The literature shows that other 13-15 semiconductor materials such as GaN have been deposited on bulk ZrB2 substrates and ZrB2 thin films deposited by thermal decomposition of Zr(BH4)4 on Si(111) at 900 °C in UHV . In a recent publication, Padavala et al. deposited films of BP by CVD from diborane (B2H6) and phosphine (PH3) deposited at temperatures of 1000, 1100, and 1200 °C on epitaxial ZrB2 thin films. In this work, we investigate CVD of sp 2 -BN films from triethylboron (TEB, B(C2H5)3) and NH3 at 1485 °C, using ~300 nm thick epitaxial ZrB2 films deposited by direct current magnetron sputtering (DCMS) on 4H-SiC(0001) substrates and where the choice of substrate material resulted in ZrB2 films free of crystal twinning .