Given the near-ultraviolet PL emissions of these materials, the energy transfer process from them to different kinds of long-wavelength achiral luminescent materials are subsequently studied , including fluorescence (TPBe and DBP), phosphorescence (Ir(tptpy)2acac), TADF (4CzTPNBu) and MR-TADF (BN3) materials, whose absorption spectra are well overlapped with the PL spectrum of S-BNPCN-o-CP (Supplementary Fig. ). Delightfully, by exciting S-BNPCN-o-CP with 320 nm light, the toluene solutions containing S-BNPCN-o-CP (3.0 × 10 -5 M) and achiral luminescent materials (6.0 × 10 -6 M) show long-wavelength PL peaks from achiral luminescent materials, accompanied by detectable CP-PL signals (Supplementary Fig. and Fig. ). This finding implies FRET process occurs from S-BNPCN-o-CP to long-wavelength achiral luminescent materials, regardless of the luminescence nature . To further study this phenomenon, the PL and CP-PL spectra are recorded for the mixed systems of BN3 and S-BNPCN-o-CP in toluene solutions, under the excitation of 320 nm light. The PL peak of S-BNPCN-o-CP becomes weakened gradually by increasing BN3 concentration (Fig. ), indicative of FRET process from S-BNPCN-o-CP to BN3 . In the absence of BN3, only the CP-PL signal at ~400 nm from S-BNPCN-o-CP is observed, without other CP-PL signals. By increasing BN3 concentration, a new CP-PL signal appears and gets intensified at 556 nm (Fig. ), which stems from BN3. Afterward, this phenomenon is studied in film state. The achiral luminescent materials exhibit clear CP-PL signals at their corresponding PL wavelengths by doping them (3 wt%) no matter in S-BNPCN-o-CP and S-BNPCN-p-CP neat films or in poly(methyl methacrylate) (PMMA) film containing 5 wt% or 20 wt% S-BNPCN-o-CP (Fig. , Supplementary Figs. 13-15). By increasing BN3 concentration in PMMA film doped with both BN3 and S-BNPCN-o-CP, the CP-PL signal from BN3 is enhanced accordingly, more obvious than that observed in toluene solutions (Supplementary Fig. ). These results disclose that the CP-PL signals of the long-wavelength achiral luminescent materials is indeed induced by the short-wavelength CPL material during FRET process. Such kind of energy transfer process accompanied by the inducement of CP-PL signal may provide a facile and universal approach to realize CP-EL for achiral luminescent materials. Taking the advantage of excellent ΦPLs and good gPL values in neat films, these near ultraviolet CPL materials are initially employed as chiral emitters for nondoped CP-OLEDs with the configuration of ITO/HATCN (5 nm)/TAPC (50 nm)/TcTa (5 nm)/mCP (5 nm)/EML (20 nm)/PPF (5 nm)/TmPyPB (30 nm)/LiF (1 nm)/Al, in which their neat films serve as emitting layer (EML), hexaazatriphenylenehexacabonitrile (HATCN), tolylaminophenyl)cyclohexane (TAPC) and PPF act as hole injection, hole-transporting and hole-blocking layers, respectively, tris(4-(carbazol-9-yl)phenyl)amine (TcTa), 1,3-di(carbazol-9-yl)benzene (mCP) and 1,3,5-tri(m-pyrid-3-yl-phenyl)benzene (TmPyPB) work as exciton-blocking, electron-blocking and electron-transporting layers, respectively. S-BNPCN-o-CP and S-BNPCN-p-CP radiate near ultraviolet lights with EL peaks at 406 nm (CIEx,y = 0.160, 0.040) and 414 nm (CIEx,y = 0.158, 0.048), narrow FWHMs of 52 and 47 nm, and maximum luminance (Lmax) of 4743 and 11570 cd m -2 , respectively (Fig. and Table ). Owing to the enhanced ICT effect, S-BNPCN-o-TBCP and S-BNPCN-p-TBCP show red-shifted EL peaks at 422 nm (CIEx,y = 0.156, 0.056) and 428 nm (CIEx,y = 0.154, 0.063), and increased FWHMs of 60 and 61 nm, respectively. The nondoped devices of S-BNPCN-o-CP and S-BNPCN-p-CP provide high ηext,maxs of 6.7% and 7.8%, respectively, and enjoy high efficiency stability with neglectable efficiency roll-offs of 1.5% and 0.0% at 1000 cd m -2 luminance. The devices of S-BNPCN-o-TBCP and S-BNPCN-p-TBCP also exhibit high ηext,maxs of 6.1% and 6.4% and tiny efficiency roll-offs of 3.2% and 0.0%, respectively, at 1000 cd m -2 luminance. The high and stable EL efficiencies should be attributed to not only the high solid-state ΦPLs but also fast hRISC process that successfully improves triplet exciton utilization and alleviates triplettriplet annihilation. Besides, all the R-enantiomers show similar EL performances to these S-enantiomers (Supplementary Table ), and the nondoped device of R-BNPCN-p-CP achieves an impressive ηext,max as high as 8.0% at 414 nm (CIEx,y = 0.157, 0.043; FWHM = 55 nm), without efficiency roll-off at 1000 cd m -2 luminance. Owing to their CP-PL nature, all the S/R-enantiomers exhibit good CP-EL signals (Fig. and), and their nondoped devices display mirror-image CP-EL spectra with high absolute EL dissymmetry factor (|gEL|) values of up to 3.59 × 10 -3 (Fig. ). To the best of our knowledge, these are the first examples for high-performance near ultraviolet nondoped CP-OLEDs reported so far.