To evaluate the dependence of charge transport property of films on different aggregate structures, we then fabricate bottom-gate/top-contact PII-2T organic field-effect transistors (OFETs) with source-drain (S-D) channels perpendicular (φ = 90º) and parallel (φ = 0º) to the film coating direction (Figure ). AFM height images indicate films coated from 3 solutions have similar thicknesses of ~90 nm (Figure ). Details about device fabrication and characterization process are summarized in the Supporting Information. The representative drain-source current (IDS) -gate-source voltage (VGS) transfer curves and corresponding IDS-VDS output characteristics of the devices are shown in Figure , measured with S-D channel parallel to the coating direction. The nearly ideal transfer curves allow us to reliably extract hole mobilities (µFET) to quantify carrier transport in the saturation regime. Figure summarizes the µFET and its anisotropy measured from OFET devices coated from three solutions. The OFETs printed from CN solution exhibit the highest hole mobility among the three solvents, averaging 1.56 ± 0.14 cm 2 V -1 s -1 at φ = 0º, and 0.30 ± 0.02 cm 2 V -1 s -1 at φ = 90º. We attribute the highest hole mobility and the largest charge transport anisotropy obtained from CN film to its lowest paracrystalline disorder and highest degree of in-plane alignment.