CROSS-REFERENCE TO RELATED APPLICATIONS 
     This application is a continuation of U.S. patent application Ser. No. 11/710,362, now U.S. Pat. No. 7,417,484, filed Feb. 23, 2007, which is a continuation of U.S. patent application Ser. No. 10/929,214, now U.S. Pat. No. 7,183,832, filed on Aug. 30, 2004. The disclosures of the above applications are incorporated herein by reference. 
    
    
     FIELD OF THE INVENTION 
     The present invention relates to level shifter circuits, and more particularly to analog level shifter circuits with programmable gains. 
     BACKGROUND OF THE INVENTION 
     Referring to  FIG. 1 , an exemplary magnetic storage system  10  such as a hard disk drive is shown. A buffer  12  stores data that is associated with the control of the hard disk drive. The buffer  12  may employ SDRAM or other types of low latency memory. A processor  14  performs processing that is related to the operation of the hard disk drive. A hard disk controller (HDC)  16  communicates with the buffer  12 , the processor  14 , a host  18 , a spindle/voice coil motor (VCM) driver  20 , and/or a read/write channel circuit  22 . 
     During a write operation, the read/write channel circuit (or read channel circuit)  22  encodes the data to be written onto the storage medium. The read/write channel circuit  22  processes the signal for reliability and may include, for example error correction coding (ECC), run length limited coding (RLL), and the like. During read operations, the read/write channel circuit  22  converts an analog output from the medium to a digital signal. The converted signal is then detected and decoded by known techniques to recover the data written on the hard disk drive. 
     One or more hard drive platters  24  include a magnetic coating that stores magnetic fields. The platters  24  are rotated by a spindle motor that is schematically shown at  26 . Generally the spindle motor  26  rotates the hard drive platter  24  at a fixed speed during the read/write operations. One or more read/write arms  28  move relative to the platters  24  to read and/or write data to/from the hard drive platters  24 . The spindle/VCM driver  20  controls the spindle motor  26 , which rotates the platter  24 . The spindle/VCM driver  20  also generates control signals that position the read/write arm  28 , for example using a voice coil actuator, a stepper motor or any other suitable actuator. 
     A read/write device  30  is located near a distal end of the read/write arm  28 . The read/write device  30  includes a write element such as an inductor that generates a magnetic field. The read/write device  30  also includes a read element (such as a magneto-resistive (MR) sensor) that senses the magnetic fields on the platter  24 . A preamplifier (preamp) circuit  32  amplifies analog read/write signals. When reading data, the preamp circuit  32  amplifies low level signals from the read element and outputs the amplified signal to the read/write channel circuit  22 . While writing data, a write current that flows through the write element of the read/write channel circuit  22  is switched to produce a magnetic field having a positive or negative polarity. The positive or negative polarity is stored by the hard drive platter  24  and is used to represent data. 
     Referring now to  FIG. 2 , an input of an amplifier  40  receives analog read signals from a read/write head  42 . The amplifier  40  amplifies the read signals and outputs the amplified read signals to a level shifter  44 . The level shifter  44  outputs a shifted voltage signal. The level shifter  44  shifts the voltage range at its input by a constant voltage. For example, the level shifter  44  may shift the range of voltages by a value that is equal to a threshold voltage of a transistor. However, other voltage shift magnitudes are possible. The level shifter  44  outputs the shifted voltage signal to a read channel. 
     Referring now to  FIG. 3 , the level shifter  44  includes a source follower module  52 , a load module  54 , and a bias generation module  56 . An MR sensor  58  in the read/write head  42  outputs read signals to an operational amplifier (opamp)  60  in the amplifier  40 . The opamp  60  outputs amplified read signals to the source follower module  52  in the level shifter  44 . The source follower module  52  communicates with the load module  54  and outputs a first voltage value to the load module  54  based on the amplified signals. The bias generation module  56  also communicates with the load module  54  and generates a bias current for the level shifter  44 . The load module  54  receives the bias current and outputs an output voltage value to the read channel. For example, the output voltage value may be equal to a value of the amplified read signals combined with a voltage drop across a resistor in the load module and a threshold voltage of a transistor in the source follower module  52 . 
     The gain of the level shifter  44  may be adjusted by changing the bias current that is output by the bias generation module  56  and/or the value of a resistor in the load module  54 . However, the operating parameters of the level shifter  44  are typically set during manufacturing. Therefore, a new level shifter  44  is typically required when an operating parameter of a circuit changes. A new level shifter  44  may need to be manufactured according to a desired specification and/or to suit a particular application. This may be both costly and time consuming when a desired circuit configuration changes. 
     SUMMARY OF THE INVENTION 
     A level shifter circuit according to the present invention includes a bias module that receives a first voltage value, that generates a second voltage value when an operational frequency of the level shifter circuit is less than a threshold, and that generates a third voltage value when the operational frequency is greater than or equal to the threshold. A programmable gain module communicates with the bias module and generates a fourth voltage value based on the second voltage value when the operational frequency is less than the threshold and based on the third voltage value when the operational frequency is greater than or equal to the threshold. 
     In other features, the bias module includes a load module that receives the first voltage value and that generates the second voltage value and a bypass module that receives the first voltage value and that generates the third voltage value. The first voltage value and the third voltage value are equal. A gain value of the programmable gain module determines a voltage gain of the level shifter circuit. A switching gain module communicates with the bias module and generates the first voltage value based on an input voltage value. The input voltage value is referenced from differential voltage inputs. A bias generation module communicates with the programmable gain module and generates a bias current for the level shifter circuit. A value of the bias current determines a voltage gain of the level shifter circuit. An output driver module receives the fourth voltage value and generates an output voltage value based on the fourth voltage value. The output voltage value is referenced from differential voltage outputs. 
     In still other features of the invention, the load module includes first and second resistances. The programmable gain module includes a programmable resistance. The bypass module includes first and second capacitances. First ends of the first and second capacitances communicate with first ends of the first and second resistances, respectively. Second ends of the first and second capacitances communicate with second ends of the first and second resistances, respectively. First and second ends of the programmable resistance communicate with the first ends of the first and second resistances, respectively, and the first ends of the first and second capacitances. The first and second resistances are one of p-channel metal-oxide semiconductor (PMOS) diode-connected resistors or n-channel MOS (NMOS) diode-connected resistors. 
     In yet other features, a switching gain module communicates with the load module and the bypass module and generates the first voltage value based on an input voltage value. The switching gain module includes first and second switches. First terminals of the first and second switches communicate with the second ends of the first and second resistances and the second ends of the first and second capacitances, respectively. The first and second switches are p-channel metal-oxide semiconductor (PMOS) transistors. First and second differential polarities of the input voltage value are input to control terminals of the first and second switches, respectively. A bias generation module communicates with the programmable gain module and generates a bias current for the level shifter circuit. The bias generation module includes first and second current sources. Second ends of the first and second current sources communicate with the first ends of the first and second resistances, respectively, the first ends of the first and second capacitances, respectively, and the first and second ends of the programmable resistance, respectively. 
     In still other features of the invention, an output driver module receives the fourth voltage value and generates an output voltage value based on the fourth voltage value. The output driver module includes first and second switches and first and second current sources. Control terminals of the first and second switches communicate with the first ends of the first and second resistances, respectively, the first ends of the first and second capacitances, respectively, and the first and second ends of the programmable resistance, respectively. Second terminals of the first and second switches communicate with first ends of the first and second current sources, respectively. The first and second switches are n-channel metal-oxide semiconductor (NMOS) transistors. First and second differential polarities of the output voltage value are referenced from the second terminals of the first and second switches, respectively. 
     In yet other features, the load module includes a first resistance. The programmable gain module includes a programmable resistance. The bypass module includes a first capacitance. A first end of the first capacitance communicates with a first end of the first resistance. A second end of the first capacitance communicates with a second end of the first resistance. A first end of the programmable resistance communicates with the first end of the first resistance and the first end of the first capacitance. The first resistance is one of a p-channel metal-oxide semiconductor (PMOS) diode-connected resistor or an n-channel MOS (NMOS) diode-connected resistor. 
     In still other features of the invention, a switching gain module communicates with the load module and the bypass module and generates the first voltage value based on an input voltage value. The switching gain module includes a first switch. A first terminal of the first switch communicates with the second end of the first resistance and the second end of the first capacitance. The first switch is a p-channel metal-oxide semiconductor (PMOS) transistor. The input voltage value is input to a control terminal of the first switch. A bias generation module communicates with the programmable gain module and generates a bias current for the level shifter circuit. The bias generation module includes a first current source. A second end of the first current source communicates with the first end of the first resistance, the first end of the first capacitance, and the first end of the programmable resistance. 
     In yet other features, an output driver module receives the fourth voltage value and generates an output voltage value based on the fourth voltage value. The output driver module includes a first switch and a first current source. A control terminal of the first switch communicates with the first end of the first resistance, the first end of the first capacitance, and the first end of the programmable resistance. A second terminal of the first switch communicates with a first end of the first current source. The first switch is an n-channel metal-oxide semiconductor (NMOS) transistor. The output voltage value is referenced from the second terminal of the first switch. 
     Further areas of applicability of the present invention will become apparent from the detailed description provided hereinafter. It should be understood that the detailed description and specific examples, while indicating the preferred embodiment of the invention, are intended for purposes of illustration only and are not intended to limit the scope of the invention. 
    
    
     
       BRIEF DESCRIPTION OF THE DRAWINGS 
       The present invention will become more fully understood from the detailed description and the accompanying drawings, wherein: 
         FIG. 1  is a functional block diagram of an exemplary data storage device according to the prior art; 
         FIG. 2  is an exemplary functional block diagram of a read data path in a data storage device that includes a level shifter according to the prior art; 
         FIG. 3  is a functional block diagram of the read data path in  FIG. 2  illustrated in further detail according to the prior art; 
         FIG. 4  is a functional block diagram of a level shifter with an adjustable gain in a differential configuration according an exemplary embodiment of the present invention; 
         FIG. 5  is a functional block diagram and electrical schematic of the level shifter in  FIG. 4  illustrated in further detail; 
         FIG. 6  is an electrical schematic and equivalent circuit diagram of the level shifter in  FIG. 5 ; 
         FIG. 7  is an electrical schematic of an exemplary programmable resistor; 
         FIG. 8  is a plot illustrating the midband gain of the level shifter as a function of frequency; 
         FIG. 9  is a functional block diagram of a level shifter with an adjustable gain in a single-ended configuration according to another exemplary embodiment of the present invention; and 
         FIG. 10  is a functional block diagram and electrical schematic of the level shifter in  FIG. 9  illustrated in further detail. 
     
    
    
     DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS 
     The following description of the preferred embodiment(s) is merely exemplary in nature and is in no way intended to limit the invention, its application, or uses. For purposes of clarity, the same reference numbers will be used in the drawings to identify similar elements. As used herein, the term module refers to an application specific integrated circuit (ASIC), an electronic circuit, a processor (shared, dedicated, or group) and memory that execute one or more software or firmware programs, a combinational logic circuit, and/or other suitable components that provide the described functionality. 
     Referring now to  FIG. 4 , an exemplary level shifter circuit  61  in a differential configuration according to the present invention includes a switching gain module  62  that receives a differential input voltage value. The switching gain module  62  generates a first voltage value based on the differential input voltage value. A bias module  63  receives the first voltage value and includes a load module  64  and a bypass module  65 . The load module  64  receives the first voltage value and generates a second voltage value based on the first voltage value. A programmable gain module  66  receives the second voltage value and generates a third voltage value. The bypass module  65  communicates with the programmable gain module  66  and also receives the first voltage value. 
     The bypass module  65  bypasses the load module  64  and transmits the first voltage value to the programmable gain module  66  during high frequency operation. Therefore, the programmable gain module  66  generates the third voltage value based on the second voltage value during normal operation and based on the first voltage value during high frequency operation. A bias generation module  68  communicates with the programmable gain module  66  and generates a bias current for the level shifter circuit  61 . The programmable gain module  66  and the bias generation module  68  receive a gain control signal  70 . The gain control signal  70  selectively adjusts a resistance of a resistive load in the programmable gain module  66  to adjust a gain of the level shifter circuit  61 . The gain control signal  70  also selectively adjusts the value of the bias current that is generated by the bias generation module  68  to adjust the gain of the level shifter circuit  61 . While a single gain control signal  70  is illustrated in  FIG. 4 , the programmable gain module  66  and the bias generation module  68  may solely receive a control signal or both receive independent control signals. 
     The gain adjustment may be a mechanical adjustment that is made before, during, or after manufacturing. Additionally, the gain adjustment may be made automatically by a controller during normal operation. The level shifter circuit  61  optionally includes an output driver module  72 . The output driver module  72  receives the third voltage value from the programmable gain module  66  and generates an output voltage value. The level shifter circuit  61  shifts a range of voltages that occur between the differential output terminals with respect to the differential input terminals. For example, the negative terminal of the differential input voltage may be referenced to ground. In this case, the level shifter circuit  61  shifts the range of voltages that occur on the differential output terminals in either a positive or a negative direction so that the negative output terminal is not referenced to ground. 
     Referring now to  FIG. 5 , the exemplary level shifter circuit  61  in a differential configuration is illustrated in further detail. The switching gain module  62  includes first and second transistors  80  and  82 , respectively. For example, the first and second transistors  80  and  82 , respectively, may be p-channel metal-oxide semiconductor (PMOS) field-effect transistors (FETs) that have gates, sources, and drains, although other transistor types may be used. Drains (or second terminals) of the first and second transistors  80  and  82 , respectively, communicate with a ground potential. Gates (or control terminals) of the first and second transistors  80  and  82 , respectively, communicate with positive (V ip ) and negative (V im ) terminals of the differential input voltage, respectively. The first and second transistors  80  and  82 , respectively, both have a transconductance of g m     1   . Therefore, the first and second transistors  80  and  82 , respectively, both have a resistance of 
     
       
         
           
             
               1 
               
                 g 
                 
                   m 
                   1 
                 
               
             
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     The load module  64  includes first and second resistive elements  84  and  86 , respectively. For example, in  FIG. 5 , the first and second resistive elements  84  and  86 , respectively, are PMOS diode-connected transistors  84  and  86 . However, n-channel MOS (NMOS) diode-connected transistors or conventional resistors may be used. The PMOS diode-connected transistors  84  and  86  include a PMOS transistor with the gate connected to the drain. Drains of the first and second diode-connected transistors  84  and  86 , respectively, communicate with sources of the first and second transistors  80  and  82 , respectively, in the switching gain module  62 . The first and second diode-connected transistors  84  and  86 , respectively, both have a transconductance of g m     2   . Therefore, the first and second diode-connected transistors  84  and  86 , respectively, both have a resistance of 
     
       
         
           
             
               1 
               
                 g 
                 
                   m 
                   2 
                 
               
             
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     The bypass module  65  includes first and second capacitors  88  and  90 , respectively. A first end of the first capacitor  88  communicates with a source of the first diode-connected transistor  84 , and a second end of the first capacitor  88  communicates with the drain of the first diode-connected transistor  84 . A first end of the second capacitor  90  communicates with a source of the second diode-connected transistor  86 , and a second end of the second capacitor  90  communicates with the drain of the second diode-connected transistor  86 . The first and second capacitors  88  and  90 , respectively, have a value of C boost  and are shorted during high frequency operation. Therefore, both the first and second diode-connected transistors  84  and  86 , respectively, are shorted during high frequency operation. 
     The programmable gain module  66  includes a programmable resistor  92  with a resistance R prg . A first end of the programmable resistor  92  communicates with the source of the first diode-connected resistor  84  and the first end of the first capacitor  88 . A second end of the programmable resistor  92  communicates with the source of the second diode-connected resistor  86  and the first end of the second capacitor  90 . The gain control signal  70  communicates with the programmable gain module  66 . The resistance of the programmable resistor  92  may be adjusted to adjust the gain of the level shifter circuit  61 , as will be described in more detail below. 
     The bias generation module  68  includes first and second current sources  94  and  96 , respectively. A first end of the first current source  94  communicates with a supply potential, and a second end of the first current source  94  communicates with the source of the first diode-connected resistor  84 , the first end of the first capacitor  88 , and the first end of the programmable resistor  92 . A first end of the second current source  96  communicates with a supply potential, and a second end of the second current source  96  communicates with the source of the second diode-connected resistor  86 , the first end of the second capacitor  90 , and the second end of the programmable resistor  92 . The first and second current sources  94  and  96 , respectively, both supply a current I to the level shifter circuit  61 . The gain control signal  70  communicates with the bias generation module  68 . The value of I may be adjusted to adjust the gain of the level shifter circuit  61 , as will be described in more detail below. 
     The output driver module  72  includes third and fourth transistors  98  and  100 , respectively. For example, the third and fourth transistors  98  and  100 , respectively, may be NMOS transistors, although other transistors may be used. Drains of the third and fourth transistors  98  and  100 , respectively, communicate with a supply potential. A gate of the third transistor  98  communicates with the second end of the first current source  94 , the source of the first diode-connected resistor  84 , the first end of the first capacitor  88 , and the first end of the programmable resistor  92 . A gate of the fourth transistor  100  communicates with the second end of the second current source  96 , the source of the second diode-connected resistor  86 , the first end of the second capacitor  90 , and the second end of the programmable resistor  92 . 
     The output driver module  72  also includes third and fourth current sources  102  and  104 , respectively. A first end of the third current source  102  communicates with a source of the third transistor  98 , and a first end of the fourth current source  104  communicates with a source of the fourth transistor  100 . Second ends of the third and fourth current sources  102  and  104 , respectively, communicate with a ground potential. Sources of the third and fourth transistors  98  and  100 , respectively, communicate with positive (V op ) and negative (V om ) terminals of the differential output voltage, respectively. 
     Referring now to  FIG. 6 , an equivalent circuit  112  to the level shifter circuit  61  in a differential configuration is shown for purposes of determining the gain of the level shifter circuit  61 . The output voltage of the level shifter circuit  61  is determined according to a voltage divider operation. During normal frequency operation, the midband gain of the level shifter circuit  61  is 
                 R   prg         2     g     m   1         +     2     g     m   2         +     R   prg         .         
During high frequency operation, the first and second capacitors  88  and  90 , respectively, short and effectively remove the first and second diode-connected resistors  84  and  86 , respectively, from the equivalent circuit  112 . Therefore, during high frequency operation, the midband gain of the level shifter circuit  61  is
 
                 R   prg         2     g     m   1         +     R   prg         ,         
which effectuates an increase in the gain of the level shifter circuit  61 .
 
     Additionally, the transconductance g m     1    of the first and second transistors  80  and  82 , respectively, is equivalent to the square root of the current √{square root over (I)} that is generated by the first and second current sources  94  and  96 , respectively. Since g m     1    remains in the midband gain function during high frequency operation, the value of I and/or the value of R prg  may be adjusted to adjust the gain of the level shifter circuit  61 . This allows for an additional degree of freedom in the design of the level shifter circuit  61  as well as control of the circuit  61  during operation. 
     Referring now to  FIG. 7 , an exemplary programmable resistor  92  includes resistors  114 - 1 ,  114 - 2 ,  114 - 3 , and  114 - 4  that are connected in series. Switches  116 - 1 ,  116 - 2 ,  116 - 3 , and  116 - 4  are connected in parallel with each of the resistors  114 - 1 ,  114 - 2 ,  114 - 3 , and  114 - 4 . A current state of the switches  116 - 1 ,  116 - 2 ,  116 - 3 , and  116 - 4  (open or closed) is programmable and determines the overall resistance of the programmable resistor  92 . For example, if each of the switches  116 - 1 ,  116 - 2 ,  116 - 3 , and  116 - 4  is open and the resistors  114 - 1 ,  114 - 2 ,  114 - 3 , and  114 - 4  all have a resistance R, the total resistance of the programmable resistor  92  is equal to 4×R=4R. 
     Referring now to  FIG. 8 , a plot of the midband gain illustrates the increase in gain that occurs during high frequency operation. A first function  120  illustrates the path of the curve when the first and second capacitors  88  and  90 , respectively, are not utilized to bypass the first and second diode-connected resistors  84  and  86 , respectively, during high frequency operation. A second function  122  (indicated by a dotted-line) illustrates a spike in the gain during high frequency operation when the first and second capacitors  88  and  90 , respectively, are used. 
     Referring now to  FIG. 9 , an exemplary level shifter circuit  61 ′ in a single-ended configuration according to the present invention is shown. The single-ended configuration of the level shifter circuit  61 ′ functions similarly to the differential configuration of the level shifter circuit  61  illustrated in  FIGS. 4 and 5 . Additionally, elements shown in  FIGS. 9 and 10  are labeled similarly to elements shown in  FIGS. 4 and 5 . For example, in  FIG. 4 , the level shifter circuit is identified by  61 , and in  FIG. 9  the level shifter circuit is identified by  61 ′. 
     The level shifter circuit  61 ′ includes a switching gain module  62 ′ that receives a single-ended input voltage value. The switching gain module  62 ′ generates a first voltage value based on the single-ended input voltage value. A bias module  63 ′ receives the first voltage value and includes a load module  64 ′ and a bypass module  65 ′. The load module  64 ′ receives the first voltage value and generates a second voltage value based on the first voltage value. A programmable gain module  66 ′ receives the second voltage value and generates a third voltage value. The bypass module  65 ′ communicates with the programmable gain module  66 ′ and also receives the first voltage value. 
     The bypass module  65 ′ transmits the first voltage value to the programmable gain module  66 ′. The programmable gain module  66 ′ generates the third voltage value based on the second voltage value during normal operation and based on the first voltage value during high frequency operation. A bias generation module  68 ′ communicates with the programmable gain module  66 ′ and generates a bias current for the level shifter circuit  61 ′. The programmable gain module  66 ′ and the bias generation module  68 ′ receive a gain control signal  70 ′. The gain control signal  70 ′ selectively adjusts a resistance of a resistive load in the programmable gain module  66 ′ to adjust a gain of the level shifter circuit  61 ′. The gain control signal  70 ′ also selectively adjusts the value of the bias current that is generated by the bias generation module  68 ′ to adjust the gain of the level shifter circuit  61 ′. The level shifter circuit  61 ′ optionally includes an output driver module  72 ′. The output driver module  72 ′ receives the third voltage value from the programmable gain module  66 ′ and generates an output voltage value. 
     Referring now to  FIG. 10 , the exemplary level shifter circuit  61 ′ in a single-ended configuration is illustrated in further detail. The switching gain module  62 ′ includes a first transistor  80 ′. A drain of the first transistor  80 ′ communicates with a ground potential. A gate of the first transistor  80 ′ communicates with a single-ended input voltage terminal (V in ). The first transistor  80 ′ has a transconductance of g m     1    and a resistance of 
               1     g     m   1         .         
The load module  64 ′ includes a first diode-connected resistor  84 ′. A drain of the first diode-connected resistor  84 ′ communicates with a source of the first transistor  80 ′ in the switching gain module  62 ′. The first diode-connected resistor  84 ′ has a transconductance of g m     2    and a resistance of
 
     
       
         
           
             
               1 
               
                 g 
                 
                   m 
                   2 
                 
               
             
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     The bypass module  65 ′ includes a first capacitor  88 ′. A first end of the first capacitor  88 ′ communicates with a source of the first diode-connected resistor  84 ′, and a second end of the first capacitor  88 ′ communicates with the drain of the first diode-connected resistor  84 ′. The first capacitor  88 ′ has a value of C boost  and is shorted during high frequency operation. The programmable gain module  66 ′ includes a programmable resistor  92 ′ with a resistance R prg . A first end of the programmable resistor  92 ′ communicates with the source of the first diode-connected resistor  84 ′ and the first end of the first capacitor  88 ′. A second end of the programmable resistor  92 ′ communicates with a supply potential. Therefore, a DC current flows through the programmable resistor  92 ′ when the level shifter circuit  61 ′ is in the single-ended configuration. The gain control signal  70 ′ communicates with the programmable gain module  66 ′. The resistance of the programmable resistor  92 ′ may be adjusted to adjust the gain of the level shifter circuit  61 ′. 
     The bias generation module  68 ′ includes a first current source  94 ′. A first end of the first current source  94 ′ communicates with a supply potential, and a second end of the first current source  94 ′ communicates with the source of the first diode-connected resistor  84 ′, the first end of the first capacitor  88 ′, and the first end of the programmable resistor  92 ′. The first current source  94 ′ supplies a current I to the level shifter circuit  61 ′. The gain control signal  70 ′communicates with the bias generation module  68 ′. The value of I may be adjusted to adjust the gain of the level shifter circuit  61 ′. 
     The output driver module  72 ′ includes a second transistor  98 ′. A drain of the second transistor  98 ′ communicates with a supply potential. A gate of the second transistor  98 ′ communicates with the second end of the first current source  94 ′, the source of the first diode-connected resistor  84 ′, the first end of the first capacitor  88 ′, and the first end of the programmable resistor  92 ′. The output driver module  72 ′ also includes a second current source  102 ′. A first end of the second current source  102 ′ communicates with a source of the second transistor  98 ′, and a second end of the second current source  102 ′ communicates with a ground potential. The source of the second transistor  98 ′ communicates with a single-ended output voltage terminal (V out ). 
     Those skilled in the art can now appreciate from the foregoing description that the broad teachings of the present invention can be implemented in a variety of forms. Therefore, while this invention has been described in connection with particular examples thereof, the true scope of the invention should not be so limited since other modifications will become apparent to the skilled practitioner upon a study of the drawings, specification, and the following claims.
A level shifter configured to generate an output voltage having a shifted voltage level relative to an input voltage, the level shifter includes a first gain module having a first resistance, the first gain module to generate a first voltage based on the input voltage and the first resistance. A load module having a second resistance, the load module to generate a second voltage based on the first voltage and the second resistance. A second gain module having a third resistance, the second gain module to generate a third voltage based on one of the second voltage and the third resistance or the first voltage and the third resistance; and an output driver to output the output voltage having the shifted voltage level based on the third voltage.