Owing to the development of solid-state n-type DSCs (n-ssDSCs) and recent good progress on solid-state p-type DSCs (p-ssDSCs), the time is ripe to combine p-and n-type ssDSCs to realize the first p-n-type solid-state tandem device. Conventional designs of ssDSCs feature a metal back contact, meaning incident light is obstructed from one side of the photoelectrode stack. The incorporation of transparent counter electrodes in ssDSCs offer a dual benefit: it not only facilitates the penetration of incident light, a crucial aspect for various DSC applications like windows or agrivoltaics, but it also unlocks the potential for the fabrication of a tandem device. While semi-transparent n-ssDSCs have been demonstrated, a transparent back contact has not been realized in p-ssDSCs until now. Inspired from the work using indium doped tin oxide (ITO) as back contact in n-ssDSCs and the transparent conductive layer in tandem solar cells, we herein present the first realization of a p-n t-ssDSC that incorporates both p-ssDSC and n-ssDSC connected by a transparent ITO conductive layer in a series configuration. The resulting p-n t-ssDSC features semi-transparent and boosts an open-circuit voltage of 1.4 V, surpassing the theoretical voltage limitation of its liquid counterpart sharing one redox couple.