Lee et al., 2015, studied Fano resonance and photoluminescence enhancement in monolayer MoS2 "integrated with plasmonic nanoantenna array". The researchers, "by integrating chemically grown monolayers of MoS2 with a silver-bowtie nanoantenna array" obtained "a unique two-dimensional optical system". The physical device contains "MoS2 excitons interacting with the plasmonic resonances of the bowtie array", so that, at low temperatures, the exciton-plasmon coupling results "in a Fano line shape in the reflection spectrum". The Fano line shape "can be tuned by altering the coupling strengths" . About Raman spectra, see please the Figure in the mentioned reference. There, we can find a SEM image giving the "silver bowtie array directly patterned on welldefined, stacked triangular flakes of mono-and bilayer MoS2". In Fig. ) the Raman spectra of MoS2, bowtie array, and the bowtie-MoS2 system are given. The peaks seem being asymmetric. However, it is in Tanwar et al., 2022, that we can find the "Fano-type wavelength-dependent asymmetric Raman line shapes from MoS2 nanoflakes". This publication is licensed under CC-BY-NC-ND 4.0. "Excitation wavelengthdependent Raman spectroscopy has been carried out to study electron-phonon interaction (Fano resonance) in multilayered bulk 2H-MoS2 nano-flakes. The electron-phonon coupling is proposed to be caused due to interaction between energy of an excitonic quasi-electronic continuum and the discrete one phonon, first-order Raman modes of MoS2. … Typical wavelength-dependent Raman line shape has been observed, which validates and quantifies the Fano interaction present in the samples" . And also: "The experimentally obtained Raman scattering data show very good agreement with the theoretical Fano-Raman line-shape functions and help in estimating the coupling strength". The researchers tell that "In bulk materials, Fano resonance takes place due to matching of energy of the electronic continuum provided by free carriers via either heavy doping or photoexcited carriers, with the discrete one-phonon energy, causing a constructive and destructive interference" (Tanwar et al., and references therein). The result of the Fano resonance is an asymmetry of the Raman line shape and a shift of the peak. "Another prominent feature of these Raman profiles depicting Fano resonance is the presence of antiresonance (dip) on either the pre-maximum or post-maximum side depending on the type of carrier (electron or hole) involved in generating the electronic continuum" which is .