3C-SiC coatings with layered structures were deposited on isostatic graphite substrates via horizontal thermal CVD process at 10 kPa and 1100 ℃ using SiCl 4 (99.998%, Sigma-Aldrich Chemie GmbH) and various hydrocarbons. The highly <111>-oriented layers were grown with C 7 H 8 (99.8%, Sigma-Aldrich Chemie GmbH), whereas the other layers were grown with either CH 4 (99.9995%, AGA Gas AB) or C 2 H 4 (99.95%, Linde Gas AB). Liquid SiCl 4 and C 7 H 8 were stored in stainless-steel bubblers and placed in a thermostat-controlled water bath with its temperature being maintained at 23.8 ℃. At this temperature, the vapor pressure of SiCl 4 and C 7 H 8 were 30.1 kPa and 3.5 kPa, respectively. Purified hydrogen was used as a carrier gas which partially bubbled through the liquid precursors and carried their vapor into the CVD chamber. The flow rates of SiCl 4 and C 7 H 8 vapor were determined by electronic pressure controllers (EPC) at the outlet of the bubbler and by the inflow of hydrogen, which was regulated by a mass flow controller (MFC) at the inlet of the bubbler. In the preparation of the multilayered 3C-SiC, the SiCl 4 flow was continuous, while the hydrocarbon flow was switched between CH 4 or C 2 H 4 and C 7 H 8 . The deposition started with 10 minutes of SiCl 4 + CH 4 or C 2 H 4 and was followed by 10 minutes of SiCl 4 + C 7 H 8 . This 2-step cycle was repeated 3 times for each multilayer deposition, rendering a 3C-SiC coating with 6 layers. The 𝑝 ! ! /𝑝 "# in the gas phase was kept at 23 and the 𝑝 $ /𝑝 "# in the C 7 H 8 -, CH 4 -and C 2 H 4 -step were 1, 0.75 and 0.6, respectively, which were optimized in our previous work.