Determination of the conduction band edge. We identify the potential of the conduction band edge with -1.2 V. This is inferred from the inflection point in EMAS at this potential (Fig. ) for the traces of the A-and B-exciton as well as the first reductive peak in the DPV scan at -1.18V (Fig. ). Utilizing points of inflection in EMAS for band edge localizations has been discussed before for CdSe quantum dots, and the relatively weak DPV signal at the conduction band edge can be understood in terms of the low DOS at the K point of the conduction band shown in previous theoretical calculations for monolayers. Our assignment of the conduction band edge is also supported by the differential capacitance which exhibits reducible states at around -1.2 V (Fig. ). The fusion of the formerly clearly resolved A-and B-exciton signals into a single broad band at -1.2 V (Fig. ) is further evidence for reaching the band edge as a result of enhanced coulomb scattering of the excitons with free charge carriers. Doping and bandgap renormalization. We note that the position of the OCP at -0.5 V, that is, only 0.7 V below the conduction band edge, indicates substantial n-doping of the nanosheets, which is supported by the immediate decrease of the steady-state conductivity upon oxidation (Figure ). We stress that bleaches of the A, B and C excitons are instantaneously formed in the reductive EMAS scans upon departing from the OCP (Figure ) even for potentials far below the conduction band edge. The bleaching below -1.2 V is therefore not caused by band filling but rather a sign of bandgap renormalization, previously observed in TA measurements , by chemical doping and by spectroelectrochemistry of 3-layer, 150 nm large 2H-MoS2 nanosheets produced by liquid based exfoliation. Briefly, upon electron injection into 2H-MoS2 nanosheets the self-energy of the electron and hole states decreases due to many-body effects, and this decrease is typically larger for the electron states. If the concomitant decrease in excitonic binding energy (due to increased charge screening) is smaller than this band gap renormalization, a net red shift in absorption results from increased n-doping. Likewise, a net blueshift is expected for lowering the Fermi level. We therefore attribute the blue-shifted induced absorptions near the A/B-excitonic transitions during oxidation in Figure to the same bandgap renormalization effect, given that it occurs immediately upon departing from the OCP.