As depicted in Figure , the open circuit voltage (Voc) and short circuit current (Jsc) increase continuously with the enhancement of HTM doping density. Although the efficiency rises with increasing doping density, the improvement becomes minimal beyond a certain optimal acceptor doping density. The optimal HTM acceptor doping density for the cell is 1×10²⁰ cm⁻³, at which the maximum PCE is 28.77%. The doping density of the absorber layer is crucial for enhancing the efficiency of perovskite solar cells, as carrier generation and collection depend significantly on this parameter. Figure shows that the open circuit voltage increases slightly with the rise of absorber layer defect density, but the short circuit current drops significantly. An optimal absorber layer acceptor doping density is vital to balance Voc and Jsc to achieve maximum efficiency. For the proposed cell, the optimal absorber layer acceptor doping density is 1×10¹⁶ cm⁻³, yielding Voc = 0.969 V, Jsc = 35.23 mA/cm², FF = 86.26%, and PCE = 29.45%. The optimization of doping density in the absorber layer improves efficiency by mitigating non-radiative recombination pathways, as reported by Stranks et al. .