The monoanionic amidinate and guanidinate bidentate ligands (Figure and) have been used to create a large family of volatile M-N bonded ALD precursors. These compounds exhibit higher thermal stability than amides and generally produce highquality films. However, they remain susceptible to thermolysis via β-hydride elimination or carbodiimide disinsertion (CDI). These thermolysis processes have hindered the deposition of first-row transition metal metallic films by ALD, as their decomposition temperatures are much lower than those required for successful deposition. Additionally, high-valent metal amidinates and guanidinates suffer from low volatility and slow surface reactivity, or both, due to the crowding of the metal centre by the bulky bidentate ligands. We observed this when depositing InN by ALD, as multiple consecutive pulses of these precursors were required to saturate the surface. This study also revealed that smaller and less electron-donating substituents on the central substituted carbon led to higher quality InN films. This led us to the monoanionic triazenide ligand, which is isoelectronic to amidinates and guanidinates but differs by a nitrogen atom instead of a substituted carbon (Figure ). Replacing the substituted carbon with a nitrogen would also effectively block the CDI disinsertion pathway.