In calculating the electron density and electrons per NC from the HEDA fitting results, we identify contributions to these values from the as-synthesized NCs and from the reduction process, then correlate them to the NC diameter and Sn doping concentration. For a fixed doping concentration, we find a progressive increase in the maximum number of electrons per NC, <Nmax>, with size, at the saturation value achieved through chemical reduction with CoCp*2 (Figure and). This trend parallels the trend for the electrons per NC in as-synthesized NCs <Nsys>, as does the maximum electrons supplied through the chemical titration <Ntitr>. As might be expected, a greater number of electrons can be accommodated in larger NCs, which have a higher number of dopant ions and a higher number of proton intercalating sites. This result, derived here by LSPR peak fitting, corroborates similar results previously found by electron counting methods. The increase in <Nmax> is approximately in proportion to the NC volume, so the maximum electron density <nmax> after chemical reduction with CoCp*2 is independent of the NC diameter and seems to be fixed around ~10 21 cm -3 for 4.5% Sn doping (Figure ). We note that the electron density of assynthesized, <nsys>, larger NCs is more than that for smaller NCs, however, less electron density is added on chemical reduction, <ntitr>, as compared to small sized NCs. This offset between <nsys> and <ntitr> leads to stagnancy in the <nmax>. The constancy of <nmax> at saturation suggests that for the same doping percentage, irrespective of the NC diameter, the Fermi level is at the same energy with respect to the conduction band minimum of In2O3 at complete chemical reduction. These observations are in excellent correlation with those made during both the chemical reduction and photodoping of undoped ZnO NCs. However, <nmax> in undoped ZnO NCs was found to be on the order of 10 20 cm -3 , which is an order of magnitude smaller than that for doped In2O3 NCs, where aliovalent doping is expected to increase the electron density. Very similar trends in electron density are obtained with size series of Sn:In2O3 NCs with different Sn at% (Figure ). Analogous to the results of the size series, for the doping series, volumetric addition of CoCp*2 leads to an increase in the electron density and simultaneous increase in the volume fraction of the plasmonic core (Figure ). The maximum number of electrons per NC is quite similar for different doping percentages (Figure , S16). Moreover, the electron density of the as-synthesized NCs, <nsys>, increases in an approximately linear fashion with Sn doping percentage (Figure , S19), indicating a near-constant fraction of activated dopants. The electron density introduced through the chemical reduction, <ntitr>, is insensitive to the Sn doping concentration (Figure ) and is ~2.38 x 10 20 cm -3 which causes <nmax> to increase with doping in the same way as <nsys>. Photodoping studies on a doping series of Sn:In2O3 NCs and other doped metal oxides have reported similar observations. 17, 32-33, Here, we confirm and interpret these trends by analyzing the distribution of electrons between the core and depletion layer as chemical doping proceeds.