Additionally, the chemical interaction between the graphene and Eu-BDC film weakened due to the reduced number of oxygen-containing defects on the surface. Thus, even if defects are generated in graphene upon UDLW, the intrinsic properties of the layer can be restored during ALD/MLD at 250°C when small to moderate fs-laser irradiation doses are used. At higher laser pulse energies (>25 pJ), it becomes harder to control the defect density, which can result in an increase of nD after the ALD/MLD process (Figure ).