SiC coatings were deposited in a horizontal hot-wall CVD reactor using silicon tetrachloride (SiCl4, 99.998%, Sigma-Aldrich Chemie GmbH) and ethylene (C2H4, 99.95%, Linde Gas AB) as precursors. Hydrogen chloride (HCl, 99.9995%, Linde Gas AB) was also utilized for the inhibition studies. During the deposition, hydrogen purified by Ag-Pd alloy membrane was used as a carrier gas. All the gas flows were regulated with electronic mass flow controllers (MFC). The liquid SiCl4 was placed in a stainless-steel bubbler with the temperature maintained at 24.2 °C by a thermostat bath, rendering a vapor pressure of 30.6 kPa. A controlled flow of hydrogen gas was bubbled trough the liquid SiCl4 with an electronic pressure controller (EPC) tuning the outlet gas pressure for a regulated flow of SiCl4. Polycrystalline graphite substrates (25 x 50 x 3 mm) with recessed trenches 0.3 mm wide and 1 mm deep, amounting to an aspect ratio (AR, defined as the ratio between the depth and the width of a trench) of 3.3, and with recessed steps 0.5 mm wide for each step and 1.5 mm in the total depth were used. All the experiments in this work were performed at a total pressure of 1 kPa (regulated by a throttle valve) with a pC2H4/pSiCl4 of 0.5 and a H2 carrier gas flow of 3.2 slm. In the temperature study, 3C-SiC coatings were grown with pSiCl4= 20 Pa at 900 ℃, 950 ℃ and 1000 ℃, as well as with The resulting coating thickness was measured from the cross-sectional images taken with scanning electron microscope (SEM, Zeiss LEO1550). The coating conformality in this work was assessed by the step coverage (SC) defined as the ratio between the growth rate at the bottom of the trench and that on the top surface. The structure and chemical phase of the as-deposited samples was characterized by the X-ray diffractometer (PANalytical X'Pert PRO Powder X-ray Diffractometer) operating at a voltage of 45 kV and a current of 40 mA. The PDF Ⓡ (Powder Diffraction File) cards for 3C-SiC (#00-029-129) and graphite (#00-056-0159) were used as references for diffraction peaks identification. process has been reported by Yang et. al. who showed that the surface reaction probability was proportional to the temperature when the partial pressure of the precursor Hf(BH4)4