Actually, the defects obtained as a result of removal of oxygen groups could be active sites for the chemical substitution of carbon atoms by boron atom. It has been suggested that the when the temperature is enhanced then the active sites on graphene sheets is also increased which permits the more and more boron atoms to occupy the sites in an effective manner. The N, S co-doped graphene was also produced using thermal annealing by the precursors namely benzyldisulfide and melamine and achieved the doping content of S and N are 2.0 and 4. by hydrogen reduction at 500 °C for 0.5 h followed by heating at 700 °C for 0.5 h under Ar atmosphere using boric acid as the dopant and achieved the doping content of 5.92 at. % .