These findings contradict the observations of Filintoglou et al., who compressed monolayer graphene samples grown by chemical vapor deposition (CVD) on copper substrates using both a polar (4:1 methanol/ethanol) and a non-polar (fluorinert) pressure-transmitting medium (PTM). They observed that in the 0-3 GPa pressure range, the pressure slope of the G band was consistent for both PTMs, suggesting that the mechanical stress primarily determines the response of the G-band frequency to pressure, rather than pressure doping from the PTM. In this kind of experiments, numerous microscopic effects might contribute to the observed phenomena, making their atomistic interpretation non-trivial and leading to controversies in the literature. BLG is subjected to both in-plane biaxial stress induced by the substrate (generally SiO 2 or copper) and outof-plane stress from the PTM, that increases the probability of chemical functionalization and interlayer bond formation. In the present work, we focus on the latter effect, to elucidate the interplay between interface reactivity and PTM pressure.