BACKGROUND OF THE INVENTION  
       [0001]     The present invention relates, in general, to the field of integrated circuit memories. More particularly, the present invention relates to a dual-port integrated circuit memory architecture and method of operation.  
         [0002]     A standard single-port or “1T/1C” DRAM cell  10  is shown in  FIG. 1 . DRAM cell  10  includes a pass transistor  18  and storage capacitor  22 . Cell  10  further includes a word line  16  coupled to the gate of transistor  18 , as well as a bit line  12  and complementary bit line  14 . Bit line  12  is coupled to the drain of transistor  18 , and complementary bit line  14  is coupled to the drain of transistors in other 1T/1C cells in an array of cells (not shown in  FIG. 1 ).  
         [0003]     A standard dual-port or “2T/1C” DRAM cell  20  is shown in  FIG. 2 . DRAM cell  20  includes two pass transistors  34  and  36  each coupled to storage capacitor  38 . Cell  20  further includes a word line  42  coupled to the gate of transistor  34 , and an additional word line  44  coupled to the gate of transistor  36 . Cell  20  also includes a set of two bit lines  24  and  28 , as well as two complementary bit lines  26  and  32 . Bit line  24  is coupled to the drain of transistor  34  and bit line  28  is coupled to the drain of transistor  36 . Complementary bit lines  26  and  32  are coupled to the drains of transistors in other 2T/1C cells in an array of cells (best seen in  FIG. 3 ). Bit lines  24  and  26  and word line  42  are associated with port A. Bit lines  28  and  32  are associated with a second port and method for accessing the cell referred to as port B.  
         [0004]     Referring now to  FIG. 3 , a portion  30  of an array of 2T/1C memory cells is shown. The array portion  30  includes two rows and three columns of cells in order to show the bit line and word line connections. In the first row of cells, cells  20 A and  20 C are connected to the two bit lines in the first set of bit lines  46 . Cell  20 B is connected to the two complementary bit lines in the first set of bit lines  46 . In the second row of cells, cells  20 D and  20 F are connected to the two bit lines in the second set of bit lines  48 . Cell  20 E is connected to the two complementary bit lines in the second set of bit lines  48 . A first set of two word lines is coupled to a first column of cells that includes cells  20 A and  20 D, a second set of two word lines is coupled to a second column of cells that includes cells  20 B and  20 E, and a third set of two word lines is coupled to a third column of cells that includes cells  20 C and  20 F. The interconnection pattern shown in  FIG. 3  is extended as required to accommodate the number of rows and columns of cells in the entire array.  
         [0005]     The standard DRAM cell  10  shown in  FIG. 1  operates according to a simultaneous access method in which disturb problems between cells in the array are minimized. However, many prior art techniques use a staggered access method for operating the dual-port DRAM cell  20  shown in  FIG. 2  for refresh or read/write operations. This type of access can lead to noise problems and data disturbs, whereby some memory cells are being sensed while others in the same sub-array are being restored, causing noise between sets of memory cells.  
         [0006]     Referring now to  FIG. 4 , a portion  40  of a dual-port 2T/2C memory array is shown in greater detail. In particular, sense amplifiers  52 ,  54 ,  56 , and  58  are shown for resolving the data state of a pair of bit lines. The actual physical location of the sense amplifiers  52 - 58  in the integrated circuit may be different from that shown in  FIG. 4 . In addition,  FIG. 4  shows parasitic capacitors  53 ,  55 , and  57  that can act as signal paths for undesirably affecting the data state of a selected memory cell or bit line in the array.  
         [0007]     The disturb problem for a staggered access of a dual-port memory array is shown in greater detail in the timing diagram  50  of  FIG. 5 . The word line signal  62  is shown for accessing the first port of the memory. The word line signal  64  is also shown for accessing the second port of the memory, which is delayed in time by one-half of a clock cycle. The bit line waveforms  66  and  68  are shown for the first port. The bit line waveforms include a first portion in which the bit line signal is developed, and a second portion in which the bit line signal is resolved by the sense amplifiers. The bit lines waveforms  72  and  74  are delayed by one-half of a clock cycle in response to the word line waveforms. This type of consecutive access to the dual-port cell can lead to disturb problems. A critical sensing time  76  occurs when a bit line signal for the first port of the memory is being resolved when a bit line signal is being developed for the second port of the memory. The large bit line signal on the first port can undesirably affect the data state of the developing signal on the second port, which does not normally occur for single port memories using simultaneous access.  
         [0008]     What is desired, therefore, is a simple and cost effective dual-port memory architecture and method of operation that eliminates the disturb problems associated with the prior art staggered method of operating a dual-port memory.  
       SUMMARY OF THE INVENTION  
       [0009]     According to the present invention an architecture and method of operation for a dual-port memory substantially eliminates the noise problems associated with the known staggered methods of operation. The architecture and method of operation of the dual-port memory of the present invention has substantially the same immunity to disturb and noise problems as that found in conventional 1T/1C single-port DRAMs widely used today.  
         [0010]     In a preferred method of operation, the first and second word lines of a dual-port memory cell are activated at the same time, such that all four bit lines associated with the cell also move at the same time. This then confers the same noise immunity as a conventional 1T/1C DRAM where all the cells are sensed at the same time along a single word line in a given sub-array, and disturb problems are minimized.  
         [0011]     The dual-port memory of the present invention uses simple control logic circuitry without the need for additional external control signals. There are no lock-out times or write restrictions with the method of the present invention as are found in prior art designs.  
         [0012]     The dual-port memory of the present invention includes a first embodiment for hiding refresh, and a second embodiment for increasing operating speed.  
         [0013]     In the first embodiment for hiding refresh, port A is used to read or write to the memory cell. Port B is used for refresh. An on-chip address generator is used together with a refresh timer to generate the refresh address. The refresh address, if required, and the read/write address are compared. If they are different, they are applied to the row decoders at the same time so that the word line on port A and the word line on port B to different cells will be activated at the exact same time. If the refresh address and read/write address are the same, then no refresh is required and the word line on port B is inactive.  
         [0014]     Word line B, therefore, is allowed to go high only if the word line address is different from the word line A address. If they are the same the cell has been refreshed by word line A. If both word line A and word line B go high in the same cell, the bit line signal is cut in half, and only one of the ports is activated.  
         [0015]     The comparison of the word line A and word line B addresses can be done during the address setup time of the memory and does not materially impact overall operating speed.  
         [0016]     In the second embodiment, the two ports of the memory cell can be operated to substantially increase operating speed. In the case of the dual-port memory, operating speed is effectively doubled. In this embodiment, external addresses come into the memory at twice the rate of the word line cycle rate. Latency is used to compare the high speed addressing so that if two consecutive word line addresses are the same, only one of the ports of the dual port cell is selected. If the two addresses are different, both port A and port B word lines go active simultaneously, and data can be read or written into the selected cells.  
         [0017]     Clock latency allows two consecutive row addresses to be compared. If the addresses are different, port A and B of the memory are used at one-half rate. If they are the same, then only port A is used. Data can be written and read at full rate. Internal word line or RAS cycle times can run at a relaxed half-rate with the method of the present invention.  
     
    
     BRIEF DESCRIPTION OF THE DRAWINGS  
       [0018]     The aforementioned and other features and objects of the present invention and the manner of attaining them will become more apparent and the invention itself will be best understood by reference to the following description of a preferred embodiment taken in conjunction with the accompanying drawings, wherein:  
         [0019]      FIG. 1  is a schematic diagram of a prior art single-port memory cell;  
         [0020]      FIG. 2  is a schematic diagram of a prior art two-port memory cell;  
         [0021]      FIG. 3  is a schematic diagram of a portion of a prior art two-port memory cell array;  
         [0022]      FIG. 4  is a schematic diagram of the memory cell array portion of  FIG. 3  further including sense amplifiers and parasitic capacitance;  
         [0023]      FIG. 5  is a timing diagram showing various waveforms in a prior art staggered method of operating a two-port memory;  
         [0024]      FIG. 6  is a block diagram of a first embodiment of a dual-port memory according to the present invention;  
         [0025]      FIG. 7  is a timing diagram associated with the dual-port memory of  FIG. 6 ;  
         [0026]      FIG. 8  is a block diagram of a second embodiment of a dual-port memory according to the present invention; and  
         [0027]      FIG. 9  is a timing diagram associated with the dual-port memory of  FIG. 8 . 
     
    
     DETAILED DESCRIPTION  
       [0028]     Referring now to  FIG. 6 , an integrated circuit memory  60  includes an array of dual-port memory cells  78  including first and second word line buses WLA and WLB, an address generator  92  for generating read/write addresses in response to addresses received on an external address bus, a refresh timer  88 , a refresh address generator  84  having an input coupled to the refresh timer  88  and an output for generating refresh addresses, a comparator  86  for comparing the read/write addresses to the refresh addresses, and a row decoder  82  having an input coupled to the comparator  86 , and first and second outputs for selectively driving the first and second word line buses WLA and WLB in response to the data state of the comparator  86 . A logic control block  93  is also shown in  FIG. 6 . Logic control block receives the CLOCK and COMMAND signals, and provides a control signal output coupled to address generator  92 . The WLA and WLB word line buses have a width of 64, 128, or 256 bits, although other widths can be used. The memory cells in memory array  78  are of the type shown in previous  FIGS. 2 and 3 .  
         [0029]     The method of operating memory  60  includes reading or writing to a first port (A) of the dual-port memory cells in the array  78 , refreshing at a second port (B) of the dual-port memory cells in the array, comparing a read/write address to a refresh address, and, if the read/write address and the refresh address are different, simultaneously activating a word line associated with the first port (A) of a first dual-port memory cell and a word line associated with the second port (B) of a second dual-port memory cell. For example, in  FIG. 3 , two different two-port memory cells could be memory cell  20 A and memory cell  20 B.  
         [0030]     If the read/write address and the refresh address are the same, then only the word line associated with the first port (A) of the selected dual-port memory is activated. For example, in  FIG. 3 , only word line WLA for memory cell  20 A is activated.  
         [0031]     In the method of the present invention, comparing the read/write and refresh address can occur during a memory setup time so that memory speed is unaffected.  
         [0032]     The method of the present invention is explained in further detail with respect to the timing diagram of  FIG. 7 . The clock signal for the memory  94  is shown in conjunction with four separate word line signals  96 ,  98 ,  102 , and  104  for different memory cells. Note that the first and second port word line signals are always simultaneously activated. Word line signals  96  and  98  are associated with a first memory cycle and word line signals  102  and  104  are associated with a second memory cycle.  
         [0033]     Referring now to  FIG. 8 , an integrated circuit memory  80  includes an array of dual-port memory cells  78  including first and second word line buses WLA and WLB, an address generator  92  for generating read/write addresses, a first FIFO  106  having an input coupled to the address generator  92  and first and second outputs, a second FIFO  108  having an input coupled to the first output of the first FIFO  106  and an output, a comparator  86  for comparing the second output of the first FIFO  106  to the output of the second FIFO  108 , and a row decoder  82  having an input coupled to the comparator  86 , and first and second outputs for selectively driving the first and second word line buses WLA and WLB in response to the data state of the comparator  86 . A logic control block  93  is coupled to the address generator  92  and receives the CLOCK and COMMAND inputs signals. In memory  80 , the first FIFO  106  provides a one-half clock cycle delay between the input and each of the first and second outputs. The second FIFO  108  also provides a one-half clock cycle delay between the input and the output. An I/O buffer  95  is also shown in  FIG. 8 , for receiving data input signal  128  and for providing the data output signal  130 .  
         [0034]     The method of operating memory  80  according to the present invention includes comparing a first read/write address to a second consecutive refresh address, and, if the first and second read/write addresses are different, simultaneously activating a word line associated with a first port (A) of a first dual-port memory cell and a word line associated with a second port (B) of a second dual-port memory cell. For example, in  FIG. 3 , two different two-port memory cells could be memory cell  20 A and memory cell  20 B.  
         [0035]     If the first and second read/write addresses are the same, then only the word line associated with one of the ports of the selected dual-port memory is activated. For example, in  FIG. 3 , only word line WLA for memory cell  20 A is activated.  
         [0036]     The method of the present invention uses a latency of three to compare the first and second consecutive read/write addresses so that memory speed is unaffected. The effective improvement in the memory speed for the dual-port memory  80  shown in  FIG. 8  is about a factor of two.  
         [0037]     The method of the present invention is explained in further detail with respect to the timing diagram of  FIG. 9 . Timing diagram  90  includes a memory CLOCK signal  110 . The ADDRESS and COMMAND buses  112  and  114  are shown. The ADDRESS bus includes the external addresses and the COMMAND bus includes information to request a READ, a WRITE or a NOP (no operation). One standard COMMAND bus includes decoded /CE and /WE signals. Another standard COMMAND bus includes /RAS, /CAS, and /WE signals. Four word line signals  116 ,  118 ,  120 , and  122  are shown. Signals  116  and  118  illustrate the activation of word line signals for different memory cells in the array in the case of different consecutive read/write addresses, in this case two consecutive reads on addresses zero (0) and then one (1). Note that word line signal  116  is for activating the first port of a first memory cell with address zero (0) and word line signal  118  is for activating the second port of a second memory cell with address one (1). In contrast, word line signals  120  and  122  illustrate the activation of a signal word line signal for the same consecutive read/write address two (2). Note that only the first port word line signal  120  is activated, whereas the second port word line signal  122  remains inactive. Since the DIN, D 2 A, and D 2 B data word all correspond to the same address, only one word line needs to be selected and the second data word D 2 B is written into the cell. If both word lines are selected at the same time on the same for back-to-back reads, a failure would occur. The effective “half-charge”, since one cell capacitor is used for sets of bit lines, results in a failure to sense the correct data.  
         [0038]     The clock latency periods  124  and  126  are shown for the first and second address comparisons. Note that a latency of three is used, because the read request is pipelined in serially into FIFOs  106  and  108 , performed in parallel in array  78 , and then pipelined out serially through I/O buffer  95 .  
         [0039]     Finally, the DIN data input signal  128  is received and the Q data output signal  130  is provided by I/O buffer  95 .  
         [0040]     While there have been described above the principles of the present invention in conjunction with specific memory architectures and methods of operation, it is to be clearly understood that the foregoing description is made only by way of example and not as a limitation to the scope of the invention. Particularly, it is recognized that the teachings of the foregoing disclosure will suggest other modifications to those persons skilled in the relevant art. Such modifications may involve other features which are already known per se and which may be used instead of or in addition to features already described herein. Although claims have been formulated in this application to particular combinations of features, it should be understood that the scope of the disclosure herein also includes any novel feature or any novel combination of features disclosed either explicitly or implicitly or any generalization or modification thereof which would be apparent to persons skilled in the relevant art, whether or not such relates to the same invention as presently claimed in any claim and whether or not it mitigates any or all of the same technical problems as confronted by the present invention. The applicants hereby reserve the right to formulate new claims to such features and/or combinations of such features during the prosecution of the present application or of any further application derived therefrom.
A dual-port memory substantially eliminates noise problems associated with the staggered methods of operation. The first and second word lines of a dual-port memory cell are simultaneously activated, such that all four bit lines associated with the cell also move at the same time. The dual-port memory uses simple control logic circuitry without the need for additional external control signals. There are no lock-out times or write restrictions with the method of the present invention. The dual-port memory of the present invention includes a method for hiding refresh, and a method for increasing operating speed.