The utilization of multiple single-component precursors allows for alternate precursor pulsing, creating an additional degree of freedom in process design. If the pulses from different precursors are fully separated, no gas phase interaction between them would occur, and the growth process would be only dictated by surface reactions, which can change the character of the deposition process. Such pulsed CVD processes have shown benefits for some deposition processes. One example is the deposition of GaN nanowires without metal catalyst on a SiNx-masked Si substrate using trimethyl gallium (Ga(CH3)3) and ammonia (NH3) as precursors . In the conventional CVD mode, where both precursors are flowing into the chamber simultaneously, a continuous GaN film was obtained, while the alternate pulses of precursors resulted in uniform arrays of GaN nanowires. The extreme end of the pulsed CVD spectrum enables conformal film growth when the pulsing of gases renders a self-limiting surface chemistry, i.e., the chemisorption stops when no more surface sites are available. This type of pulsed CVD is normally called atomic layer deposition (ALD) . Several attempts to grow crystalline SiC by ALD at T > 800 ℃ have been reported , but, strictly speaking, they are not ALD process because the surface chemistry is not self-limiting at such high temperature and the resulting high growth rate also indicates that a CVD growth is involved . The self-limiting surface chemistry of ALD also makes it impossible to achieve a superconformal growth necessary for applications where recessed features should be filled. The conformality of a coating or film is assessed by the step coverage (SC), which is defined as the ratio of the growth rate at the lower sidewall (close to the bottom) to that at the upper sidewall (close to the top) of a trench or a via. A SC < 1 indicates a subconformal growth, whereas SC = 1 and SC > 1 imply a conformal and a superconformal growth, respectively.