Gallium nitride (GaN) is a group 13-Nitride semiconductor of high importance to modern electronic devices due to its optical and electronic properties. GaN has a direct and wide bandgap of 3.4 eV, a high breakdown field of 5 MV cm -1 , high electron mobility (theoretical limit 3200 cm 2 /V×s), high electron saturation velocity (theoretical limit 3.15×10 7 cm/s), and high thermal stability (melting point of 2500 °C). These properties make GaN important for high power and high-frequency electronics and optoelectronics.