The so-far experimentally reported EMF switching molecular components typically remain functional at temperatures near absolute zero because their switching barriers are rather low. This stems mainly from the quasi-isotropic nature of the fullerene interior and largely ionic (i.e. non-directional) character of the metal-cage bonding. For example, the Gd@C82 molecular electret operates with a barrier of ca 0.25 kcal/mol (11 meV) at 1.6 K, and Li@C60, a multistate molecular switch in STM experiments, works at 5 K. Should the switch work in realistic data storage and processing, it should ideally have an energy barrier equal to or higher than 50kT, which turns to a comparatively large switching barrier of about 35-38 kcal.mol -1 at the working temperature of the present-day computers. If the energy barrier halves, the year-long stability reaches the day-long stability. 31 The variation of the switching barrier for relocation of titanium atom inside Ti@C70 versus the potential difference between source and drain electrodes under the effect of the gate potential, VG. (c) A schematic illustration of the spin-filtering process when VSD is applied. (d) The computed I/V characteristic of the Ti@C70-D5h (1). Averaged values for various connections of the system to electrodes. Note that the absolute values are reported here for the current for a more clear view of the spin asymmetry of the passing current, ISD. (e) 3D representation of a spinristor. The position of the enclosed metal can be controlled through a quadrupolar field, applied via source, drain, and a pair of gate electrodes that are separated from the fullerene by two layers of an isolator material that fixes the elliptical fullerene in its position between source and drain electrodes.