As RSA simulations proved to be a simple and yet insightful tool, several extensions to expand their use cases are available. These expansions include diffusion events in the form of lattice point hopping and the combination of adsorption and reaction events . As an attempt to judge the precursor penetration of an inhibitor layer, Kim et. al. combined an RSA algorithm for the formation of an SMI inhibitor layer with a second RSA algorithm for the precursor adsorption on the inhibited surface. In contrast to RSA simulations, MC simulations going beyond the early steps within an AS-ALD process are rarely present within the literature. A recent example is the MC approach developed by Carroll et. al. This ansatz focuses on material growth or, more precisely, the analysis of lateral overgrowth in AS-ALD processes. As a side feature, information on material stoichiometry and growth per cycle are also obtained. This algorithm uses a 3D lattice to describe multiple adjacent surfaces. All central atoms of the precursor or co-reactant (Al and O for Al2O3 ALD), as well as all ligands (i.e. CH3 or OH), can occupy a single lattice point on this grid. Material deposition is modeled by random selection of reaction sites (lattice points), while individual reactions are accepted based on predefined rules. As for RSA, reactions are assumed to be irreversible, and diffusion events are neglected. Still, this approach is significantly more complex since the user can add additional constraints to fine-tune the (lateral) growth. These constraints are considered based on encoded rules for adsorbate-adsorbate interactions influencing packing, orientation, and multi-site bonding of adsorbates. In addition, rules for adsorbate-surface interactions (attractive or repulsive) influencing the adsorbate position and orientation or even enabling additional reactions at the GS-NGS interface are present.