Based on the latter concept, Kumar et al. have further enhanced the surface blocking effect by adding a growth inhibitor, e.g. free dme (1, 2-dimethoxyethane), to the deposition of TiB2 thin films using Ti(BH4)3(dme) as the precursor, resulting in a substantial increase in the conformality. A conformal CVD process for boron carbide from trimethyl boron was recently reported by Souqui et al. , where atomic hydrogen was suggested to inhibit the growth of BxC on the surface.