As an alternate procedure for SU-8 removal we describe here the procedure and resulting attack rate for SU-8 removal with a hydrogen inductively coupled plasma (ICP). This attack is useful for thin SU-8 layers (5 µm or less) or to clean up residues left after chemical removal of thick and highly polymerized SU-8 layers. Tanaka et al. recently attempted SU-8 removal with a hot-wire atomic hydrogen source, but resulted in incomplete removal even at elevated temperatures . Here we demonstrate complete removal at ambient temperature using a hydrogen inductively coupled plasma. Because of the low sputtering yield of hydrogen, the removal mechanism is not expected to be due to impact displacement, as is the case with argon plasmas, but due to the chemical reaction of plasma activated hydrogen. Consequently very low damage can be expected in delicate semiconductor substrates such as GaAs and InP. The fraction of the intial projectile kinetic energy transferred to the target is given by the masses of the projectile (m H ) and the target (m Ga ) as 4m 2 H /(m Ga -m H ) 2 = 8 × 10 -4 . As the mean ion energy in low pressure hydrogen plasmas is typically well below 100 eV , hydrogen Figure : Scanning electron microscopy image of a silver wire electrodeposited on a GaAs photovoltaic device through an SU-8 photoresist mask that was then removed by an ICP RIE hydrogen plasma. SU-8 residues (colored red) can be observed by the silver wires as the ICP RIE attack rate is also a function of the surface topography. The white scale bar is 2 µm long.