From the literature, in the SiC deposition chemistry with SiCl4 and C2H4, HCl is regarded to be the most probable candidate for surface site blocking , and in the work from Schulberg et. al. it was shown that the HCl inhibition of SiC growth was a result of surface processes. Based on the idea of using inhibitors to achieve highly conformal film growth, proposed by Kumar et. al. , deposition experiments with HCl added to the 3C-SiC growth process were performed and its influence on the coating conformality were investigated. The initial deposition conditions (pH2/pSi= 50, 950 ℃, and total pressure of 1 kPa) were chosen so that a nearly conformal coating could be grown, and the partial pressure of added HCl, padded HCl, was slightly increased in the subsequent depositions, corresponding to a pCl/pSi ranging from 4 to 4.75.