In terms of SID, the instrument has a total voltage limit of 300 V across all activating regions, including the cone voltage, SID/Trap, and Transfer regions. Thus, with an SID voltage of 190 V, the cone voltage could only be tuned up to ~100 V. Hence, the x-axis of Figure does not reach the same cone voltage as used in Figure . For SID of PhosB, monomer formation will be the favored dissociation pathway, if the SID energy is sufficiently high. Previous work in our lab found that the ratio of product monomer and surviving precursor dimer is about 50:50, even at the highest SID energies. Taking that into account, and factoring in the CIx results, we anticipated that increased isCA would not affect the SID trend since the only SID product is the monomer subunit. As seen in Figure , this is indeed the case. Regardless of the cone voltage, no significant changes occur in the SID trend. In striking comparison to the results obtained for SA, and CRP, this SID trend suggests no measurable structural rearrangement took place. Figure . A) 21+ PhosB isCA∆ -SIDC (3990 eV) ERMS plot with overlayed CIx plot. The implied y-axis of the overlay is drift time. B) Monomer average charge state. Increased levels of isCA do not have a statistically significant effect on SID pathways nor on the monomer's subsequent charge state. The inset depicts the PhosB dimer (PDB 1GPB).