after the Ti(DMA)4 pulse Ti(DMA)4 is another Ti precursor that has been used for the deposition of TiO2 and TiN ALD films and titanicone MLD films , as the corrosive nature of the HCl by-product released during the reactions with TiCl4 is considered a drawback. Ti(DMA)4 is a metalorganic precursor containing Ti-N bonds to the organic ligands, dimethylamino DMA (N(CH3)2), and with a much larger molecular size when compared to TiCl4. It offers some advantages as a precursor, including the noncorrosive nature of by-products of ligand elimination, higher reactivity due to the weak Me-N bonds and good thermal stability. We perform DFT calculations to study the feasibility of the growth of titanicone films using Ti(DMA)4 and EG or GL as MLD precursors and to investigate the molecular mechanism behind the possible growth. The hydroxylated anatase TiO2 surface, hydroxylated rutile TiO2 surface and hydroxylated Al2O3 surface were selected as surface models.