Graphene heterostructures and 3D architectures, intricately patterned and combined with various functional materials, exhibit diverse properties and hold significant potential for advancing optoand bioelectronics, sensors, and energy conversion and storage technologies. Current patterning techniques mainly employ wet chemistry, focus on 2D functionalities, and do not allow vertical stacking in desired places. Atomic layer deposition (ALD) and molecular layer deposition (MLD) are useful tools to control thin film growth on different surfaces. Both methods provide uniform layer-by-layer growth over large areas, while MLD uses organic precursors instead of inorganic or metal-based reactants. The modularity of these techniques enables their combination into a process known as atomic/molecular layer deposition (ALD/MLD). This combined approach has been shown to produce metal-organic thin films with enhanced mechanical and optoelectronic properties. Area-selective deposition (ASD) is increasingly being explored as a promising alternative to conventional top-down methods, offering the advantage of reducing edge placement errors. ASD enables thin film growth predominantly on designated surfaces, even when multiple different surfaces are present under identical processing conditions. To maximize the effectiveness of ASD, it is crucial to differentiate between growth areas (GA) and non-growth areas (NGA) by using bottom-up process technology to achieve high selectivity. Area-selective ALD (AS-ALD) and MLD (AS-MLD) have already been employed on many materials, including the growth of 2D materials (2DM). Utilizing inhibitors to suppress the deposition in undesired areas is the dominant method in current ASD, however, it requires additional lithographic steps. Due to the inherent 2D nature, the surface of 2DM does not provide sufficient reactive sites for the chemisorption of ALD/MLD precursors compared with traditional microelectronics. While AS-ALD has been demonstrated on 2DM, its combination with AS-MLD remains largely unexplored. Functionalization of distinct surface areas is required to allow the selective growth of materials. Selectivity can be enhanced using surface functionalization by self-assembled monolayers, electron beam irradiation, UV exposure, oxygen plasma treatment, or by growing lateral superlattices. Recently, we proposed a way to overcome the chemical inertness of graphene to ALD precursors by locally activating the surface using direct femtosecond laser (fs-laser) two-photon oxidation (TPO) for area-selective ZnO deposition. This method photochemically attaches oxygencontaining groups to graphene by exposing it to ultrafast laser pulses under an ambient atmosphere. As a result, hydroxyl and epoxy groups form on the graphene surface with moderate laser exposure, while carbonyl and carboxyl groups appear at higher irradiation doses, closer to the ablation threshold. TPO provides precise control over the oxidation level of graphene and enables the patterning of complex structures with high spatial resolution (~300 nm), with the potential to achieve 20 nm resolution using tip-enhanced techniques. Additionally, this is a simple, resist-free ultrafast direct laser writing (UDLW) method, and the oxidized graphene surface can be restored to its initial state through thermal annealing in an inert atmosphere. Here, we report the first AS-ALD/MLD for metal-organic thin films on graphene. Europiumorganic thin films deposited via ALD/MLD show interesting photoluminescence properties, which are difficult to achieve using typical ALD of europium-oxide. We combined UDLW and ASD to develop luminescent graphene/Eu-organic heterostructures in predefined areas using TPO. We achieved high homogeneity and over 90% selectivity in locally activated graphene regions for Eu-organic films up to 11 nm. The fabricated graphene/Eu-organic thin films exhibited high photoluminescence emission even when excited with a continuous wave (CW) 532 nm laser, while Eu 3+ ions typically require UV excitation. These ALD/MLD films can also act as inhibitors for subsequent depositions, allowing for the addition of new functionalities to graphene-based heterostructure devices.