Overall, the defect chemistry of CuI is rather straightforward. Native p-type conductivity is enabled by the formation of copper vacancies, the concentration of which can be fine-tuned by strict control of the copper chemical potential during synthesis, while the remaining intrinsic species have little to no effect on the defect landscape. Despite the small improvements in electronic properties after doping with S and Se reported in the literature, these dopants are predicted to be electronically benign, with deep transition levels that result in significant charge trapping. This is an example of the logical fallacy post hoc, ergo propter hoc, or "after this, therefore because of this". A number of factors could contribute to the prediction of deeper transition levels in the current work compared to those from Graužinyt ė et al.: a more thorough exploration of the potential energy surface for each defect state via use of the ShakeNBreak method; full geometric optimisation with hybrid functionals, rather than relaxation with semi-local functionals plus a hybrid functional single-shot on a volume-scaled structure; and the explicit inclusion of SOC during defect calculations to accurately model the position of the band edges. With these new insights on the electronic rôle of chalcogen dopants, it is instead proposed that indirect changes in host chemical potentials as a result of chalcogen doping have a greater impact on overall hole concentration. Furthermore, effects on crystallinity and morphology should be considered during experimental investigation of chalcogen doping, as this can be a further source of indirect improvements to opto-electronic performance.