FIELD OF THE INVENTION 
   The present invention relates to operational amplifiers and, more particularly, an operational amplifier having a cascode stage that includes an improved gain boosting amplifier. 
   BACKGROUND OF THE INVENTION 
   With the trend of power supplies for portable systems continuously decreasing to lower supply voltages, analog designs must be adjusted proportionately to be operable within the lower supply voltage requirement. Of all analog circuit designs, operational amplifiers are a challenge to modify in that an operational amplifier typically requires high open-loop gain and high-frequency response to minimize errors in the output voltage. In addition, operational amplifiers typically require high output swing to maximize the signal-to-noise ratio, especially in low-supply applications. Obtaining high open-loop gain may be achieved by increasing the output resistance. One way to increase output resistance is through the use of a folded cascode. In addition, gain boosting of the cascode devices may enhance the open-loop gain. An increase in output resistance, however, exists often at the expense of output swing. Thereby, in amplifiers that employ gain-boosting of cascode devices to achieve high gain, there exists a problem in achieving a wide output swing near the power supplies without significant complexity or distortion. 
   Specifically, a simplified version of a cascode (not shown) comprises a top and bottom cascode transistor connected such that the drain of the top couples to the source of the bottom cascode transistor. This simple cascode increases the output resistance by a factor of g m r o , wherein g m  is the small-signal transconductance and r o  is the small signal output resistance. Thereby, the voltage gain is increased by the same factor. Although a voltage equivalent to the drain-to-source saturation voltage V DS,SAT  is necessary to saturate the bottom cascoded transistor, a safety margin voltage V margin  is added to ensure that the bottom transistor operates in the saturation region. Thus, taking into account the voltage necessary to keep both cascoded transistors in saturation, the maximum swing from supply is two times the drain-to-source saturation voltage V DS,SAT  plus the margin voltage V margin . Since the saturation voltage V DS,SAT  and the margin voltage V margin  are approximately 200 mV, the difference in output swing can be very large with respect to a low power supply. The addition of a gain boosting amplifier increases the output resistance by the additional gain of A, where A is the gain of the amplifier. The output swing limitation, however, further increases by one threshold voltage V T , wherein the output swings to within twice the saturation voltage V DS,SAT , the margin voltage V margin , and one threshold voltage V T . 
   Specifically, referring to  FIG. 1 , amplifiers A 1 , A 2 , A 3 , and A 4  amplify the gate inputs of transistors, MP 3 , MP 4 , MN 3 , and MN 4 , respectively. Amplifiers A 1 , A 2 , A 3  and A 4 , provide an increase in the output resistance through boosting the gain of the cascode devices MP 3 , MP 4 , MN 3  and MN 4 . Accordingly, the output resistance is increased as is shown in the following equation: 
             r   out     ≈     1       g   ds1     /         (     A   +   1     )     ⁢     g   m3         g   ds3                 
wherein g m3  is the small-signal transconductance; and g ds1  and g ds3  are the transconductance relative to the drain-to-source connection of transistors MP 1  and MP 3 , respectively. Amplifiers A 1 , A 2 , A 3  and A 4 , are added in an effort to achieve a high output impedance, wherein the output nodes swing very close to the supply rails. Transistors MP 3 , MP 4 , MN 3  and MN 4 , however, shift out of saturation and into the triode region, when these transistors MP 3 , MP 4 , MN 3  and MN 4  should remain in saturation. Initially, when transistors, MP 3 , MP 4 , MN 3  and MN 4 , shift into the triode region, the gain and the large output resistance at each output node is lost. In an effort to regain the large output resistance and thereby increase the gain of the operational amplifier, there is a need for a cascode circuit design that keeps transistors, MP 1 –MP 4  and MN 1 –MN 4 , biased in saturation.
 
   More particularly, in  FIG. 1 , amplifier A 1  boosts the small-signal transconductance g m3  of transistor MP 3 . Specifically, the source of transistor MP 3  couples to an input of amplifier A 1  and amplifier A 1  couples to receive the bias voltage V bias1 . The feedback from the source of transistor MP 3  guarantees that the source of transistor MP 3  will always be equal to voltage V bias1 . The objective is for the drain-to-source voltages of transistors, MP 1  and MP 3 , to be small and always in saturation. As a result, the output resistance is multiplied by the value of the amplifier A plus one. The objective as explained previously is to bias each cascode transistor such that the outputs,  30  and  32 , of the cascode stage are enabled to swing close to either power supply rail. The common-mode feedback circuit  34  controls the common-mode of these differential outputs,  30  and  32 . 
     FIGS. 2A–D  display various known simple amplifier designs,  40 ,  42 ,  44 , and  46 . Specifically, the amplifiers,  40  and  42 , of  FIGS. 2A and 2B  include a current mirror transistor pair, MP 20 , MP 21 , MN 22 , and MN 23 , respectively. Input transistors MN 20  and MN 21  of amplifier  40  connect to the respective legs of the current mirror transistor pair, MP 20  and MP 21 . A differential input, IN 1  and IN 2 , couples across the gates of transistors, MN 20  and MN 21 . Accordingly, an output terminal Out is formed by the drain of both FETs, MP 21  and MN 21 . A current source I 1  couples to the source nodes of FETs, MN 20  and MN 21 .  FIG. 2B  illustrates the p-type amplifier  42 , wherein the differential input, IN 3  and IN 4 , couples across the gates of transistors, MP 22  and MP 23 . A current source  12  connects to the source of each transistor, MP 22  and MP 23 , wherein each transistor couples to a respective leg of the current mirror, MN 22 , and MN 23 . 
   In the alternative, known amplifier designs,  44  and  46 , include current mirrors made from respective transistor pairs, MN 24 , MN 25 , MP 24  and MP 25 . Specifically, the current mirror, MN 24  and MN 25 , connects to separate respective inputs instead of connecting to input transistors as is shown in  FIGS. 2A and 2B . Current sources I 3  and I 4  of amplifier  44  connect the current mirror, MN 24  and MN 25 .  FIG. 2D  illustrates the n-type transistor amplifier  44  version of the amplifier  46  of  FIG. 2C . 
   Since the amplifier A 1  of  FIG. 1  must supply voltage to the gate and source of transistor MP 3  and the drain of transistor MP 1 , the source-to-drain voltages of both transistors, MP 1  and MP 3 , must be extremely small to enable that the drain of MP 3  to swing close to the supply rail voltage. At the maximum, the drain-to-source voltages of either transistor, MP 1  and MP 3 , may be 400 mV. As a result the inputs of amplifier A 1  will be within the range of a few millivolts (mV) away from the supply rail voltage. If, however, each input, IN 1  and IN 2 , of amplifier  40 , for example, are 400 mV below the supply rail voltage, there will not be enough headroom for the p-channel mirror, MP 20  and MP 21 . 
   One approach to generate an increase in the voltage headroom at the drains of transistors, MP 26  and MP 27 , is to couple additional transistors MN 28 , MN 29 , MN 30 , and MN 31 , configured as source followers at the inputs or gates of MN 26  and MN 27  of amplifier  50  as is shown in  FIG. 3 . These additional transistors configured as source followers will provide level shifting of the voltage at the drain nodes of each transistor of the current mirror, MP 26  and MP 27 . The objective is to enable the inputs, IN 9  and IN 10 , to be very close to both supply rails. This design, however, is not an efficient one since an additional number of transistors are needed to effectively level shift the voltage. Disadvantageously, these additional transistors do not contribute to the gain of the boosting amplifier. 
   Some other solutions employ more complex gain-boosting amplifiers for obtaining a wide-swing for the cascode stage. These designs are not efficient, however, due to their complexity. Another simple alternative includes connecting the source of a transistor to the source of the cascode input transistor. This solution, however, can increase distortion when the cascode is used in the signal path such as a folded cascode amplifier. 
   Thus, there still exists a need for an gain-boosting amplifier design that provides level shifting of the voltages without much complexity. Particularly, this type of implementation is essential in the case where there is a need for high bandwidth within the amplifier design. 
   The present invention is directed to overcoming, or at least reducing the effects of one or more of the problems set forth above. 
   SUMMARY OF THE INVENTION 
   The following presents a simplified summary in order to provide a basic understanding of one or more aspects of the invention. This summary is not an extensive overview of the invention, and is neither intended to identify key or critical elements of the invention, nor to delineate the scope thereof. Rather, the primary purpose of the summary is to present some concepts of the invention in a simplified form as a prelude to the more detailed description that is presented later. 
   To address the above-discussed deficiencies of low voltage amplifiers, the present invention teaches an operational amplifier having a cascode stage that includes improved gain-boost amplifiers in an effort to increase the voltage headroom within the amplifier to make provision for a wider high-swing for use in low voltage applications. This design maximizes the available dynamic range for applications having low supply voltage requirements. The improved amplifier includes a differential pair of input transistors connected to a current mirror, wherein a pair of current sources supply current to each lead of the current mirror. A transistor, having a source follower configuration, couples between a third current source and the second power supply rail. This transistor is biased by one of the leads of the current mirror. Accordingly, the coupling of the transistor and the current source form the output of the amplifier. Effectively, the amplifier consists of an effective level shift and a series common-drain, common-gate amplifier. A reduction in transconductance g m  from the series combination is compensated by a current mirror ratio (K:1) between the level shift and the common-drain, common-gate amplifier. Specifically, the size of one of the transistors in the differential pair is a multiple integer (K) times the size of the other transistor in the differential pair. In addition, the size of one of the transistors in the current mirror is a multiple integer (K) times the size of the other transistor in the current mirror. Moreover the amount of current supplied by the second current source is a multiple integer (K) times the amount of current provided by the first current source. 
   In accordance with the principles of the present invention, there is disclosed herein an improved gain boosting amplifier for use in a cascode stage of an operational amplifier. This improved gain boosting amplifier provides more voltage headroom to keep the transistors of the amplifier in saturation particularly when the gain boosting amplifier is used in low voltage applications. 
   An improved operational amplifier includes an cascode stage coupled between an input stage and an output stage. The cascode stage includes a high swing folded cascode with a pair of gain boosting amplifiers to provide bias on the high-side of the folded cascode and a pair of gain boosting amplifiers that provide bias on the low-side of the folded cascode. One gain boosting amplifier of the pair of high-side gain boosting amplifiers has the same design as the improved amplifier in accordance with the present invention. In addition one gain boosting amplifier of the pair of low-side gain boosting amplifiers has the same design as the improved amplifier in accordance with the present invention. 
   The advantages include but are not limited to a high swing folded cascode, having an improved gain boosting amplifier that provides level shifting of voltages without much complexity. This enhanced design provides substantial benefit in applications having a need for a high bandwidth amplifier design. This amplifier can provide sufficient gain while allowing the output of the cascode to swing within two saturation voltages V Dsats  (approximately twice the difference between the gate-to-source voltage V GS  and the threshold voltage V T ) of either power supply. This novel gain boosting amplifier uses less transistors than conventional designs while providing more gain than a simple single transistor amplifier with less distortion. Moreover, this amplifier design provides a simple solution that requires less die area. This simplicity allows for wider bandwidths. Through the use of this amplifier design applications that employ gain-boosting of the cascode devices to achieve high gain will be able to achieve wide output swing near the power supplies without significant complexity nor distortion. 
   The following description and annexed drawings set forth in detail certain illustrative aspects and implementations of the invention. These are indicative of but a few of the various ways in which the principles of the invention may be employed. 


   
     BRIEF DESCRIPTION OF THE DRAWINGS 
     For a more complete understanding of the present invention and the advantages thereof, reference is now made to the following description taken in conjunction with the accompanying drawings in which like reference numbers indicate like features and wherein: 
       FIG. 1  is a known operational amplifier, having a cascode stage that includes gain boosting amplifiers; 
       FIGS. 2A ,  2 B,  2 C and  2 D illustrate known gain boosting amplifiers; 
       FIG. 3  displays a known enhanced gain boosting amplifier; 
       FIG. 4  shows a high-side gain boosting amplifier having N-channel inputs in accordance with the present invention; and 
       FIG. 5  illustrates a low-side gain boosting amplifier having P-channel inputs in accordance with the present invention. 
   


   DETAILED DESCRIPTION OF PREFERRED EMBODIMENTS 
   One or more exemplary implementations of the present invention will now be described with reference to the attached drawings, wherein like reference numerals are used to refer to like elements throughout. The various aspects of the invention are illustrated below in an improved gain boosting amplifier, although the invention and the appended claims are not limited to the illustrated examples. 
   The present invention is best understood by comparison with the prior art. Hence, this detailed description begins with a discussion of known gain boosting amplifier design as implemented within an operational amplifier shown in  FIG. 1 . As explained previously in the Background section, amplifiers A 1 , A 2 , A 3 , and A 4  amplify the gate inputs of transistors, MP 3 , MP 4 , MN 3 , and MN 4 , respectively. Amplifiers A 1 , A 2 , A 3  and A 4 , provide an increase in the output resistance through boosting the gain of the cascode devices MP 3 , MP 4 , MN 3  and MN 4 . Accordingly, the output resistance is increased as is shown in the following equation: 
             r   out     ≈     1       g   ds1     /         (     A   +   1     )     ⁢     g   m3         g   ds3                 
wherein g m3  is the small-signal transconductance; and g ds1  and g ds3  are the transconductance relative to the drain-to-source connection of transistors MP 1  and MP 3 , respectively. Amplifiers A 1 , A 2 , A 3  and A 4 , are added in an effort to achieve a high output impedance, wherein the output nodes swing very close to the supply rails. Transistors MP 3 , MP 4 , MN 3  and MN 4 , however, shift out of saturation and into the triode region, when these transistors MP 3 , MP 4 , MN 3  and MN 4  should remain in saturation. Initially, when transistors, MP 3 , MP 4 , MN 3  and MN 4 , shift into the triode region, the gain and the large output resistance at each output node is lost. In an effort to regain the large output resistance and thereby increase the gain of the operational amplifier, there is a need for a cascode circuit design that keeps transistors, MP 1 –MP 4  and MN 1 –MN 4 , biased in saturation.
 
   More particularly, in  FIG. 1 , amplifier A 1  boosts the small-signal transconductance g m3  of transistor MP 3 . Specifically, the source of transistor MP 3  couples to an input of amplifier A 1  and amplifier A 1  couples to receive the bias voltage V bias1 . The feedback from the source of transistor MP 3  guarantees that the source of transistor MP 3  will always be equal to voltage V bias1 . The objective is for the drain-to-source voltages of transistors, MP 1  and MP 3 , to be small and always in saturation. As a result, the output resistance is multiplied by the value of the amplifier A plus one. The objective as explained previously is to bias each cascode transistor such that the outputs,  30  and  32 , of the cascode stage are enabled to swing close to either power supply rail. The common-mode feedback circuit  34  controls the common-mode of these differential outputs,  30  and  32 . 
     FIG. 4  illustrates the novel gain boosting amplifier in accordance with the present invention that may be implemented in the operational amplifier design shown in  FIG. 1 . This amplifier includes input that will be very close to the power supply rails, wherein the level shifting circuitry of the amplifier does not add much complexity to the design. Specifically, the amplifier of  FIG. 4  may substitute in for amplifier A 1  in the operational amplifier design illustrated in  FIG. 1 . As shown, amplifier  60  includes a differential pair of input transistors, MN 11  and MN 10 , connected to a current mirror, MP 11  and MP 10 , wherein a pair of current sources, i 10  and I 11 , supply current to each lead of the current mirror. Transistor MP 12 , having a source follower configuration, couples between a third current source I 112  and the second power supply rail GND. This transistor MP 12 is biased by one of the leads of the current mirror at node A. Accordingly, the coupling of the transistor MP 12  and the current source I 112  form the output Out 10  of the amplifier. Effectively, transistor MP 12  provides the level-shifting feature to move away from the supply rail. Specifically, transistors, MN 11  and MN 10 , are n-channel transistors. A bias voltage reference V bias1  biases the gate of transistor MN 11  and the feedback from the source of transistor MP 3  couples to the gate of transistor MN 10.  This implementation still works when the common-mode of amplifier  60  is located close to the power supply rails. As a result, there will be ample head-room for this amplifier implementation. 
   Effectively, the amplifier consists of an effective level shift and a series common-drain, common-gate amplifier. A reduction in transconductance g m  from the series combination is compensated by a current mirror ratio (K:1) between the level shift and the common-drain, common-gate amplifier. Specifically, the size of transistor MN 11  is a multiple integer (K) times the size of the transistor MN 10 . In addition, the size of transistor MP 11  in the current mirror is a multiple integer (K) times the size of transistor MP 10 . Moreover, the amount of current supplied by current source I 10  is a multiple integer (K) times the amount of current provided current source I 11 . 
   In operation, if the voltage at the gate of transistor MN 10  increases, the source of transistor MN 10  pulls up and, as a result, the source of transistor MP 10  pulls up. Furthermore, the gate of transistor MP 10  pulls up and the gate of transistor MP 11  pulls up. If the bias voltage V bias1  remains the same while the voltage at the source of transistor MP 3  pulls up, it will reduce the effective transconductance g m  of both transistors, MN 10  and MN 11 . Since the gate of transistor MN 11  is primarily fixed, the gate-to-source voltage V gs  of transistor MP 11  will decrease, which will start to turn transistor MP 11  off. Both current sources, I 10  and I 11 , have a ratio of K:1. Accordingly, transistors, MN 11  and MP 11 , in comparison to transistors, MN 10  and MP 10 , have a K:1 ratio as well. The voltage at the drain of transistor MP 11  decreases. Transistor MP 12  couples in a source follower configuration which will tend to pull down. Accordingly, the gate of transistor MP 3  will pull down. Node A is the only high impedance node. Thereby, if there was needed compensation, a capacitor could be placed on this node. The voltage gain of A v  is approximately the gain of the amplifier, as follows: 
   
     
       
         
           
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   The size W/L of each transistor may be varied, wherein W refers to width and L refers to length. In this design, the size W/L of the transistors MN 11 , MN 10 , MP 11 , and MP 10  are altered to generate greater headroom. 
   While the principles of the present invention have been demonstrated with particular regard to the structures and methods disclosed herein, it will be recognized that various departures may be undertaken in the practice of the invention. The scope of the invention is not intended to be limited to the particular structures and methods disclosed herein, but should instead be gauged by the breadth of the claims that follow. 
   Those of skill in the art will recognize that the physical location of the elements illustrated in  FIGS. 4 and 5  can be moved or relocated while retaining the function described above. For example, Those skilled in the art would recognize that it is possible to increase the gain of the amplifier by increasing the current source and the transistor ratios (i.e. 8:1). 
   Advantages of this design include but are not limited to a high swing folded cascode, having an improved gain boosting amplifier that provides level shifting of voltages without much complexity. This enhanced design provides substantial benefit in applications having a need for a high bandwidth amplifier design. This amplifier can provide sufficient gain while allowing the output of the cascode to swing within two saturation voltages V Dsats  (approximately twice the difference between the gate-to-source voltage V GS  and the threshold voltage V T ) Of either power supply. This novel gain boosting amplifier uses less transistors than conventional designs while providing more gain than a simple single transistor amplifier with less distortion. Moreover, this amplifier design provides a simple solution that requires less die area. This simplicity allows for wider bandwidths. Through the use of this amplifier design applications that employ gain-boosting of the cascode devices to achieve high gain will be able to achieve wide output swing near the power supplies without significant complexity nor distortion. 
   The reader&#39;s attention is directed to all papers and documents which are filed concurrently with this specification and which are open to public inspection with this specification, and the contents of all such papers and documents are incorporated herein by reference. 
   All the features disclosed in this specification (including any accompanying claims, abstract and drawings) may be replaced by alternative features serving the same, equivalent or similar purpose, unless expressly stated otherwise. Thus, unless expressly stated otherwise, each feature disclosed is one example only of a generic series of equivalent or similar features. 
   The terms and expressions which have been employed in the foregoing specification are used therein as terms of description and not of limitation, and there is no intention in the use of such terms and expressions of excluding equivalents of the features shown and described or portions thereof, it being recognized that the scope of the invention is defined and limited only by the claims which follow.
A circuit topology for gain boosted high-swing folded cascode has been improved to maximize the available dynamic range in applications having low supply voltage requirements. The circuit includes an improved gain boost amplifier that maximizes the available dynamic range for applications having low supply voltage requirements. The improved gain boosting amplifier includes a differential pair of input transistors connected to a current mirror, wherein a pair of current sources supply current to each lead of the current mirror. One lead of the current mirror is level-shifted by a transistor coupled to another current source, wherein the coupling of the transistor and the current source form the output of the amplifier. Effectively, the amplifier consists of a level shifter and a series common-drain, common-gate amplifier. A reduction in transconductance g m from the series combination is compensated by a current mirror ratio (K:1) between the level shift and the common-drain, common-gate amplifier.