Finally, we demonstrate the possibility of nanoscale writing using this method. Figure ), with w taken as the width of the deposit higher than 1 nm. This maximum lateral charging distance is found to be constant at ~55 nm, which agrees with the absence of deposition at a lift height of 60 nm and highlights the applicability of the mechanism for the 3D system. The shape of the lines changes as a function of the lift height however, as illustrated by the FWHM in Figure . In fact, the aspect ratio of the line can be modulated further by varying the number of pulses (SI-6). It should be noted that in this case significant charging up to ~800 nm from the probe is expected from Equation (using D = 7*10 -11 ) due to the high applied potential and consequently low value of α. Charging therefore appears to be slowed down significantly at these potentials.