The epitaxial ZrB2(0001) films applied as templates in the growth of the BN films were deposited on three 4H-SiC(0001) substrates by DCMS of a ZrB2 compound target of 99.5 % purity (excluding Hf) from Kurt J. Lesker Company Ltd that are henceforth referred to as Sample 1, 2, and 3. The sputter process was carried out in an ultra-high vacuum system at a base pressure below 1.6 x 10 -6 Pa in an argon (99.9997 %) plasma held at 0.53 Pa, using a magnetron power of 400 W to the circular target with a diameter of 3 inch, and at a substrate temperature of 900 °C.