The results presented above show that the B-pulses does not affect the composition, crystal structure, chemical bonds, or morphology of the deposited GaN films. The noticeable effect of the B-pulse is an increase in GPC compared to when not using a Bpulse. We hypothesize that the increase in GPC is explained by more favorable surface chemistry for the nitridation step in the deposition: After the TEG pulse, the surface will be saturated by Ga atoms bearing one or two ethyl ligands. If no B-pulse is used, the elimination of these ethyl ligands is done by the NH3 plasma pulse which also nitridize the surface. If a B-pulse is used, the B-pulse could induce chemistry that eliminates the ethyl ligands from the surface, replacing them with other surface species that are easier to remove during the nitridation.