We presented a comprehensive XPS/ARPES and XAS study on the heterostructure system of CoPc and CoPcF16. Our findings show that CoPc and CoPcF16 can both be used for Fermi level engineering of bulk MoS2, however with notable differences in the mechanism of their action. CoPc induces a surface dipole and a downwards band bending, which is consistent with previous findings for other phthalocyanines. The influence of adsorbed CoPc extends into multiple layers of the MoS2 substrate. In contrast, the n-type character of MoS2 is reduced through interaction with CoPcF16. The results of the study suggest the presence of an induced gap state, and the interaction is limited to only the first layer of the MoS2 bulk crystal. While this study has focused on the interface of bulk MoS2, the question remains open as to whether these findings can be directly transferred to heterostructures with two-dimensional MoS2. The electronic structure of two-dimensional MoS2 differs from that of bulk crystals. However, the effects described here are found directly at the interface, which could make them highly relevant for these materials as well.