Similar to Al2O3, this phenomenon for EG will reduce the number of OH sites on the surface and this should make the growth TiCl4-EG films less favourable. However, despite the reduction of OH groups on the surface, terminal oxygen sites of the flat EG can also serve as active sites and they can bind with other TiCl4 molecules in the following cycle, similar to TMA-EG alucones. The GL molecule is a triol with three OH active groups, so even in the case of double reactions for GL the third OH group is available for further reactions. in Si(100) wafers. . We note the relatively low temperature of the titanicone deposition in refs. which may prevent the double reaction with EG. Si wafers and 2.2 Å/cycle at 150 °C deposited again in Si wafers in another study . The distance between the surface and the available OH group of the flat GL is 4.2 Å and this distance close to the measured growth per cycle of TiCl3-GL films in experimental work. Although the lower growth per cycle of TiCl3-GL films achieved in these experimental studies are most consistent with a flat lying orientation of GL when deposited in Si surfaces, DFT shows that the desired upright orientation of GL could be energetically favourable on a rutile TiO2 surface and this provides motivation to develop a lower temperature rutile TiO2/TiCl4-GL process where higher growth per cycle could be achieved. We note that the experimental data are not immediately comparable since different deposition temperatures are used, with significantly higher temperatures for the GL process compared to the EG process which may favour the flat-lying configuration.