BACKGROUND OF THE INVENTION 
       [0001]    The present invention relates to a semiconductor device equipped with a protection circuit for protecting an integrated circuit block from a electrostatic discharge (ESD). 
         [0002]    With the recent widespread use or the like of mobile devices, there has been an increasingly growing demand for a reduction in power consumption with respect to a semiconductor device. This is because the mobile devices use a rechargeable built-in battery or a dry battery or the like as a drive source or power supply. Suppressing charging and the required frequency of replacement of the dry battery low (i.e., prolonging battery life) becomes an important factor to enhance the commercial value of the mobile device. 
         [0003]    As one factor for increasing power consumption of the semiconductor device, there exists a leak current flowing through each of transistors or diodes that constitutes an integrated circuit. The leak current is of a current that flows when the transistor or diode is in an off state or a reverse-biased state. It is desirable that in order to suppress the power consumption, each of the elements lying in the integrated circuit is so designed that the leak current is kept as small as possible. 
         [0004]    As one method for reducing the leak current, there is known a method for suppressing a source voltage low. In a technique described in, for example, a patent document 1 (Japanese Unexamined Patent Publication No. Hei 6(1994)-5871), depressions and projections are formed in side faces of a floating gate to allow electric charges to concentrate, thus making it possible to reduce a write voltage/erase voltage of a nonvolatile memory, whereby power consumption of a memory device can be suppressed. Since, however, the number of elements of the semiconductor device is numerous, a leak current becomes a large value as the entire integrated circuit even though the value per element is negligible. Even though a leak current per element is a trillionth (1×10 −12 ) ampere where, for example, the number of elements in the integrated circuit is a million (1×10 6 ), the sum of leak currents reaches a millionth (1×10 −6 ) ampere. There is also a possibility that this leak current value will be innegligible depending upon the specs of the mobile device and will bring no commercial value. Thus, it is not possible to keep the leaks current small sufficiently where the source voltage is simply reduced. 
         [0005]    On the other hand, there has been known a technique for dividing an integrated circuit into a plurality of blocks and supplying a source voltage to the driven block alone, thereby reducing a leak current. According to the technique, no leak current is generated because the undriven blocks are not supplied with the source voltage. Thus, the leak current at the entire semiconductor device can greatly be reduced. 
         [0006]    Here, the integrated circuit includes, in many cases, the blocks which may be driven only upon the use of their corresponding functions, and the block which needs to be always driven. When the constantly driven block is contained therein, a reduction in the circuit scale of the constantly driven block where practicable is also effective in reducing power consumption. 
         [0007]    However, a new drawback arises in that when a small-scale integrated circuit block is constituted of elements small in leak current, it becomes easy to cause an ESD damage of each element. 
         [0008]    As the technology of preventing a transistor&#39;s ESD damage, there has been known a technique described in, for example, a patent document 2 (Japanese Unexamined Patent Publication No. Hei 9 (1997)-260504). In the technique disclosed in the patent document 2, the gate length of both end of every transistors are made longer than the gate length of its central portion to prevent electric field concentration, thereby preventing the ESD damage. However, the present technique is insufficient as the technique of preventing the ESD damage of the integrated circuit because a surge current per se cannot be reduced. 
         [0009]    In contrast to this, there has been proposed a method of providing a protection circuit to prevent an ESD damage of each element that constitutes an integrated circuit block.  FIG. 12  is a circuit diagram schematically showing a configuration of an integrated circuit having a protection circuit. As shown in  FIG. 12 , an internal circuit (e.g., the above constantly driven circuit)  1210  and a protection circuit  1220  are connected in parallel between a source line  1230  and a ground line  1240 . While a MOS (Metal Oxide Semiconductor) transistor or a PN junction diode can be used as the protection circuit  1220 , a GGNMOS (Gate Grounded NMOS)  1221  is used in the example of  FIG. 12 . Providing the protection circuit  1220  makes it possible to prevent an electrostatic surge. 
         [0010]    However, a drawback arises in that when the protection circuit  1220  is provided, leak currents of elements constituting the protection circuit  1220  are generated, thereby increasing a leak current of the integrated circuit. When, for example, the protection circuit  1220  is constituted of the MOS transistor, a subthreshold current becomes a leak current. When the protection circuit  1220  is constituted of the PN junction diode, a junction leak current becomes a leak current. On the other hand, when the protection circuit  1220  is so designed that the leak current is reduced, the effect of preventing the electrostatic surge is impaired. 
       SUMMARY OF THE INVENTION 
       [0011]    An object of the present invention is to provide a semiconductor device capable of preventing an electrostatic surge without increasing a leak current. 
         [0012]    According to one aspect of the present invention, for attaining the above object, there is provided a semiconductor device which comprises an internal circuit connected to first and second source lines and a protection circuit connected to the first and second source lines to protect the internal circuit. 
         [0013]    The protection circuit has a protection transistor which includes first high-concentration impurity regions each connected to the first source line, second high-concentration impurity regions each connected to the second source line, and control electrodes which have first control electrodes each having a first gate length and second control electrodes each having a second gate length longer than the first gate length, both of the first and second control electrodes being formed integrally, and which are connected to the second source line. The protection transistor includes first transistor structural portions each having the first high-concentration impurity region, the second high-concentration impurity region and the first control electrode, and second transistor structural portions each having the first high-concentration impurity region, the second high-concentration impurity region and the second control electrode. 
         [0014]    According to the present invention, a first transistor structural portion short in gate length can ensure a response of a protection circuit to an electrostatic surge, and a second transistor structural portion long in gate length can suppress an increase in leak current. 
     
    
     
       BRIEF DESCRIPTION OF THE DRAWINGS 
         [0015]    While the specification concludes with claims particularly pointing out and distinctly claiming the subject matter which is regarded as the invention, it is believed that the invention, the objects and features of the invention and further objects, features and advantages thereof will be better understood from the following description taken in connection with the accompanying drawings in which: 
           [0016]      FIG. 1  is a circuit block diagram showing an essential configuration of a semiconductor device according to a first embodiment; 
           [0017]      FIG. 2  is a plan view conceptually showing a layout structure of the semiconductor device according to the first embodiment; 
           [0018]      FIG. 3  is a plan view showing, in enlarged form, the layout structure of the semiconductor device according to the first embodiment; 
           [0019]      FIG. 4  is a imaginable graph illustrating a current-voltage characteristic of the semiconductor device according to the first embodiment; 
           [0020]      FIG. 5  is a plan view conceptually showing a layout structure of a semiconductor device according to a second embodiment; 
           [0021]      FIG. 6  is a plan view showing, in enlarged form, the layout structure of the semiconductor device according to the second embodiment; 
           [0022]      FIG. 7  is a plan view conceptually showing a layout structure of a semiconductor device according to a third embodiment; 
           [0023]      FIG. 8  is a plan view showing, in enlarged form, the layout structure of the semiconductor device according to the third embodiment; 
           [0024]      FIG. 9(A)  is a plan view showing, in enlarged form, a layout structure of a semiconductor device according to a fourth embodiment; 
           [0025]      FIG. 9(B)  is a conceptual diagram illustrating the principle of the semiconductor device; 
           [0026]      FIG. 10(A)  is a plan view depicting, in enlarged form, a layout structure of a semiconductor device according to a comparative example of the fourth embodiment; 
           [0027]      FIG. 10(B)  is a conceptual diagram showing the principle of the semiconductor device; 
           [0028]      FIG. 11(A)  is a plan view showing, in enlarged form, a layout structure of a semiconductor device according to a fifth embodiment; 
           [0029]      FIG. 11(B)  is a conceptual diagram showing the principle of the semiconductor device; and 
           [0030]      FIG. 12  is a block diagram illustrating an example of an essential configuration of a prior art semiconductor device. 
       
    
    
     DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS 
       [0031]    Preferred embodiments of the present invention will hereinafter be described with reference to the accompanying drawings. Incidentally, the size, shape and physical relationship of each constituent element in the figures are merely approximate illustrations to enable an understanding of the present invention, and further the numerical conditions explained below are nothing more than mere examples. 
       First Preferred Embodiment 
       [0032]    A semiconductor device according to a first embodiment of the present invention will first be explained using  FIGS. 1 through 4 . 
         [0033]      FIG. 1  is a circuit block diagram showing an essential configuration of the semiconductor device according to the present embodiment.  FIG. 2  is a plan view conceptually showing a layout structure of a circuit block shown in  FIG. 1 . 
         [0034]    As shown in  FIG. 1 , the semiconductor device  100  according to the present embodiment has an internal circuit  110 , a protection circuit  120 , a source line  130  and a ground line  140 . 
         [0035]    In  FIG. 1 , the internal circuit  110  is of an integrated circuit for implementing some functions of the semiconductor device  100 , for example, the above constantly driven circuit. The internal circuit  110  is connected to the source line  130  and the ground line  140 .  FIG. 2(A)  is a plan view schematically showing a layout configuration example of the internal circuit  110 . As shown in  FIG. 2(A) , a plurality of PMOS transistors each including a P type source region  112 , a P type drain region  113  and a gate electrode  114  are formed in an N type region  111 . A plurality of NMOS transistors each including an N type source region  116 , an N type drain region  117  and a gate electrode  118  are formed in a P type region  115 . The source regions  112  and  116 , the drain regions  113  and  117  and the gate electrodes  114  and  118  are respectively wired by wiring patterns  119 . In the present embodiment, the wiring widths (i.e., gate lengths of PMOS and NMOS transistors) of the gate electrodes  114  and  118  are all the same value L 1 . 
         [0036]    In  FIG. 1 , the protection circuit  120  is an integrated circuit for protecting the integrated circuit block from a surge current. As shown in  FIG. 1 , the protection circuit  120  has one protection transistor  121 . The protection transistor  121  is of an NMOS structure. The protection transistor  121  is connected to the source line  130  at the drain D thereof and connected to the ground line  140  at the source S and gate G thereof. A substrate potential B is applied to the protection transistor  121 .  FIG. 2(B)  is a plan view conceptually showing a layout configuration example of the protection circuit  120 .  FIG. 3  is an enlarged view of a portion indicated by symbol A in  FIG. 2(B) . 
         [0037]    As understood from  FIG. 2(B)  and  FIG. 3 , the protection transistor  121  has a first N type high-concentration impurity region (drain D) connected to the source line  130  (not shown in  FIGS. 2(B) and 3 ), a second N type high-concentration impurity region (source S) connected to the ground line  140  (not shown in  FIGS. 2(B) and 3 ), and a gate electrode G. The gate electrode G includes a first gate electrode  122   c  having a first gate length L 1  and a second gate electrode  123   c  having a second gate length L 2  (L 1 &lt;L 2 ) both of which are formed integrally with each other. 
         [0038]    A large number of transistor structural portions are formed integrally at the protection transistor  121 . In the present embodiment, first and second transistor structural portions are formed alternately. The first transistor structural portion  122  includes an N type source region  122   a  (part of second N type high-concentration impurity region S), an N type drain region  122   b  (part of first N type high-concentration impurity region D) and a gate electrode  122   c . The second transistor structural portion  123  includes an N type source region  123   a  (part of second N type high-concentration impurity region S), an N type drain region  123   b  (part of first N type high-concentration impurity region D) and a gate electrode  123   c . The sum W 1  of gate widths w 1 , w 1 , . . . of the transistor structural portions  122  is set so as to be smaller than the sum W 2  of gate widths w 2 , w 2 , . . . of the transistor structural portions  123 . The drain regions  122   b  and  123   b  are connected to the power line  130  through contacts  124 . The source regions  122   a  and  123   a  and the gate electrodes  122   c  and  123   c  are respectively connected to the ground line  140  through contacts  125 . Incidentally, there is no need to set the gate widths of the respective transistor structural portions  122  identical to one another. Further, it is not necessary that the gate widths of the transistor structural portions  123  are also identical to one another. 
         [0039]    The operations of the semiconductor device  100  according to the present embodiment will next be explained. 
         [0040]    When an electrostatic surge of positive polarity is applied to the source line  130  (refer to  FIG. 1 ), a stray current flows through the internal circuit  110  due to a rise in the potential of the source line  130 . When the potential of the source line  130  exceeds a breakdown voltage, a breakdown occurs, so that each of the NMOS transistors lying in the internal circuit  110  is transitioned to a bipolar operation. Since, however, the NMOS transistors in the internal circuit  110  are respectively connected in series to the PMOS transistors (refer to FIG.  2 (A)), the surge current is difficult to flow. 
         [0041]    Here, the gate length of each transistor structural portion  122  provided in the protection transistor (NMOS transistor)  121  is identical to the gate length L 1  of each NMOS transistor provided in the internal circuit  110 . Thus, when the breakdown occurs in the internal circuit  110 , the transistor structural portion  122  also breaks down. With a rise in the substrate potential B due to the breakdown, the transistor structural portion  122  is also transitioned to the bipolar operation. Further, since the substrate potential B rises, the transistor structural portion  123  formed integrally with the transistor structural portion  122  is also transitioned to the bipolar operation. Thus, the surge current flows in the protection transistor  121  and is absorbed into the ground line  140 . 
         [0042]    Since the surge current is hard to flow into the internal circuit as described above, most of the surge current flows through the protection transistor  121 . Thus, the internal circuit  110  is protected from ESD damage. 
         [0043]    The characteristic of the semiconductor device according to the present embodiment will subsequently be explained using  FIG. 4 . 
         [0044]      FIG. 4  is a imaginable graph for describing current-voltage characteristics of semiconductor devices. The vertical axis indicates a drain current [ampere], and the horizontal axis indicates a source-to-drain voltage [volt]. In  FIG. 4 , a curve C 0  indicates the current-voltage characteristic of the semiconductor device  100  (refer to  FIGS. 1 through 3 ), a curve C 1  indicates the current-voltage characteristic of a prior art semiconductor device (gate length L 1 ), and a curve C 2  indicates the current-voltage characteristic of a prior art semiconductor device (gate length L 2 ), respectively. 
         [0045]    As described above, the gate length of each transistor constituting the internal circuit  110  is L 1 . Therefore, the protection transistor having only the gate length L 1  is turned on at the same source-to-drain voltage V 0  as the internal circuit  110 . As is understood from  FIG. 4 , the semiconductor device  100  according to the present embodiment is also turned on at the same source-to-drain voltage V 0  as the protection transistor with the gate length L 1  alone. Thus, the semiconductor device  100  according to the present embodiment has an excellent ESD damage prevention effect because the protection transistor  121  is turned on with the same timing as the internal circuit  110 . Since the protection transistor having only the gate length L 2  is turned on at a voltage V 1  (V 0 &lt;V 1 ) in contrast to this, it becomes later than the internal circuit  110  in turn-on timing, so that a sufficient ESD damage prevention effect cannot be obtained. 
         [0046]    On the other hand, since the protection transistor  121  according to the present embodiment has the transistor structural portions  123  each having the gate length L 2  (L 1 &lt;L 2 ), a leak current at its non-operation can be reduced as compared with the protection transistor having the gate length L 1 . 
         [0047]    Here, in order to reduce the leak current, the sum W 1  of the gate widths w 1 , w 1 , . . . of the transistor structural portions  122  may preferably be set as smaller than the sum W 2  of the gate widths w 2 , w 2 , . . . of the transistor structural portions  123  as possible as described above. Since, however, the turn-on timing of protection transistor  121  becomes later than that of internal circuit  110  as the gate width of the protection transistor  122  is made short, the ESD damage prevention effect is reduced. Thus, the ratio between the gate widths of the transistor structural portions  122  and  123  should suitably be designed depending upon the tradeoff between the leak current reduction effect and the ESD damage prevention effect. 
         [0048]    According to the present embodiment as described above, the protection transistor  121  is used in which the transistor structural portions  122  each identical in gate length to the internal circuit  110 , and the transistor structural portions  123  each longer than the internal circuit  110  in gate length are formed integrally. It is therefore possible to provide a semiconductor device that is excellent in responsivity to the electrostatic surge (thus hard to cause the electrostatic breakdown) and small in leak current. 
       Second Preferred Embodiment 
       [0049]    A semiconductor device according to a second embodiment of the present invention will next be explained using  FIGS. 5 and 6 . 
         [0050]      FIG. 5  is a partly enlarged view showing a layout structure of a protection transistor according to the present embodiment. In  FIG. 5 , constituent elements marked with the same reference numerals as those in  FIG. 3  respectively indicate the same ones as those in  FIG. 3 . 
         [0051]    As shown in  FIG. 5 , the present embodiment is different from the first embodiment in that no contacts  124  are provided in a drain region  122   b  of each transistor structural portion  122 , that is, the contacts  124  that connect the drain of the protection transistor and a source line  130 , are provided in each transistor structural portion  123  alone. 
         [0052]    Since the semiconductor device according to the present embodiment is similar to the semiconductor device according to the first embodiment (refer to  FIGS. 1 and 2 ) in other configuration portion, its explanations are omitted. 
         [0053]    The operation of the semiconductor device according to the present embodiment will next be described using a conceptual plan view of  FIG. 6 . 
         [0054]    When an electrostatic surge of positive polarity is applied to a source line  130  (refer to  FIG. 1 ), a stray current flows through an internal circuit  110  due to a rise in the potential of the source line  130 . When the potential of the source line  130  exceeds a breakdown voltage, a breakdown occurs, so that each of NMOS transistors lying in the internal circuit  110  is transitioned to a bipolar operation. However, a surge current is hard to flow due to the reason similar to the first embodiment. 
         [0055]    When the breakdown occurs in the internal circuit  110  in a manner similar to the first embodiment, each transistor structural portion  122  of the protection transistor  121  also breaks down. With a rise in substrate potential B due to the breakdown, the transistor structural portions  122  and  123  are also transitioned to the bipolar operation. Thus, the surge current Is flows through the protection transistor  121  and is absorbed into the ground line  140 . Here, contacts  124  are not provided in a drain region  122   b  of each transistor structural portion  122  in the present embodiment as described above. Therefore, the current supplied from the source line  130  flows into the drain region  122   b  of each transistor structural portion  122  through a drain region of each transistor structural portion  123 . Therefore, a parasitic drain resistor R of the transistor structural portion  122  becomes larger than a parasitic drain resistor of the transistor structural portion  123  by intervention of the drain of the transistor structural portion  123  (refer to  FIG. 6 ). Accordingly, the surge current Is flowing through the protection transistor  121  flows through the transistor structural portion  123  in excess and is reduced at the transistor structural portion  122 . Thus, the concentration of the surge current on the transistor structural portion  122  short in gate length is reduced in the present embodiment. 
         [0056]    Since the transistor structural portion  122  is short in gate length, the surge current is easy to concentrate. Therefore, a junction breakdown or the like is easy to occur. As a method for suppressing the concentration of the surge current, there is considered a method for setting the gate width of the transistor structural portion  122  as long as possible. When the gate width of the transistor structural portion  122  is made long, a leak current of the protection transistor  121  increases correspondingly. On the other hand, in the present embodiment, the concentration of the surge current is suppressed by avoiding the provision of the contacts  124  in the drain of each transistor structural portion  122 . Therefore, there is no need to lengthen the gate width of the transistor structural portion  122 . Thus, an increase in leak current is avoided. 
         [0057]    According to the present embodiment as described above, a semiconductor device can be provided which is excellent in responsivity to an electrostatic surge and is further smaller in leak current than the first embodiment. 
       Third Preferred Embodiment 
       [0058]    A semiconductor device according to a third embodiment of the present invention will next be explained using  FIGS. 7 and 8 . 
         [0059]    The present embodiment is of an example in which the invention according to the second embodiment is applied to a semiconductor device (i.e., a semiconductor device in which a compound of silicon and a metal is used for a source/drain electrode) of a silicide structure. 
         [0060]      FIG. 7  is a partly enlarged view showing a layout structure of a protection transistor according to the present embodiment. In  FIG. 7 , constituent elements marked with the same reference numerals as those in  FIG. 5  respectively indicate the same ones as those shown in  FIG. 5 . 
         [0061]    In  FIG. 7 , a silicide layer  701   a  and contacts  702   a  are formed in the surface of a source region  122   a  of each transistor structural portion  122 . The source region  122   a  and a ground line  140  (not shown in  FIG. 7 ) are connected to each other via the contacts  702   a . On the other hand, the silicide layer and the contacts are not formed in a drain region  122   b  of the transistor structural portion  122 . 
         [0062]    A silicide layer  703   a  and contacts  704   a  are formed in the surface of a source region  123   a  of each transistor structural portion  123 . The source region  123   a  and the ground line  140  (not shown in  FIG. 7 ) are connected to each other via the contacts  704   a . Further, a drain region  123   b  of the transistor structural portion  123  is connected to a source line  130  (not shown in  FIG. 7 ) via a silicide layer  703   b  and contacts  704   b . 
         [0063]    Thus, in the present embodiment, the silicide layer and the contacts are not provided in the drain region  122   b  of each transistor structural portion  122 . 
         [0064]    The operation of the semiconductor device according to the present embodiment will next be explained using a conceptual plan view of  FIG. 8 . 
         [0065]    In a manner similar to the first and second embodiments, an electrostatic surge of positive polarity is applied to the source line  130  (refer to  FIG. 1 ). When the potential of the source line  130  exceeds a breakdown voltage, a breakdown is developed, so that each of NMOS transistors lying in an internal circuit  110  is transitioned to a bipolar operation. However, a surge current is hard to flow due to the reasons similar to the first and second embodiments. 
         [0066]    When the breakdown occurs in the internal circuit  110  in a manner similar to the first and second embodiments, each transistor structural portion  122  of the protection transistor  121  also breaks down. With a rise in substrate potential due to the breakdown, the transistor structural portions  122  and  123  are also transitioned to the bipolar operation. Thus, the surge current flows through the protection transistor  121  and is absorbed into the ground line  140 . Here, the contacts are not provided in the drain region  122   b  of each transistor structural portion  122  in the present embodiment. Therefore, the current supplied from the source line  130  flows into the drain region of the transistor structural portion  122  through the drain region of the transistor structural portion  123 . 
         [0067]    The reason why the silicide layer is not formed in the drain region of each transistor structural portion  122  in the present embodiment will be explained below. 
         [0068]    The resistance of the silicide layer is low one digit or more as compared with an impurity diffusion region. Therefore, the difference in drain resistance between the transistor structural portions  122  and  123  is not made so large where the silicide layer is provided in the drain region of the transistor structural portion  122 . Thus, in the present embodiment, the silicide layer as well as the contacts is not provided in the drain region of the transistor structural portion  122 , and the difference in drain resistance between the transistor structural portions  122  and  123  is made large sufficiently. Thus, the present embodiment is capable of sufficiently reducing concentration of the surge current on the transistor structural portion  122 . 
         [0069]    In the present embodiment, the concentration of the surge current is suppressed by avoiding the provision of the silicide layer and the contacts in the drain of each transistor structural portion  122 . Thus, due to the same reason as the second embodiment, there is no need to lengthen the gate width of the transistor structural portion  122 , and hence no leak current is increased. 
         [0070]    According to the present embodiment as described above, a semiconductor device that is excellent in responsivity to an electrostatic surge and small in leak current, can be provided in a manner similar to the second embodiment. 
       Fourth Preferred Embodiment 
       [0071]    A semiconductor device according to a fourth embodiment of the present invention will next be explained using  FIG. 9 . 
         [0072]    The present embodiment is different from the first embodiment in that the boundary between transistor structural portions  122  and  123  is formed in such a manner that their gate lengths change continuously. 
         [0073]      FIG. 9  is a partly enlarged view conceptually showing a layout structure of a protection transistor according to the present embodiment.  FIG. 10  is a diagram conceptually illustrating a protection transistor/layout structure for comparison. In  FIGS. 9 and 10 , constituent elements marked with the same reference numerals as those shown in  FIG. 3  respectively indicate the same ones as those shown in  FIG. 3 . 
         [0074]    In the present embodiment, as indicated by symbol a in  FIG. 9(A) , the gate lengths of gate electrodes  122   c  and  123   c  are formed so as to continuously change from L 1  to L 2  in the neighborhood of the boundary between the transistor structural portions  122  and  123 . 
         [0075]    On the other hand, in the example of  FIG. 10(A) , the gate lengths of gate electrodes  122   c  and  123   c  are formed so as to change from L 1  to L 2  in rectangular form on the boundary between transistor structural portions  122  and  123  as indicated by symbol β. 
         [0076]    When the gate electrode has a rectangular shape as shown in  FIG. 10(B) , an electric field is easy to concentrate on its apex-angle portion β 0 . Therefore, when a surge current flows through the protection transistor  121 , the surge current concentrates on the apex-angle portion β 0 . Thus, a junction breakdown or the like is easy to take place at the apex-angle portion β 0 . 
         [0077]    On the other hand, in the present embodiment, the electric field is hard to concentrate on the boundary between the transistor structural portions  122  and  123  as indicated by α 0  in  FIG. 9(B)  because the gate lengths gradually change from L 1  to L 2 . In the present embodiment, the surge current is therefore hard to concentrate on the boundary when the surge current flows through the protection transistor  121 . Thus, a transistor breakdown such as a junction breakdown is hard to occur. 
         [0078]    Since the operation of the semiconductor device according to the present embodiment is similar to the first embodiment, its explanations are omitted. 
         [0079]    According to the present embodiment as described above, a semiconductor device that is excellent in responsivity to an electrostatic surge (thus hard to cause an electrostatic breakdown) and small in leak current can be provided due to the reason similar to the first embodiment. 
         [0080]    In addition, according to the present embodiment, it is possible to make it hard to generate the transistor breakdown due to the surge current due to the above reason. 
       Fifth Preferred Embodiment 
       [0081]    A semiconductor device according to a fifth embodiment of the present invention will next be described using  FIG. 11 . 
         [0082]    The present embodiment is different from the first embodiment in that protrusions or convex portions are provided only on the source region side of both ends of a gate electrode to set the gate lengths of transistor structural portions  122  and  123 . 
         [0083]      FIG. 11  is a partly enlarged view conceptually showing a layout structure of a protection transistor according to the present embodiment. In  FIG. 11 , constituent elements marked with the same reference numerals as those shown in  FIG. 3  respectively indicate the same ones as those shown in  FIG. 3 . 
         [0084]    In the present embodiment, as indicated by symbol γin  FIG. 11(A) , projections or convex portions  1101  are provided only on the source region side of both ends of the gate electrode. Thus, the gate length of each transistor structural portion  122  is set to L 1  and the gate length of each transistor structural portion  123  is set to L 2 . 
         [0085]    When each of the gate electrodes  122   c  and  123   c  has a rectangular shape, the concentration of a surge current takes place on the drain regions  122   b  and  123   b  sides. On the other hand, in the present embodiment, the end faces of the gate electrodes  122   c  and  123   c  are formed linearly on the sides of the drain region  122   b  and  123   b  and hence electric field concentration is not generated (refer to  FIG. 11(B) ). Thus, even though the surge current flows through the protection transistor  121 , the surge current is hard to concentrate on the boundary between the transistor structural portions  122  and  123 . Hence, a transistor breakdown such as a junction breakdown is hard to occur. 
         [0086]    Since the operation of the semiconductor device according to the present embodiment is similar to the first embodiment, its description is omitted. 
         [0087]    According to the present embodiment as described above, a semiconductor device that is excellent in responsivity to an electrostatic surge (thus hard to cause an electrostatic breakdown) and small in leak current can be provided due to the reason similar to the first embodiment. 
         [0088]    In addition, according to the present embodiment, it is possible to make it hard to develop the transistor breakdown due to the surge current due to the above reason. 
         [0089]    While the preferred forms of the present invention have been described, it is to be understood that modifications will be apparent to those skilled in the art without departing from the spirit of the invention. The scope of the invention is to be determined solely by the following claims.
The present invention provides a semiconductor device capable of preventing an electrostatic surge without increasing a leak current. In the semiconductor device, a protection circuit for protecting an internal circuit is provided between a source line and a ground line. The protection circuit has a protection transistor of which the drain is connected to the source line and the source and gate are connected to the ground line. The protection transistor is configured by integrally forming two types of transistor structural portions. The latter of the transistor structural portions is longer than the former thereof in gate length. In addition, the sum of gate widths of the latter transistor structural portions is larger than the sum of gate widths of the former transistor structural portions.