We now investigate the device behavior under 1560 nm excitation. We use two lasers A and B (see methods: ASOPS) with a similar output power of 90 mW. We find a net photocurrent of 30 nA induced by only laser A (the first step in Figure ) which increases by 40 nA upon adding the illumination by laser B (the second step in Figure ). This result confirms the superlinear behavior also at telecom wavelengths, indicative of hot carrier injection. The I-V characteristics (Figure . 1g) displays a pronounced photocurrent under illumination by both lasers and a dark current roughly eight orders of magnitude smaller than in pure graphene (Supporting Information Section 2).