FTIR further supports the XRD data; as observed, the chain stretching mode disappears for r-BxC grown on the C-face compared to r-BxC grown on the Si-face in Figure , which is consistent with the triatomic chains being perpendicular to the electric field (s-polarized light). The onset of graphite formation is observed from the appearance of sp 2 -C(000ℓ) peaks at 1400 °C in Figure . r-BxC and pyrolytic graphite where found to grow to a similar extent and in a similar fashion, as seen from a comparison of the intensity of r-BxC(0003) and sp 2 -C(000ℓ) in Figure , and from the top-view micrograph in Figure . Rocking curve measurements of the (0003) planes for samples deposited above 1300 °C (Figure ) show a sharp component whose integral breadth is comparable to the substrate as well as a much broader component which decreases as the deposition temperature increases. Plan view SEM (Fig. ) show that the films deposited on C-face 4H-SiC at 1100 °C (Fig. ) and 1200 °C (Fig. ) were highly facetted and polycrystalline while the films deposited at higher temperatures were smoother. The films deposited at 1300 °C (Fig. ) and 1400 °C (Fig. ) constituted of percolated islands and continuous film were obtained at 1500 °C (Fig. ). The continuous films comprised distinct areas of boron carbide and graphite and hexagonal defects were observed for both materials (Figure ). The sample deposited at 1300 °C was selected for compositional analysis as it was not contaminated with graphite (as seen from Figure ). ToF-ERDA yielded B to C ratio of 4:1 (B -79.2 at.% ± 0.8 at.%, C -20.5 at.% ± 0.4 at.%) and with around 0.3 at.% of O and H below the detection limit of the technique.