Gao et al. reported the growth of S-doped graphene over Cu metal via CVD using sulfur powder in hexane as the starting material . Furthermore, the concentration as well as the carrier mobility of doped sulphur were comparatively lower than the expected which probably as a result of the less quantity of synthesized S-doped graphene. To circumvent this issue, the S-doped graphene was prepared by CVD using thianthrene which function as the precursor of both carbon and sulphur and the experimental setup is shown in Fig. . The concentration of doped sulphur is as high as 4.01 at% and the maximal mobility of SG reached up to 270 cm 2 V -1 s -1 , which are the highest ever reported for sulphur doped graphene . In another literature, three-dimensional S-doped graphene having high S content of 2.9 at% over precursors of carbon and boron in presence of ferrocene as the catalyst, respectively.