Figure shows the fabrication process starting with a graphene FET made out of commercially available, chemical vapor deposited graphene (see Experimental Section). After the graphene FET was produced, HgTe QDs were selectively deposited on top of the graphene channel by electrohydrodynamic nanoprinting (See Experimental Section). The HgTe QDs were synthesized following the protocol of Shen et al. to obtain nonaggregated QDs, which is paramount for avoiding clogging of the printing nozzle. Nanoprinting enables a precise deposition of QDs on top of the graphene channel (5 µm width, 50 µm length) and by specifically preventing the deposition of QDs on top of the gold electrodes, a potential parallel conductance through the narrow bandgap semiconductor was excluded. Therefore, the photoactive area is of a smaller dimension (5 × 40 µm) compared with the graphene transistor.