pre-driver or the like; and 
       FIG. 7  is a block diagram of a computer system in which the memory device of  FIG. 1  may be used. 
   


   DESCRIPTION 
   The present invention will now be described in conjunction with  FIG. 1  which illustrates a memory device  10 . The reader will understand the description of the present invention in conjunction with the memory  10  of  FIG. 1  is merely for purposes of providing one example of an application for the present invention. The present invention is not to be limited to the application shown in  FIG. 1 . 
   The memory device  10 , includes an array  12  of memory cells. The memory cells  12  are arranged in rows and columns as is known in the art. Individual cells in the array  12  may be selected for a read or write operation by row decode circuitry  14  and column decode circuitry  16  which operates in response to command information on a command bus  18  and address information on an address bus  20 . Signals appearing on the command bus  18  may include, but are not limited to, chip select, row address strobe, column address strobe, write enable and clock enable. Sense amps  22  read information out of and write information into cells which have been selected by row decode circuitry  14  and column decode circuitry  16  in response to read and write commands, respectively. 
   The sense amps  22  form part of a data path shown generally by reference numeral  24 . The data path  24  is the path along which data flows between a data bus  26  and the array  12 . For inbound data (data to be written into array  12 ), the data path begins at data pads  28  and ends with sense amps  22  writing the data into the array  12 . For outbound data (data read from array  12 ), the path begins with the sense amps reading the data from the array  12  and ends with the data being output on the data pads  28 . 
   The data path  24  is comprised of a number of circuits for buffering and amplifying the data which are not shown as they do not form a part of the present invention. A plurality of output blocks  30  is arranged such that each output block  30  services one of the data pads  28 . An example of a typical output block  30  is illustrated in  FIG. 2 . In  FIG. 2 , the output block  30  is comprised of a first plurality of enable transistors  31 , each connected in series with a drive transistor  32 . The transistors  31  each receive the data signal q, while each of the drive transistors receives one of the Vgate enable signal EnVg&lt;0&gt;, EnVg&lt;1&gt; . . . EnVg&lt;6&gt;. The output block is further comprised of a second plurality of enable transistors  33 , each connected in series with a drive transistor  32 . The first and second pluralities of enable transistors  31 ,  33 , respectively, must be fully turned on by the signals q and ql for the drive transistors  32  to provide the proper pull-down load to the data pad  28  that it is servicing so that the voltage level necessary to represent the data being transferred is quickly reached. Each of the other output blocks  30  may be identically constructed, and each receives the data signals q and ql and Vgate enable signals EnVg&lt;0&gt; through &lt;6&gt;. 
   Each of the lines carrying the Vgate enable signals EnVg&lt;0&gt; through &lt;6&gt; is connected to a system voltage, V DD , through a p-channel transistor  34 . The gate of each of the transistors  34  is connected to a control circuit  36  through an inverter  38 . The transistors  34  thus provide a plurality of switches which, under the control of control circuit  36 , may momentarily connect the lines carrying the Vgate enable signals to the voltage source V DD . 
   Completing the description of  FIG. 1 , a voltage regulator  40  provides the voltage for the Vgate enable signals through Vgate enable control  41 . Vgate enable control  41  provides the Vgate enable signals to the output blocks  30  through a bus  42 . The bus  42  is comprised of a plurality of lines each carrying one of the Vgate enable signals EnVg&lt;0&gt; through &lt;6&gt;. 
   Turning now to  FIG. 3 , a circuit diagram illustrating one implementation of the voltage regulator  40  constructed according to the present invention is illustrated. The voltage regulator  40  has an output terminal  44 . A p-channel transistor  46  is connected between a voltage source and the output terminal  44  and an n-channel transistor  48  is connected between the output terminal  44  and ground. 
   A transistor  50  receives at its gate terminal, through a pass gate  52 , the same signal (OUT 1) that the transistor  46  receives. The pass gate  52  is operative in response to a boost signal produced by the control circuit  36 . The boost signal is also input to a gate terminal of a p-channel transistor  54  through an inverter  56 . The p-channel transistor  54  is connected across a gate terminal of the p-channel transistor  50  and a voltage source. 
   In  FIG. 4 , a circuit diagram of a control circuit  36  which may be used in conjunction with the voltage regulator of  FIG. 3  is illustrated. In  FIG. 4 , a plurality of one-shot multivibrators  56  is provided. Each of the one-shots is triggered if its corresponding Vgate enable signal is enabled through Vgate enable control  41 . An exemplary embodiment for one of the one-shots  56  is illustrated at  56 ′. One-shot  56 ′ receives a signal &lt;6&gt; indicative of the need to enable the Vgate enable signal EnVg&lt;6&gt;. When the signal &lt;6&gt; indicates the need to enable the signal EnVg&lt;6&gt;, and an enable signal V-GCC_EN is present, the one-shot  56 ′ produces an output pulse  58 . The output pulse  58  is input to the transistor  34  through the inverter  38  shown in  FIG. 1  to momentarily render the p-channel transistor  34  conductive. In that manner, the line carrying the signal EnVg&lt;6&gt; is momentarily connected to the voltage source V DD , with the time of connection being determined by the width of the pulse  58 . The other one-shots  56  are similarly constructed and used to momentarily connect the other lines carrying the Vgate enable signals to the voltage source V DD . 
   NOR gates  60 ,  61  and  62  are used to aggregate the pulses produced by the one-shots  56 . The outputs of the NOR gates are input to a first logic gate  64  which is a NAND gate. The output of the NAND gate  64  is connected to an input of a second gate which is a NOR gate  66 . The output of the NAND gate  64  is also connected to a second input of the NOR gate  66  through a delay circuit  68 . The output of the delay circuit  68  is connected to another input of the NOR gate  66  through a second delay circuit  70 . The boost signal described above in conjunction with  FIG. 3  is available at an output terminal of the NOR gate  66 . That signal may be delayed further by propagating it through a pair of inverters  71  and  72 . 
   The operation of the circuitry described thus far will now be explained. When the Vgate signal is loaded heavily as a result of various conditions (e.g. during switching of the EnVg lines), the Vgate level at output terminal  44  in  FIG. 3  may not recover sufficiently quickly. Two steps are taken to boost the voltage. The first step is to render the p-channel transistor  34  servicing the relevant line carrying the Vgate enable signal which has just been enabled momentarily conductive through use of the pulse  58 . That enables the individual line carrying the particular Vgate enable signal to be momentarily connected to the voltage source V DD . Thus, the plurality of transistors  34  may be considered to be part of a booster circuit as their function is to momentarily boost the voltage available to the particular line carrying the Vgate enable signal which has just been enabled. 
   The second step which is taken is described in conjunction with  FIG. 3 . When the boost signal goes active low, pass gate  52  becomes conductive which renders transistor  50  conductive which gives the voltage regulator  40  much more pull-up capability. At the same time, transistor  54  is turned off. With the p-channel side of the regulator&#39;s output thus strengthened, the voltage regulator  40  has about a  20  millivolt higher Vgate regulation point. That helps Vgate hit its final value under heavy load conditions. Thus, the circuitry within the dotted box  74  may also be considered to be part of a booster circuit comprised of a transistor  50  with the remaining components comprising a control circuit for controlling the conductivity of transistor  50 . 
   If only the p-channel side of the voltage regulator  40  is strengthened, somewhat of an offset is created because the p-channel side of the output has more current carrying capability than the n-channel side. That offset can be compensated by adding a booster circuit  75  which is similar to the circuit  74 . In the booster circuit  75 , the transistor  50  becomes an n-channel transistor  50 ′. The control portion of the booster circuit  75  is likewise changed as follows:
         the transistor  54  becomes an n-channel transistor  54 ′. The transistors  50 ′ and  54 ′ have their source and well connections to V ss  and V bb , respectively. The input to pass gate  52 ′ is the same signal input to the gate of transistor  48 . Transistor  54 ′ receives the active low boost signal directly. The sizing of the various components comprising the booster circuit  75  would be such that the offset would be nulled out.       

   In summary, when selected Vgate enable signals are initially enabled, the booster circuit comprised of the plurality of transistors  34  is rendered operative so that one, some or all of the transistors  34  are rendered conductive to momentarily connect the line(s) carrying the Vgate enable signal(s) to a voltage source. The boost signal, produced under heavy load conditions, enables the output terminal  44  of the voltage regulator  40  to be sourced with additional current through booster circuit  74  in an unbalanced mode, or through booster circuits  74  and  75  in a balanced mode. 
   Production of the boost signal will now be described in conjunction with  FIG. 4 . In  FIG. 4 , the NAND gate  64  produces a control pulse whenever it receives a low going pulse at one or more of its input terminals. The NAND gate  64  will produce a control pulse whenever selected Vgate enable signals are initially enabled. Optionally, the lowest three lines, lines 2, 1 and 0 can be optioned out by a switch  76  because the capacitance on those lines is so small that Vgate is not affected much when they turn on. Obviously, the selection of other types of gates and other arrangements of gates could cause the control pulse to be produced under different conditions. 
   It has been found that the control pulse produced by the NAND gate  64  is not of sufficient duration. As a result, the control pulse is input directly to the second gate  66  to cause the gate  66  to change states to a low state. The control pulse is also input to the gate  66  through the delay circuit  68 . In that manner, as the control pulse from gate  64  prepares to end, a delayed control pulse produced by delay circuit  68  becomes available at an input terminal of the gate  66 , thereby insuring that the output of the gate  66  does not change state. In a similar manner, the delayed control pulse produced by the delay circuit  68  is input to the second gate  66  through the delay circuit  70  such that when the delayed control pulse produced by the delay circuit  68  is preparing to end, the delayed control pulse produced by the delay circuit  70  is input to an input terminal of the gate  66  thereby insuring that the output of the gate  66  does not change when the delay pulse produced by the delay circuit  68  ends. By chaining together a plurality of delay circuits  68  and  70 , and producing a plurality of delayed control pulses, a control pulse of extended duration can be obtained at the output of the second gate  66 . Additional delay circuits  68 ,  70  can be added to increase the length of the control pulse of extended duration. The control pulse of extended duration is the boost signal which is input to the control portion of the booster circuit  74 . 
   The delay circuits  68  and  70  together with the NOR gate  66  may be viewed as a pulse extender. To insure glitch-free operation, the pulse extender of the present invention should have outputs taken from enough points along the delay line to insure no glitch in the extended pulse. 
   Returning to  FIG. 3 , the voltage regulator  40  may have a differential amplifier  78  which produces a first output signal, OUT 1, for directly driving transistor  46  and a second output signal, OUT 2, which indirectly drives transistor  48 . A bias voltage is supplied to the differential amplifier  78  through an n-channel transistor  82 . Transistor  82  is responsive to a control signal VgRegBias. A transistor  84  is connected in series with a transistor  85 , with the two transistors  84  and  85  connected in parallel with the transistor  82 . The boost signal may be additionally used to control the transistor  84 . Because the boost signal is active low, an active high version is taken from the output of inverter  56 , such that when the boost signal is active, the transistor  84  is turned on. 
   When going into nap or standby modes, the voltage regulator needs to go to a low power mode very quickly. It has been determined that the steps currently taken to reduce the bias voltage, by decreasing the control signal VgRegBias, are insufficient. As shown in  FIG. 5 , a one-shot  86  is responsive to a signal VgNap which is responsible for putting the voltage regulator  40  into a nap or standby mode. The one-shot  86  produces an output pulse which temporarily renders transistor  88  conductive. When the transistor  88  is conductive, a transistor  90 , connected to operate as a diode, pulls the signal VgRegBias within a Vt of ground thereby causing it to decrease even more rapidly. When the single pulse produced by the one-shot  86  is no longer available, the diode  90  is no longer conductive as the transistor  88  is turned off. In that manner the reduction in bias voltage can be increased. 
   It has been determined that even if the voltage reduction of the signal VgRegBias occurs sufficiently quickly, a compensation resistor  92  and compensation capacitor  94 , which are a load across the transistor  46 , can keep the p-channel transistor  46  from reducing its drive sufficiently quickly. The pulse produced by the one-shot  86  of  FIG. 5  is used to pull a node  96  between the resistor  92  and capacitor  94  to a predefined voltage other than zero through a transistor  98 . In the embodiment shown in  FIG. 3 , the predefined voltage is V DD  which allows transistor  46  to go to a low power mode very quickly. This actually shuts off the transistor  46  briefly, but because that shutoff occurs at the beginning of a nap or standby mode, the shutoff is a non-issue. To avoid that brief shutoff, instead of pulling the node  96  up to V DD , the node  96  could be pulled up to a large p-channel diode tied to V DD . The p-channel diode must be sized such that it allows quick pullup while leaving transistor  46  on near steady state nap or standby conditions. That embodiment comes at a layout expense as the p-channel diode needs to be sufficiently large. 
   Illustrated in  FIG. 6  is an output pre-driver circuit  100 . The pre-driver circuit  100  is constructed of a first data path  102  responsive to a data signal Q and a second data path  104  responsive to a delayed version of the data signal Q′. The first data path  102  has two output transistor drive stages  106  and  108  while the second data path  104  similarly has two transistor output drive stages  110  and  112 . The transistors  106  and  110  are enabled when a signal sl 1  renders a transistor  114  conductive. The transistors  108  and  112  are operative when a signal sl 2  renders a transistor  116  conductive. 
   It is known in the art to monitor the strength of the p-channel and n-channel transistors in an output drive device (not shown) and to generate a two-bit signal where sl 1  and sl 2  represent the two bits of the binary signal. The implementation of the output pre-driver  100  in  FIG. 6  allows the p-channel device  106  to be rendered conductive independently of the p-channel device  108 . The p-channel device  110  can be enabled independently of the p-channel transistor  112 . As a result, all four transistors  106 ,  108 ,  110  and  112  may be on, transistors  106  and  110  may be on while transistors  108  and  112  may be off, and transistors  108  and  112  may be on while transistors  106  and  110  are off. With the arrangement shown in  FIG. 6 , three of the four two-bit codes can have different total amounts of p-channel drive enabled in the pre-driver  100 . With proper tuning, more skew can be eliminated from the subsequent output driver stages with the pre-driver  100  illustrated in  FIG. 6 . 
     FIG. 7  illustrates a computer system  200  containing the memory of  FIG. 1 . The computer system  200  includes a processor  202  for performing various computing functions, such as executing specific software to perform specific calculations or tasks. The processor  202  includes a processor bus  204  that normally includes an address bus, a control bus, and a data bus. In addition, the computer system  200  includes one or more input devices  214 , such as a keyboard or a mouse, coupled to the processor  202  to allow an operator to interface with the computer system  200 . Typically, the computer system  200  also includes one or more output devices  216  coupled to the processor  202 , such output devices typically being a printer or a video terminal. One or more data storage devices  218  are also typically coupled to the processor  202  to allow the processor  202  to store data in or retrieve data from internal or external storage media (not shown). Examples of typical storage devices  218  include hard and floppy disks, tape cassettes, and compact disk read-only memories (CD-ROMs). The processor  202  is also typically coupled to cache memory  226 , which is usually static random access memory (“SRAM”) and to an SDRAM  228  through a memory controller  230 . The memory controller  230  normally includes a control bus  236  and an address bus  238  that may be coupled to the SDRAM  228 . A data bus  240  may be coupled to the processor bus  204  either directly (as shown), through the memory controller  230 , or by some other means. 
   While the present invention has been described in conjunction with preferred embodiments thereof, those of ordinary skill in the art will recognize that many modifications and variations may be made. The foregoing description and the following claims are intended to cover all such modifications and variations.
A method of boosting the voltage supplied to an output pad driver through a bus connected to a voltage regulator. The method comprises momentarily connecting the bus directly to a voltage source and temporarily enabling the voltage regulator to source additional current to an output terminal thereof. A method of boosting the gate voltages for transistors controlling the voltage appearing on output pads of a solid state memory device, the gate voltages supplied by a voltage regulator through an output bus. The method comprises periodically determining the demand for gate voltage and, when the demand is high, momentarily connecting each line of the bus to a voltage source, and temporarily enabling the voltage regulator to source additional current to an output terminal thereof.