The dimethylamido ligand has been extensively used for ALD of titanium nitride (TiN) in the tetrakis(dimethylamido)titanium(IV) (Ti(NMe2)4, TDMAT) precursor. TiN is a commonly employed diffusion barrier material known for its hardness, refractory properties, and boasts a bulk resistivity of 20 µΩcm. The decomposition and reaction mechanisms of TDMAT have been extensively studied. Another study on gas phase decomposition and reactions of different tris(dimethylamido) precursors, utilizing Fourier transform infrared spectroscopy and molecular beam mass spectrometry found that gas-phase decomposition of tris(dimethylamido)stibine (TDMASb) leads to the production of several stable products including methylmethyleneimine (MMI), dimethylamine (DMA), and methane (CH4). These species are analogous to the pyrolysis of tris(dimethylamido)arsine (TDMAAs) and tris(dimethylamido)phosphine (TDMAP). Therefore, one could hypothesize that TDMAA could have a similar gas phase chemistry to these precursors.