The electronic transport properties were calculated for n-type doping with carrier concentrations in the range of 10 18 -10 21 cm -3 and temperatures between 100 K and 1000 K. The variation of the Seebeck coefficient, electrical conductivity, power factor and electronic thermal conductivity with temperature for carrier concentrations of 1 × 10 18 cm -3 , 1 × 10 19 cm -3 , 1 × 10 20 cm -3 , and 1 × 10 21 cm -3 in the xy plane and along the z direction can be seen in Figures and, respectively. We limit the present discussion to n-type doping, as the band alignment suggests n-type behaviour, but calculations for both n-and p-type transport (including scattering rates) can be found in the zenodo repository. Of the four electrical properties, the Seebeck coefficient exhibits the least anisotropy. With n-type doping the Seebeck coefficient is negative and shows a gradual decrease with temperature. For both the in-plane and out-of-plane directions S follows the expected trends, with the largest doping concentrations leading to least negative values (i.e smaller absolute values). The Seebeck coefficients in the xy plane span ranges of -657 to -422 µV K -1 at n = 1 × 10 18 cm -3 and -82 to -23 µV K -1 at n = 1 × 10 21 cm -3 . In the z direction, more negative Seebeck coefficients are obtained ranging from -778 to -396 µV K -1 at n = 1 × 10 18 cm -3 and -173 to -43 µV K -1 at n = 1 × 10 21 cm -3 . This can be ascribed to the shallow curvature and degeneracy of the bands along the out-of-plane direction, as the Seebeck coefficient S is proportional to the number of band extrema (N v ) and effective electron mass (m * ) and inversely related to the carrier concentration (n) via