The fabrication of any electronic device requires the deposition of the material as a thin film. GaN thin films are typically deposited by chemical vapor deposition (CVD) at 800-1000 °C using trimethylgallium, Ga(CH3)3 (TMG), and ammonia, NH3, as precursors. The high deposition temperatures and poor conformity of the established CVD processes for GaN are problematic for any device structure not compatible with high temperatures or that require uniform film thickness over topographically complex geometries. The deposition method of choice for such structures is atomic layer deposition (ALD). ALD processes for GaN have been developed, mainly using TMG as Ga precursor and N2/H2 or NH3 plasma as N precursors. A problem with most reported ALD process for GaN is a high amount of carbon contamination, on the order of several atomic percent. The carbon emanates from the TMG precursor, most likely due to insufficient removal of methyl groups from the surface due to the lower temperatures in ALD, 200-400 °C, compared to CVD. One route to circumvent this problem is to use Ga precursors with Ga-N bonds instead of Ga-C bonds, such as Ga(N(CH3)2)3 which has been shown as a promising alternative for ALD of GaN. Another route is to slightly modify the TMG molecule to allow for easier removal of the alkyl ligands. In contrast to TMG, triethylgallium, Ga(C2H5)3 (TEG), can undergo β-hydrogen elimination, a well-known, low-energy path for alkyl ligand removal. While ALD of GaN using TEG as Ga precursor has been reported, the ligand abstraction enabled by the C-C bonds in the ligands has not been fully explored.