3C-SiC coatings were deposited at ptotal= 1 kPa, T= 1000 -1200 ℃ via pulsed CVD using SiCl4, (99.998%, Sigma-Aldrich Chemie GmbH) and C2H4 (99.95%, Linde Gas AB) as precursors. In this precursor pulsed CVD process, the substrate was exposed to SiCl4 (100 sccm) and C2H4 (50 sccm) in alternating pulses with a H2-purge after each precursor exposure. Purified H2 with a constant flow rate of 3200 sccm was used both as a carrier gas for the precursors and as a purge gas. During the precursor pulse, H2 functioned as a carrier gas and entered the reactor together with the precursor. During the purge step, H2 was responsible for flushing out residual precursors and reaction byproducts. It should be noted that H2 also takes part in the chemical reactions in the SiC CVD process .The liquid SiCl4 was stored at 24 °C in a stainless-steel bubbler placed in a thermostat-controlled water bath, rendering a SiCl4 vapor pressure of 30.7 kPa. The flow of SiCl4 vapor from the bubbler was controlled by regulating the flow of H2 through the bubbler and the headspace pressure in the bubbler.