Thin films of r-BxC were deposited on 4H-SiC substrates in a hot-wall horizontal CVD reactor from pyrolysis of 0.7 SCCM triethylboron (TEB, B(CH2CH3)3, 99.99 %, SAFC HiTech) in 5700 SCCM hydrogen gas (H2, Palladium membrane purified) for 180 min. The process pressure was regulated to 7000 Pa by a throttle valve and the deposition temperature of 1100 -1500 °C, monitored by a pyrometer (Heitronics KT81R, calibrated by silicon melting). The influence of the residence time was studied by either changing the total flow or by utilizing the position of the substrates in the SiC-coated elliptical graphite susceptor.