From the results above, ALD using 4 and water renders In2O3 films with properties comparable to the previously reported In2O3 films deposited using 1, albeit 4 seems to require higher deposition temperatures. A temperature window of 150 -275 °C for In2O3 films using 1 and H2O was reported, but slow surface kinetics of 1 were observed. This was then circumvented using a stop-flow process to give 1 more time to react with the surface. We cannot do stop-flow ALD in our ALD reactor, and therefore undertook a direct comparison between 1 and 4 by studying ALD of In2O3 using 1 and water in our reactor.