azidoundecyltriethoxysilane. A solution of 11-azidoundecyltriethoxysilane (3.5 × 10 -3 mmol, 1.1 mg) in ethanol (1 mL) was prepared. The silicon oxide surface and wafer containing SOµC with an area of 2 cm 2 was immersed in the prepared solution. The reaction continued overnight with a slight agitation (150 rpm) at room temperature. Then, the samples were rinsed with absolute ethanol three times and dried using nitrogen.