where x is the atomic concentration of X (X=Al, Ga) and E stands for total energy per formula unit (f.u.). Our estimated H mix are positive (shown in Table ), which indicates that non-equilibrium growth processes, such as sputtering, which is already used for doped wAlN materials, would be an ideal approach to fabricate these materials. Note that our H mix values are comparable with that of Sc doped w -AlN (~0.3 eV/f.u.) . Promisingly, B doped w -AlN has been synthesized by sputtering , where the B concentration was up to ~11%. Moreover, sputtering has been employed to grow good quality h-BN films with thickness from 50 to 120 nm . Therefore, we propose that sputtering can be used to grow doped h-BN.