T= 320 °C. In an early study, Larsen & Stringfellow reported that TMI decomposes at T= 340 -433 °C in N2 carrier. Later on, in situ Raman spectroscopy measurements carried out by Hwang et al. determined a larger temperature interval, with T= 120 -535 °C, thus hinting the thermal instability of this precursor during the InN deposition in N2, where the best crystallinity was found at T = 320 °C. In Table , the calculated equilibrium constant for MI formation, disregarding the pathway to achieve this point, is 6.00 x10 +3 at T= 535 °C. In particular, the forward rate constant kfwd of 1.57 x10 -4 s -1 indicates that the first dissociation is benefited by the increase in temperature.