Table shows the process conditions of various recipes that was tried for the growth. Recipe 2 (R2) involves and etch back using HCl only (flow = 300 sccm) for 21 sec. The process itself is a CVD process consisting of DCS (Silicon source), Phosphine (P source) and HCl (etchant). The HCl is key to improving the selectivity and thereby a key knob to toggle crystallinity. For wafers that go to ASTEM/TEM, we do the decoration coating of TiN and Oxide. The Doping characterization is done on blankets for the corresponding recipe using high resolution X-ray diffraction (HRXRD). The Epi height and the incoming CD (at the base of epi growth) is measured on STEM images.