To select film and device fabrication parameters, we considered fundamental processes in OPV, such as light absorption and exciton formation, exciton migration, charge separation, and charge migration to the electrodes. Each of these processes is influenced by specific parameters related to the donor, acceptor, and active layer casting conditions. The selection of parameters aimed to capture the relevant information for these processes. These parameters included donor and acceptor material properties (HOMO, LUMO, E g opt ), donor:acceptor (D:A) ratio, solvent, total solids concentration, additive (and concentration), active layer thickness, thermal annealing temperature, hole transport layer (HTL), electron transport layer (ETL), hole mobility, and electron mobility. Other well-studied device performance characteristics such as effective mobility, Langevin prefactor, and Voc vs ln(I) slope were not reported with enough consistency to be included in the dataset.