We show that a time-resolved CVD approach by plasma ALD affords InN films with superior morphology and crystalline quality compared to a conventional, continuous CVD approach by standard thermal metalorganic CVD. We show that the key difference between the processes is not only the plasma activation of the ammonia, but also the time-resolved precursor supply and how this is used to control the dynamics of the deposition chemistry. InN with smooth morphology can be obtained by the plasma ALD approach at 320 °C, provided that adequate time is given between the In-and N-precursors, presumably to allow physisorbed surface species to either chemisorb or desorb. We suggest that the detailed surface dynamics of In species is studied in detail by modeling to provide more insights. This study, and previous findings in the literature, demonstrates the importance of using a time-resolved precursor supply in CVD of InN, in which the purge time play an important role. It should also be noted that the best results in this study outside the window where the deposition per ALD cycle is constant with temperature. Such observation suggests that a true, self-limiting ALD behavior is not the most critical factor, but rather the dynamic precursor supply. Meanwhile, the experimentally optimal purge time and precursor pulse time should vary from reactor to reactor based on their geometry and volume. ACKNOWLEDGEMENT