There is considerable interest in using InS to replace the semiconductor CdS (cadmium sulfide) in photoelectronic devices.  β-InS has a tunable band gap, which makes it attractive for photovoltaic applications, and it shows promise when used in conjunction with TiO in solar panels, indicating that it could replace CdS in that application as well. Cadmium sulfide is toxic and must be deposited with a chemical bath, but indium(III) sulfide shows few adverse biological effects and can be deposited as a thin film through less hazardous methods.
Thin films β-InS can be grown with varying band gaps, which make them widely applicable as photovoltaic semiconductors, especially in heterojunction solar cells.
Plates coated with beta-InS nanoparticles can be used efficiently for PEC (photoelectrochemical) water splitting.