Location and splitting of the C-exciton. We find that the electrochemically induced bandgap renormalization probed for the A-and B-exciton (Fig. , red and green trace) is also reflected in the potential-dependent absorption of the C-exciton (Fig. , blue trace). While this may be fundamentally expected, is has not been previously demonstrated, and we speculate that its observation is facilitated by the much higher absorption intensity of the C transitions compared to the A and B transitions in the laterally smaller 20-25 nm large 2H-MoS2 nanosheets used in our experiments (e.g. compared to ref. 25). Moreover, we find clear signs of two separate bleaches for the C-exciton between 390 and 430 nm (Fig. ), which merge into a broad bleach at roughly -1.2 V. This is evidence for the theoretical prediction of two distinct band nesting features in MoS2 , which has previously been confirmed for bulk 2H-MoS2 , but, to the best of our knowledge, not for monolayer 2H-MoS2. First insights in higher energy transitions of various monolayer TMDCs are reported by Hong et al., but no distinction between different contributions to the C band in 2H-MoS2 was given. Although Fig. and the seemingly identical inflection points for the bleaching of the A/B-vs. the C-excitons at -1.2 V may suggest that the involved electron states are identical, this is fundamentally impossible. The A/B excitons require a point in the Brillouin zone for which ∇ 𝑘 𝐸 𝐶 = 0, while the definition of band nesting is ∇ 𝑘 𝐸 𝐶 ≠ 0 (and ∇ 𝑘 𝐸 𝐶 = ∇ 𝑘 𝐸 𝑉 ). Therefore, the involved electron states of the A/B excitons vs. the C-excitons must be located at different points in the Brillouin zone, but at roughly the same energy. Note that the corresponding hole state of the C excitons would be expected at a potential of > +1.7 V, which prevents its determination here due to the rapid degradation at such potentials.