Recently, it has been suggested that piezoelectric materials that exhibit the same sign for transverse expansion, with coefficient d 31 and d 32 , representing a horizontal expansion/contraction of the material in response to an applied electric field along the c-direction and longitudinal coefficient d 33 , which represents vertical expansion/contraction of the material due to an external electric field along the c-direction can show an electric auxetic effect . In such materials, negative (positive) d 31 , d 32 , and d 33 result in a contraction (expansion) in all dimensions in response to an applied electric field. Allowing structural deformations using electric fields, the piezoelectric auxetic effect can enable the development of highly sensitive sensors and transducers for applications such as pressure sensors, accelerometers, and strain gauges. This effect can also be harnessed to create smart actuators and nano-systems. The combination of the piezoelectric response and the auxetic effect allows for precise control and manipulation of mechanical strain, enabling the development of advanced microactuators, microfluidic devices, and nano-electromechanical systems . These systems find applications in fields such as robotics, biomedical devices, and precision engineering. Note that most existing piezoelectrics do not show this effect. For example, w -AlN has positive d 33 but negative d 31 (-2.17 pC/N). However, the FE orhtorhombic phase of HfO 2 shows an electric auxetic effect, where d 31 (-1.25 pm/V), d 32 (-1.84 pm/V), and d 33 (-2.59 pm/V) have a negative sign . Table To this end, it is interesting to know if the protruded polar phase remains stable down to few layer thickness as typically there is a critical thickness for ferroelectricity in perovskites due to the depolarization field. Our DFT optimized structures show that freestanding doped h-BN Figure . The energy barrier obtained from SSNEB calculations for FE polarization switching in doped h-BN trilayer -where Al/Ga atom passes through the h-BN layer. We consider flat phase as a paraelectric reference and also notice that the flat phase is higher in energy compared to polar protruded phase.