to the Si/SiO2 substrate and to interactions with the Si/SiO2 substrate. Both strain and doping are typically observed for both CVD-grown and transferred as well as exfoliated graphene on Si/SiO2. Upon exposure to the lowest dose at 1343 µC/cm 2 , the graphene experienced a higher compressive strain (~0.26 %) and became less hole doped (𝑛 ~ 0.2 x 10 13 cm 2 ). With increasing dose up to ~5000 µC/cm 2 , the hole concentration remained the same but resulted in a relaxation in the strain. This is indicated by the downward arrow in Fig. . At doses above the inflection point (> 5000 µC/cm 2 , matching the inflection points observed in Figs. and), the strain remaining constant ~0.18% but hole concentration increased. This is indicated by the upward arrow in Fig. . At the highest dose, the hole concentration reached ~1.1 x 10 13 cm 2 , over a factor of two higher than the unpatterned graphene.