GI-XRD analysis of the films suggest that they are x-ray amorphous. The elemental composition from XPS analysis of films deposited at various plasma exposure times is shown in Fig. . The fluorine content could be reduced from 8.5 at.% to 1 at.% when increasing the plasma exposure from 2 seconds to 60 seconds. The oxygen content shows an increase with longer plasma exposure (≥ 10 s) from 48.6 at.% to 55.5 at.%. To further understand the influence of plasma exposure time on the chemical state of the deposited material, high-resolution XPS analysis of F 1s and Cu 2p in the deposited films are shown in Fig. and, respectively. Fig. shows the F1s spectra as a function of plasma exposure time, where the peak for fluorine bonded with copper at 685 eV and the organic fluorine peak at 688 eV were observed. By increasing the plasma exposure time, both the organic and metal-bonded fluorine peaks are reduced. The Cu 2p spectra of the copper surface as a function of plasma exposure time show that a peak corresponding to Cu-OH at 934.7 eV (Cu 2p3/2) increased gradually indicating oxidation of the Cu under plasma exposure as the plasma exposure time increased (Fig. ). The oxidation is also confirmed by the increase of the satellite peak attributed to copper with oxidation state +II at around 939.0-944.1 eV (Cu 2p3/2), while the peak at 962.1 eV corresponds to a satellite peak of Cu 2p1/2. We believe that the oxidation of copper could arise from oxygen radicals generated either by the moderate vacuum conditions (background pressure 6 Pa) or by the breakdown of the Cu(hfac)2 precursor molecules.