Block copolymer (BCP) directed self-assembly (DSA) has emerged as a tunable methodology for reaching previously inaccessible feature sizes by conventional lithographic techniques. DSA leverages BCP microphase separation and generates polymer pre-patterns with feature sizes equal to that of the domain spacing of the BCPs. In DSA of a lamellae-forming BCP with pattern density multiplication, a modified substrate with preferential affinity for one block of the BCP is lithographically patterned to generate guiding stripes with spacing 𝐿 ! that is an integer multiple of the natural pitch of the BCP, 𝐿 " , such that 𝐿 ! = 𝑥𝐿 " with 2 ≤ 𝑥 ≤ 5. The background regions between the guiding stripes are then modified to have a non-preferential chemical affinity with a composition tuned to minimize the average interfacial energy of the non-guided blocks in the BCP resulting in alternating stripes of preferential and non-preferential wetting affinities. Substrates with a preferential affinity to one block have been prepared with SAMs, 2 crosslinkable polymer mats, and end-grafted polymer brushes, while the non-preferential area is typically generated by backfilling with chemically tuned end-grafted polymer brushes. The most widely studied BCP for DSA is polystyrene-block-poly(methyl methacrylate) (PS-b-PMMA), for which chemical guiding patterns have typically been made with cross-linkable PS mats alternating with grafted PS-r-PMMA brushes. However, the resolution of PS-b-PMMA patterns is limited to 𝐿 " ≥ 22 nm due to its low Flory-Huggins interaction parameter (𝜒). As lithographically relevant dimensions continue to shrink below 10 nm, DSA needs to evolve beyond PS-b-PMMA with BCPs that have higher c parameters. This new landscape brings challenges not only in developing new BCPs, but also in developing novel strategies for scalable guiding patterns at smaller dimensions and with chemistries that match or adapt to the composition of the new, higher-𝜒 BCPs, all with an increased processed window to rectify or heal defects from imperfect guiding patterns. Prior work on PS-b-PMMA has demonstrated a strategy, referred to as self-registered self-assembly (SRSA), to locally alter the surface composition of the chemical pattern by loading the BCP film with end-functionalized homopolymer brushes, or "inks", which can diffuse and graft to the substrate during the annealing of the BCP film and register the domains of both copolymer blocks. The resulting 1:1 chemical guiding pattern can therefore guide both domains of the BCP and results in polymer pre-patterns with fewer defects than traditional DSA that relies on density multiplication. SRSA has been shown to increase the process window of DSA by assembling polymer pre-patterns with low defectivity on top of guiding patterns with non-ideal dimensions for density multiplication as well with over-etched guiding patterns due to imperfect trim etch. Another strategy, known as molecular transfer printing (MTP), has been developed to generate 1:1 chemical guiding patterns wherein homopolymer inks are loaded into PS-b-PMMA films, and the self-assembled structure is transferred to a daughter substrate through direct contact with a pristine Si substrate and subsequent annealing. Analogous to SRSA, in MTP the end-functionalized homopolymer inks diffuse through the BCP film and graft to the pristine daughter substrate and generate a 1:1 chemical pattern. Patterns assembled on the daughter substrates have improved structural properties, quantified by domain width distributions, compared to the patterns assembled on the original substrates. While these studies have been limited to replicating PS-b-PMMA patterns, the 1:1 chemical guiding patterns can be used to assemble films of differing chemistries as long as the BCP pitches and surface energies match. Both SRSA and MTP demonstrate how adding homopolymer inks into BCP films can heal defects present within imperfect guiding patterns. To be successful, the molecular weight of the added homopolymers must be small enough to segregate into each domain of the phase-separated BCP. As the pattern features shrink to below 10 nm, EUV-relevant dimensions , the overall molecular weight of the BCP must also decrease, therefore limiting the feasibility of using homopolymer inks to heal pattern defects.