ure shows a schematic drawing of the experimental setup, similar as described in our previous study. The actuators were fabricated by stamping the membrane onto a silicon substrate featuring square cavities with edge lengths of ∼245 µm and a depth of ∼21.5 µm (cf. Figure , Supporting Information). The p-doped silicon substrate served as the bottom electrode while the membrane formed the top electrode. The freestanding section of the membrane and the bottom electrode were separated by the cavity while the remaining sections of the membrane covered a thermally grown silicon oxide layer. Further, the membrane was contacted by a gold electrode which was deposited onto the oxide layer. Before actuation, the membrane was exposed to DUV radiation for 120 min. After the DUV treatment, the thickness of the membrane was ∼10 nm. In order to actuate the membrane, rectangular voltage signals were applied, ranging from -40 V to +40 V. At the same time, the resulting deflection of the membrane was measured with an AFM tip operated in intermittent contact mode. When applying the voltage signal the membrane was deflected toward the bottom electrode, independent of the bias polarity (Figure ). Further, the deflection increased with increasing absolute voltage. Due to the membrane's elastic behavior the deflection was fully reversible. At each given voltage the deflection value was measured at the centre of the membrane, reaching up to ∼1.7 µm at ±40 V . As expected, less pronounced deflections were measured when positioning the AFM tip closer to the edge of the freestanding membrane. As a reference measurement, the AFM tip was placed on a substrate-supported section of the membrane. This experiment did not indicate any discernible response of the AFM tip to the applied voltage (cf. Figure ).