Among the most influential factors on the physicochemical mechanisms of graphene nucleation and growth, including the atomic-level steps, is the CVD growth temperature. In other words, the process of graphene nucleation and the proceeding growth is a result of adsorption, desorption, and adsorbate (active atoms) migration mechanisms, each highly influenced by the process temperature. Reports on surface kinetics that consider the details of surface kinetics give evidence that with the increase in the reaction temperature, the growth rate of CVD graphene film rises. It is generally believed that a higher temperature reduces the nucleation density of graphene, as according to . Lui et al. proposed increasing the CVD process temperature, which would reduce surface roughness of the substrate, decreasing active nucleation sites and increasing the mobility of active species, thereby enhancing growth quality . Growth temperatures for CVD close to or above the melting point of Cu (T m of Cu = 1084 °C) usually result in high-quality graphene with monolayer, uniform, crystalline, continuous, and low defect density within the graphene film. This is due to a fast dehydrogenation rate of the hydrocarbon feedstock and/or an improved probability that active carbon species have sufficient energy to overcome the energy barrier for attaching to the surface for graphene film growth .