The material carbon nitride has been a research attraction for quite a long time. Different methodologies have been used to deposit carbon nitride films with different bonding configurations. The plasma enhanced chemical vapour deposition (PECVD) using N2/C2H2 precursor gases produce hydrogenated amorphous carbon nitride (a-C:H:N) films which we have deposited on Si(100) substrates at 400 o C substrate temperature for 2 hrs with RF power of 600 W . Si-C-N in the form of nanocomposite thin films were deposited on Si(100), glass as well as steel substrates at different conditions by the process of magnetron sputtering using a Si-C target. A detailed analysis of the Raman spectra of Si-C-N deposited with a temperature variation as well as of carbon nitride with nitrogen flow rate has been published previously [1, 2, 3] A flow rate of 5 sccm was maintained for C2H2 while flow of nitrogen was varied as 5, 15, 30 and 60 sccm. The deposition chamber was pumped down to 10 -5 mbar by turbo molecular pump prior to inletting the precursor gases. The chemical composition of the deposited films was done by EDS. The concentration of nitrogen in film increased with the increase in nitrogen flow and reached nearly 15 at% at a nitrogen flow rate of 60 sccm. Increase of nitrogen percentage in the films leads to increase in clustering of sp 2 carbon. However, for more than 20% nitrogen, no further clustering takes place and the system attains saturation. Below 20% nitrogen, the fraction of sp 2 carbon is 25 to 30% similar as N free ta-C: H [1].