CROSS REFERENCE TO RELATED APPLICATIONS 
       [0001]    This application claims the priority benefit of French patent application Ser. No. 09/50420, filed on Jan. 23, 2009, entitled “INSULATED WELL WITH A LOW STRAY CAPACITANCE FOR ELECTRONIC COMPONENTS,” which is hereby incorporated by reference to the maximum extent allowable by law. 
     
    
     BACKGROUND OF THE INVENTION 
       [0002]    1. Field of the Invention 
         [0003]    The present invention relates to electronic components formed in and on a semiconductor structure and insulated from one another. More specifically, the present invention relates to a structure in which stray capacitances between components and between each component and the substrate are decreased. The present invention also relates to a method for manufacturing such a structure. 
         [0004]    2. Discussion of the Related Art 
         [0005]    Conventionally, electronic components formed in and on a semiconductor substrate, for example, power components, are insulated at the surface of the stacking by PN junctions. If the substrate is of type N, P regions laterally insulate the electronic components from one another. This type of insulation has the disadvantage of taking up a significant surface area to be efficient. Indeed, the width of the P region is at least equal to twice its depth. It is further generally considered that a PN-junction insulation is not optimal as far as the stray capacitances between component and substrate are concerned. 
         [0006]    Thus, to limit the surface area taken up and to decrease stray capacitances, it has been provided to form electronic components in and on substrates of silicon on insulator type (SOI) and to insulate the components from one another by means of dielectric materials. 
         [0007]      FIG. 1  illustrates one of such structures provided by the applicant in the patent application filed under number FR 2914497. Two diodes D 1  and D 2  are formed side by side in an SOI-type structure which comprises an N-type doped semiconductor layer formed on a semiconductor substrate  1  with an interposed insulating layer  3 . Diodes D 1  and D 2  are laterally insulated by insulating regions  5 , for example, made of silicon oxide, which cross the semiconductor layer and join insulating layer  3 . Each diode is thus formed by an N-type doped semiconductor well  7  at the surface of which a P-type doped region  9  is formed. Each well  7  is surrounded (bottom, lateral walls, and a portion of its upper surface) by a heavily-doped N-type region  11  (N + ). An anode contact  13  and a cathode contact  15  are respectively formed on regions  9  and  11  of diode D 1  and an anode contact  17  and a cathode contact  19  are formed, respectively, on regions  9  and  11  of diode D 2 . Layer  3  and insulating regions  5  for example have thicknesses greater than 2 μm and enable for the stray capacitances between components and between each component and the substrate to be very small. 
         [0008]      FIG. 2  is an electric diagram illustrating an example of a device for protecting a data transmit line  21  (I/O) against overvoltages. The device of  FIG. 2  comprises two low-capacitance diodes D 1  and D 2  and a protection diode DP. Diode D 2  has its cathode  19  connected to line  21  and its anode  17  connected to ground. When a negative overvoltage appears on line  21 , diode D 2  is forward biased and turns on. Diode D 1  and protection diode DP are arranged, in series, in parallel with diode D 2 . Diode D 1  has its anode  13  connected to line  21  and its cathode  15  connected to the cathode of protection diode DP. The anode of protection diode DP is grounded. When a positive overvoltage greater than the avalanche voltage of protection diode DP appears on line  21 , protection diode DP avalanches and conducts the current, diode D 1  being also forward biased. 
         [0009]    It is generally desired for circuits of protection against overvoltages such as that of  FIG. 2  to affect as little as possible the signals flowing through the line. To achieve this, the stray capacitances linked to the protection circuit must be as low as possible. Thus, protection diodes D 1  and D 2  may correspond to the diodes of  FIG. 1  and protection diode DP may also be formed in a similar well. 
         [0010]    However, SOI-type structures have various disadvantages. SOI-type wafers are relatively expensive as compared with solid wafers if specific characteristics are imposed to each of the wafer elements. Further, for a good vertical insulation, trenches comprising a thick buried oxide layer are generally used, which may cause a significant deformation, making the wafer processing difficult in manufacturing operations. 
         [0011]    There thus is a need for a structure enabling to insulate electronic components, which is relatively inexpensive, of low bulk, and which limits stray capacitances between components and between each component and the substrate. 
       SUMMARY OF THE INVENTION 
       [0012]    An object of an embodiment of the present invention is to provide a low-cost and low-bulk structure comprising electronic components insulated from one another. 
         [0013]    Another object of an embodiment of the present invention is to provide a structure in which stray capacitances between components and between each component and the substrate are very low. 
         [0014]    Another object of an embodiment of the present invention is to provide a method for manufacturing such a structure. 
         [0015]    Thus, an embodiment of the present invention provides a structure comprising at least one electronic component formed in a semiconductor stack comprising a heavily-doped buried silicon layer of a first conductivity type extending over a lightly-doped silicon substrate of a second conductivity type and a vertical insulating trench surrounding the component, the trench penetrating, into the silicon substrate, under the silicon layer, down to a depth greater than the thickness of the space charge region in the silicon substrate. 
         [0016]    According to an embodiment of the present invention, the silicon substrate is doped with a dopant concentration smaller than 8.5×10 atoms/cm 3  and the buried silicon layer is doped to a dopant concentration greater than 10 19  atoms/cm 3 . 
         [0017]    According to an embodiment of the present invention, the space charge region in the silicon substrate has a thickness comprised between 1 μm and 3.3 μm. 
         [0018]    According to an embodiment of the present invention, the structure further comprises heavily-doped regions of the first conductivity type formed along the trench, above the heavily-doped layer of the first conductivity type. 
         [0019]    According to an embodiment of the present invention, the insulating trench has insulated walls and is filled with polysilicon. 
         [0020]    According to an embodiment of the present invention, the electronic component is a diode formed in an upper silicon layer of the first conductivity type extending on the heavily-doped silicon layer of the first conductivity type. 
         [0021]    According to an embodiment of the present invention, the first conductivity type is type N. 
         [0022]    An embodiment of the present invention further provides a method for manufacturing a semiconductor structure intended to contain an electronic component, comprising the successive steps of: 
         [0023]    forming an upper silicon layer extending on a lightly-doped silicon substrate of a second conductivity type with an interposed heavily-doped buried silicon layer of the first conductivity type; 
         [0024]    forming a trench, along the contour of the component, in the upper silicon layer; 
         [0025]    performing a doping of the first conductivity type of the walls of the upper silicon layer, from the trench; 
         [0026]    continuing the trench in the silicon substrate down to a depth greater than the thickness of the space charge region in the silicon substrate; and 
         [0027]    forming, on the walls and the bottom of the trench, an insulating layer. 
         [0028]    According to an embodiment of the present invention, the method further comprises a step of filling of the trench with polysilicon. 
         [0029]    According to an embodiment of the present invention, the buried heavily-doped silicon layer of the first conductivity type is formed by implantation/diffusion of dopants at the surface of the silicon substrate and the upper silicon layer is formed by epitaxy on the buried silicon layer. 
         [0030]    The foregoing objects, features, and advantages of the present invention will be discussed in detail in the following non-limiting description of specific embodiments in connection with the accompanying drawings. 
     
    
     
       BRIEF DESCRIPTION OF THE DRAWINGS 
         [0031]      FIG. 1 , previously described, illustrates a known structure comprising electronic components insulated from one another; 
           [0032]      FIG. 2 , previously described, illustrates an example of a known circuit for protecting a data transmission line against overvoltages; 
           [0033]      FIG. 3  illustrates a structure comprising electronic components insulated from one another according to an embodiment of the present invention; and 
           [0034]      FIGS. 4A to 4G  illustrate results of steps of a method for manufacturing the structure of  FIG. 3  according to an embodiment of the present invention. 
       
    
    
     DETAILED DESCRIPTION 
       [0035]    For clarity, the same elements have been designated with the same reference numerals in the different drawings and, further, as usual in the representation of integrated circuits, the various drawings are not to scale. 
         [0036]      FIG. 3  illustrates a structure comprising electronic components insulated from one another according to an embodiment of the present invention. 
         [0037]    Two N-type doped silicon wells  33  are formed on a lightly-doped P-type silicon substrate  31  (P − ). In  FIG. 3 , the shown electronic components are diodes, D 1  and D 2 , but it should be understood that any electronic component may be formed in wells  33 . A heavily-doped N-type layer  35  (N + ) is formed at the interface between wells  33  and substrate  31 . Heavily-doped N-type regions  37  extend on the lateral walls of wells  33  and on part of their upper surfaces. P-type doped anode regions  39  of diodes D 1  and D 2  are formed at the surface of wells  33 . Wells  33  are laterally insulated by insulating trenches  41  which penetrate into substrate  31 . In the shown example, the walls and the bottom of trenches  41  are covered with an insulating layer  43 , for example, made of silicon oxide, and the space remaining in trenches  41  is filled with polysilicon  45  or any other material enabling to fill this space. As a numerical example, wells  33  may have a thickness of approximately 10 μm and heavily-doped N-type layer  35  has a thickness of approximately 5 μm. 
         [0038]    The association of lightly-doped P-type substrate  31  and of heavily-doped N-type layer  35  forms a space charge region which extends deeply into substrate  31 , due to the doping difference between these regions. The limit of this space charge region is shown in dotted lines in  FIG. 3 . The dopings of layer  35  and of substrate  31  are provided so that the space charge region in substrate  31  has a thickness greater than approximately 3 μm. For example, these dopings are relatively greater than 10 19  atoms/cm 3  for layer  35  and smaller than 8.5×10 13  atoms/cm 3  for substrate  31 , for example comprised between 8×10 12  atoms/cm 3  and 8.5×10 13  atoms/cm 3 . A space charge region having a 8-μm thickness amounts, in terms of stray capacitance, to a silicon oxide layer having a thickness of approximately 2.5 μm. Indeed, the permittivity of intrinsic silicon is approximately equal to 3 times the permittivity of silicon oxide. Thus, the vertical insulation between component and substrate, formed by the structure of  FIG. 3 , is equivalent to that of known structures on SOI substrates, without using such substrates. The man skilled in the art will easily determine the dopings of layer  35  and substrate  31  to obtain a space charge region having a thickness comprised between 3 μm and 10 μm, such a thickness corresponding to a buried oxide having a thickness comprised between 1 μm and 3.3 μm. 
         [0039]    Trenches  41  penetrate into substrate  31  down to a depth greater than the thickness of the space charge region in substrate  31 . This enables limiting stray capacitances between two neighboring components formed in neighboring wells  33 . Indeed, if insulating trenches  41  stop at the interface between layer  35  and substrate  31 , this may create high stray capacitances may form between two neighboring components, under insulating trenches  41 . The insulation between wells is then ineffective. The structure of  FIG. 3  enables to avoid this, due to insulating trenches  41  forming an obstacle to the creation of such stray capacitances. 
         [0040]    A structure laterally insulated by an insulating trench  41  is thus obtained. This insulation has, in known fashion, the advantage of ensuring low stray capacitances between components and to have a decreased bulk (smaller than that of junction insulations). Further, wells  33  are insulated from substrate  31  by a junction which, contrary to common belief, provides effects identical to those of a buried oxide layer having a thickness of a few micrometers. Stray capacitances between each component and the substrate are thus decreased without requiring the use of an expensive SOI structure likely to be deformed. 
         [0041]      FIGS. 4A to 4G  illustrate results of steps of a method according to an embodiment of the present invention providing the structure of  FIG. 3 . 
         [0042]      FIG. 4A  shows a lightly-doped P-type silicon substrate  31  (P − ) on which is formed a heavily-doped N-type silicon layer  35  (N + ). Layer  35  may be formed, for example, by arsenic or antimony implantation, and have a thickness of approximately 5 μm after diffusion. A thick N-type doped silicon layer  33  is formed by epitaxy on layer  35 . As an example, substrate  31  may be doped with a dopant concentration smaller than 1.5×10 13  atoms/cm 3  and layer  35  may be doped with a dopant concentration on the order of 10 19  atoms/cm 3 . Layer  33  may be doped with a dopant concentration on the order of 2×10 13  atoms/cm 3  and have a thickness of approximately 10 μm. 
         [0043]    At the step illustrated in  FIG. 4B , a mask  51  comprising openings through which trenches  53  are formed in the upper silicon layer, to form silicon wells  33 , has been formed at the surface of silicon layer  33 . Mask  51  may for example be made of silicon oxide or of silicon nitride. Trenches  53 , for example resulting from a plasma etch, stop in heavily-doped silicon layer  35 . Indeed, since silicon layer  35  has a thickness of a few micrometers, it enables to stop the etching, to avoid for the in-depth dispersion of the etching to become critical. As a numerical example, trenches  53  may have a thickness ranging between 1 and 2 μm. 
         [0044]    At the step illustrated in  FIG. 4C , a pre-deposition  37  of POCl 3  has been formed on the walls of trenches  53 , to enable, in a subsequent anneal step, the forming of regions heavily doped with phosphorus (N type) on the walls of wells  33 . A deoxidation may then be carried out to eliminate the oxide formed at the surface of the walls of trenches  53 . 
         [0045]    At the steps illustrated in  FIG. 4D , a new plasma etch is carried out to increase the depth of trenches  53  so that they cross heavily-doped N-type silicon layer  35  and penetrate into lightly-doped P-type substrate  31 . This step is carried out by means of mask  51 . An anneal enabling POCl 3  to diffuse into silicon wells  33  is then performed, to form heavily-doped N-type regions  37  on the upper part of the walls of trenches  53 , in wells  33 . It should be noted that the anneal may be performed before the step of  FIG. 4D  when deep trenches  53  are formed. As an example, trenches  53  may penetrate into silicon substrate  31  down to a depth ranging between approximately 10 μm and approximately 15 μm, as described hereabove. 
         [0046]    At the step illustrated in  FIG. 4E , a thin insulating layer  43  has been formed on the walls and the bottom of trenches  53 , for example, by thermal oxidation, to form a silicon oxide layer  43 . 
         [0047]    At the step illustrated in  FIG. 4F , trenches  53  have been filled with polysilicon or with any other material  45  well adapted to filling trenches  53 , for example, an oxide. Mask  51  is then removed. 
         [0048]    At the step illustrated in  FIG. 4G , electronic components have been formed in wells  33 , in the shown example, of diodes D 1  and D 2  identical to that of  FIG. 3 , which comprise P-type doped regions  39  formed at the surface of each of wells  33 . Regions  39  form the anodes of diodes D 1  and D 2 . In the shown example, contacts  57  and  59  are taken, respectively, on cathode region  37  and anode region  39  of diodes D 1  and D 2 . Heavily-doped N-type regions may be formed at the surface of wells  33 , at the level of regions  37 , to help the forming of the cathode contacts  59 . 
         [0049]    Specific embodiments of the present invention have been described. Various alterations and modifications will occur to those skilled in the art. In particular, it should be noted that the components described herein are examples only and that other components may be formed in insulated wells  33 , for example, protection diodes or other electronic components, for example, high-frequency power components. 
         [0050]    It should also be noted that structures similar to those disclosed herein may be devised by inverting all conductivity types and doping types. 
         [0051]    Such alterations, modifications, and improvements are intended to be part of this disclosure, and are intended to be within the spirit and the scope of the present invention. Accordingly, the foregoing description is by way of example only and is not intended to be limiting. The present invention is limited only as defined in the following claims and the equivalents thereto.
A structure including at least one electronic component formed in a semiconductor stack comprising a heavily-doped buried silicon layer of a first conductivity type extending on a lightly-doped silicon substrate of a second conductivity type and a vertical insulating trench surrounding the component. The trench penetrates, into the silicon substrate, under the silicon layer, down to a depth greater than the thickness of the space charge region in the silicon substrate.