A scanning electron microscope (LEO 1550 Gemini) with 3 kV accelerating voltage and an inlens secondary electron detector was used to micrograph and measure the film thickness over accomplished by verifying the thickness through cross-section SEM measurements. The samples were broken into multiple pieces to perform cross sectional thickness measurements with 1 cm intervals. Three measurements (left edge, center, and right edge) were performed at each cross section. An energy dispersive x-ray detector with an atmospheric-thin-window in the same chamber was operated to obtain the elemental mapping and line-scan over the pillarhall structures. A 15 kV accelerating voltage was used for the EDX measurements. The elemental compositions of the samples deposited with and without Xe were measured using time-of-flight elastic recoil detection analysis (ToF-ERDA). The measurements were carried out with 36 MeV Iodine ( 127 I 8+ ) ions as projectile beam and with a ToF detector. The extracted ToF-ERDA histograms were converted to elemental concentration-profiles using the Potku code . Substrate curvatures were determined from rocking-curve measurements using a PANalytical EMPYREAN diffractometer with a Cu X-ray tube, operated at 45 kV and 40 mA.