SPONSORSHIP STATEMENT 
       [0001]    The present invention is sponsored by Iranian National Science Foundation for international filing. 
       FIELD OF THE INVENTION 
       [0002]    The present invention is related to a method for producing nanostructures containing carbon, in particular to create nanowalls under atmospheric pressure without making vacuum and plasma. 
       BACKGROUND OF THE INVENTION 
       [0003]    There are kinds of known nanostructures (carbon nanostructures) generally including carbon. Some examples of carbon nanostructures are Fullerene and carbon nano-tubes. Other carbon nanostructures called as carbon nanowalls and in which carbon nanowalls have produced by plasma method and also Silicon is applied as substrate. A method for producing carbon nanowalls is applying plasma and CH4 and H2 also Fluorine Hydrocarbons and or Fluorine and Hydrogen Hydrocarbons are applied. 
         [0004]    Some problems should be resolved by invention 
         [0005]    Some of documents show that the carbon nanowalls are grown on silicon substrate. Accordingly, if there is no silicon substrate, carbon nanowalls cannot be grown. There is no technique for using non-silicon substrates and glass as substrate to grown carbon nanowalls. Also in same documents, Fluorine Hydrocarbons gases including Fluorine, Hydrogen, and Carbon is applied. So if there are no Hydrocarbon gases including Fluorine and Hydrogen, it is not possible to make carbon nanowalls. In this document, there is no technique for applying Hydrocarbon including Hydrogen and carbon and with unsaturated bonds. Also in same document, plasma and vacuum is applied and otherwise carbon nanowalls cannot be grown. 
         [0006]    This document shows no technique for using Pyrolysis to grown carbon nanowalls. 
         [0007]    This document indicates no technique for growing and establishing carbon nanowalls under atmospheric pressure. 
         [0008]    Other document determines that carbon nanowalls have grown on silicon substrate and that applied catalyst is Iron Nickel. So if the substrate and catalyst is not Silicon and Iron Nickel respectively, carbon nanowalls cannot be formed. In same document there is no technique for using glass substrate and such catalysts as Iron, copper, Aluminum separately or in thin layers to make carbon nanowalls. 
       SUMMARY OF THE INVENTION 
       [0009]    Carbon nanowalls can be applied for different functions and demands so no method for establishing carbon nanowalls with high random has developed; accordingly this subject is of current invention which provides a method for making carbon nanowalls. Other subject of current invention is a cost-effective method for making carbon nanowalls. Other subject of current invention is a method for making less complex carbon nanowalls and other one is to grow carbon nanowalls for considering glass substrate. 
         [0010]    Inventors have found that carbon nanowalls can be established on the glass substrate by feeding Hydrocarbon and non Hydrocarbon gases in a hot chamber and by growing on thin mental films. Existing invention provides a method for establishing carbon nanowalls. In same method, there is a hot chamber with hot walls and space; and gas including carbon material and non carbon diluter is entered into same chamber. After entering gas and passing through hot space, carbon nanowalls are set on the base and substrate and there will be reaction at the middle of chamber. 
         [0011]    There is pressure in hot chamber and gas is passing under atmospheric pressure and there is no vacuum. Additional gas entered into hot and reaction chamber is gone out. Some effective factors for growing carbon nanowalls and changing structures are temperature of reaction chamber, type of catalyst on the glass substrate, ratio of Hydrocarbon and non hydrocarbon gases and reaction time. This is an advantage by which carbon nanowalls with special properties (thickness, height, growth density, monotony and distribution) are established. 
         [0012]    Carbon nanowalls is descry substrate as 2 dimensional nanostructures in which a 2 dimensional graphitic is extended and connected to a base material while same nanostructure can be composed of one or more walls. Term of 2 dimensional means that height and length of nanostructure is more than thickness of nanostructure. Nanostructure (nanowalls) can be composed of one or 4 more walls or pair of 2-fold layer (there is space between layers). Carbon nanowalls have thickness between 0.05 mm to 40 mm and length and height about 100 nm to 10 μm. since length and height is more than carbon nanowalls, it is called as carbon nanowalls. Example of nanowalls established by same method is carbon nanostructure with wall which is extended in height and length. Fullerenes can be example of 0 dimensional carbon nanostructures and carbon nano-tubes are known as 1 dimensional carbon structures. Hot chamber is one which is so warmed that gases are ionized and make radical as these enter into same chamber. In the method, gases in combination of hydrocarbon and non hydrocarbon gases separately are entered for making the surface ready. Gaseous atoms entered into chamber are ionized and make radical by heating the walls and chamber before accessing base material. Then materials close to substrate while other gaseous atoms entered into chamber are ionized and make radical in reaction region. Then radicals are put and grown on base material. So marking is done in same method: regions where atoms are changed to radical and prepared for reaction and regions in which carbon nanostructures are established on base materials. These regions are called as radical and reaction respectively. On the other hand, radical and reaction regions are connected together and are put inside the chamber. 
         [0013]    Both regions are activated by warming around the chamber. To do it, thermal elements covered by ceramic are employed which make heat by applying electricity. According to division degree technique (quantity of established radicals) radical source can be controlled by changing temperature or electricity power entered into thermal elements. Other advantage of same technique is that feeding speed of radical sources inside the chamber for growing carbon nanowalls can be controlled. 
         [0014]    Non-carbon radicals entered into reaction medium include hydrogen radicals (containing hydrogen radicals or atoms H). Hydrogen radicals established by a radical source with hydrogen are entered into reaction region. Gaseous hydrogen (H2) and gaseous Ammoniac (NH3) is example of radical source for providing hydrogen radicals. Applying hydrogen radicals allow carbon nanowalls to be formed singly. Presence of radials OH or oxygen radicals (O) in reaction chamber prevents to establish carbon nanowalls. 
         [0015]    Source material includes kind of materials with carbon. Such materials are applied in mixture. Materials having carbon and hydrogen are employed as carbon source material. Hydrocarbon material used as carbon source material is C2H2. 
         [0016]    If material has carbon and hydrogen, C2H2 is used. These carbon nanowalls have irregular location and angles extended vertically so these are suitable for Hydrogen and also for increasing hydrogen storage in fuel cells. 
         [0017]    Authors have found that characteristics of carbon nanowalls produced by this method are related to base materials used for growing carbon nanowalls and also to catalyst of layer marked on the base material. 
         [0018]    The present invention discloses that characteristics of carbon nanowalls produced by the present invention can be controlled in nanowalls position, space among them, thickness and their size by changing flow of carbon source gas in compared with other non hydrocarbon gases and also by changing temperature and growth time and this leads to invent a method for establishing carbon nanowalls. Characteristics can be controlled by monitoring gas flow, time and temperature. Controlling carbon nanowalls leads to complete capacity of storing hydrogen in fuel cells. 
         [0019]    The present invention discloses that by changing evaluated parameters such as temperature, time, and gas flow and catalyst type and also by changing amount of carbon material to non-hydrocarbon gas, type of carbon nanostructure will be changed. 
         [0020]    Before growing carbon nanowalls, base material is heated and hydrogen (to make radical) is injected into chamber in which there is base material so that there are some places on the base material for connecting carbon nanowalls. This is done for preparing the base material by making porosity on the surface. 
         [0021]    In the present invention, parameters for establishing carbon nanowalls are controlled in accordance with density of radicals produced in reaction chamber. Some examples of controllable conditions based on radical density are speed of feeding by source material, the chamber temperature and ratio of hydrocarbon gas to non-hydrocarbon one. These conditions are controlled foreground based on radical density. Accordingly carbon nanowalls may have effective characteristics. 
         [0022]    In the method, base material (glass) has covered by various catalysts in thin layers in nanometer. Catalyst layers are settled on each other in 2 layers or separately. The present invention discloses a method for producing carbon nanowalls on the glass substrate under atmospheric pressure by CVD method. Metal catalysts cause to produce kind of carbon nanowalls. This method has useful arrangement on the base material (glass). Since 2 dimensional nanostructures (carbon nanowalls) have developed on the glass base material, these have some advantages and can be applied for different demands. Recent invention provides apparatus for establishing carbon nanowalls on the base material which is glass. Experiment is easy and done under atmosphere pressure. Apparatus includes a chamber in which material is radicalized and nanostructures are made and carbon source material and non-carbon materials are entered. Energy source for radicalizing non-hydrocarbon materials and carbon source material is out of chamber and this source leads to heat inside the chamber and to make the radical materials. Before entering into the chamber, materials are mixed together in other one without heat. Additional materials entered into the reaction chamber are driven out under atmosphere pressure. Above mentioned materials are suitable for this method. 
     
    
     
       BRIEF DESCRIPTION OF THE DRAWINGS 
         [0023]      FIG. 1  is a schematic view of an apparatus for coating nano layer on glass substrate. 
           [0024]      FIG. 2  is a schematic view of an apparatus for mixing the gases. 
           [0025]      FIG. 3  is a schematic view of an apparatus for growth carbon nanostructures. 
           [0026]      FIG. 4  is a SEM image of carbon nanostructures, produced in Experiment 6. 
           [0027]      FIG. 5  is a SEM image of carbon nanostructures, produced in Experiment 6. 
           [0028]      FIG. 6  is a SEM image of carbon nanostructures, produced in Experiment 7. 
           [0029]      FIG. 7  is a SEM image of carbon nanostructures, produced in Experiment 7. 
           [0030]      FIG. 8  is a SEM image of carbon nanostructures, produced in Experiment 8. 
           [0031]      FIG. 9  is a SEM image of the carbon nanostructures, produced in Experiment 8. 
           [0032]      FIG. 10  is a SEM image of the carbon nanostructures, produced in Experiment 8. 
           [0033]      FIG. 11  is a SEM image of the carbon nanostructures, produced in Experiment 9. 
           [0034]      FIG. 12  is a SEM image of the carbon nanostructures, produced in Experiment 10. 
           [0035]      FIG. 13  is a SEM image of the carbon nanostructures, produced in Experiment 10. 
           [0036]      FIG. 14  is a SEM image of the carbon nanostructures, produced in Experiment 11. 
           [0037]      FIG. 15  is a SEM image of the carbon nanostructures, produced in Experiment 11. 
       
    
    
     DETAILED DESCRIPTION OF THE INVENTION 
       [0038]    The present invention discloses an apparatus which comprises a radical generator which is used for making heat around the chamber and heat is generated by using an electric oven. There will be radical materials by heating the chamber walls and inside the chamber and by contacting between them and walls and by increasing the energy. For example, H2 which is radical source will be radicalized by contacting with hot walls and with surface of base material covered with metal catalysts. The chamber will be heated up to 300-700° C. especially 500-600. 
         [0039]    In the apparatus, the reaction chamber is along the radical chamber and produced radicals are conducted toward base material covered by carbon nanowalls and then unused materials leave the chamber. Base material will be provided inside the reaction chamber. Given the location, radicalized materials move toward the base material easily and so material will be radicalized and reacted so easily. If carbon nanowalls should be established on a large region, same location and apparatus will be so useful and effective. 
         [0040]    The system has an apparatus for mixing gases in which hydrocarbon and non-hydrocarbon gases are entered into and mixed. After mixing gases, gas mixture leaves the chamber and is conducted to the reaction chamber. 
         [0041]    Amount of radicals (effective for establishing carbon nanowalls), can be controlled by 2 ways. In first one, amount of gas entered to gas mixer and to the reaction chamber should be controlled so we can control amount of radicals. Other way is to control heat of the chamber which cause to heat outside the chamber. It is better to control quantity of radicals by mixing both ways because over increase or decrees of gas and heat leads to change nanostructure and to make getting the carbon nanowalls with useful characteristics difficult 
         [0042]    Speed of feeding by non-hydrocarbon materials or heat used for make radical non-hydrocarbon materials especially Hydrogen and Ammoniac affects on preparing the surface of base material positively. 
         [0043]    The system for growing carbon nanowalls has 2 separate parts of which first one is employed for mixing used gases where there is no heat. This part is applied for entering non-hydrocarbon and hydrocarbon gases into the reaction chamber to be grown. In next part which is attached chamber: hydrocarbon and non-hydrocarbon materials are radicalized, base material and radicals are reacted and carbon nanowalls are made on the base material. In this part, gas inside the chamber and also walls and base material is heated. Entered gases are radicalized in mixture or single. 
         [0044]    If it is aimed to provide the surface of base material (substrate), non-hydrocarbon gas is entered into the system separately. In this case, only non-hydrocarbon gas (H2) is entered into the system and radicalized inside the chamber. After providing the surface, to grow carbon nanowalls, hydrocarbon gas as carbon source and having hydrogen and carbon is entered into the environment along with non-hydrocarbon gases. In this case, given that energy of ionization and of making hydrogen radical is more than H2, before ionization of H2 and making hydrogen radical, hydrocarbon gas is ionized and radicals C are produced. To make suitable medium and to dilute it for getting carbon nanowalls with suitable structure and characteristics, other non-hydrocarbon gas as well as H2 including Nitrogen and Hydrogen are employed. Accordingly, presence of Nitrogen radicals (N) and Hydrogen radicals (H) causes to dilute the medium and to avoid oxidation and to form carbon nanowalls with useful properties. 
         [0045]    Radical gases along with non-radical gases are passed through the reaction chamber located on the middle of the chamber and then non-reacted gases leave the chamber so there is always fresh gas in the chamber. 
         [0046]    Other part of invention is related to put the metal catalysts on the base material (glass). 
         [0047]    To put the metal catalyst on the glass as the base material, the system works based on plasma in which the base material will be prepared for growing carbon nanowalls. 
         [0048]    This system has a chamber in which there are 2 concentric cylinders. Internal solid one is applied as cathode and external hollow one as anode. 
         [0049]    Materials should be isolated from the cathode and put on the base material. After cleaning, the base material is settled on the anode inside the system and then prepared for marking the layer. At same time we decrease the system to low pressure so that there are no disruptive materials in the chamber. 
         [0050]    To create plasma in the medium for marking the layer of metal material as catalyst on the base material, we enter desired gas into the system. The gas for establishing plasma may be Ar or N2, but mixture of both gases are not applied. 
         [0051]    Plasma generator in same system is to apply direct current (D.C) by which plasma is made. To homogenize the plasma in desired region where there is base material, a coil cylinder is used as magnetic field generator. 
         [0052]    Homogenizing the plasma in same region where there is base material leads to increase density of radicals so contact between radicals and target will be increased. In this case, layer of metal material on the surface of base material will be marked with optimum thickness and characteristics. 
         [0053]    Cathodes applied as a target for marking the layer of metal materials on the base material can be Cu and Al but mixture and alloy of same metals are not used. 
         [0054]    To make the layer of catalysts and to have a base material on which there are 2 catalyst layers, this system is reused after marking the layer of first metal material. 
         [0055]    After marking the layer, first metal layer of target (cathode) is changed and it is done again so that we have a base material with 2 alternative catalyst layers. 
         [0056]    Research and priorities of recent invention will be descry substrate. These technical subjects are same as claims so these are reported together. 
         [0057]    All kinds of variables related to carbon source material can be employed for producing carbon nanowalls. One material including carbon can have other elements such as Hydrogen, Fluorine, Chlorine, Bromine, Oxygen and Nitrogen as well as carbon. Here, source material including carbon and Hydrogen has selected in which ratio of carbon to hydrogen is equal and C2H2 is chosen as source material. Compounds may be linear, branched and circular and now C2H2 is linear. Source gas is used and entered into mixer under normal temperature. This compound can be used in mixture or separately and now it is employed along with non-hydrocarbon gases so that carbon nanowalls can be grown optimally and with suitable parameters. 
         [0058]    A good and effective source for making hydrogen radicals is to apply compounds having hydrogen so H2 is used as a source with only hydrogen and also NH3 with hydrogen and nitrogen. These compounds may be employed in mixture or separately. Separate one is applied to prepare the surface of base material for growing carbon nanowalls and also mixed one to dilute the medium and avoid oxidation of carbon nanowalls and get desired structure in structural parameters (for example thickness, length and height). 
         [0059]    In this method, to establish carbon nanowalls, source material of H production is entered into the system lonely and becomes radical. These radicals contact to the base material inside the chamber and prepare the surface of base material for growing carbon nanowalls. 
         [0060]    In this method, materials in determined quantity are entered into the chamber to be mixed together. In same chamber, there is no heat and terms and parameters will not be changed. Then there are entered into the reaction chamber to become radical. In the reaction chamber, there are carbon radical materials as well as radicals H and N. carbon caused by radical mixture is connected to the base material and produces carbon nanostructures. 
         [0061]    The base material in this invention is glass and it as catalyst covers metal materials. In accordance with the method, carbon nanowalls can be grown on the metal layer. Used catalysts may be Al, Fe or Cu or thin layer. Also these thin layers can be settled on the base material in 2 layers led by different catalysts. Applying each one of metal materials as catalyst can affect on characteristics of carbon nanowalls and suitable growth of carbon nanowalls. Also using same metal nanolayers settled on each other and their location affects on optimum growth of carbon nanowalls positively. 
         [0062]    In the method, different gases have used to make plasma on the base material and may be Ar or N2. Changing kind of plasma gas can affect on carbon nanowalls structure and also optimizing effective parameters of carbon nanowalls such as length, thickness and width positively. 
         [0063]      FIG. 1  shows an apparatus for marking the layer of metal materials (catalyst) on the base material. Apparatus  1  includes operation chamber  1  covered with 2 metal plates  2  and  3 . There are 2 cylinders as cathode  5  and anode  4  inside it; and anode  4  and cathode  5  is hollow and larger cylinder and solid and smaller one respectively. 
         [0064]    In apparatus  1 , cathode  5  is connected to electric power source  12  by a base and anode  6  to the ground. Anode and cathode  5  are 2 concentric cylinders located on the reaction chamber  1 . A coil of magnetic field generator  8  covers around the reaction chamber  1  and connects to electric feeding source  13 . Electric power source  12  is applied for cathode wire  5  and anode  4  to make voltage about 900 v and on the other hand magnetic field  5  around the reaction chamber  1  connects to electric source  13  to make magnetic field  400 . 
         [0065]    In apparatus No  1 , cathode  5  and anode  4  are 2 cylinders with length of 200 mm. anode  4  and cathode  5  are external and hollow cylinder with diameter of 100 mm and internal and solid one with 30 nm respectively. Space between anode  4  and cathode  5  is about 35 mm. while making plasma  11 , there is current as much as 120 mA between anode  4  and cathode  5 . 
         [0066]    The reaction chamber  1  covered by 2 flat plates  2  and  3  is drained by channel  10  connected to vacuum system and materials leave the reaction chamber  1  through path  15  to make primary pressure 10-s torr. Then desired gas Ar or N2 is entered into the apparatus  1  through channel  9  located on the top of the reaction chamber and the middle of upper plate  2 . This gas is entered into space between 2 cylinders (anode  4  and cathode  5 ) through channel  9  and this continues to reach pressure 0.03 torr. In this case, there will be current 120 mA between anode  4  and cathode  5  by making voltage about 90 volts. 
         [0067]    In apparatus No  1 , base material  6  (substrate) is settled on the anode  4  in the space between anode  4  and cathode  5 . Base material  6  is so settled that its upper part is toward cathode  5 , base material  6  (substrate) is made of microscopic glass in dimension of 10 mm×10 mm×0.9 mm. Before putting base material  6  in apparatus No  1 , it is cleaned by such solvents as Ethanol, Acetone and water without ion and by using ultrasonic waves during 10 minutes. 
         [0068]    In apparatus No  1 . By making voltage 900 V for cathode  5  and by making plasma  11  in the region between anode  4  and cathode  5  during 3 minutes, there will be current 120 mA. At same time, metal materials on the cathode  5  are removed and settled on the base material  6  which is located on the anode  4 . 
         [0069]    In this invention, to mark the layer of different metal materials, anode  4  and cathode  5  is applied. Therefore in apparatus No  1 , anode  4  and cathode  5 , Fe, Cu, and Al are applied. The layer of each one of metal materials is marked on the base material  6 . 
         [0070]    To get base material  6  (substrate) with 2 different layers, layer of metal materials (catalyst) is marked for two times. In this case, on the base material  6  (substrate) made of glass, metal layer as catalyst is marked and then by applying apparatus No  1  and by changing anode  4  and cathode  5  second layer on the first one is marked. Second layer of metal materials is different from previous one. At same time, layer of different metals such as Al, Fe, and Cu is marked. So we have six base materials (substrate) which have marked in two layers (Cu—Al-glass, Cu—Fe-glass, Al—Cu-glass, Fe—Cu-glass, and Fe—Al-glass). So there will be nine marked base materials as well as metal materials. 
         [0071]    In this invention, to mark the layer of metal materials on the base material  6 , a blank will be made between anode  4  and cathode  5  through which Ar and or N2 is entered into the reaction chamber  1 , on the other word, marking the layer of metal materials on the base material  6  has been done in plasma  11  Argon for one time and in plasma  11  nitrogen for other one. Accordingly, we will have two base materials  6  covered with metal materials as catalyst of which one has marked in the presence of plasma Ar and other in the presence of plasma N2. 
         [0072]    In this invention, to grow carbon nanowalls, used hydrocarbon gases as carbon source and non-hydrocarbon as diluting gases are mixed together inside the apparatus No.  2  so that these are entered into apparatus No.  3  to growing carbon nanostructures. 
         [0073]      FIG. 2  shows a set for mixing gases before entering into special carbon nanostructure set composed of a cylinder chamber  16 . In this chamber, there is no thermal and chemical operation. Gases are entered into mixer chamber  16  through special pores  17 ,  18 ,  19 , and  27 . Gases are entered into the mixer chamber through special pores  17 ,  18 ,  19 , and  27 , also through paths  23 ,  24 ,  25 , and  28 . 
         [0074]    In the mixer chamber  16 , there are 3 porous plates  21  on which there are many tiny pores  22  so that gases entered through special pores  17 ,  18 ,  19 , and  27  are mixed together in small quantity and then by leaving the mixer chamber  16  through special pore  20 , there are mixed completely. Path of entered gases  23 ,  24 ,  25 , and  28  is so that these are contacted together mutually to be mixed together. Porous plates  21  with many tiny pores help the mixture. 
         [0075]    Apparatus No.  2  just mix hydrocarbon gases (C2H2) and non-hydrocarbon gases (H2 and NH3) which are entered into the mixer chamber  16  through special pores  17 ,  18 ,  19 , and  27 ; and gases leave the chamber in mixture C2H2/NH3/H2 thorough special pore  20 . If the surface of base material  6  is prepared inside the apparatus No  3 , only one or two kinds of gas (NH3 and H2) are entered into apparatus No.  2 . In first one, only one gas (H2) is entered and in second, two gases (NH3 and H2) are entered into apparatus No.  2  and the mixer chamber  16 . So mixture of gases NH3/H2 leaves the chamber thorough special pore  20  after mixing in the mixer chamber  16 . In the mixer chamber  16 , apparatus No.  2  is under atmospheric pressure, in other word there is no vacuum. 
         [0076]    In this invention, to grow carbon nanostructures, apparatus No.  3  is applied. Apparatus No.  3  includes main chamber  31  as quartz cylinder in diameter of 10 cm and length of 100 cm. Both sides of main chamber  31  have blocked by two cup flanges  30  and  36 . At the middle of each flanges  30  and  36 , there is special pore  29  and  37 . Both sides of main chamber  31  have covered by flanges  30  and  36  and there is no pore except two special ones  29  and  37 . 
         [0077]    In apparatus No.  3 , around main chamber  31  is covered by a covering  32  made of ceramic and thermal insulation. Between ceramics and near the main chamber  31 , there are thermal elements  33  for heating the wall and space inside the main chamber  31 . Thermal elements  33  work with electric current and their temperature is controlled by a controller  43 . 
         [0078]    Base material  6  is settled into a ceramic boot  38  which is movable and can be removed by opening one of flanges  30  and  36  and then base material is located into it. One or more base materials  6  (substrate) can be settled inside the ceramic boot  38 . 
         [0079]    Apparatus No.  3  has made so that it can produce most temperature and heat caused by thermal elements  33  in central part and at the middle of main chamber  31 . Insulated part and ceramics cause that heat is not penetrated out of body. 
         [0080]    To grow carbon nanostructures (carbon nanowalls), two main operations are done inside the main chamber  31 . First phase of preparing the base material  6  is second phase of growing carbon nanowalls on the base material  6 . First phase is performed by using one non-hydrocarbon gas or two non-hydrocarbon gases and second one by diluted hydrocarbon gases. 
         [0081]    Gas is entered into main chamber  31  through path  39  connected to apparatus No  2 . In path  39 , there is no temperature change for gas and this gas is same one excluded from apparatus No  2 . In path  40 , gas is warmed by heat caused by thermal elements  33 . Gas reaches the heating and radical region  35  through path  40  where gas is heated as much as possible and begins to make radical, then it is entered into the reaction region  34 . In this region, there is highest heat. Ceramic boot  38  in which there is base material  6  is put in the reaction region  34 . In same region, radicalized and also heated gases contact the surface of base material  6 . Then gases which not react with the surface of base material  6  went to path  41  along with main chamber  31 . In path  41 , gases loss their heat. Path  41  in located on the main chamber  31  and back of flange  36 . Finally gases leave the chamber through special pore  37  and path  42 . Gas excluded from the path  42  is cooled and non-radicalized one. 
         [0082]    In apparatus No.  3 , in first phase, the surface of base material  6  inside the ceramic boot  38  is prepared by using non-hydrocarbon gases. Accordingly at the first, base material  6  is put into ceramic boo  36 , then ceramic boot  38  is settled at the middle of main chamber  31  and then flanges  30  and  36  are blocked. Then to exclude air inside the main chamber, Argon gas with current 100 sccm is entered into main chamber  31  through path No  39  and  40  and also pore  29  under temperature of 20° C. Air leaves the main chamber  37  through path  41 ,  42  and also pore  37 . Main chamber reaches temperature of 300° C. by using thermal elements  33 . When temperature of main chamber  31  is 300° C., non-hydrocarbon gas (H2) enters into the main chamber  31 . Gas H2 with current 100 sccm is entered into apparatus No.  2  and then into the main chamber  31  through path  39  and  40  and special pore  29  and is heated inside the main chamber  31  up to 300° C. and passes on the base material  6 . At same time, the surface of base material  6  contacts with molecules H2 heated up to 300° C. and will be prepared. Then gas is cooled through path  41  and excluded through path  42 . Gas H2 with current 100 sccm is entered into the chamber during 30 minutes and the main chamber  31  reaches 500° C. for 30 minutes. Non-hydrocarbon gases (N2 and NH3) are mixed by apparatus No.  2  and entered into the main chamber  31  through path  39  and  40  and also pore  29 . Gas NH3 with current 100 sccm and gas H2 with current 100 sccm is entered into apparatus No.  2  and mixed together. This mixture is entered into apparatus No.  3  and heated inside the main chamber  31 . Mixture of NH3 and H2 is heated in the heating and radicalizing region  35  and there will be radicals and then in the reaction region  34 , heated radicals and molecules are put on the surface of base material  6  and contact with each other inside the ceramic boot  38  to provide the surface for growing carbon nanowalls. Then hot and non-reacted gases are cooled through path No  41  and leave the main chamber through path  42  and pore  37 . 
         [0083]    By applying apparatus No.  3  in second phase, carbon nanostructures are grown on the surface of base material  6 . Then Argon gas with current of 100 sccm in entered into apparatus No.  2  and the main chamber  31  through path  39  and  40  and also through pore of  29  respectively. This gas is applied to exclude non-hydrocarbon gases caused by previous phase inside the apparatus No.  2  and main chamber No.  3 . Then the reaction chamber reaches 600° C. by using thermal elements  33  and so operation continues under 500° C. for 30 minutes. Hydrocarbon gas (C2H2), H2 and NH3 are entered into apparatus No.  2  as much as 20 sccm, 100 sccm and 80 sccm respectively and then these leave the chamber through path  26  and pore  20  and enter into the main chamber  31  through path  39  and  40  and also pore  29 . As gas mixture NH3/H2/C2H2 enters into the main chamber  31 , this mixture is heated in the heating and radicalizing region  35  and so there will be radials. Then in the reaction region  34 , mixture of gases makes radical as much as necessary and contacts with the surface of base material  6  located inside the ceramic boot  38 . Carbon radicals in regions  34  react with the surface of base material  6  covered with metal materials. Next, non-reacted and hot gases move to path  41  and radicals are mixed together and gases are cooled and then there leave the main chamber  31  through path  42  and pore  37 . In region  34 , radicals react with the surface of base material  6  under 600° C. during 45 minutes. After 45 minutes, flow of C2H2 and H2,NH3 is blocked and electricity is decreased and stopped by controller of current  43  which controls electric current of thermal elements  33  so that main chamber  31  begins to cool. In this case, Argon gas with current of 100 sccm is entered to apparatus No.  2  through a source and then to apparatus No.  3  to exclude all reminded gases. This gas will be existed to reach 200° C. Then the flow of Argon is blocked and base material  6  inside the ceramic boot  38  is grown and leaves the chamber by reaching ambient temperature. 
         [0084]    Now experiments performed in this invention are descry substrate: it should be noted that these experiments are based on two separate techniques of which first one is related to mark the layer of metal catalysts on the base material  6  as nanolayers and second is related to prepare and grow carbon nanostructures on the base material  6 . The base material  6  goes to apparatus No.  3  by apparatus No.  1  after marking the layer. So at the first we define experiments performed by apparatus No.  1  for marking the layer of catalyst on the base material and then describe experiments of growing the carbon nanostructures by using apparatus No.  3 . 
         [0085]    Experiment 1: This experiment aims to mark the layer of catalyst aluminum (Al) on the glass base material  6  which is done by apparatus No.  1 . In this experiment, base material  6  (substrate) is cleaned by using acetone, alcohol and distilled and deionized water for 10 minutes in ultrasonic bath to remove all impurities. Then base material  6  are settled in apparatus No.  1  on the anode  4  and cathode  5  iron is located on itself place. Then the chamber is blocked by using two flanges  2  and  3 . The set will be prepared to make plasma. To do it, at the first, there should be the vacuum in the chamber  1  up to 10 −5  torr and then to make plasma and ionized gases, Argon gas (Ar) is entered into the system through pore  9  and path  14  to reach the chamber&#39;s vacuum 0.03 torr. In this case, to concentrate the plasma in the plasma making region  11 , there will be a field by using magnetic field  8  arranged by source  13 . At same time, cathode  5  receives voltage by source  12  during 3 minutes and current 200 mA will be made. After 3 minutes, the system will be turned off and base material  6  on which there is layer of catalyst is removed. 
         [0086]    Experiment 2: this is same as experiment 1 except for using cathode  5  Iron (Fe) instead of using cathode  5  Iron. 
         [0087]    Experiment 3: in this experiment like experiment 1, same system is applied except for marking the second layer on the base material  6  to have the base materials  6  with two different catalyst layers. So base material  6  marked by iron is settled in apparatus No.  1  and then we continue operation same as experiment 1 to have the base material  6  with two different layers therefore we will have the base material  6  with two nano-layers (aluminum layer on the iron layer) in the presence of argon gas. 
         [0088]    Experiment 4: In this experiment like experiment 2, same system is applied except for marking the second layer on the base material  6  to have the base materials  6  with two different catalyst layers. So base material  6  marked by Aluminum is settled in apparatus No.  1  and then we continue operation same as experiment 2 to have the base material  6  with two layers therefore we will have the base material  6  with two nano-layers (iron layer on the aluminum layer) in the presence of argon gas. 
         [0089]    Experiment 5: this is same as experiment 1 except for using Nitrogen gas instead of Argon to make plasma. 
         [0090]    Experiment 6: in this process, carbon nanowalls are grown and acetylene and hydrogen and ammonia gases are employed as carbon source and non-hydrocarbon gases respectively to make the surface ready and also to dilute hydrocarbon gas. In this experiment, growing the carbon nanowalls on the base material  6  covered by Iron (experiment 2) as catalyst is studied by using apparatus No.  3 . Temperature for growth and preparing the surface is 600° C. and 300-500° C. respectively. In this experiment, at the first, base material  6  is settled in a ceramic boot  38  and then conducted to the reaction chamber  31  so that it is located at the middle of reaction chamber  31  in reaction region  34 . Then flanges ( 30  and  36 ) of the reaction chamber  31  should be blocked and joint between apparatus No.  2  and No.  3  be connected to pore  29  of No.  3  through pore  20  of apparatus No.  2 . Then joint of hydrocarbon and non-hydrocarbon gases is connected to the gas source through pores  17 ,  18 ,  19 ,  27  and  20  of apparatus No.  2  and also excess gas is removed through pore  29  of apparatus No.  3 . After installing joints, at the first Argon gas with 200 sccm gas is entered into the chamber  16  of apparatus No.  2  through pore  27  and path  22 . Gas is entered into the reaction chamber  31  through pore  29  and paths No  26 ,  39  and  40  to exclude air of the reaction chamber  31 . Finally this gas leaves the reaction chamber  31  through paths  41  and  42 . At same time temperature of reaction is 20° C. In next phase, faucet of Argon gas should be closed and of Hydrogen be opened so that hydrogen with current 100 sccm is entered into the chamber  16  of apparatus No.  2  through pore  18  and path  24  and also into the reaction chamber  31  of apparatus No.  3  through pore  29  and paths  26 ,  39  and  40 . Now temperature inside the reaction chamber  31  reaches 300° C. by using electric source  43  and also thermal elements  33  located in a thermal insulation  32  around the reaction chamber  31 . Hydrogen gas with current 100 sccm is entered into the reaction chamber  31  and heated in the heating and radicalizing region  35  and then entered into the region  34 . In the region  34 , hydrogen contacts with the surface of base material  6  covered with metal nanolayers as catalyst and these operations are done under temperature 300° C. with current 100 sccm of H2 gas for 30 minutes. 
         [0091]    Excess gas is removed through paths  41  and  42  and also pore  37 . At the end, faucet of ammonia gas is opened and ammonia gas with current 100 sccm is entered into the chamber  16  of apparatus No.  2  through pore  17  and path  25  and mixed by passing through netted plates  21  and finally mixture of gas H2/NH3 with current 100/100 sccm leaves the apparatus No.  2  through pore  20  and path  26  and enters to the reaction chamber  31  through pore  29  and paths  39  and  40 . As mixture of gas NH3/H2 enters into the reaction chamber  31 , it is heated in the heating and radicalizing region  35  and radicals will be produced. In the reaction region  34 , quantity of radicals is increased and contact with metal nanolayers as catalyst and make the surface ready for next processes. This operation with mixture of gas 100/100 sccm NH3/H2 continues under 500° C. for 10 minutes. Excess gas leaves the reaction chamber  31  through paths  41  and  42  and also pore  37 . At the end, faucet of ammonia gas and hydrogen should be closed and of argon be opened again so that argon is entered into apparatus No.  2  and No.  3  same as first process, but there is a difference: in this phase, argon gas and temperature of the reaction chamber  31  and time is 100 sccm and 500° C. and 10 minutes respectively. In next phase (growing the carbon nanostructures), faucet of Argon gas is closed and of C2H2 is opened so that C2H2 with current 20 sccm is entered into the chamber  16  of apparatus No.  2  through pore  19  and path  23 . At the same time, H2 with current 100 sccm and ammonia with current 80 sccm is entered into the chamber  16  of apparatus No.  2  through pores  18  and  17  and also paths  24  and  25  respectively. C2H2 and H2 and NH3 with current 20, 100 and 80 sccm are entered into the chamber  16  of apparatus No.  2  and are mixed together by passing through netted plates  21 . Mixture of gases C2H2/NH3/H2 with current 20/80/100 Sccm is removed through pore  20  and path  26  and entered into the reaction chamber  31  of apparatus No.  3  through pore  29  and paths  39  and  40 . After entering mixture of gases into the reaction chamber  31 , it will be heated in the heating and radicalizing region  35  and then goes to the reaction region  34 . This leads to make so radicals contacted with the surface of base material  6  covered with metal nanolayers as catalyst. Carbon radicals caused by C2H2 contact together on the base material  6  and cause to make carbon nanostructures. Excess gases and radicals leave the reaction chamber  31  of apparatus No.  3  through paths  41  and  42  and also pore  37 . This operation is done with gas current 20 sccm for C2H2, 80 sccm for ammonia and 100 sccm for Hydrogen under 600° C. and for 45 minutes. At the last phase, faucet of C2H2, NH3 and H2 is closed and temperature is decreased by using electricity controller. In this case, after closing faucet of gases, argon with current 100 sccm is entered into the reaction chamber until temperature of the reaction chamber reaches 20° C. Then we bring the sample out of reaction chamber  31  and ceramic boot  38 . 
         [0092]    After testing the processes related to carbon nanostructure growth, to identify carbon nanostructures in this experiment, Scanning Electron Microscopy (SEM) has used whose pictures are offered in  FIGS. 4 ,  5 . Theses nanowalls have grown vertically and in two dimensional surfaces. 
         [0093]    Experiments 7: these are same as experiment 6 but there is a difference: in experiment 6, the base material  6  covered with iron nanolayer in the presence of argon (experiment 2) is used as catalyst on the substrate  6  for growing carbon nanostructures; but in next ones, base materials  6  covered with two different nano-layers aluminum layer on the iron layer (experiments 3) as catalyst are applied. 
         [0094]    After testing the processes related to carbon nanostructure growth, to identify carbon nanostructures in each experiment, Scanning Electron Microscopy (SEM) has used whose pictures are offered in  FIGS. 6 ,  7 . Theses nanowalls have grown vertically and in two dimensional surfaces. 
         [0095]    After performing primary processes related to grow and identify substrates  6  covered with suitable catalyst, suitable catalysts are selected to grow carbon nanowalls. These substrates will be tested so that we can identify parameters affecting on the growth. These parameters are special for studying growth temperature, time, and carbon source gas flow. 
         [0096]    Experiment 8, 9: in this experiment, changing of the growing temperature is studied. All growth parameters and experiment processes are same as experiment 6 and just growth temperature of carbon nanostructures has increased from 600 to 700° C. Substrates  6  covered with suitable catalyst have selected among experiments 1-5. In this experiment, substrate  6  covered with aluminum nanolayer (experiment 1) and two nanolayers iron on aluminum (experiment 4) has applied as catalyst. 
         [0097]    After testing the processes related to carbon nanostructure growth, to identify carbon nanostructures in each experiment, Scanning Electron Microscopy (SEM) has used whose pictures are offered in  FIGS. 8-11 . Theses nanowalls have grown vertically and in two dimensional surfaces. 
         [0098]    Experiment 10: in this experiment, changing of the growing time is studied. All growth parameters and experiment processes are same as experiment 6 and just growth time of carbon nanostructures has increased from 45 to 60 minutes. Substrates  6  covered with suitable catalyst have selected among experiments 1-5. In this experiment, substrate  6  covered with iron nanolayer (experiment 2) has applied as catalyst. 
         [0099]    After testing the processes related to carbon nanostructure growth, to identify carbon nanostructures in each experiment, Scanning Electron Microscopy (SEM) has used whose pictures are offered in  FIGS. 12 ,  13 . Theses nanowalls have grown vertically and in two dimensional surfaces. 
         [0100]    Experiment 11: in this experiment, changing of the hydrocarbon gas flow is studied. All growth parameters and experiment processes are same as experiment 6 and just hydrocarbon gas flow has increased from 20 to 48 sccm. Substrates  6  covered with suitable catalyst have selected among experiments 1-5. In this experiment, substrate  6  covered with aluminum nanolayer (experiment 5) has applied as catalyst. 
         [0101]    After testing the processes related to carbon nanostructure growth, to identify carbon nanostructures in each experiment, Scanning Electron Microscopy (SEM) has used whose pictures are offered in  FIGS. 14 ,  15 . Theses nanowalls have grown vertically and in two dimensional surfaces. 
         [0102]    Items offered in this invention are considered as examples and this invention is not limited to same examples. Recent invention includes substrates  6  covered with different metal materials as catalyst and also applying hydrocarbon gas as carbon source gas and using different gases or combination of gases to male plasma of apparatus No  1 . In this invention, plasma has not used to grow carbon nanowalls and nanostructures. In this invention, base material  6  is microscope glass; and carbon nanostructures are grown under atmosphere pressure and vacuum has not employed. 
         [0103]    This invention includes a simple method to grow carbon nanowalls and applying catalyst characteristics of nanolayers with different metals and also using various parameters. 
         [0104]    The invention has been described in connection with its preferred embodiments. However, it is not limited thereto. Changes, variations and modifications to the basic design may be made without departing from the inventive concepts in this invention. In addition, these changes, variations and modifications would be obvious to those skilled in the art having the benefit of the foregoing teachings. All such changes, variations and modifications are intended to be within the scope of the invention which is limited only by the following claims.
A method for growing carbon nanowalls on a base material is disclosed. The method comprises mixing a predetermined amount of a hydrocarbon gas with a predetermined amount of at least one non hydrocarbon gas; placing said base material in a reaction chamber having a first portion and a second portion, first portion is extended from a first end of reaction chamber to first end of base material; creating a radical in reaction chamber which comprises a hydrocarbon radical and a non hydrocarbon radical; applying the radical to the base material; and growing carbon nanowalls on said base material based on said hydrocarbon radical.