CROSS-REFERENCE TO RELATED APPLICATIONS 
       [0001]    This application claims priority from U.S. Provisional Application Ser. No. 62/094,484, filed Dec. 19, 2014, which is hereby incorporated by reference in its entirety. 
     
    
     BACKGROUND 
       [0002]    1. Field 
         [0003]    Embodiments described herein generally relate to a component for use in a chemical mechanical polishing tool, wherein the component includes a hydrophobic layer disposed on a surface of the component. 
         [0004]    2. Description of Related Art 
         [0005]    The present disclosure relates generally to chemical mechanical polishing of substrates, and more particularly to components of a chemical mechanical polishing apparatus. 
         [0006]    Integrated circuits are typically formed on substrates, such as silicon wafers, by sequential deposition of conductive, semiconductive, or insulative layers. After each layer is deposited, the layer is etched to create circuitry features. As a series of layers are sequentially deposited and etched, the outer or uppermost surface of the substrate, i.e., the exposed surface of the substrate, becomes increasingly non-planar. This non-planar outer surface presents a problem for the integrated circuit manufacturer. Therefore, there is a need to periodically planarize the substrate surface to provide a flat surface. 
         [0007]    Chemical mechanical polishing (CMP) is one accepted method of planarization. CMP typically includes the substrate mounted on a carrier or polishing head. The exposed surface of the substrate is then placed against a rotating polishing pad. The carrier head provides a controllable load, i.e., pressure, on the substrate to push the substrate against the polishing pad. In addition, the carrier head may rotate to provide additional motion between the substrate and polishing surface. 
         [0008]    A polishing slurry, including an abrasive and at least one chemically-reactive agent, may be supplied to the polishing pad to provide an abrasive chemical solution at the interface between the pad and the substrate. 
         [0009]    The polishing slurry may also contact and adhere to components of the CMP tool. Over time, the polishing slurry can rub over the surface of the components thereby dislodging component particles. Some of these particles may fall on to the polishing pad, which may result in scratching of the substrate. Scratches may result in substrate defects, which lead to performance degradation while polishing of the finished device. Additionally, the slurry particles may begin to erode the components of the CMP tool that are contacted by the slurry. Thus, the life spans of those parts are decreased, and the parts need to be replaced more readily. 
         [0010]    Therefore, there is a need for improved components for use in CMP tools. 
       SUMMARY 
       [0011]    In one embodiment, a component for a CMP tool is disclosed herein. The component includes a body having a surface that will be exposed to a polishing fluid when the CMP tool is polishing a substrate and a hydrophobic layer disposed on the surface of the body. The hydrophobic layer having a fluid contact angle of at least 90°. 
         [0012]    In another embodiment, a component for a CMP tool is disclosed herein. The component includes a ring shaped body and a hydrophobic layer. The ring shaped body is defined by a lower side and an upper side. The lower side includes a lower edge, an upper edge, an outer surface having an outer diameter, an inner surface having an inner diameter, and a first hydrophobic layer. The upper edge extends towards the upper side. The inner diameter is less than the outer diameter. The outer surface and the inner surface are concentric about a central axis. The first hydrophobic layer is disposed on the inner surface of the lower side. The first hydrophobic layer has a contact angle of at least 90° when a fluid contacts a portion of the inner surface of the lower side. The upper side includes a lower edge, an upper edge, and outer surface having an outer diameter, an inner surface having an inner diameter, and a second hydrophobic layer. The lower edge is integral with the upper edge of the lower side. The upper edge of the upper side extends radially inward from the inner edge of the upper surface in an upwards direction. The outer diameter of the upper side is less than the outer diameter of the lower side. The inner diameter of the upper side is less than the inner diameter of the lower side. The second hydrophobic layer has a contact angle of at least 90° when a fluid contacts a portion of the inner surface of the upper side. 
         [0013]    In yet another embodiment, a component in a CMP tool is disclosed herein. The component includes a disk shaped body and a hydrophobic layer deposited on the disk shaped body. The disk shaped body has a top surface, a bottom surface, an outer wall, an inner wall, and a ledge. The bottom surface is substantially parallel to the top surface. The outer wall is perpendicular to the bottom surface. The outer wall includes an outer diameter, a first end, and a second end. The first end of the outer wall is integral with the bottom surface. The second end is opposite the first end. The inner wall is perpendicular to the top surface. The inner wall includes an inner diameter, a first end, and a second end. The inner diameter is less than the outer diameter. The second end of the inner wall is integral with the top surface. The ledge is defined by the outer wall and the inner wall. The ledge is perpendicular to the outer wall and the inner wall. The ledge has a first end and a second end. The first end of the ledge is integral to the second end of the outer wall. The second end of the ledge is radially inward from the first end of the ledge. The second end of the ledge is integrally connected with the first end of the other wall. The second end of the outer wall is radially inward from the first end of the outer wall, towards the top surface. The hydrophobic layer has a contact angle of at least 90° when a fluid contacts a portion of disk shaped body. 
     
    
     
       BRIEF DESCRIPTION OF THE DRAWINGS 
         [0014]    So that the manner in which the above recited features of the present disclosure can be understood in detail, a more particular description of the disclosure, briefly summarized above, may be had by reference to embodiments, some of which are illustrated in the appended drawings. It is to be noted, however, that the appended drawings illustrate only typical embodiments of the disclosure and are therefore not to be considered limiting of its scope, for the disclosure may admit to other equality effective. 
           [0015]      FIG. 1  illustrates a top view of a chemical mechanical polishing (CMP) tool for polishing a substrate, according to one embodiment. 
           [0016]      FIG. 2A  illustrates a side view of a portion of a CMP tool component without a hydrophobic layer deposited thereon, according to one embodiment. 
           [0017]      FIG. 2B  illustrates a side view of a portion of a CMP tool component with a hydrophobic layer deposited thereon, according to one embodiment. 
           [0018]      FIG. 2C  illustrates a side view of a portion of a CMP tool component having a thicker hydrophobic layer than that deposited on the CMP tool component illustrated in  FIG. 2B , according to one embodiment. 
           [0019]      FIG. 3  illustrates a side view of a splash cover having a hydrophobic layer deposited thereon, according to one embodiment. 
           [0020]      FIG. 4  illustrates a side view of a carrier cover having a hydrophobic layer deposited thereon, according to one embodiment. 
           [0021]      FIG. 5  illustrates a side view of a polishing fluid delivery arm having a hydrophobic layer deposited thereon, according to one embodiment. 
           [0022]      FIG. 6  illustrates a side view of one embodiment of a portion of a polishing apparatus having a hydrophobic layer deposited thereon, according to one embodiment. 
           [0023]      FIG. 7  illustrates a side view of a pad conditioning arm of a CMP tool having a hydrophobic layer deposited thereon, according to one embodiment. 
       
    
    
       [0024]    To facilitate understanding, identical reference numerals have been used, where possible, to designate identical elements that are common to the figures. It is contemplated that elements disclosed in one embodiment may be beneficially utilized on other embodiments without specific recitation. 
       DETAILED DESCRIPTION 
       [0025]    Embodiments of the present disclosure are described herein in accordance with components of a CMP tool. 
         [0026]      FIG. 1  depicts a conventional chemical mechanical polishing (CMP) tool  100  for polishing a substrate (not shown). The CMP tool  100  may include a base  101 . The base  101  includes a carriage  102  and a plurality of stations  108 . The carriage  102  is centrally disposed on the base  101 . The carriage  102  may include a plurality of arms  110 , each supporting a polishing head  112 . The arms  110  extend from the carriage  102  out over each station  108 . The polishing heads  112  are generally supported above the stations  108 . The polishing heads  112  include a recess (not shown) configured to retain a substrate during polishing. The stations  108  may be, for example, a transfer station  113  or a polishing station  111 . Two arms  110  depicted in  FIG. 1  are shown in phantom such that the transfer station  113  and polishing station  111  of the first station  108  may be shown. The carriage  102  is indexable such that the polishing head  112  may be moved between the polishing station  111  and the transfer station  113 . 
         [0027]    Conditioning devices  134  may be disposed on the base  101  adjacent to each of the polishing stations  111 . The conditioning devices  134  may be used to periodically condition the polishing surface of the polishing stations  111  to maintain uniform polishing results. 
         [0028]    Each polishing station  111  has a fluid delivery arm  109 . The fluid delivery arm  109  delivers a polishing fluid to the polishing surface of the polishing station  111  so that a substrate may be polished. When the fluid is delivered to the polishing station  111 , the polishing fluid may come into contact with components of the CMP tool. If a slurry is used as the polishing fluid, the slurry particles adhere to the different components of the CMP tool. Over time, the polishing slurry can rub over the surface of a component thereby dislodging component particles. Some of these particles may fall onto the polishing surface, and potentially become a source of scratches on the substrate being polished. These scratches may result in poor device performance and high defects. Additionally, the slurry particles may begin to erode those components of the CMP tool. Thus, there is a need to limit the contact between the fluid and the components of the CMP tool such that erosion of the components is delayed and the life span is extended. 
         [0029]      FIGS. 2A-2C  compare CMP tool components with and without a hydrophobic layer applied to an exterior of the CMP tool component. 
         [0030]      FIG. 2A  illustrates a portion of a CMP tool component that does not have a hydrophobic layer on an exterior surface. The angle at which a fluid contacts the surface of the CMP tool component is referred to as the contact angle. The contact angle is determined by the resultant between adhesive and cohesive surfaces. When a fluid contacts the surface of the portion of the CMP tool component without a hydrophobic layer as illustrated in  FIG. 2A , the contact angle  206  between the fluid and the CMP tool component is about 60°. A surface which has a high degree of wetting and a contact angle less than 90° is referred to as a hydrophilic surface. The measure of wetting of a surface is inversely related to the contact angle. The low contact angle between the fluid and the CMP tool components illustrates that the CMP tool has a high degree of wetting. A high degree of wetting results in more slurry particles adhering to an exterior surface of the CMP tool component. More slurry contact with CMP tool component increases the likelihood of dislodging some surface particles from the CMP tool component. Such dislodged component particles will fall onto the polishing surface of the polishing station and scratch the substrate. 
         [0031]    The CMP tool components illustrated in  FIGS. 2B-2C  have a hydrophobic layer disposed an exterior surface of the component. The hydrophobic layer may be in the form of monomolecular layers (adsorbed orientated layers about one molecule thick) or lacquer films by treating a material with solutions, emulsions, or less frequently, vapors of hydrophobic agents, which are substances that interact weakly with water but attach themselves to a surface. The hydrophobic layer may be deposited on a CMP tool component using a plasma treatment performed in a plasma chamber. The plasma treatment utilizes a low-pressure plasma system, which is inexpensive and consumes minimal gas. In hydrophobic deposition process, monomers are introduced into the chamber and react chemically among each other to form polymers. These polymers then deposit as a hydrophobic layer onto the treated component. The monomers that are introduced into the chamber may be, for example, hexamethyldisiloxane, heptadecafluorodecyltrimethoxysilane, poly(tetrafluoroethylene), poly(propylene), octadecyldimethylchlorosilane, octadecyltrichlorosilane, tris(trimethylsiloxy)silylethyl-dimethylchlorosilane, octyldimethylchlorosilane, or dimethyldichlorosilane. 
         [0032]    The contact angle between the fluid and the surface may be measured using different techniques. For example, one technique includes placing a sample, in this case a component of a CMP tool, on a flat surface. A constant volume of water or slurry solution is then dispersed onto the component with a pipette. While the droplets are on the hydrophobic layer disposed on the exterior of the component, a picture is taken of the droplet disposed on the layer. The angle between the droplet and the surface may be measured to determine the contact angle. 
         [0033]    The contact angle of the hydrophobic layer may also be determined using a VCMA Optima analyser. The VCMA Optima analyser utilizes a precision camera and advanced PC technology to capture static or dynamic images of the droplet and determine tangent lines for the basis of contact angle measurement. A manual or automatic syringe may dispense the test liquid. Computerized measurement eliminates the human error element in measuring the contact angle. Dynamic images are able to be captured for time sensitive analysis. 
         [0034]    Referring back to  FIG. 2A ,  FIG. 2A  depicts a droplet  202  of fluid on a conventional CMP tool component  200 , which does not have a hydrophobic layer. The contact angle  206  of the droplet is about 60°. The low contact angle indicates a high degree of wetting of the surface of the component  200 , which may contribute to erosion of the component  200  over time. Thus, the life span of the CMP tool component  200  is undesirably short. 
         [0035]      FIG. 2B  depicts a CMP tool component  200  having a hydrophobic layer  204  disposed on the top surface of the component  200 . The hydrophobic layer  204  may be applied to the component  200  by plasma treatment or other suitable methods. A droplet  202  of fluid disposed on the hydrophobic layer  204  of the CMP tool component  200  has a contact angle  212 . The hydrophobic layer  204  has a higher contact angle  212  than that of the surface of the conventional CMP tool  100  that does not have the hydrophobic layer. The contact angle  212  formed between the droplet  202  and the hydrophobic layer  204  on the component  200  is at least 90°. The higher contact angle  212 , shown in  FIG. 2B , indicates substantially less wetting for the surface. Thus, rather than wetting the CMP tool component  200 , the droplet  202  easily rolls off the surface of the component  200 . Therefore, erosion of the component  200  will be substantially less, thus increasing the life of the component  200 . Additionally, if the polishing fluid is a slurry, the substantially less wetting results in less slurry particles adhering to the component  200 . Less slurry particles adhering to the component  200  reduces the likelihood of the slurry particles dislodging surface particles of CMP tool components and eventually falling onto the polishing stations. 
         [0036]      FIG. 2C  depicts a CMP tool component  200  having a thicker hydrophobic layer  208  compared to the hydrophobic layer  204  illustrated in  FIG. 2B . The thickness of the hydrophobic layer  208  may be controlled by the time the component  200  is exposed to the hydrophobic layer deposition process. The longer the CMP tool component  200  is exposed to the hydrophobic layer deposition process process, the thicker the hydrophobic layer  208 . The thickness of the hydrophobic layer may range from 400 nm to 1600 nm. As the thickness of the hydrophobic layer  208  increases, the contact angle formed between the hydrophobic layer and the fluid increases. As the contact angle increases, the degree of wetting decreases. Thus, the thicker the hydrophobic layer, the lower the degree of wetting for the surface on which the hydrophobic layer is formed. The thicker hydrophobic layer  208  has the contact angle  214  between the droplet  202  and the component  200  of about 140°. This results in a low degree of wetting. Thus rather than wetting the CMP tool component  200 , the droplet  202  easily rolls off the surface of the component  200 . Therefore, erosion of the component  200  will be substantially less, thus increasing the life of the component  200 . Additionally, if the polishing fluid is a slurry, the substantially less wetting results in less slurry particles adhering to the component  200 . Less slurry particles adhering to the components  200  reduces the likelihood of the slurry particles falling onto the polishing stations. 
         [0037]      FIG. 3  depicts a cross-sectional view of a portion of a CMP tool component in the form of a splash cover  302  of a CMP tool  300 . Only a polishing station  304  is illustrated in  FIG. 3 . The tool  300  is configured essentially the same as the tool  100  described in  FIG. 1 , except for one or more of the components of the tool  300  having a hydrophobic coating. The splash cover  302  circumscribes the polishing station  304 . The splash cover  302  is used to block the polishing fluid from spinning off of the polishing station  304  and coating other areas of the CMP tool  300 . The splash cover  302  includes a body  301  and a hydrophobic layer  324  disposed on the body  301 . The body  301  has an upper side  306  and a lower side  308 . The lower side  308  includes a lower edge  310 , an upper edge  312 , an outer surface  314 , and an inner surface  316 . The upper edge  312  is opposite the lower edge  310  and extends in an upward and inward direction towards the upper side  306 . The outer surface  314  has an outer diameter  318 . The inner surface  316  has an inner diameter  320 . The inner diameter  320  is less than the outer diameter  318 . The outer surface  314  and the inner surface  316  are concentric about a central axis. 
         [0038]    The upper side  306  includes a lower edge  340 , an upper edge  342 , an outer surface  344 , and an inner surface  346 . The upper edge  342  extends radially inward from the lower edge  340  of the upper side  306  in an upwards direction. The lower edge  340  of the upper side  306  is integral with the upper edge  312  of the lower side  308  to form a continuous splash cover  302 . The outer surface  344  has an outer diameter  348 . The outer diameter  348  of the upper side  306  is less than the outer diameter  318  of the lower side  308 . The inner surface  346  has an inner diameter  350 . The inner diameter  350  of the upper side  306  is less than both the inner diameter  320  of the lower side  308  and the outer diameter  348  of the upper side  306 . 
         [0039]    Beneath the splash cover  302  may be a trough  322 . The trough  322  collects the excess fluid or slurry that is directed downwards by the curvature of the splash cover  302 . 
         [0040]    The fluid that contacts the splash cover  302  may contain material removed from the substrate, material from the polishing surface, abrasive particles or chemical reagents, such as sodium hydroxide, or deionized water. The hydrophobic layer  324  deposited on the body  301  of the splash cover  302  prevents erosion and sticking particles. In one embodiment, the hydrophobic layer  324  may be placed on the inner surface  316  of the lower side  308  and the inner surface  346  of the upper side  306 . The hydrophobic layer  324  extends the life of the splash cover  302  by delaying erosion. The presence of the hydrophobic layers  324  results in substantially less wetting of the carrier splash cover  302 . Thus, rather than wetting the splash cover, the polishing fluid will easily roll off the surface the splash cover  302 . Therefore, erosion of the splash cover  302  will be substantially less, thus increasing the life of the splash cover  302 . Additionally, if the polishing fluid is a slurry, the substantially less wetting results in less slurry particles adhering to the splash cover  302 . Less slurry particles adhering to the splash cover  302  reduces the likelihood of the slurry particles dislodging the particles from the surface of the splash cover and falling onto the polishing stations. 
         [0041]      FIG. 4  depicts a cross sectional view of one embodiment of a CMP tool component in the form of a carrier head assembly  400 . The carrier head assembly  400  includes a carrier head  401 , a retaining ring  426 , a carrier cover  403 , and a membrane  409 . The carrier head  401  includes a body  411 . The body  411  has an exposed upper surface  402 , a bottom surface  404 , an inner wall  406 , and an outer wall  408 . The upper surface  402  is substantially parallel to the bottom surface  404 . The inner wall  406  further includes a first end  436 , a second end  446 , and an inner diameter  410 . The outer wall  408  further includes a first end  438 , a second end  448 , and an outer diameter  412 . The outer diameter  412  is larger than the inner diameter  410 . A ledge  414  is formed in the carrier cover  403  by the inner diameter  410  and the outer diameter  412 . The ledge  414  is substantially parallel to both the upper surface  402  and the bottom surface  404 . The ledge  414  may be at a 90° angle with respect to the outer diameter  412 . The membrane  409  is disposed beneath the bottom surface of the carrier head  401  and is circumscribed by the retaining ring  426 . The membrane  409  provides a mounting surface for a substrate (not shown), when the carrier head  401  picks up a substrate to move the substrate among the stations (not shown). 
         [0042]    The carrier cover  403  includes a body  413  and a hydrophobic layer  425  disposed on the body  413 . The body  413  is configured to fit over the carrier head such that the exposed upper surface  402 , ledge  414 , walls  406 ,  408 , are covered. The carrier cover  403  is exposed to the polish fluid during polishing. The polishing fluid that is delivered to the polishing station may contact the carrier cover  403  and/or the carrier head  401 . The polishing fluid may be a slurry that contains abrasive particles or chemical reagents, such as sodium hydroxide, or may be deionized water. The hydrophobic layer  425  extends the life of these components by delaying erosion. The presence of the hydrophobic layer  425  results in substantially less wetting of the carrier head  401  and carrier cover  403 . Thus, rather than wetting the carrier head  401  and carrier cover  403 , the polishing fluid will easily roll off the surface the carrier head  401  and carrier cover  403 . Therefore, erosion of the carrier head  401  and the carrier cover  403  will be substantially less, thus increasing the lives of the carrier head  401  and the carrier cover  403 . Additionally, if the polishing fluid is a slurry, the substantially less wetting results in less slurry particles adhering to the carrier head  401  and the carrier cover  403 . Less slurry particles adhering to the carrier head  401  and the carrier cover  403  reduces the likelihood of the slurry particles dislodging the particles from the surface of the component and falling onto the polishing stations. 
         [0043]      FIG. 5  shows a side view of a CMP tool component in the form of a polishing fluid delivery arm assembly  500 . The polishing fluid delivery arm assembly  500  includes a fluid delivery arm  503 , a base member  502 , nozzles  504 , and fluid delivery hoses (not shown). The fluid delivery arm  503  includes a body  501  and a hydrophobic layer  508  disposed on the body  501 . The body  501  includes a top elongated surface  506 , a first lateral side  510 , a second lateral side  512  opposite the first lateral side  510 , a bottom  514 , a first end  580 , and a second end  582 . The first end  580  is coupled to the base member  502 . The elongated surface  506  runs from the first end  580  to the second end  582 . The second end  582  hangs out and over the polishing station (not shown). The nozzles  504  are located on the bottom  514  of the body  501 . The nozzles  504  provide a polishing fluid to the surface of a substrate (not shown). Fluid delivery hoses bring the polishing fluid to the nozzles  504  for dispersion on to the polishing surface on which the substrate is polished. 
         [0044]    The entire body  501  may be covered with the hydrophobic layer  508 . Alternatively, at least one of the first lateral side  510 , the opposing second lateral side  512 , top elongated surface  506 , or the bottom  514  may be covered with the hydrophobic layer  508 . Polishing fluid may contact the fluid delivery arm  503  when the nozzles  504  provide a polishing fluid to the polishing surface of the polishing station  111  when polishing a substrate. The presence of the hydrophobic layer  508  results in substantially less wetting of the fluid delivery arm  503 . Thus, rather than wetting the CMP tool fluid delivery arm  503  the polishing fluid will easily roll off the surface of the fluid delivery arm  503 . Therefore, erosion of the fluid delivery arm  503  will be substantially less, thus increasing the life of the fluid delivery arm  503 . Additionally, if the polishing fluid is a slurry, the substantially less wetting results in less slurry particles adhering to the fluid delivery arm  503 . Less slurry particles adhering to the fluid delivery arm  503  reduces the likelihood of the slurry particles dislodging the particles from the surface of the component and falling onto the polishing stations and scratching the substrate. Thus, there is a higher device quality and yield. 
         [0045]      FIG. 6  depicts one embodiment of a portion of a polishing apparatus assembly  600  for polishing a substrate  610 . The portion of a polishing apparatus assembly  600  includes a carriage  602 , a plurality of arms  612 , an arm cover  621 , and a polishing head  606 . Each arm  612  has a body  613 . The body  613  includes a first end  614  and a second end  616 . The first end  614  of the body  613  is coupled to the carriage  602 . The second end  616  of the body  613  extends from the carriage  602 , over a polishing station (not shown). The second end  616  of the body  613  is coupled to the polishing head  606 . 
         [0046]    The polishing head  606  includes a body  607  and a hydrophobic layer  604  disposed on the body  607 . A recess  608  is formed in the body  607 . The polishing head  606  retains the substrate  610  in the recess  608  that faces the polishing station. The polishing head  606  may press the substrate  610  against a polishing material (not shown) during processing. The polishing head  606  may be stationary or rotate, isolate, move orbitally, linearly or a combination of motions while pressing the substrate  610  against the polishing material. 
         [0047]    The arm cover  621  may be placed over an arm  612  from the first end  614  to the second end  616 . The arm cover  621  may further protect the arm  612  from fluid. The arm cover  621  includes a body  619  having a hydrophobic layer  604  disposed thereon. The body  619  has a first end  680  and a second end  682 . The body  619  has a width slightly wider than the width of the arm  612  and a length slightly longer than the length of the arm  612 , such that the arm cover  621  may be fitted over the arm  612 . The presence of the hydrophobic layer  604  on the polishing head  606  and the arm cover  621  results in substantially less wetting of the arm cover  621  and the polishing head  606 . Thus, rather than wetting the CMP tool polishing head  606  and the arm cover  621 , the polishing fluid will easily roll off the polishing head  606  and the arm cover  621  of the polishing head  606  and the arm cover  621 . Therefore, erosion of the polishing head  606  and the arm cover  621  will be substantially less, thus increasing the life of the polishing head  606  and the arm cover  621 . Additionally, if the polishing fluid is a slurry, the substantially less wetting results in less slurry particles adhering to the polishing head  606  and the arm cover  621 . Less slurry particles adhering to the polishing head  606  and the arm cover  621  reduces the likelihood of the slurry particles dislodging the particles from the surface of the component and falling onto the polishing stations and scratching the substrate. Thus, the hydrophobic layer results in a higher device quality and yield. 
         [0048]      FIG. 7  is a side view of a CMP tool component in the form of a pad conditioning arm assembly  700 . The pad conditioning arm assembly  700  includes a body  701  having a base  702 , a pad conditioning arm  704 , and a conditioner head  706 . The pad conditioning arm  704  has a first end  720 , coupled with the base  702 , and a second end  722 , coupled to the conditioner head  706 . The conditioner head  706  further includes a body  703 . The body  703  has a hydrophobic layer  714  disposed thereon. The body  703  may be coupled to a rotable and vertically movable end effector  710  that holds a conditioning disk  712 . The conditioning disk  712  has a bottom surface embedded with diamond abrasives, which can be rubbed against the surface of the polishing pad to retexture the pad. The conditioning disk  712  can be held in the end effector  710  by magnets (not shown), or mechanical fasteners (not shown). A gimbal mechanism (not shown) may be coupled between the end effector  710  and the conditioner head  706 , the gimbal mechanism allowing the end effector  710  to tilt at an angle relative to the pad conditioning arm  704 . 
         [0049]    Vertical motion of the end effector  710  and control of the pressure of the conditioning disk  712  can be provided by a vertical actuator (not shown) in the conditioner head  706 , such as a pressurizable chamber  708  positioned to apply a downward pressure to the end effector  710 . 
         [0050]    During the polishing process, the components of the pad conditioning arm assembly  700  are susceptible to contact with the fluid or slurry used. Over time, continuous contact with the fluid or slurry may result in erosion of these components. The presence of the hydrophobic layer  714  results in substantially less wetting of the arms  704  and the pad conditioner head  706 . Thus, rather than wetting the polishing pad conditioning arm  704  and the conditioner head  706 , the polishing fluid will easily roll off the surfaces of the polishing pad conditioning arm  704  and the conditioner head  706 . Therefore, erosion of the polishing pad conditioning arm  704  and the conditioner head  706  will be substantially less, thus increasing the lives of the polishing pad conditioning arm  704  and the conditioner head  706 . Additionally, if the polishing fluid is a slurry, the substantially less wetting results in less slurry particles adhering to the polishing pad conditioning arm  704  and the conditioner head  706 . Less slurry particles adhering to the polishing pad conditioning arm  704  and the conditioner head  706  reduces the likelihood of the slurry particles dislodging the particles from the surface of the component and falling onto the polishing stations and scratching the substrate. Thus, there is a higher device quality and yield. 
         [0051]    By depositing a hydrophobic layer on components of a CMP tool, erosion of the components is delayed and the life spans of these components are increased. 
         [0052]    While the foregoing is directed to embodiments of the present disclosure, other and further embodiments of the disclosure may be devised without departing from the basic scope thereof, and the scope thereof is determined by the claims that follow.
A component in a CMP tool disclosed herein having a surface and a hydrophobic layer deposited on the surface. In one example, the component is a component for delivering a fluid in a CMP tool. The component for delivering a fluid in a CMP tool includes an elongated member having a first end and a second end, and an elongated upper surface extending between the two ends. A hydrophobic layer is deposited on the elongated upper surface. In another example, the component is a ring shaped body having an upper side and a lower side. A hydrophobic layer is deposited on the inner surfaces of both the upper and lower sides. In another example, the component is a disk shaped body having a top surface, bottom surface, and ledge defined by the top and bottom surfaces. A hydrophobic layer is deposited on the surfaces and the ledge.