In summary, we present an e-CVD process for deposition of Cu films using copper (II) betadiketonates. While the process renders films that are contaminated with carbon and oxygen, and fluorine when Cu(hfac)2 is used, the process shows a self-limiting behaviour from QCM measurements. This suggests that the process can be described as an e-ALD process. Studies of the plasma species suggests significant redeposition of precursor fragments from plasma volume reactions with precursors desorbing from the chamber walls during the plasma pulse. This is likely the source of the film contamination.