AFM analysis. The film thickness of GO/TNC and (GO/rGO)/TNC films deposited on oxidized silicon wafers was determined via AFM analysis using a Digital Instruments microscope equipped with a Nanoscope IV Controller. ∼1×1 cm 2 sections of the substratesupported films were fixated on a metallic plate using sticky tape. The film was scratched several times using a cannula, and subsequently cleaned in a stream of nitrogen to remove residues caused by scratching. Height maps (20×5 µm 2 or 2.5 µm 2 ) were recorded at the edge of a scratched film and the underlying substrate at two different film positions using the tapping mode. The obtained data were analyzed using the software Gwyddion. Ten height profiles (5/scan) were extracted and averaged. SEM analysis. The film morphology before and after DUV exposure was analyzed via SEM analysis. GO/TNC films were deposited onto silicon wafers and exposed to DUV light for 7 h. The measurements were conducted using a Zeiss LEO 155 Gemini microscope (acceleration voltage: 30 kV).