The structural properties of the deposited GaN films were first analyzed by grazing incidence X-ray diffraction (GIXRD). Parallel beam X-Ray mirror for Cu radiation was used as an incident beam optics while parallel plate collimator 0.27º was used as the diffracted beam optics. The incoming beam angle, ω, was 0.5º. Data were obtained within the 2θ range of 20-90º, which were performed using 0.05º step size and 5 s step time.