From these dilute cylinders, 500:1 mixtures of X:CH3ONO (where X= N2, Ar, Xe) are prepared manometrically. The room-temperature gaseous mixtures are deposited onto the cold substrate in the matrix-isolation chamber through an effusive source immediately forming amorphous matrices. The substrate is held at 10 K during deposition for mixtures containing N2 and Ar, and 30 K for mixtures containing Xe. Deposition rates are controlled by a dosing valve (VAT), and deposition times range from 1.5-6 hours. The angle of deposition, defined from the plane perpendicular to the cold substrate (denoted as α), varied from -10° to 20°. For reference, a gas deposited normal to the cold substrate would have an α angle of 0°, and any other angle would be considered an oblique angle deposition (OAD). The range of angles is restricted by the design of the aluminum heat shield attached to the first stage of the cryostat, thus limiting the range of deposition angles possible.