A hot-wall Picosun R-200 Advanced ALD reactor, equipped with a Litmas remote inductively coupled plasma (ICP) source, was used for deposition. The reactor operated at 4 mbar with a continuous flow of 400 sccm high-purity N2 (99.999 % with further drying using a getter filter) into the chamber, which was also used as the purge gas. TMA (Epivalence, electronic grade) was kept at 22 °C and vapor was drawn by opening a valve to the low-pressure reactor. The thermal processes used NH3 (AGA/Linde, 99.999 % and further purified by a getter filter) as the nitrogen precursor whereas the plasma ALD processes used a plasma discharge in a mixture of 75 sccm NH3 and 100 sccm Ar (99.999 % and further purified by a getter filter). The ICP plasma source was located approximately 75 cm above the substrate and ignited the plasma with a 2800 W plasma power. Prior to deposition, Si(100) substrates were cleaned with acetone and isopropanol for 10 minutes each to remove surface contaminants before blow-drying them with N2 gas.