Monolayer MoS2 were mechanically exfoliated and transferred to as prepared hBN/G via PDMS covered both the functionalized area (F-G) and non-functionalized area of graphene (non-F-G). The heterostructure was annealed at 200 °C for 2 h in vacuum to enhance the interlayer contact between MoS2 and hBN/G. The PL and Raman measurements were performed afterwards. F-G/MoS2 heterostructure was also fabricated directly on Si/SiO2 wafer without the hBN layers for compared studies. To get a better resolution, 2400 grating was used for the readout of the MoS2 Raman spectra.