Multicomponent precursors, such as methyltrichlorosilane (MTS, CH3SiCl3) and hexamethyldisilane (HMDS, Si2(CH3)6) , contain both C-and Si-atoms. Singlecomponent precursors, on the other hand, contain only C or Si and, thus, two singlecomponent reactants are required for deposition of SiC. The commonly utilized Si precursors are silane (SiH4) and silicon tetrachloride (SiCl4), whereas short-chain hydrocarbons, e.g. methane (CH4) , propane (C3H8) and ethylene (C2H4) , are often used as C precursors. Both types of precursors have been used successfully in the preparation of 3C-SiC coatings and epitaxial films via CVD .