From these observations, we propose a two-step mechanism for the growth of 3C-SiC deposited via pulsed CVD. In the first step, i.e., during the Si-pulse, a layer of Si is deposited on the graphite surface. In the second step, i.e., during the C-pulse, the Si layer is carburized. Here, the carbon species react with the Si to form 3C-SiC. From Figure (a), the strong Si (111) peak at 2θ = 28.4°, seen for 3 s Si + 0 s C, disappears when a C-pulse is added, supporting the assumption that the C-pulse is a carburization step. In Figure (b), a weak Si (111) peak appears for 5 s Si + 3 s C, suggesting that with such a pulsed-CVD cycle there are not enough carbon species to carburize the previously grown Si layers.