On the other hand, charge-doping and bandgap changes reveal phosphorene conductance can be tailored by deposition of fullerenes. Since the bandgap value is directly proportional to the conductance (  HL/kT, where k is the Boltzmann constant and T the temperature), our results define a framework to explore the charge-transport and optoelectronic response of Phos-Fullerene nanostructures. As an illustration, the increased charge transport of graphene due to C60 deposition , and the strong electron-accepting characteristics of C60 causing a hole-doped nature in graphene, lead to hybrid structures allowing photogenerated carriers for high-performance photodetector devices . It is also noticed that a larger electron transfer in the Phos→Fullerene direction is responsible for lower bandgap values, resulting in a higher conductance. In this way, functionalized fullerenes with strong acceptor functional groups could be implemented to maximize the electron transfer and charge transport.