Here, we present an alternative ALD approach to deposit metastable high-Al content AlxTi1-xN based on tris-dimethylamido aluminum (TDMAA) and TDMAT precursors that were coevaporated into the reaction chamber in a single dose. This precursor choice was firstly motivated by the fact that more common AlxTi1-xN deposition processes rely on chlorine-based precursors such as TiCl₄ and AlCl₃, which not only require high temperatures but can also lead to Cl incorporation in the films. Secondly, our previous publication proved that alloying group 13-nitrides (by co-subliming gallium and indium precursors with identical ligands) leading to ternary phases enabled tuning properties of the resulting In1-xGaxN films. Thirdly, previous studies suggest that organoaluminum compounds with dimethylamino and methyl substitutions, such as TDMAA, are stable in TDMAT, allowing TDMAA and TDMAT to be mixed. Finally, mass spectrometry investigations have confirmed that TDMAA and TDMAT do not react with each other in the vapor phase. To the best of our knowledge, no ALD study of AlxTi1-xN grown with this precursor combination and process approach has been reported to date.