BACKGROUND OF THE INVENTION 
     It is known to combine different functional blocks on a single IC chip for density and cost advantages. However, improvements in circuit density may cause the parasitic resistance and capacitance of the device to increase. Memory and logic components are generally formed using different process technologies to enhance the performance of each individual component. Therefore, to effectively integrate distinct functional blocks, the overall manufacturing process must be modified without introducing significant complexity. 
     Several processes for incorporating a metal-insulator-metal (MIM) capacitor into an embedded DRAM (eDRAM) system are known. Typically, a MIM capacitor is inserted between the silicon substrate and the first metal layer. This configuration is usually preferred because it offers smaller memory cells than designs having a MIM capacitor over the first metal layer. However, this type of fabrication results in an elongated contact between the first metal layer and substrate. As a result, taller contacts or vias increase the resistance (R) for a specific contact as well as the parasitic capacitance (C) between contact pairs. With the continued scaling of integrated circuits, routing wires are more closely packed leading to an increase in the parasitic capacitance (C) between the interconnect metal and adjacent metal layers. Scaling also reduces the dimensions of the routing wires leading to an increase in the interconnect resistance (R). Consequently, scaling and current fabrication processes increase the interconnect RC, which contributes to slower logic speeds. Therefore, current eDRAM processes are unsuitable for fabricating a high-performance SoC (system on a chip). Similarly, increased via resistance and capacitance reduce speeds in eDRAM systems having MIM capacitors between two metal layers. Therefore, a need exists for an improved process for manufacturing eDRAM systems that contain a MIM capacitor. 
     FIELD OF THE INVENTION 
     The present invention relates to a semiconductor structure that contains a DRAM embedded in a logic device, and the method for forming such a structure. 
     The present invention further relates to a DRAM system that is fabricated by slightly modifying a conventional logic process. The DRAM system of the invention provides for interconnects having reduced parasitic resistance and capacitance. 
     SUMMARY OF INVENTION 
     An improved method for fabricating an embedded DRAM system with a MIM capacitor is achieved. The DRAM system of the invention has an embedded memory and a logic circuit on the same substrate. 
     In a particular embodiment, the invention concerns a semiconductor structure having reduced parasitic resistivity. The structure includes a semiconductor substrate that is divided into a memory region and a logic region, wherein the first metal layer is present only in the logic region. 
     A first dielectric layer, containing a MIM capacitor, is disposed over the DRAM region. The first dielectric layer is also present in the logic region. This first dielectric layer functions as an interlevel dielectric layer in the logic region to enable the two metal layers to electrically connect through a via filled with a conductive material. The same metal layer present in both the DRAM region (as a first metal layer M 1 ), and the logic region (as a second metal layer M 2 ) is coupled to the underlying substrate. A coupling via present in only the memory region electrically couples the MIM capacitor to the metal layer immediately adjacent to the coupling via. 
     The invention is also directed to a method for forming an embedded DRAM system that includes DRAM cells and logic transistors on a single substrate, where the contacts are formed from different conductive material. The use of two different types of plugs reduces the overall interconnect resistance, and improves system level performance by enhancing the speed and power features of the invention. 
    
    
     
       BRIEF DESCRIPTION OF THE DRAWINGS 
         FIGS. 1A-1C  illustrate cross sectional views of a process flow for forming an embedded DRAM system having a MIM capacitor in accordance with a first embodiment of the invention; 
         FIGS. 2A-2D  illustrate cross sectional views of a process flow for forming an embedded DRAM system having a MIM capacitor in accordance with a second embodiment of the invention; and 
         FIGS. 3A-3D  illustrate cross sectional views of a process flow for forming an embedded DRAM system having a MIM capacitor and two different plugs in accordance with a third embodiment of the invention. 
     
    
    
     DETAILED DESCRIPTION 
     The present invention provides several methods for fabricating an embedded DRAM having an improved interconnect resistance. As devices scale downward in geometry, the interconnect resistance of the device increases. This invention reduces the interconnect resistance through the processes of  FIGS. 1A-1C  and  FIGS. 3A-3D . 
     The invention will be more readily understood in reference to  FIGS. 1A-1C . A portion of a semiconductor structure is shown in  FIG. 1A . Specifically,  FIG. 1A  illustrates a doped substrate  110  upon which an insulating layer  75  is formed. A gate  15  is formed on the substrate in accordance with well known techniques. Substrate  110  is provided with source/drain regions  111 A and  111 B in the memory area, and with source/drain regions  112 A and  112 B in the logic area. The structure of  FIG. 1A  also includes a set of contacts  20 A/ 20 B and a first dielectric layer  80 . Dielectric layer  80  preferably has a thickness of between about 5000 and 100,000 angstroms. Portions of dielectric layer  80  and layer  77  are etched to form an opening having a lower surface contiguous with dielectric layer  75  and contact  20 B. Within the opening, a lower capacitor plate is deposited that is contiguous with contact  20 B. Upon this capacitor plate is provided an insulating layer, and then an upper capacitor plate is deposited on the insulating layer. Suitable materials for the capacitor plates may be TiN, Ta, or TaN. The resulting stack is then masked and etched in a conventional manner to form MIM capacitor  50 . 
     The interior of capacitor  50  is shown as cavity  72  in  FIG. 1A . A dielectric layer  82  is disposed to fill cavity  72  of capacitor  50 , thereby increasing the thickness of layer  80  by an amount T 1 . The thicker dielectric layer is shown as layer  82  in  FIG. 1B . T 1  may have a thickness ranging from 2000-7000 angstroms. In other embodiments, T 1  may be formed by disposing a much thicker layer, thicker than layer  80 , and then polishing the structure to the desired thickness level. After dielectric layer  82  is formed, a mask (not shown) is disposed over the partially completed structure and dielectric layer  82  is selectively etched to form via  22 . Via  22  is preferably filled with conductive material such as tungsten to form the structure of  FIG. 1B . By separately forming conductive plug  22 , the present invention reduces the interconnect resistance of the eDRAM memory systems. 
     A dual damascene process may be used to form vias  18 A,  18 B and  18 C, and metallization region M 1  after plug  22 . This is achieved by providing etch stop layer  90  and dielectric layer  84  over the entire structure as shown in  FIG. 1C . Then, grooves for M 1  are formed in layer  84  down to the depth of layer  90 . In addition, via holes  18 A,  18 B and  18 C are formed in layer  82  down to the depth of layer  77 . 
     An alternative embodiment of the present invention is shown in  FIGS. 2A-2D , in which an eDRAM system with copper-filled vias is formed. Similar elements in  FIG. 2A-2D  and  FIGS. 1A-1C  are labeled with similar reference numbers. A partially completed semiconductor structure is shown in FIG.  2 A, where a set of contacts  20 A,  20 B are provided in insulating layer  75 , and the substrate  110  has source/drain regions  111 A,  111 B,  112 A and  112 B. Grooves  45  for M 1  regions are shown in only the logic area of the structure, because M 1  regions are absent from the memory area. The M 1  regions are usually fabricated to have a thickness of between 2000 to 7000 angstroms. Etch stop layer  77  is also shown in  FIG. 2A  covering insulating layer  75  and contacts  20 A/ 20 B. Turning to  FIG. 2B , a dielectric layer  65  is disposed above etch stop layer  77 , and later etched to form grooves  45 . Next, metal layer M 1  is deposited in the grooves to complete metal lines in the logic area. Then, a second etch stop layer  68  is provided above dielectric layer  65  and metal lines  70  as shown in  FIG. 2B . 
     The process continues in  FIG. 2C , where a mask (not shown) is provided over the logic area to remove both etch stop layer  68  (and optionally dielectric layer  65 ) from the memory area. Removal of layer  68  from only the DRAM area allows direct connection between contact  20 A and the later formed via  18 A. Subsequently, a first dielectric layer  80  is disposed on layer  65  (or  77 ) in the memory area and layer  68  in the logic area. A portion of layers  80  (layer  65  is also removed if it was not removed in the prior etch step) and  77  are then removed, followed by the deposit of a first capacitor plate  42 . Upon capacitor plate  42 , an insulating layer  44  is disposed. Then capacitor plate  48  is provided on layer  44 . The resulting stack of layers  42 ,  44  and  48  is masked and etched to complete the formation of MIM capacitor  50 . Next, a second dielectric layer  82  is provided above dielectric layer  80  to fill the cavity  72  of capacitor  50 , and to increase the thickness of dielectric layer  80 . In  FIG. 2D  an etch stop layer  78  is provided over dielectric layer  82 , which in turn is covered by a third dielectric layer  88 . Then, layer  88  is patterned to create grooves (not shown) for metallization region M 2 . A mask (not shown) is placed on dielectric layer  88  and patterned to simultaneously form vias  18 A,  18 B,  18 C and  22 . 
       FIG. 2D  illustrates the result of performing a conventional dual damascene process to fill grooves  45  and vias  18 A,  18 B and  18 C with copper. Preferably, the M 2  region is formed to have an equivalent thickness as the M 1  region in order to maintain the small size of the conventional MIM cell. However, due to the absence of the metal 1 layer (M 1 ) in the memory area, via  18 A in the memory area must be etched to a depth of 2000-7000 angstroms greater than the depth of vias  18 B and  18 C in the logic area. Layers  77  and  68  serve as etch-stop layers for the via etch in the DRAM and logic regions, respectively. The present invention reduces the contact height in the logic area by including a metal 1 layer in only the logic portion of the system. As a result, the RC in the logic area is also reduced. This process leads to the contact resistance and capacitance of the eDRAM system being maintained at the values expected for a pure logic process. In other words, the vertical contact in the logic area does not require a process change in the present invention. Moreover, the absence of M 1  regions in the memory area produces a smaller cell size and an eDRAM system having an RC in the logic area equivalent to the RC of a logic device without memory. 
     An alternative embodiment for reducing the interconnect RC of the invention is shown in  FIGS. 3A-3D , in which an eDRAM system having two different types of conductive plugs is shown. This embodiment is directed to an eDRAM system in which the copper via is not allowed to directly touch the MIM electrode. 
     The MIM capacitor of  FIG. 3A  is fabricated according to the process described for  FIGS. 2A-2C . Then a dielectric layer  82  is deposited above dielectric layer  80  to fill the cavity of capacitor  50 , and to increase the thickness of dielectric layer  80 . A mask (not shown) is disposed over dielectric layer  82  to selectively etch via  22 . Via  22  is preferably filled with tungsten. As shown in  FIG. 3B , via  22  is connected to capacitor  50 . Then mask  52  is placed over via  22  and dielectric layer  82  as shown in  FIG. 3C  to define the areas where vias  18 A,  18 B and  18 C will be created. Vias  18 A,  18 B and  18 C are electrically coupled to contacts  20  that are contained within insulating layer  75 . Mask  52  is removed after vias  18 A,  18 B and  18 C are formed. Then, the vias are filled with a conductive material having a lower resistance than tungsten. In a dual damascene process, the vias may be etched after forming M 2  grooves in layer  88 . 
     To provide for a controlled etch in the future process steps, an etch stop layer  78  is provided on vias  18 A,  188  and  18 C and  22 . Dielectric layer  88  is then provided over layer  78 , and, subsequently patterned to form grooves for the second metallization regions (M 2 ). Then, grooves  54  are filled with a conductive material having a lower resistance value than tungsten. Preferably, vias  18  and grooves  54  are filled with copper or a copper alloy. A passivation layer is provided over the upper surface of dielectric layer  88  and M 2  regions to complete the structure that is shown in  FIG. 3D . The resulting structure has both a reduced interconnect resistance and a reduced capacitance compared to other embedded DRAM systems. Additional metal layers may be provided, if desired, between M 2  and passivation layer to form a more complex interconnect. 
     The present invention has been described by the examples above. However, these embodiments are illustrative only and are not intended to limit the invention in any way. For example, the logic structures shown need not be repeated in every logic area. Some logic structures within an IC device can have fewer or more vias than shown depending on whether a higher level metal is necessary for the interconnect. Although the present invention has been described as an eDRAM having a MIM capacitor inserted between the substrate and the first metal layer, the process of the present invention is also applicable to inserting the MIM capacitor between two metal layers in a memory region. The implementation of the described process could be easily adapted by the skilled artisan for incorporating the MIM capacitor, coupling vias and metal layers into a system where a capacitor is desired between two metal layers instead of between a metal layer and a substrate. The skilled artisan would readily appreciate that the aforementioned embodiments are capable of various modifications. Thus, the invention is defined by the claims set forth below.
An embedded memory system includes an array of random access memory (RAM) cells, on the same substrate as an array of logic transistors. Each RAM cell includes an access transistor and a capacitor structure. The capacitor structure is fabricated by forming a metal-insulator-metal capacitor in a dielectric layer. The embedded RAM system includes fewer metal layers in the memory region than in the logic region.