The electrical and structural properties of the hybrid films were investigated as a function of the DUV exposure time, TNC type, and hybrid film thickness via charge transport measurements, SEM, and XPS analysis. GO/TNR and GO/TNP films of different thickness were deposited onto oxidized silicon wafers with IDEs by varying the number of applied LbL-SC cycles. The films were exposed to DUV radiation for up to 7 hours. Current-voltage (IV) curves were recorded after specific time intervals while keeping the samples under a nitrogen atmosphere. To this end, a constant flow of nitrogen was fed through the measurement cell using a commercial test gas system for at least 1 min until a stable baseline resistance was achieved. The applied voltage was swept between ±1 V and the resulting current was measured using a sourcemeter. All films exhibited ohmic IV characteristics. The conductance was extracted as the slope of the linear curves. Figure ) shows the evolution of the conductance for (GO/rGO)/TNP (blue) and (GO/rGO)/TNR films (orange) with increasing DUV exposure time. These films were prepared by applying only one LbL-SC cycle. For both types of films, an increase in conductance can be observed with the onset of DUV exposure, indicating the formation of rGO and the restoration of conductive sp 2 hybridized regions.