Precursors 1 and 4 were synthesised using literature procedures . Films were deposited using a homebuilt crossflow ALD reactor at 50 hPa. A flow of N2 (99.999%) was used as the carrier and purging gas. At all times during the deposition, the N2 pressure was kept constant. Precursors 1 or 4 and water were used as the In and O sources, respectively. The precursors were introduced separately into the reactor via stainless steel gas lines, which were extended into the reactor tube to ensure maximum substrate exposure. Precursors 1 and 4 were placed in a stainless-steel bubbler, which was heated to 120 °C, the gas delivery line was heated to 140 °C and flow of precursor into the chamber was aided by N2 carrier gas. The deionized H2O was kept at room temperature and delivered into the chamber without a carrier gas. Film deposition was undertaken on approximately 2×3 cm Si (100) and glass substrates, which were cleaned by dry N2 gas and used without further chemical cleaning. After loading the substrates, the chamber was baked at 155 °C overnight. The deposition zone of the reactor was defined by the heated zone of the tube furnace. Unless otherwise noted, a typical ALD cycle consisted of a 4 s pulse of 1 or 4 and 3 s pulse of H2O, with 10s N2 purges after the In precursor and the water pulses. The deposition process was studied between 150 and 520 °C.