From microscopic photographs in the inset of Figure , Ag electrodes were successfully formed onto the p-Si and their effective areas are listed in Table . In the I-V measurements, forward and reverse I-V characteristics showed a behavior of typical diode and the device performance of the printed SBDs depends on the sintering time. The on/off current ratios (rectification ratios) in the printed SBDs were higher than that of the vacuum-deposited SBD and these ratios increased with sintering time, indicating an improvement of on/off performance of the SBD. These rectification ratios are summarized in Table . Furthermore, the shoulder appeared around the voltage of 1 V in the printed SBD of 5min and then it gradually decreased with the sintering time. The shoulder represents an excess current component which can be induced by inhomogeneous contact at the Ag/p-Si interface. On the other hand, the Ag electrode prepared by vacuum deposition showed a relatively low electrical resistivity (2.1×10 -6 Ω•cm) which is an almost equivalent to that of metal Ag (1.6×10 -6 Ω •cm). The vacuum-deposited SBD, however, exhibits low rectification ratio (2.04×10 2 ) in spite of its highest conductivity of the electrode. This implies that the conductivity of the electrode itself is irrelevant to the device performance. Thus, the high rectification ratio of the printed SBD and their I-V characteristics depended on the sintering time cannot be explained in terms of the physical properties of the electrode, such as the conductivity.