While our current method enables 54 GFET inspection within 30 min, throughput can be further enhanced using advanced Raman microscopy techniques such as multiline-illumination Raman microscopy patterned into an of six rows and nine columns using a 300 × 300 μm 2 mask through oxygen plasma etching, creating 54 GFETs on each chip. Finally, the PMMA layer was dissolved in acetone. Each GFET had a channel length and width of 100 μm, numbered from #1 to #54 (Figure (a)).