In order to gain further insights into the dose-dependent strain and doping in graphene, we compared the effects of e-beam chemistry on CVD-grown graphene with mechanically exfoliated graphene, produced by the well-known "scotch-tape" method on Si substrates with the same oxide thickness as our CVD graphene samples. We conducted a series of electron dosage experiments (1343 -79000 µC/cm 2 ) on exfoliated monolayer graphene flakes and plot the resulting G and 2D peak frequencies as a function of dose on the 𝜀-𝑛 plot in Fig. . The dose-dependence of the frequencies and widths of the D, G, 2D and D' peaks are included in the Supplementary Information (Fig. ). There are a few notable differences between the exfoliated graphene data plotted in Fig. and CVD graphene (Fig. ) -on the whole the exfoliated graphene data were shifted towards higher (lower) G (2D) peak frequencies, suggesting lesser compressive strain and higher hole concentrations. The data also exhibited a similar inflection point where the graphene underwent tensile strain up to a threshold electron dose, and hole doping at higher doses. However, the biggest difference between the exfoliated and CVD graphene data is that the threshold dose value, i.e. the inflection point in the dosedependence, was an order of magnitude higher (~50000 µC/cm 2 ) in the exfoliated graphene.