For example, structure patterning using an electron beam (for example, in e-beam lithography, EBL) is a promising approach for designing functional components that include ZIFs in various applications such as sensors, low-k dielectrics, and coatings . The benefits of using an electron beam for patterning ZIF include high spatial resolution, creating complex patterns, and compatibility with standard micro-and nanofabrication processes. Controlled application of an electron beam enables a controlled local structural rearrangement within the ZIF crystals down to the unit cell level, i.e., controlled manipulation of the longrange order while retaining short-range structure , allowing tailor-made patterning of ZIF/MOF materials . However, to understand the structural changes, stability, and amorphization behavior of ZIFs, detailed knowledge about the underlying mechanism of sequential loss of crystallinity of ZIFs under electron beam irradiation is required. Furthermore, this can contribute to developing new synthesis methods, improved materials design, and enhanced performance of ZIF-based applications., Fortunately, such insights can be gained through detailed studies using advanced transmission electron microscopy (TEM). TEM is a very valuable tool for investigating local structures, structural transformations, and MOF's stability during the exposure of electron beams on the nanoscale . Recent developments in TEM, such as enhanced flexibility in selecting the appropriate acceleration voltage, using low electron doses, and observing the material at low sample temperatures, have been instrumental in minimizing the effect of the electron beam on the beam-sensitive MOFs during HRTEM imaging. The structural stability of the crystalline sample under electron beam exposure is measured by the fading of the intensity of Bragg planes in a diffraction pattern as a function of cumulative electron dose. Electron dose or electron fluence refers to the total number of electrons that hit a unit area of the sample during imaging. It is typically measured in electrons per square angstrom (e -Å -2 ). Electron dose rate or electron flux density is the rate at which electrons pass through a given area, typically measured in electrons per square angstrom per second (e -Å -2 s -1 ). The cumulative electron dose up to which the structural integrity of ZIF-8 is maintained for various lattice (Bragg) planes is referred to as the critical dose.