New class of semiconducting materials are formed with the different variations of BxCyNz by combining h-BN and graphene structures either in-plane or out-of-plane, of which both the forms are thermodynamically stable . The in-plane form occurs when boron, carbon, and nitride atoms encounter each other inside the x-y plane and results in the formation of fewlayered materials. The out-of-plane form is revealed at the interface of graphene-boron nitride heterostructures i.e., where C vertically meets a single sheet of h-BN and results in the stacking of graphene-boron nitride. Experimentally, the phase segregation is often observable, which mostly leads to the distinguishable domains of C and h-BN. This demands the well-controlled synthesis conditions to achieve the homogeneous distribution of B, C, and N inside a layer, and thus the formation of BCN depends on the stoichiometry along with the arrangement of B, C, and N atom.