A higher gain in photodetectors comes at the cost of operational speed. The light modulation of 5 Hz excludes contributions from trap states with trapping or de-trapping times sufficiently longer than 0.2 s and, therefore, the initially designed long trapping constants require slower light modulation frequencies, which may not be practical for detector operation. For further optimization of low-temperature device operation, a second detector array with five pixels was fabricated in the same way as Device A. One pixel denoted Device B1 is discussed in the main text and Devices B2-B5 in the Supplementary Information. This time, the QD ink was freshly prepared and stored under air and moisture-free conditions until the nanoprinting, ensuring negligible surface oxidation. The results of the temperature-dependent photoresponse for Devices B1-5 (Figures ) are similar in appearance among themselves with a vertical line of no photoresponse (accompanied with the phase change) coinciding with the CNP (Figure , dashed black line), and an area with a change of the transferred charge carrier type (Figure , dotted white line). The charge transfer under illumination was locally probed with time traces, at the points P1B1, P3B1, and P4B1 photo-induced holes and at point P2B1 photo-induced electrons were transferred to the graphene (Figure ).