CNT membranes or Si substrates were loaded into a SiC-coated graphite susceptor in the CVD reactor. The reactor was evacuated, backfilled with hydrogen gas (H2), and heated to deposition temperature, 550 °C, under a 2000 sccm flow of H2 at 5 kPa, regulated by a throttle valve on the process pump. The temperature was stabilized for 5 minutes at the deposition temperature before initiating the deposition process by introducing TEB into the reactor. A flow of 1 sccm of TEB, resulting in a partial pressure of 1.18 Pa, was used along with 100 sccm of xenon (Xe), achieving a partial pressure of 18 Pa. The total pressure was maintained at 5 kPa for the deposition.