We also studied how the pre-annealing step affects the selectivity of ALD/MLD deposition on graphene. Annealing in an Ar/H2 atmosphere reduced the amount of PMMA residues and enhanced the selectivity for Eu-BDC deposition (see Figures , and Table ). Annealing in an O2 atmosphere increased the number of defects in the pristine graphene layer and promoted the growth of the Eu-organic film outside the TPO areas. For PVAc graphene, the result was the opposite. While ALD/MLD on the unannealed graphene surface resulted in a nucleation delay of at least ≈50 cycles, for annealed PVAc graphene samples in an Ar/H2 atmosphere, the selectivity dropped to 0.7 already after 25 cycles. This may be due to the decomposition of PVAc and the presence of amorphous carbon after annealing at 350 o C in an inert atmosphere. Thus, we argue that the interaction of precursor molecules with PVAc is much weaker compared to PMMA and amorphous carbon. The WF of pristine graphene was measured at 4.75±0.05 eV, while the TPO graphene areas exhibited higher WF values of 5.06 eV at 90 pJ 2 s and up to 5.27 eV for 625 pJ 2 s (Figure ), indicating significant p-type doping due to the binding of oxygen-containing groups to the graphene surface. The deposition of 50 ALD/MLD cycles of Eu-BDC at 250°C slightly reduced the WF by ≈35 meV in the 90 pJ 2 s area. For 160 pJ 2 s, it decreased further by ≈100 meV, reaching 4.96 eV. This reduction in WF after Eu-BDC deposition suggests n-type doping at higher fs-laser doses, driven by increased charge transfer between the Eu-BDC film and graphene. After the ALD/MLD process, the G and 2D bands in the Raman spectrum of pristine graphene show a blueshift, indicating p-type doping due to the enhanced interaction between graphene and the underlying SiO2 substrate, increased by annealing at 250°C during deposition in an inert atmosphere. In the TPO areas, the blueshift of the G and 2D bands diminishes as the fs-laser dose increases (Figures and). At 160 pJ 2 s, the 2D band shows a 2 cm -1 redshift, demonstrating that the charge transfer mechanism is more pronounced at higher fs-laser doses.