Further evidence for self-brushing of the BCP on both Si and 28PS substrates is provided in the Supporting Information where X-ray photoelectron spectroscopy shows evidence of the BCP on both F1 and M1 films (Figure ). Next, we demonstrate how using microphase-separating BCP inks enables the self-healing of defects in BCP DSA. We follow a similar procedure as with the unguided substrates and use subsequent rounds of BCP film application to induce grafting of the BCP ink to chemical guiding patterns. Figure shows the two nanofabrication workflows for self-healing DSA: the nonpreferential background (Figure ) and the Si (with native oxide) background substrates (Figure ) workflow that mimic the non-patterned substrates used previously but contain PS- "all brush" chemical patterns. Briefly, a Si substrate is modified with a PS-OH brush and covered by a layer of e-beam resist followed by electron beam lithography to generate patterns with periodic lines spaced 3𝐿 " = 58 nm apart for 3´ density multiplication. A dry etch of O2/He plasma clears off the exposed PS-OH brush followed by removal of the remaining e-beam resist via solvent stripping to generate the PS-OH chemical contrast patterns. For the non-preferential background brush workflow shown in Figure , the chemical patterns are backfilled with the 28PS non-preferential brush resulting in patterns of alternating domains of 28PS brush and majority PS-OH brush, which serve as the guiding stripes. Previous work has shown that the while the 28PS brush interpenetrates the PS-OH brush and grafts to the substrate, if a secondary brush is chosen to have a lower molecular weight than the PS-OH original brush, the final brush layer retains wetting affinity for PS. A thin, 𝑡 = 1.25𝐿 " = 25 nm film of BCP is applied to the nonpreferential background patterns and annealed at 250 °C to enable self-brushing and grafting of the BCP to the substrate. The thin BCP film is stripped in N-methylpyrrolidnone (NMP) and annealed to remove residual solvent, revealing a nanostructured monolayer of BCP on top of the chemical pattern. Next, a second BCP film with the same thickness as the first film is deposited and annealed to generate a DSA film absent of noticeable defects. In the self-brush workflow shown in Figure , the first BCP film is applied directly to the PS-OH chemical pattern and annealed at 250 °C to induce self-brushing. The subsequent processing steps match that of the non-preferential brush workflow.