We have imaged the electrochemically excited-state absorption of ethanedithiol-crosslinked PbS quantum dot films with excitonic transitions between 1470 nm and 1730 nm. Electron and hole injection was successfully achieved, the absolute positions of the conduction and valence band were determined, and the band gap was illustrated. These results are enabled by the combination of potential-modulated absorption spectroscopy with working electrodes made from hydrogendoped indium oxide. With this combination, we achieve a noise level for the differential absorption of 0.1 mOD between 1300 nm and 1750 nm, which provides the required sensitivity for monitoring the often incomplete and irreversible electrochemical excitation of quantum dots. Increasing the thickness of the doped indium oxide enables a similar sensitivity up to 2000 nm, rendering the technique presented here a powerful tool for elucidating the density of states in the vicinity of the band gap of IR-active quantum dot materials.