We conclude that intrinsic point defects in the bulk absorber layer do not limit performance in t-Se solar cells, through impacts on doping or recombination, bestowing a positive outlook on the achievable photovoltaic efficiencies. In light of these results, we propose that extended defects, grain boundaries and/or interfaces are the likely origins of V oc deficits and limited efficiencies in Se PV devices, as supported by recent experiments. CRediT Author contributions