We also explored the role of surface temperature on the dissociation probabilities. It is well understood that in direct dissociation processes, surface temperature has a minimal effect. However, in some systems, surface temperature can influence the reaction barrier and dissociation dynamics. For example, in the dissociative chemisorption of CH 4 on a Pt(110)-(1×2) surface, increasing T s from 400 K to 600 K reduced the dissociation barrier height by 0.09 ± 0.02 eV, with an estimated surface temperature efficacy of 5.1. Motivated by such findings, we sought to understand the role of T s in the current system. Here, the temperature range was chosen based on previous literature, which indicates that prolonged annealing above 500 K can lead to the incorporation of oxygen atoms into the surface or the formation of a supergrating-like structure. To avoid such complications, we maintained T s well below 500 K. The measurements were performed at three translational energies: 0.28 eV, 1.04 eV, and 1.55 eV. Our studies show no significant effect of T s on S 0 , consistent with a direct dissociation process rather than a precursor-mediated one. We also conclude that the thermal energy of the surface is too low compared to the barrier height, and consequently no significant influence on the S 0 is seen.