A pulsed-CVD cycle consisted of x seconds (s) SiCl4, z s purge, y s C2H4 and another z s purge. These steps will be simplified as Si-pulse -purge -C-pulse -purge in the rest of this work. Two continuous CVD reference depositions with a SiCl4 flow of 100 sccm and C2H4 flow of 50 sccm was also performed at ptotal= 1 kPa, T= 1000 ℃ and 1200 ℃. During the deposition, the graphite susceptor holding the substrate was heated inductively, and its temperature was monitored by an optical pyrometer. The total deposition time, i.e. the sum of all precursor and purge pulses, was kept constant at 30 minutes for all samples. In this work, the growth rate is represented by growth per cycle (GPC) because the total time that the substrate is exposed to the precursors within 30 minutes differs depending on the duration of precursor pulse and purge. Structured graphite substrates (25 mm x 50 mm x 3 mm) with trenches having a depth of 1000 μm and various widths from 250 μm to 1000 μm were used in the conformal studies, whereas flat graphite substrates (25 mm x 60 mm x 1.5 mm) were used in the GPC studies. The error bars for SC in the conformal studies were calculated by the propagation of uncertainty using the following equation :