, where (hkl) is the growth plane investigated, I m the normalized measured intensity (with the background intensity removed), I 0 the normalized intensity from a randomly oriented polycrystalline sample (referenced from PDF cards) and n the total number of considered growth planes. Here the intensities from 3C-SiC (111), ( ), (311), (200), and (331) planes were taken into account; therefore, n= 5 was used for the TC calculation. The surface morphology and layered structure of the 3C-SiC coatings was probed by scanning electron microscope (SEM). The growth rate of each layer was calculated by dividing the layer thickness measured from the SEM cross-sectional images by the deposition time. . They have shown via computational fluid dynamics (CFD) that by using C 2 H 4 as carbon precursor the mole fraction of C 2 H 2 increased with decreasing C 2 H 4 along the gas flow direction. In contrast, by using CH 4 as carbon precursor CH 4 was the most abundant species and its mole fraction stayed constant throughout the whole reactor. In a later study conducted by Sukkaew et al., CH 4 was further reported to be inactive towards the growth of SiC .