Gallium nitride (GaN) is a key material in microelectronics based on the group 13-nitride materials. This is due to its favourable properties of wide and direct bandgap, high thermal stability, high breakdown field and good electron mobility. In high frequency electronics, GaN films are preferably deposited on SiC due to its high thermal conductivity. However, it is difficult to deposit GaN directly on SiC by CVD due to poor wetting of GaN on SiC. Therefore, an AlN buffer layer is used to facilitate GaN growth. Currently, thin films of electronic grade epitaxial GaN are deposited by chemical vapor deposition (CVD) processes using trimethylgallium (TMG) and ammonia (NH3) at temperatures between 800-1000 C. The high deposition temperatures are required to obtain highly crystalline films but also to overcome the poorly suited precursor combination of TMG and NH3, which leads to high N/Ga precursor ratios of 10 3 . They also hinder the deposition of highly conformal GaN films on topographically complex surfaces and on temperature sensitive materials. To meet these challenges, the low temperature time-resolved CVD route known as atomic layer deposition (ALD) has been studied for GaN. Deposition of GaN by ALD has been achieved using TMG or triethylgallium (TEG) with N2/H2 plasma , NH3 plasma or thermally with NH3 . However, these processes suffer non-stoichiometric Ga/N ratios and high carbon and oxygen impurities.