The bandgap of p-BCN calculated by using Heyd-Scuseria-Ernzerhof (HSE) hybrid functional within DFT is in the visible range. Because of that, it has great potential to be used in photocatalytic and optoelectronic devices . In addition, the buckled direct bandgap semiconductor is predicted to be an excellent optoelectronic material due to it's favorable surface for the photon-electron interaction . What is lacking here is a meticulous study on optoelectronic properties. For applicability, it is crucial to test the mechanical stability, and strength as well as manipulate the optoelectronic behavior. Understanding the importance, we performed DFT calculations to investigate, reveal, and engineer the peculiar structural, mechanical, and optoelectronic properties of the p-BCN monolayer and analyze the influence of strain.