The crystal structure of 35±3 nm thick films deposited at 320 °C is found to be consistent with polycrystalline hexagonal GaN GIXRD (ICDD reference code: 01-073-7289) (Fig. ). It can be noted that the B-pulse does not seem to affect the crystallinity of the films. For the ABC-type approach presented in this manuscript, the film density was found to be 5.4 g/cm 3 (no B-pulse), 5.0 g/cm 3 (Ar-plasma as B-pulse), 4.9 g/cm 3 (H2-gas as B-pulse), and 5.6 g/cm 3 (H2-plasma as B-pulse) which should be compared to 6.15 g/cm for bulk GaN. Thus, the B-pulse has a slight effect the film density. Figure shows the high-resolution XPS scans of the Ga 3d and N 1s spectral regions of GaN with 40-51 nm thick films deposited at 320 °C with different B-pulses.