We calculate the spin-independent band structure and partial density of states (PDOS) for FBNF and compare it with h-BN. The electronic band structure is calculated along the Γ-K-M-Γ direction of the Brillouin Zone (BZ) ( Fig. ). The valence band maximum (VBM ) and conduction band minimum (CBM) is positioned at the Γ point of BZ with bandgap 3.39 eV indicates the FBNF a large bandgap semiconductor agrees with the previous report . The computed bandgap is 26.62 % smaller than h-BN (4.62 eV). The N-2 and F-5 , B-2 energy orbitals dominate the contribution in CBM and VBM, respectively in the vicinity of Fermi level to reduce the bandgap relative to h-BN. This also demonstrates the influence of fluorination. This wide direct bandgap and induced semiconducting functionality of FBNF makes it a potential candidate material for application in high-temperature processors, solid-state lighting, solar cells, and power electronics .