and the degree of microstrain, with mean values around 1.6% (SnSe2) to 3.0% (SnS2) , indicate a high level of defects. In this way, the increase in temperature drives a structural relaxation, which favors the superficial oxygen quimisorption, and consequently, the increasing of the electrical resistance due to to the capture of free electrons . As shown in the Fig. , increasing the temperature above 75 °C all the materials display a typical semiconducting behavior . Therefore, these results