To investigate the effect of the roughness at the Ag/p-Si interface to increment of n, rs and qB, surface and cross-sectional SEM observations were performed for the printed SBDs of sintering time of 5, 7.5, 10, 15, 30 min. It is reported that the local work function of vacuum-deposited Au layers on Cu are lower of c.a. 0.8 eV at the step edges, which strongly indicates the qB can be modified by the roughness at the Ag/p-Si interface. Figure , M represent surface observations of the printed Ag electrodes. At the sintering time of 5 min (Figure ), AgNPs Table . Effective area and extracted diode parameters for the printed and vacuum-deposited SBDs in the I-V analysis. . b Recorded at ± 3.0 V. c Estimated from the I-V data in the range of 0.2-0.5 V. started to melt and coalesce, forming continuously interconnected networks. Over the surface, 2-5 m size of pores were observed, which can be formed by removal of the solvents and the resin during drying and/or the first stage of the sintering. At the sintering time of 10 min (Figure ), AgNPs merged further, appearing 100-200 nm size of pores, which can be attributed to combustion of capping reagents on AgNPs. Subsequently there is no significant change in the morphology of the surface (Figure , J, M). Similar morphological results were obtained in the crosssectional observations as shown in Figure . These morphological results are qualitatively agreement with the increment of n and rs because, due to the formation of pores near the Ag/p-Si interface, the contact at the interface deviates from the ideal contact and also the fluency of electrons and holes is hindered. On the other hand, from the cross-sectional observations, Ag electrodes connected to p-Si and form smooth Ag/p-Si interface. There is no evidence indicating the existence of the step edges which can induce the increment of the local work function. Moreover, from the EDX elemental mapping of the cross-sections as shown in Figure , there is no evidence of an oxide layer and/or an alloyed layer at the Ag/p-Si interface. Thus, the increment of qB of the printed SBDs and their dependence on the sintering time cannot be explained in terms of the morphological effects of the electrode at the Ag/p-Si interface.