Indium nitride (InN) is a semiconducting material with a narrow bad gap of 0.7 eV and a high electron mobility and velocity, giving it potential uses in, for example, infra-red photovoltaics and high frequency transistors. Conventional chemical vapor deposition (CVD) of InN, using the common precursors trimethyl indium (TMI, In(CH3)3) and ammonia (NH3), is limited by the low thermal stability of the material, which decomposes into metallic indium and nitrogen gas already at 500 °C. By utilizing low temperature atomic layer deposition (ALD) as a time-resolved alternative to CVD the low thermal stability could be circumvented as depositions could occur below the decomposition temperature.