In this work, we seek to extend the concepts developed by Abelson and Girolami, which focused primarily in exploiting low pressure and low temperature for coating electronic chip architectures, to a hard coating CVD environment with temperatures of 900 -1100 °C and a total pressure of 1 kPa pressure. Hard coatings present a different challenge for conformal deposition as film thicknesses and substrate features are typically on the micrometer scale, rather than the nanometer scale as in films for electronics applications. We explore conformal CVD of silicon carbide (SiC) both by adjusting precursor partial pressures and by adding inhibitor molecules. By these approaches we demonstrate micrometer thick, conformal and superconformal deposition of cubic SiC, also known as β-SiC or 3C-SiC, on graphite substrates with defined trenches and steps. This work demonstrates that the conformal CVD approaches are feasible both in the nanometer and micrometer ranges, and at high CVD temperatures.