In devices based on InAs, holes cannot be utilized because of Fermi level pinning in the conduction band at the surface. As a result, transport is based only on electrons. Therefore, of the two materials considered here, only ZnTe could serve as an effective tunnel barrier in InAs-based Majorana devices. We had previously postulated that in Majorana experiments a barrier thick enough to completely insulate the semiconductor from the superconductor might also nearly eliminate transport. We assume that the relevant regime for tuning the coupling at the interface would be in the thickness range where some MIGS are still present. In the case of a CdSe barrier, this may function as a spacer layer while allowing some current flow. Establishing a connection between parameters of the interface (such as the band alignment and presence MIGS) and proximity-induced superconductivity or other physical factors that affect the emergence of MZMs would require careful experimentation.