Methods for quantifying disorder in one dimension have previously been explored for quantifying topological protection for different degrees of 1D Anderson localization in straight TI waveguides. However, because our disordered corners are 2D distortions localized on single unit cells, we cannot follow an analogous strategy to that outlined in reference 38. To quantify the disorder in each simulated waveguide, we treated the two corners individually and adopted a simple method based on the percent deviation of each corner geometry from the original structure in Figure . For each disordered corner configuration, we defined a square enclosing only the corner unit cell and simply subtracted the resulting image from the corresponding image for the original bent waveguide structure. By integrating the absolute value of the subtracted image and normalizing to the number of pixels in the image, we obtained a measure of the percent deviation relative to the ordered structure. A schematic of this process is shown in Figure .