To achieve more conformal coverage on the pristine surfaces of 1D and 2DM, the physical adsorption of precursor molecules can be utilized at lower temperatures. However, nonspecific physical adsorption compromises the selectivity of ALD and MLD. This challenge can be addressed by utilizing the physisorption and diffusion of ALD precursors in superlatticebased ASD, as demonstrated for MoS2 (blocking area) and MoSe2 (deposition area) crystal structures. In our case, the ASD process is driven by chemisorption. Annealing during ALD/MLD restores the graphene surface at low and moderate fs-laser doses, reducing the chemical interaction with the film, as observed in the Raman spectra (see Figures and). At moderate to high doses, the interaction between graphene and Eu-BDC films remains strong. By carefully tuning the fs-laser dose, it is possible to control the interaction strength. A weaker interaction is preferable for transistor applications, while a stronger interaction is advantageous in designing graphene-based heterostructures that require enhanced electron transfer between graphene and functional films, for example, in optoelectronics and photonics.