Infrared (IR) light detection plays a vital role in optical communication, night vision, remote sensing, and spectral analysis. State-of-the-art commercially available IR detectors typically employ epitaxially grown InGaAs or HgCdTe, which are expensive in production and elaborate in read-out electronics integration. Alternative emerging concepts exploit IR sensitive colloidal quantum dots (QDs), produced by facile, inexpensive and scalable solution synthesis methods, and are easily integrated into photoconductive QD-based devices. Nevertheless, these QD-based photoconductors suffer from large film resistivities, and require high bias voltages with large detector width-to-length ratios due to hindered charge transport characteristics. These challenges can be mitigated by utilizing a hybrid QD/graphene field-effect transistor (FET) structure. The current mechanistic understanding of these QD/graphene FETs invokes a band alignment between graphene and the QD thin film with a Schottky-like potential barrier. Under illumination, photons are absorbed in the QD-layer, generating electron-hole pairs, and-due to the built-in electric field-one carrier type is accumulated in the QD thin film, while the other is transferred to the graphene channel altering the conductivity of this lowresistance graphene layer. The trapping of one carrier type generates photoconductive gain, leading to increased responsivity values, according to the equation: 𝐺 = 𝜏 𝑡𝑟 𝜏 𝑡𝑟𝑎𝑛𝑠𝑖𝑡 , with 𝜏 𝑡𝑟 being the lifetime of trapped charge carriers in the QD thin film, and 𝜏 𝑡𝑟𝑎𝑛𝑠𝑖𝑡 the drift time of charge carriers in the graphene FET. This allows realizing small hybrid detectors with a footprint of just a few μm , a width-to-length ratio reduced to unity, and an operation drain voltage below one volt. In the case of QD/graphene FETs, various QD materials have been investigated differing in the spectral sensitivity such as ZnO for UV detection, perovskites and CdSe for visible light detection, and PbS in the near-IR (NIR, 0.7-1.4 µm) and entering the short-wavelength IR (SWIR, 1.4-3 µm) range. The spectral photoresponse will likely be further pushed into mid-wavelength IR (MWIR, 3-8 µm), employing narrow bandgap semiconductor QDs such as HgTe.