PtSi can be synthesized in several ways. The standard method involves depositing a thin film of pure platinum onto silicon wafers and heating in a conventional furnace at 450–600 °C for a half an hour in inert ambients. The process cannot be carried out in an oxygenated environment, as this results in the formation of an oxide layer on the silicon, preventing PtSi from forming.
A secondary technique for synthesis requires a sputtered platinum film deposited on a silicon substrate. Due to the ease with which PtSi can become contaminated by oxygen, several variations of the methods have been reported. Rapid thermal processing has been shown to increase the purity of PtSi layers formed. Lower temperatures (200–450 °C) were also found to be successful, higher temperatures produce thicker PtSi layers, though temperatures in excess of 950 °C formed PtSi with increased resistivity due to clusters of large PtSi grains.