The e-CVD has been demonstrated with iron, cobalt and nickel, but not yet for copper. In this study we explore e-CVD of copper using the beta-diketonate precursors Cu(hfac)2 and Cu(acac)2. Previous e-CVD studies indicate that alternating the supply of the metal precursor and plasma electrons tends to yield higher-quality films. By experimenting with pulse and purge times while studying the deposition in situ by a quartz crystal microbalance (QCM) sensor, we find conditions where the deposition chemistry seems to be self-limiting. We thus propose that we have demonstrated e-ALD of copper.