We have adopted two approaches to introduce oxygen vacancies into LaNiO3, one is by lower the oxygen partial pressure to 6 Pa during sample preparation by PLD. And the other was to anneal the LaNiO3 thin film in a tube furnace at 350 °C for 2 h in flowing forming gas (5% H2 and 95% Ar) with an volume flow of 300 mL/min STP.