When both opposite charge carries such as n and p-type dopants are doped over carbon then the doping concentration is found to be more pronounced because the electron-deficient holes combine with electron rich atoms . Graphene having h-BN patches, functions like a pristine graphene. This is attributed to the fact that the nitrogen atom generates the conducting electrons, whereas the boron atom form holes after doping into the graphene lattice. Moreover, it has been reported that the thermal stability of B, N co-doped graphene is lower than N-doped graphene but higher than B-doped graphene. As per the earlier reports, if both boron and nitrogen are in adjacent position in order to form a covalent linkage in any carbon network then there will be variation in polarisation of both boron and carbon atoms owing to the electronegativity difference among the boron, carbon and nitrogen atoms. . Still there would be a challenging task to incorporate B and N individually into carbon network. Actually, there is a serious obstacle in the doping of boron during the thermal annealing with nitrogen owing to the fact that the mismatch between boron and carbon is higher than with carbon and nitrogen. Because of these two reasons, the doping of B is slower than N . Normally, both pyridinic and pyrrolic nitrogens are favoured at edges which are capable to utilise its unshared pair of electrons to generate a covalent linkage between boron and nitrogen. Owing to the fact that the non-bonding pair of electrons over the graphitic/pyrrolic nitrogen are involved in delocalisation with pi electron of adjacent carbon atoms, the feasibility of utilising the unshared pair of electrons to form a bond with boron atom is minimum. Thus, the final bonding structure of B, N co-doped graphene or any carbon network is decided by the doped structure of nitrogen .