In this work, we have developed an efficient model reduction scheme for polymer semiconductors which can be utilized to compute intra-chain charge-carrier mobility in a computationally inexpensive way. The model captures the main chemical details, and it can be used to compare rapidly different polymers or to perform virtual screenings. We have illustrated the procedure by examining the chemical structure-charge mobility relationship in 28 realistic polymers. The strong correlation between localization length of the states at the valence band edge and hole mobility has been verified quantitatively, providing a firmer ground on the many observations in literature that have been derived solely on the basis of localization length. The data set helps establishing plausible ranges for all the microscopic parameters of the model and it can therefore be used to determine whether mobility can be further optimized. We observe for example that the current optimal polymers can be further improved to achieve a 5-fold increase in mobility by reducing the torsional static disorder to the smaller value observed in the data set. Possible strategies to achieve this is by incorporating more planar and fused aromatic moieties and promoting non-covalent locks between successive monomer units.