A hot-wall Picosun R-200 Advanced ALD reactor, equipped with a Litmas remote inductively coupled plasma (ICP) source, was used for the depositions. The reactor operated at 4 mbar with a continuous flow of 400 sccm high purity N2 (99.999 %, further dried using a getter filter) into the chamber, which was also used as the purge gas. TDMAA and TDMAT from Sigma-Aldrich (99.999 %) with sublimation temperatures of 120 °C and 60 °C respectively, were used for developing the binaries AlN and TiN. To vary the stoichiometry in the films, the sublimation temperature was varied between 90 °C and 120 °C for the TDMAA + TDMAT mixture. The ALD of AlxTi1-xN was then carried out using the same optimized parameters as for the binary nitrides, with NH₃ plasma serving as the nitrogen source. The ALD process used a plasma discharge in a mixture of 75 sccm NH3 and 100 sccm Ar (99.999 %, further purified by a getter filter). The ICP plasma source was located approximately 75 cm above the substrate and ignited the plasma with a 2800 W plasma power. Prior to deposition, approximately 2 cm x 2 cm Si (100) substrates were cleaned with acetone and isopropanol for 10 minutes each to remove surface contaminants before blow-drying them with N2 gas. To avoid unwanted effects, the reactor was conditioned by long passivation runs of either N2 / NH3 plasma or thermal treatment in N2 flow for at least 24 hours while maintaining it at 4 mbar operating pressure and 200 °C on both substrate and wall temperature.