The introduction of impurities or dopants allows the tailoring of the phosphorene properties, where dopants can be experimentally introduced as in related low-dimensional nanomaterials, this is by chemical modification, intercalation, low-energy ion implantation, and defect-assisted doping by electron beam into irradiation . In this sense, transition metals (TM) display distinctive properties across the periodic table (e.g., atomic radius, electronegativity), which are strongly influenced by the increasing number d electrons. These distinctive properties are used as a strategy to modify and modulate semiconductor, magnetic, and chemical reactivity properties .