There is a clear decrease of NHx coverage when traversing down the 13Ns by increasing the atomic number of the metal. AlN is covered by nitrogen-containing terminations in a much larger temperature and pressure range compared to GaN which in turn is much more covered compared to InN. This would in turn lead to a much less favored CVD or ALD process for InN since much less of the supplied NH3 would bind to the surface to facilitate film growth. From the literature on experimental studies of 13N deposition by CVD and ALD, it is clear that InN is more challenging to deposit than AlN and GaN.