Charge Transport Measurements. GO/TNC films were deposited on oxidized Si wafers equipped with IDE structures and exposed to DUV light for varying times. The samples were placed in a custom-built PTFE test cell (volume ∼20 mL) and purged with nitrogen (Linde 5.0) for at least ∼1 min to remove adsorbed water molecules. The samples were contacted using spring-loaded pin connectors. Current-voltage curves were measured using a Keithley 2601A sourcemeter or an Agilent 4165C semiconductor parameter analyzer.