The electrical output performance of the Mn3O4 membrane-based FNG device was further studied via electrical conductance, resistance, capacitance and quality factor at room temperature operation with varied frequencies. The frequency was varied from 1 kHz to 1 MHz on the FNG device for real time application studies. In Figure we see the resistance and conductance (1.58 nS) plots with variation of frequency with the values saturating from 100 Hz till 1 MHz. The capacitance (Cp) at zero bias voltage plays a major role for charge accumulation layer of the device and with it dielectric constant of the device was also plotted in Figure . The resonant frequency range of the fabricated FNG device shows that the capacitance dropped from 3.95 nF to 2.83 nF till 50 kHz and remained constant thereafter (∼2.7 nF). The drop in resonant frequency influences the conductance of the device to decrease upto a certain level (1.58 nS) as the resistance is higher at increased frequencies (skin effect) as seen in Figure . The dissipation factor (Q) influenced under Cp and self-heating under resonant frequency conditions changed from 142 to 96.8 in the 1 kHz to 1 MHz frequency range, respectively. The lower dissipation factor of the FNG system makes it a more efficient device for electrical applications.