where Voc = 0.94 V, Jsc = 31.75 mA/cm², FF = 83.52%, and PCE = 24.97%. These results align with findings by Lee et al. , who reported that a thinner HTM improves charge extraction and reduces resistance, enhancing device performance. For the ETM, the thickness was varied between 0.01 μm and 0.1 μm. Figure illustrates that a thinner ETM leads to better performance metrics. A thinner ETM reduces the distance electrons must travel, thereby minimizing bulk recombination losses and increasing charge collection efficiency. The optimal ETM thickness was determined to be 0.02 μm, with Voc = 0.94 V, Jsc = 35.20 mA/cm², FF = 83.81%, and PCE = 27.87%. This observation is supported by Sobayel et al. , , who found that excessively thick ETM layers increase resistance and reduce the electric field, negatively impacting carrier transport. The optimal thickness for the absorber layer was identified as 0.315 μm, yielding Voc = 0.95 V, Jsc = 35.13 mA/cm², FF = 84.85%, and PCE = 28.41%. This represents a 14% improvement in efficiency compared to the initial cell. These findings are consistent with the study by Stranks et al. , who reported that an optimal absorber thickness balances light absorption with charge transport and minimizes recombination losses.