"Compared with graphene, 2H-MoS2 possesses a non-zero bandgap and thus has an unlimited potential for electronic, spintronic, and optoelectronic applications" (Cao and Chen, 2019). Therefore, the study of "phonon scattering mechanisms is crucial to its device applications because the heat flow and transport are the basic processes functioning at various temperatures". Cao and Chen, 2019, have experimentally studied the temperature dependence of frequency and linewidth of the Raman peaks from 2.2 to 1000 K. "The cubic anharmonicity is found to be dominant at low temperatures, and quartic anharmonicity predominates at high temperatures" (Cao and Chen, 2019).