We turn now to the case when the rst-excited state in the (2,0) conguration has one electron in the low-energy valley and the second electron in the higher-energy valley, As mentioned earlier, experimental reports from the Wisconsin-Madison group indicated that the rst excited state in the (2,0) conguration in a Si/SiGe DQD is the spin-triplet state with both electrons in the same lower-energy valley, whereas experimental measurements from other groups on Si-DQD devices (with apparently dierent parameters) indicated that the rst excited energy level in this conguration is associated with a state having each electron in a dierent valley [see states nos. 2 or 3 in Fig. ]. In particular, using microwave-frequency scanning gate microscopy, Ref.