BACKGROUND OF THE INVENTION 
     1. Field of the Invention 
     The present invention relates to a semiconductor device, and in particular to a semiconductor device comprising a capacitance adjustment section for conducting adjustment of wiring capacitance in a simple and rational manner. 
     The present specification is based on Japanese Patent Application, Unpublished, No. Hei 11-133286 which has been submitted in Japan and the content of which is incorporated as one portion of the present specification. 
     2. Description of the Related Art 
     FIG. 6 shows a sample construction, by conventional techniques, of a DRAM (Dynamic Random Access Memory). Up to now in semiconductor devices such as DRAM, package miniaturization has progressed considerably, in order to ensure that even with the increases in chip surface area associated with increasing memory capacity, the packaging density is not lowered. FIG. 6 shows an example of a CSP (chip size package) of a recently employed package type in which miniaturization has progressed significantly. In the CSP shown, a substrate  100  of a polyimide and a semiconductor chip  101  are fixed together with the chip surface facing the substrate and then sealed with a resin  102 . A plurality of solder balls  103  which function as external terminals are provided on the lower surface of the substrate  100 , while a plurality of pads (not shown in the figure) which function as chip wiring terminals are formed on the surface of the semiconductor chip  101 . Each solder ball  103  and each pad are then connected electrically via copper wiring (not shown in the figure) formed on the upper surface of the substrate, and conducting materials (not shown in the figure) which are imbedded in through holes which penetrate through the substrate. 
     FIG. 7 is a schematic diagram showing a circuit block of a semiconductor chip. The chip comprises four memory cell blocks  104 , and peripheral circuits  105  disposed about the periphery thereof. A single line of a plurality of pads  106  is formed in the center of the chip. In the figure, the wiring connected to the pads  106  has been omitted. 
     FIG. 8 shows the aforementioned DRAM viewed from beneath (from the solder ball side). In this example DRAM, the solder balls  103  on the substrate  100  are disposed in three lines on each of the left and right hand sides, while the pads  106  on the semiconductor chip  101  are disposed in a centrally positioned single line. Consequently, the wiring  107  for connecting each of the solder balls  103  and each of the pads  106 , cannot be wired in a straight line, and must be suitably managed so as to avoid short circuits with other wiring  107 . Moreover in FIG. 8 only a portion of the wiring  107  for connecting the solder balls  103  and the pads  106  is shown, although the remaining portions are wired in a similar manner. 
     However, as is evident from FIG. 8, because the length of each section of wiring  107  differs, the wiring capacitance of each section of wiring  107  will also differ. That is, the wiring capacitance from the external terminal of the DRAM to the pad will vary between pins, and left as is, there is a danger that the signal timing during the operations for the reading and writing of data will vary between pins, resulting in an error. Consequently, in this type of semiconductor chip, a capacitance adjustment section is usually provided for matching the wiring capacitance of each section of wiring. 
     FIG. 9 is a diagram showing the construction of a capacitance adjustment section of the aforementioned DRAM. The capacitance adjustment section  108  is basically constructed according to gate capacitance. That is, a capacitance is formed from a diffusion layer  109  formed on the surface of the semiconductor substrate, and gate electrodes  110   a,    110   b,    110   c,  and  110   d  which oppose the diffusion layer  109  via a gate insulating film. Furthermore, the plurality (four in the example shown) of gate electrodes  110   a,    110   b,    110   c,    110   d  are provided for adjusting the capacitance value to various values, and each gate electrode  110   a,    110   b,    110   c,    110   d  is connected to a first aluminum wiring  112  via a through hole  111 . Each of the first aluminum sections of wiring  112  are connected respectively to a second aluminum wiring  114  via a through hole  113 . Each of the second aluminum sections of wiring  114  is then connected to an input signal line  116  connected to an input pad  115 . 
     Moreover in the present specification, “first aluminum wiring” refers to the first layer side (the lower layer) of aluminum wiring of a double layer wiring construction, whereas “second aluminum wiring” refers to the second layer side (the upper layer) of aluminum wiring. 
     The gate length of each of the aforementioned four gate electrodes  110   a,    110   b,    110   c  and  110   d  is different, and referenced against the shortest gate length, the other gate lengths are set to values twice, three times, and four times as long respectively. Correspondingly, the capacitance values when referenced against the capacitance of the shortest gate length are twice, three times, and four times as large respectively. That is, the capacitance values are set so that the sequence of values from the shortest gate length to the longest gate length are, for example, 10fF (femtoFarad), 20fF, 30fF, and 40fF respectively. 
     In a DRAM provided with this type of capacitance adjustment section  108 , the matching of wiring capacitance is conducted by assembling the semiconductor chip into a packaged state, and following measurement and evaluation of the electrical characteristics of the package, using the evaluation results to determine the input signal wiring sections which require additional capacitance to match the largest observed wiring capacitance, and then using the capacitance adjustment section  108  to add the necessary capacitance. In the case where capacitance is actually to be added, the value of the capacitance being added is altered by making a design change to the mask pattern of the second aluminum wiring, and connecting a gate capacitance with one of the four aforementioned capacitance values to the input signal wiring. Consequently, in the case of the example described above, by suitable combinations of the four different gate capacitances, capacitance additions of between 10fF and 100fF in increments of 10fF are possible. 
     However, the following problems arise with the conventional DRAM wiring capacitance adjustment methods described above. 
     Conducting adjustments of the wiring capacitance by combining gate capacitances for which the capacitance values are fixed, means that adjustments can only be made for limited increments (10fF in the case of the above example) and up to a limited upper limit (100fF in the case of the above example), and so fine adjustments in the capacitance value are difficult to achieve. Provision of a plurality of gate capacitances incorporating smaller capacitance values can be seen as a way of alleviating this problem, but in such cases the increase in the number of gate capacitances increases the surface area occupied by the capacitance adjustment section, resulting in an undesirable increase in the surface area of the chip. Furthermore, addition of each new gate capacitance requires a design change in the mask pattern of the lower layer, meaning the time and effort required for mask design changes increases undesirably. 
     SUMMARY OF THE INVENTION 
     An object of the present invention is to provide a semiconductor device comprising a capacitance adjustment section which enables the free setting of the amount of adjustment of a wiring capacitance and for which the adjustment operation can be carried out simply. 
     In order to achieve the above object, a semiconductor device of the present invention comprises the following two methods. 
     First, a first semiconductor device according to the present invention comprises a capacitance adjustment section for adjusting wiring capacitance, and the capacitance adjustment section further comprises a capacitance adjustment wiring which is connected to a target wiring for capacitance adjustment for adjusting wiring capacitance, and a constant voltage wiring which is formed on the same layer as the capacitance adjustment wiring and to which is applied a constant voltage. The capacitance adjustment wiring and the constant voltage wiring are positioned proximately and form a predetermined line capacitance, and this line capacitance is used to adjust a wiring capacitance of the target wiring for capacitance adjustment. The constant voltage wiring may utilize power supply voltage wiring or earthed voltage wiring, for example. Furthermore, the shape of the capacitance adjustment wiring and the constant voltage wiring may incorporate bent sections, or be formed in a shape resembling the teeth of a comb. 
     Compared with the conventional technology where a capacitance adjustment section utilizes gate capacitance, a capacitance adjustment section of a first semiconductor device according to the present invention uses a proximately positioned capacitance adjustment wiring and a constant voltage wiring to generate a line capacitance. Furthermore, the capacitance adjustment wiring and the constant voltage wiring is not simply disposed in straight lines, but rather incorporates bends and shapes resembling the teeth of a comb so that the two lengths of wiring intermesh. Consequently, if the facing surface area of the two lengths of wiring is increased, then a predetermined capacitance value can be achieved within a limited occupation area. Furthermore, the size of the added capacitance can be adjusted freely by increasing or decreasing the facing surface area of the two lengths of wiring. 
     As a result, the present invention enables the provision of a highly reliable semiconductor device in which errors resulting from signal timing deviations between pins during the operations of reading and writing data will not occur. 
     The capacitance adjustment section should preferably be formed from wiring provided in the uppermost layer of a multilayer interconnection structure. Such a construction enables the capacitance value to be adjusted by changing only the mask pattern of the uppermost wiring layer, with no modification of mask patterns of any of the lower layers being required. Consequently, the amount of time and effort required for mask design changes associated with adjustment of the wiring capacitance can be reduced. 
     In addition, in the case where the capacitance adjustment section is formed from wiring in the uppermost layer, the capacitance adjustment section can be layered on top of any elements or wiring constructed in layers other than the uppermost layer. Such a construction means separate space is not required for the capacitance adjustment section, and so the surface area occupied by the capacitance adjustment section can be reduced, contributing to a reduction in the surface area of the chip. 
     The wiring which is the object of the wiring capacitance adjustment process, termed the “target wiring for capacitance adjustment” in the case of the present invention, may be an input signal line, or a clock signal line within a circuit. 
     A second semiconductor device according to the present invention also comprises a capacitance adjustment section for adjusting wiring capacitance, and the capacitance adjustment section further comprises an input pad formed from two conductive layers separated by an insulation layer. The two conductive layers form an interlayer capacitance, and this interlayer capacitance is used to adjust the wiring capacitance of input signal wiring. One specific method using this capacitance adjustment section for carrying out capacitance adjustment, comprises dividing at least one of the conductive layers which make up the capacitance adjustment section into a plurality of regions, and then adjusting the interlayer capacitance by either short circuiting or not short circuiting the two conductive layers for each of the plurality of divided regions. 
     Hence the capacitance adjustment section of the second semiconductor device according to the present invention generates an interlayer capacitance using the two conductive layers which form the input pads. Typically, the surface area of an input pad, and the thickness of an interlayer insulation layer are predetermined values, and so the value of the interlayer capacitance generated by the two conductive layers will also be a constant. Therefore the conductive layers which form an input pad are divided into a plurality of regions, and then for each of the plurality of divided regions, either a contact is formed between the two conductive layers to create a short circuit between the two layers so that that particular divided region will not generate a capacitance, or alternatively contact between the two layers is prevented so that no short circuit exists thereby ensuring that that particular divided region will form an interlayer capacitance. Consequently, by either increasing or decreasing the number of divided regions of the two conductive layers which are short circuited, the overall value of the interlayer capacitance for the input pad can be freely adjusted. 
     This method utilizes the input pads, which occupy a considerable surface area, as a capacitance adjustment section, and because additional space is not required for providing a capacitance adjustment section, this method is extremely effective, particularly in terms of reducing the surface area occupied by the capacitance adjustment section. In addition, the method also offers the advantage of enabling large capacitance adjustments. Furthermore, by dividing the conductive layer into small regions, small incremental capacitance adjustments are possible. 
     Moreover if possible, a conventional capacitance adjustment section utilizing gate capacitance may be replaced entirely with a capacitance adjustment section of the aforementioned first or second semiconductor devices according to the present invention, although the present invention is not limited to this situation, and appropriate combinations of conventional capacitance adjustment sections and capacitance adjustment sections of the first or second semiconductor devices according to the present invention are also possible. For example, following the generation of a certain capacitance using a conventional capacitance adjustment section, a capacitance adjustment section of the present invention could then be used for conducting fine adjustments to the wiring capacitance. So doing would enable both capacitance adjustment sections to work in cooperation in adjusting a wiring capacitance. 
    
    
     BRIEF DESCRIPTION OF THE DRAWINGS 
     FIG. 1 is a plan view showing a capacitance adjustment section of a DRAM according to a first embodiment of the present invention. 
     FIG. 2 is a plan view showing a sample variation of the above capacitance adjustment section. 
     FIG. 3 is a plan view showing a capacitance adjustment section of a DRAM according to a second embodiment of the present invention. 
     FIG. 4 is a plan view showing a capacitance adjustment section of a DRAM according to a third embodiment of the present invention. 
     FIG. 5 is a cross-sectional view along the line A—A of FIG.  4 . 
     FIG. 6 is a diagram showing an example of a packaged DRAM, in particular an example of a CSP. 
     FIG. 7 is a schematic diagram showing a sample of the construction of a circuit block from a DRAM chip. 
     FIG. 8 is a bottom view of the above DRAM. 
     FIG. 9 is a plan view showing an example of a capacitance adjustment section of a DRAM according to conventional technology. 
    
    
     DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS 
     As follows is a description of embodiments of the present invention, with reference to the drawings. However, the present invention is not limited by the following embodiments, and many variations and practical applications are possible. 
     First Embodiment 
     As follows is a description of a first embodiment of the present invention with reference to the drawings. 
     FIG. 1 is a diagram showing a DRAM (semiconductor device) of this first embodiment, showing in particular the construction of a capacitance adjustment section which is a feature of the present invention. The wiring of the DRAM of the embodiment is constructed of double layer aluminum wiring. 
     According to the present embodiment, wiring which is the object of the wiring capacitance adjustment process (the target wiring for capacitance adjustment), is an input signal line  2  connected to an input pad  1 . The input signal line  2  is formed of a second aluminum wiring. As can be seen from FIG. 1, in the present embodiment, a conventional capacitance adjustment section (hereafter referred to as the first capacitance adjustment section  3 ) is used as a capacitance adjustment section. That is, a first capacitance adjustment section  3  constructed using gate capacitance is provided, and four gate electrodes  4   a,    4   b,    4   c,    4   d  formed on top of a diffusion layer  5  are each connected to a first aluminum wiring  7  via a through hole  6 . Each of the sections of the first aluminum wiring  7  are connected to a second aluminum wiring  9  via another through hole  8 , and the second aluminum wiring  9  is then connected to the input signal line  2 . The capacitance value of each gate capacitance is set to, for example, 10fF, 20fF, 30fF, and 40fF respectively, and by suitable combinations of the four different gate capacitance values, capacitance additions of between 10fF and 100fF, in increments of 10fF, are possible. In this particular case, all of the gate capacitances are connected to the input signal line  2 , resulting in a capacitance totaling 100fF being added. 
     Moreover in the present embodiment, in addition to the first capacitance adjustment section  3 , another capacitance adjustment section characteristic of the present invention (hereafter referred to as the second capacitance adjustment section  10 ) is also used for adjustments in the wiring capacitance. The construction of the second capacitance adjustment section  10  comprises capacitance adjustment wiring  11  with four bent portions  11   a  which branches off from a point partway along the input signal line  2 . The capacitance adjustment wiring  11  is also formed of the second aluminum wiring, in the same manner as the input signal line  2 . In contrast, ground wiring  12  (constant voltage wiring, hereafter referred to as GND wiring) which is branched off from a main ground wiring (not shown in the figure) passing through the chip, is formed in a shape resembling the teeth of a comb so as to intermesh with the bent shape of the capacitance adjustment wiring  11 . The GND wiring  12  is also formed from the second aluminum wiring, in the same manner as the capacitance adjustment wiring  11 . The capacitance adjustment wiring  11  and the GND wiring  12  face one another in a proximate arrangement, forming a line capacitance of the order of several hundred fF. The second capacitance adjustment section  10  for adjusting the wiring capacitance of the input signal line  2  is constructed from this line capacitance. In FIG. 1, for the sake of clarity, hatching has been used to indicate the capacitance adjustment wiring  11  and the GND wiring  12 . 
     According to a DRAM of the present embodiment, which is equipped with the first and second capacitance adjustment sections  3  and  10  respectively, described above, matching the input signal line wiring capacitance between pins is carried out by assembling the semiconductor chip into a packaged state, and following measurement and evaluation of the electrical characteristics of the package, using the evaluation results, and the first and second capacitance adjustment sections  3  and  10  to add capacitance as required to match the largest observed wiring capacitance. That is, because a DRAM of the present embodiment is equipped with the first and second capacitance adjustment sections  3  and  10  respectively, when adjustments of the wiring capacitance of an input signal line  2  are carried out, both capacitance adjustment sections  3  and  10  can be utilized and the wiring capacitance adjusted as required. For example, in the case where the maximum capacitance possible from the first capacitance adjustment section  3  of 100fF is added to a wiring capacitance and the capacitance is still insufficient, the second capacitance adjustment section  10  can then be used. In such a case, by adjusting, as appropriate, the length of the capacitance adjustment wiring  11  and the GND wiring  12  and thereby altering the facing surface area of the two lengths of wiring  11  and  12 , the capacitance value to be added can be finely adjusted. 
     In a DRAM according to the first embodiment, because the second capacitance adjustment section  10  is constructed of bent capacitance adjustment wiring  11  and GND wiring  12  which is shaped resembling the teeth of a comb, the desired wiring capacitance can be realized with a high degree of precision, without the requirement for a large occupation area for the capacitance adjustment section. In the first capacitance adjustment section  3 , the second aluminum wiring determines whether or not each of the gate capacitances is connected to the input signal line  2 , and the second aluminum wiring is also used to adjust the length of the capacitance adjustment wiring  11  and the GND wiring  12  in the second capacitance adjustment section  10 . Consequently, the second aluminum wiring pattern is the only mask pattern which need be altered in adjusting the wiring capacitance, and there is no requirement to alter any mask patterns at lower level layers. As a result, the time and effort required for mask design changes associated with the adjustment of wiring capacitance is able to be reduced. 
     According to this first embodiment, the second capacitance adjustment section  10  is constructed of the capacitance adjustment wiring  11  comprising four bent portions  11   a,  and the GND wiring  12  in a shape resembling the teeth of a comb, but the actual shape of the capacitance adjustment wiring and the GND wiring is not limited to these shapes, and many design changes are possible. For example a second capacitance adjustment section  16  is possible in which, as is shown in FIG. 2, both capacitance adjustment wiring  14  and GND wiring  15  is formed in a shape resembling the teeth of a comb, with the respective teeth then intermeshing. In such a case, the wiring capacitance value is able to be adjusted freely, in the same manner as that described for FIG.  1 . 
     Second Embodiment 
     As follows is a description of a second embodiment of the present invention with reference to the drawings. 
     FIG. 3 is a diagram showing a DRAM (semiconductor device) of this second embodiment, showing in particular the construction of a capacitance adjustment section which is a feature of the present invention. 
     The first embodiment showed an example in which a combination of a first capacitance adjustment section  3  based on conventional technology and a second capacitance adjustment section  10  characteristic of the present invention were used for adjusting the wiring capacitance of an input signal line  2 , whereas in the second embodiment a first capacitance adjustment section  3  is not used, and adjustments of wiring capacitance are conducted via only a second capacitance adjustment section  10 . Hence in FIG. 3, the construction of the second capacitance adjustment section  10  comprising capacitance adjustment wiring  11  and GND wiring  12  is identical with that described for the first embodiment (and those elements which are the same as those of FIG. 1 are labeled with the same numerals), but the four gate capacitances comprising the first capacitance adjustment section  3  are not connected to the input signal line  2 . 
     The DRAM of this embodiment then, shows an example in which all the capacitance added during adjustments of wiring capacitance, is provided by the second capacitance adjustment section  10 . This embodiment offers the same effects as those observed for the first embodiment, in that a desired wiring capacitance can be realized with a high degree of precision without the requirement for a large occupation area for the capacitance adjustment section, and furthermore the time and effort required for mask design changes associated with the adjustment of wiring capacitance is able to be reduced. 
     Moreover, in the first and second embodiments, the first capacitance adjustment section  3  and the second capacitance adjustment section  10  are provided at separate locations. However, because the first capacitance adjustment section  3  is formed from the gate capacitances and the second capacitance adjustment section  10  is formed from only the second aluminum wiring, it is also possible to layer the second capacitance adjustment section  10  on top of the first capacitance adjustment section  3 . Particularly in the case of the second embodiment, because the first capacitance adjustment section  3  is not used, no second aluminum wiring at all exists above the first capacitance adjustment section  3 , and so the capacitance adjustment wiring  11  and the GND wiring  12  which make up the second capacitance adjustment section  10  can be configured freely, as required. Alternatively, if there is another region in which no second aluminum wiring exists, then the second capacitance adjustment section  10  may also be formed thereon. By using this type of construction, an additional reduction can be made in the surface area occupied by the capacitance adjustment section, enabling a further contribution to be made to reducing the overall surface area of the chip. 
     Moreover, in the first and second embodiments, examples are shown in which the second capacitance adjustment section  10  is constructed from the capacitance adjustment wiring  11  and the GND wiring  12 , but the capacitance adjustment section may also be constructed from capacitance adjustment wiring and power supply voltage wiring (VDD wiring). In such a case, the same effects as those described for the above embodiments can be achieved. GND wiring or VDD wiring can be readily utilized as the constant voltage wiring for the capacitance adjustment section of the present invention, but if other wiring which has a continuous constant voltage applied thereto is available in a suitable location, then such wiring could also be utilized. 
     Third Embodiment 
     As follows is a description of a third embodiment of the present invention with reference to the drawings. 
     FIG. 4 is a diagram showing a DRAM (semiconductor device) of this third embodiment, showing in particular the construction of a capacitance adjustment section which is a feature of the present invention. Furthermore, FIG. 5 is a cross-sectional view along the line A—A of FIG.  4 . The wiring structure of the DRAM of this embodiment is a double layer aluminum wiring construction, as was the case for the first and second embodiments. 
     As shown in FIG. 5, in a capacitance adjustment section  18  of a DRAM according to this third embodiment, an input pad  19  comprising a first aluminum layer  20  (conductive layer) and a second aluminum layer  21  (conductive layer) separated by an interlayer insulation film  22  forms an interlayer capacitance, and this interlayer capacitance is used for adjusting the wiring capacitance of an input signal line  23 . The capacitance adjustment section  18 , as shown in FIG.  4  and FIG. 5, has a first aluminum layer  20  which is divided into a plurality (4 columns and 4 rows, totaling 16 regions in this embodiment) of regions  24   a  and  24   b.  Of the divided regions  24   a  and  24   b,  for the first, second and third columns from the left of the second, third and fourth rows from the top as shown in FIG. 4, that is, for a total of nine divided regions  24   a,  a plurality (nine in the case of this embodiment) of contacts  25 , which penetrate the interlayer insulation film  22  and short circuit the first aluminum layer  20  and the second aluminum layer  21 , are provided on each divided region  24   a,  as shown in FIG.  5 . Furthermore, in the case of the seven divided regions  24   b  of the uppermost row and right hand most column as shown in FIG. 4, no contacts  25  are provided, and the first aluminum layer  20  and the second aluminum layer  21  are not short circuited. 
     According to the capacitance adjustment section  18  of the present embodiment, because the first aluminum layer  20  of the input pad  19  is divided into a plurality of regions  24   a  and  24   b,  and is furthermore separated into the regions  24   a  for which contacts  25  are formed and the regions  24   b  for which no contacts  25  are formed, the two aluminum layers  20  and  21  are short circuited for those regions  24   a  in which contacts  25  are formed, meaning those divided regions  24   a  will not generate a capacitance, whereas in contrast, the two aluminum layers  20 ,  21  are not short circuited for those regions  24   b  without contacts  25 , meaning those divided regions  24   b  will generate a capacitance. As a result, in the case of the third embodiment, a capacitance equivalent to seven times the interlayer capacitance obtained from a single divided region  24   b  is able to be added to a wiring capacitance, where the capacitance obtained from a single divided region  24   b  is determined by the surface area of the divided region  24   b  and the thickness of the interlayer insulation film  22 . Consequently, by increasing or decreasing the number of divided regions  24   b  for which the two aluminum layers  20  and  21  are not short circuited, the value of the overall interlayer capacitance for the entire pad can be adjusted, enabling alterations in the size of the adjustment made to the wiring capacitance. 
     The capacitance adjustment section  18  of the third embodiment aims to use the relatively large surface area occupied by the input pad  19  as the capacitance adjustment section, and because additional space is not required for the capacitance adjustment section, this method is particularly effective in terms of reducing the surface area occupied by the capacitance adjustment section. Moreover, this embodiment offers the additional advantage that, because the surface area of the input pad  19  itself is quite large, the size of the capacitance adjustment possible is also large. Furthermore, by dividing the first aluminum layer  20  up into even smaller regions, even finer incremental capacitance adjustments are possible. 
     The technical scope of the present invention is not limited to the working examples described above and includes various other modifications which retain the gist of the present invention. For example, in the first and second embodiments, the case was described for an input signal line as the target wiring for capacitance adjustment, but applicable targets for a capacitance adjustment section of the present invention are not limited to input signal lines, and other lines such as a clock signal line within a circuit could also be targeted. Moreover, the objective of the present invention need not be limited to matching the timing of a signal across a plurality of pins, and a capacitance adjustment section of the present invention could also be used for adding capacitance to certain wiring within a circuit in the case where the timing for that wiring is to be intentionally delayed. Furthermore, suitable combinations of conventional capacitance adjustment sections, capacitance adjustment sections utilizing line capacitance such as the first and second embodiments, and capacitance adjustment sections utilizing the interlayer capacitance of an input pad section such as the third embodiment are also possible. 
     Appropriate alterations of the actual construction of the capacitance adjustment sections shown in the above embodiments, such as alterations in the number of bent portions or the number of teeth comprising the shape resembling the teeth of a comb for the capacitance adjustment wiring or the GND wiring, or alterations in the number of divided sections within the input pad section, are of course possible. Furthermore, the scope of the present invention is not limited to DRAM chips of double layer wiring construction, and may be applied to a variety of semiconductor devices of multilayer interconnection construction.
A semiconductor device is provided comprising a capacitance adjustment section which enables the free setting of the amount of adjustment of a wiring capacitance, and for which the adjustment operation can be carried out simply. The semiconductor device comprises a capacitance adjustment section which is provided with a capacitance adjustment wiring which is connected to a target wiring for capacitance adjustment for adjusting wiring capacitance, and a constant voltage wiring which is formed on the same layer as the capacitance adjustment wiring and to which is applied a constant voltage. The capacitance adjustment wiring and the constant voltage wiring are positioned proximately and form a predetermined line capacitance, and this line capacitance is used to adjust a wiring capacitance of the target wiring for capacitance adjustment.