Alternatively, a QCM sensor (Allectra) equipped with a gold coated quartz crystal (AT-cut), was used as substrate for the deposition. The QCM sensor was positioned downstream of the plasma source (the same location as TiN substrate). To avoid unwanted precursor condensation on the QCM, 50 °C water was circulated in the cooling water system of the sensor, to heat the QCM. To maintain consistent surface conditions, the QCM crystals were replaced after each deposition experiment. A DC bias voltage ranging from -60 to +80 V was applied to the substrate holder or to the QCM sensor via an additional DC voltage supply. Two methods were employed for thin film deposition, a continuous process, where the precursor was continuously fed to the substrate while maintaining a plasma discharge, and a pulsed process, where the precursor and plasma were introduced in sequential pulses separated by argon purges. The durations of the precursor pulse, argon purge, and plasma pulse were varied to determine suitable conditions for saturation growth.