Finally, a comparison of the electrical transport properties along the principal x, y and z directions to the average values discussed here shows relatively minimal anisotropy (Figs S7-S9, ESI † ). The Seebeck coefficients of all three systems are essentially isotropic. The conductivity in STO and BTO is also largely isotropic, resulting in minimal variability in the PFs and κ el . On the other hand, the σ in CTO is modest such that the a and b directions represent "easy" and "hard" axes for transport, respectively, and the PFs are ∼ 0.1 mW m -1 K -2 (∼ 15 %) larger/smaller than the average. We previously employed this procedure to calculate the electrical properties of SnS and SnSe and obtained very good agreement with experimental measurements. The measurements on 20% La-doped cubic SrTiO 3 obtained a σ , S and PF on the order of 150 S cm -1 , -250 µV K -1 and 0.9 mW m -1 K -2 at 1000 K. Based on the reported lattice constant and doping level, we estimate the carrier concentration of 3.4 × 10 21 cm -3 , and with a comparable n = 2.5 × 10 21 cm -3 we predict a larger σ = 648 S cm -1 , a smaller absolute S = -123 µV K -1 , and a similar PF of 0.98 mW m -1 K -2 . Measurements on (La 0.12 Sr 0.88 ) 0.95 TiO 3 yielded σ ≈ 100 S cm -1 , S ≈ -200 µV K -1 and S 2 σ ≈ 0.3 -0.4 mW m -1 K -2 at 900 K, and using a estimated comparable n = 2.5 × 10 20 cm -3 we predict comparable σ = 71 S cm -1 , S = -299 µV K -1 and S 2 σ = 0.63 mW m -1 K -2 . Finally, measurements on Nb-doped SrTiO 3 films, with n ≈ 1.5 -2 × 10 21 in the thickest samples, obtained a maximum σ and S around 600 S cm -1 and -120 µV K -1 at room temperature, and we predict σ = 238 S cm -1 and S = -44 µV K -1 with n = 2.5 × 10 21 cm -3 . Given that the vacancy/dopant concentrations in these studies are up to several tens of at.%, and are likely to impact the electronic structure and transport properties beyond simply increasing the n, we consider our calculations to be in reasonable agreement with the measurements. STO is the most widely-studied of the three perovskites, but we were able to find measurements on a variety of (Ca 1-x La x )TiO 3-δ materials to compare our predictions for CTO against. At 1000 K, the pristine material was reported to have a negligible σ = 10 -5 S cm -1 , but introducing O vacancies produced a much larger n ≈ 2 × 10 20 cm -3 and σ ≈ 100 S cm -1 with S = -375 µV K -1 . With n = 2.5 × 10 20 , we our calculations predict σ = 36 S cm -1 and S = -331 µV K -1 , which we again consider to be reasonable agreement. For a variety of La-doped samples, for which we would expect n > 10 21 cm -3 , maximum σ and S around 250 S cm -1 and -175 µV K -1 were measured at 1000 K, and using n = 10 21 cm -3 we predict values of 144 S cm -1 and -215 µV K -1 respectively.