The majority of conditions have Fermi levels ± 0.5 eV from the mid gap. Under the most O-poor conditions, the Fermi level is ≤ 0.24 eV away from the CBM. Therefore, the material is a weak semiconductor, and can be made more n-type than p-type. The intrinsic defects are not likely to generate significant quantities of free charge carriers that contribute to conductivity and electronic conduction would be mainly governed by the hopping of small polarons. Ni 3+ /Mn 3+ are the dominant charge compensating ions under all conditions.