This application claims the benefit of the Korean Patent Application No. P2005-52666 filed on Jun. 17, 2005, which is hereby incorporated by reference. 
     BACKGROUND OF THE INVENTION 
     1. Field of the Invention 
     The present invention relates to a fabricating method for a flat panel display device, and more particularly to a fabricating method for a flat panel display device that is adapted to reduce its manufacturing cost. 
     2. Description of the Related Art 
     Generally, a liquid crystal display (LCD) device controls the light transmittance of liquid crystal in accordance with a video signal, thereby displaying a picture. For this, the liquid crystal display device includes a liquid crystal display panel where liquid crystal cells are arranged in a matrix shape, and a drive circuit for driving the liquid crystal display panel. 
     The liquid crystal display device is divided into two main classes in accordance with the direction of the electric field which drives the liquid crystal: a twisted nematic (TN) mode where a vertical electric field is used and an in-plane switch (IPS) mode where a horizontal electric field is used. 
     The TN mode is a mode in which the liquid crystal is driven by a vertical electric field between a pixel electrode and a common electrode respectively arranged on the lower and upper substrates. The TN mode device has an advantage in that its aperture ratio is relatively high but a disadvantage in that its viewing angle is relatively narrow. On the other hand, the IPS mode is a mode in which the liquid crystal is driven by a horizontal electric field between the pixel electrode and the common electrode arranged in parallel on the lower substrate. The IPS mode device has an advantage in that its viewing angle is relatively wide but a disadvantage in that its aperture ratio is relatively low. 
       FIG. 1  is a sectional diagram representing a TN mode liquid crystal display panel of the related art. In  FIG. 1 , the liquid crystal display panel includes an upper array substrate having black matrix  54 , a color filter  56 , a common electrode  68 , and an upper alignment film  58  which are sequentially formed on an upper substrate  52 . The panel also includes a lower array substrate having a thin film transistor (hereinafter, referred to as a “TFT”), a pixel electrode  66  and a lower alignment film  88  which are formed on a lower substrate  82 . Liquid crystal  16  is injected into an inner space between the upper array substrate and the lower array substrate. 
     In the upper array substrate, the black matrix  54  defines a cell area where a color filter  56  is to be formed. The black matrix  54  prevents light leakage and absorbs external light to increase contrast. The color filter  56  is formed in the cell area which is defined by the black matrix  54 . The color filter  56  is formed in R, G and B to realize a color picture of the liquid crystal display panel. A common voltage is supplied to the common electrode  68  to control the movement of the liquid crystal  16 . In contrast to the TN mode in which the common electrode  68  is formed on the upper substrate  52  and the vertical electric field is used, in the IPS mode, the horizontal electric field is used, and the common electrode  68  is formed in the lower array substrate. 
     In the lower array substrate, the TFT includes a gate electrode  59  formed on the lower substrate  82  along with a gate line (not shown); semiconductor layers  64 ,  97  overlapping the gate electrode  59  with a gate insulating film  94  separating the semiconductor layers  64 ,  97  from the gate electrode  59 ; and source and drain electrodes  90 ,  92  formed over the semiconductor layers  64 ,  97  and spaced apart from each other. A data line (not shown) is formed along with the source/drain electrodes  90 ,  92 . The TFT supplies a pixel signal from the data line to a pixel electrode  66  line in response to a scan signal from the gate line. 
     The pixel electrode  66  is formed over a passivation film  100  and is in contact with a drain electrode  92  of the TFT through a contact hole. The pixel electrode  66  is formed of a transparent conductive material with high light transmittance. The upper and lower alignment films  58 ,  88  for liquid crystal alignment are formed by a rubbing process after spreading an alignment material, such as polyimide, over the upper and lower substrates, respectively. 
     Thin film patterns, including the gate electrode  59 , of the liquid crystal display panel are patterned by a photolithography process using a mask.  FIGS. 2A to 2D  are sectional diagrams representing the steps of forming a gate electrode using a photolithography process. 
     In  FIG. 2A , a gate metal  59   a  and a photo-resist material  60  are deposited on a lower substrate  82  by a deposition method such as sputtering. A mask  61  with apertures aligned for each area where the gate electrode  59  is to be formed is placed on the photo-resist material  60 . An exposure and development process is performed to form a photo-resist pattern  60   a  shown in  FIG. 2B . An etching process is then performed to pattern the gate metal  59 , as shown in  FIG. 2C . Finally, as shown in  FIG. 2D , the gate electrode  59  is completed with a stripping process to strip out the photo-resist pattern  60   a.    
     The photolithography process of the related art using the mask includes at least a photo-resist spreading process, a mask aligning process, an exposure and development process and an etching process. Thus, the related art process is complicated. Also, a substantial amount of photo-resist material and developing solution may be wasted during the process for developing the photo-resist pattern. Moreover, expensive equipment is used in the exposure process of the related art photolithography process. 
     SUMMARY OF THE INVENTION 
     Accordingly, the present invention is directed to a fabricating method for a flat panel display device that substantially obviates one or more of the problems due to limitations and disadvantages of the related art. 
     Accordingly, it is an object of the present invention to provide a fabricating method for a flat panel display device that is adapted to reduce its manufacturing cost. 
     Additional features and advantages of the invention will be set forth in the description which follows, and in part will be apparent from the description, or may be learned by practice of the invention. The objectives and other advantages of the invention will be realized and attained by the structure and method particularly pointed out in the written description and claims hereof as well as the appended drawings. 
     In order to achieve these and other objects of the invention, a fabricating method for a flat panel display device having a thin film pattern over a substrate includes the steps of: depositing a hydrophilic resin over a substrate; patterning the hydrophilic resin to form hydrophilic resin patterns over areas outside where thin film patterns are to be formed over the substrate; depositing a hydrophobic nano powder thin film material over the substrate and between the hydrophilic resin patterns; removing the hydrophilic resin patterns to form hydrophobic nano powder thin film patterns over the substrate; and treating the hydrophobic nano powder thin film patterns to form the thin film pattern. 
     It is to be understood that both the foregoing general description and the following detailed description are exemplary and explanatory and are intended to provide further explanation of the invention as claimed. 
    
    
     
       BRIEF DESCRIPTION OF THE DRAWINGS 
       The accompanying drawings, which are included to provide a further understanding of the invention and are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and together with the description serve to explain the principles of the invention. In the drawings: 
         FIG. 1  is a sectional diagram representing a related art liquid crystal display panel; 
         FIGS. 2A to 2D  are sectional diagrams representing the steps of forming a gate electrode by use of a related art photolithography process; and 
         FIGS. 3A to 3G  are sectional diagrams representing the steps of forming a gate electrode according to an exemplary embodiment of the present invention. 
     
    
    
     DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS 
     Reference will now be made in detail to the preferred embodiments of the present invention, examples of which are illustrated in the accompanying drawings.  FIGS. 3A to 3G  are sectional diagrams representing the steps of forming a gate electrode according to an exemplary embodiment of the present invention. 
     As shown in  FIG. 3A , a polymer resin  162  is spread on the entire surface of a lower substrate  182  by a coating method such as spin coating or nozzle coating. For example, a hydrophilic polymer resin which dissolves in water can be used as the polymer resin  162 . 
     As shown in  FIG. 3B , a soft mold  170  which has projections  170   b  and grooves  170   a  is placed on the polymer resin  162 . The projections  170   b  are aligned with areas of the lower substrate  182  where gate electrodes are to be formed, and the grooves  170   a  are positioned to correspond to the other areas of the lower substrate  182 . Here, the soft mold  170  may be a soft mold disclosed in the Korean Patent Application No. 2003-0098122, which is hereby incorporated herein by reference. The soft mold  170  may be made of a rubber material which has high elasticity, such as polydimethylsiloxane PDMS, polyurethane, or cross-linked novolac resin. 
     The surface of the projections  170   b  of the soft mold  170  is placed in contact with the polymer resin  162 . The weight of the soft mold  170  applies pressure on the portions of the polymer resin  162  that contact the projections  170   b , and after a given amount of time, e.g., 30 seconds to 10 minutes, the projections  170   b  come in contact with the lower substrate  182 . Further, at the same time, the polymer resin  162  is soft-hardened by ultraviolet ray UV or the substrate  182  is baked at a temperature of about 130° C. or below. Then, a capillary force generated by a pressure between the soft mold  170  and the lower substrate  182  and a repulsive force between the soft mold  170  and the polymer resin  162  cause the polymer resin  162  to move into the grooves  170   a  of the soft mold  170 . As a result, as shown in  FIG. 3C , polymer resin patterns  162   a  are formed in areas corresponding to the grooves  170   a  of the soft mold  170 . 
     Then, the soft mold  170  is removed, and a nano powder gate electrode material  159   a  is spread over the lower substrate  182  where the polymer resin patterns  162   a  are formed, as shown in  FIG. 3D . The nano powder gate electrode material is prepared by dissolving base materials such as Al, Cu, Cr, Mo, Al/Nd or any of their alloys in a hydrophobic solvent, thereby decomposing the base materials into nano sized powder. The hydrophobic solvent may include hexane and toluene. Then, the nano powder gate electrode material  159   a  is spread over the lower substrate  182  between the polymer resin patterns  162   a , i.e., in the areas corresponding to the projections  170   b  of the soft mold  170  or in the areas where the gate electrodes are to be formed on the lower substrate  182 . 
     As shown in  FIG. 3E , H 2 O is applied over the lower substrate  182  where the hydrophilic polymer resin patterns  162   a  and the nano powder gate electrode material  159   a  are formed to remove the hydrophilic polymer resin patterns  162   a  by dissolving it in H 2 O. The nano powder gate electrode material  159   a  previously dissolved in the hydrophobic solvent does not dissolve in H 2 O. Thus, only the hydrophilic polymer resin patterns  162   a  are removed, and the nano powder gate electrode material  159   a  remains on the lower substrate  182 , as shown in  FIG. 3F . 
     Then, the nano powder gate electrode material  159   a  is heat-treated by a firing process to form a current path between the nano powder gate electrode material  159   a , thereby forming the gate electrodes  159 , as shown in  FIG. 3G . 
     With the use of the soft mold  170 , the hydrophilic polymer resin - 162  which dissolves in the hydrophilic solvent, and the nano powder gate electrode material  159   a  which is dissolved in the hydrophobic solvent, thin film patterns can be formed without performing such processes as the exposure and development process and the etching process which are required in the related art photolithography process to form thin film patterns. Accordingly, a fabricating process of the flat panel display device can be simplified, and the waste of photo-resist and developing solution for developing photo-resist patterns can be reduced. In addition, the expensive exposure equipment is not required. As a result, the manufacturing cost of the liquid crystal display panel can be reduced. 
     Here, although the use of a soft mold to form the hydrophilic polymer resin patterns is described in detail above in the exemplary embodiment, the hydrophilic polymer resin patterns can also be formed using a hard mold. The hard mold can be made of, for example, silicon or quartz. If the hard mold is used, the hydrophilic polymer resin is patterned in a state that the solvent component of the hydrophilic polymer resin which is spread over the substrate is volatized, i.e., in the state that the hydrophilic polymer resin is imprinted. Then, the hydrophilic polymer resin is patterned by the pressure applied from the outside and the high temperature heat. In contrast, when the soft mold is used as discussed in detail above, the soft mold patterns the hydrophilic polymer resin by applying pressure with its own weight to cause the surface of the projections of the soft mold to contact the substrate. 
     Also, in the above exemplary embodiment, a process of forming a gate pattern is described in detail. However, a similar process can be used to form other thin film patterns in a liquid crystal display device. 
     As described above, the fabricating method of the flat panel display device according to the exemplary embodiment of the present invention patterns the thin film patterns using the soft or hard mold, the hydrophilic polymer resin which dissolves in the hydrophilic solvent, and the nano powder gate electrode material which is dissolved in the hydrophobic solvent. With this method, the exposure, development, and the etching processes, which are required to pattern the thin film patterns using the related art photolithography process, can be omitted. Accordingly, the fabricating process of the flat panel display device can be simplified, and the waste of photo-resist and the developing solution for developing the photo-resist pattern can be reduced. In addition, the expensive exposure equipment is not required. As a result, the manufacturing cost of the liquid crystal display panel can be reduced. 
     It will be apparent to those skilled in the art that various modifications and variations can be made in the fabricating method for a flat panel display device of the present invention without departing from the sprit or scope of the invention. Thus, it is intended that the present invention covers the modifications and variations of this invention provided they come within the scope of the appended claims and their equivalents.
A fabricating method for a flat panel display device having a thin film pattern over a substrate is disclosed. The fabricating method includes depositing a hydrophilic resin over a substrate and patterning the hydrophilic resin to form hydrophilic resin patterns over areas outside where thin film patterns are to be formed over the substrate. The fabricating method also includes depositing a hydrophobic nano powder thin film material over the substrate and between the hydrophilic resin patterns and removing the hydrophilic resin patterns to form hydrophobic nano powder thin film patterns over the substrate. Moreover, the fabricating method includes treating the hydrophobic nano powder thin film patterns to form the thin film pattern.