The primary material parameters describe the components of the active semiconducting layer as well as any other materials (i.e., solvents, chemical treatments) included in the processing procedure. The polymer and any other components are dissolved into a solution that is ultimately deposited onto the device substrate. As the behavior of the polymer in the solution state is a key determinant of its thin-film behavior, all information associated with the solution makeup and its processing is especially crucial to capture for data provenance purposes. Choices in the material characteristics of the polymer (i.e., molecular weight distributions, regioregularity, tacticity, etc.) yield a range of structural and morphological motifs that in turn significantly impact device performance. The identity of the solvent(s) used affects not only the polymer-solvent interactions in the solution-state, but also the dynamics of the thin-film deposition process, thereby influencing the structure and performance of the final active layer. The OFET device substrate is a layered device structure, comprising substrate, gate electrode, dielectric, and source/drain electrodes. The most common electrode configurations used in the organic electronics community include (a) bottom-gate bottom-contact (BGBC), (b) bottomgate top-contact (BGTC), (c) top-gate bottom-contact (TGBC), and (d) top-gate top-contact (TGTC). The electrode configuration is a necessary contextual detail for reporting a device measurement, as substrate designs often take advantage of charge carrier behavior at different interfaces. Additionally, as substrate design parameters (i.e., channel dimensions such as width and length) and material choices (i.e., electrode material, dielectric, etc.) may influence device measurements, this design information is important to include in a data entry to promote experimental reproducibility. An emphasis of the work herein is that processing information is indispensable for the purpose of storing reproducible device data. Seemingly minor differences in processing can lead to significant changes in the recorded charge-carrier mobility of an OFET sample. Omitting information related to this process history will therefore lead to errors or inaccuracies when comparing device data across experiments. Even prior to deposition, the solution and device substrate undergo process transformations that can affect the deposited thin-film and device characteristics. Solution-based processes may include operations such as sonication, aging, poor solvent addition, cooling, etc. 39 in a prescribed sequence to promote solution-state aggregation, while surface pretreatment procedure may include, for example, a cleaning process (e.g., UVozone or plasma treatment) followed by a surface modification step via self-assembled monolayer (SAM). As an example, differences in solution aging times (i.e., 3 hr, 6 hr, 24 hr prior to coating) can lead to noticeable structural changes that affect the final value of the device measurement in P3HT. The coating process could be performed through a plethora of solution casting methods including drop casting, spin coating, blade coating, inkjet printing, slot die coating, etc. that all have different physical impacts on thin-film morphology and therefore device performance, especially when coupled with solution pre-treatment. Meniscus-guided coating techniques, for example, yield a set of deposition regimes governed by a complex parameter space that includes flow conditions, coating speeds, stage temperatures, drying times, contact angles, etc. In combination with solution properties and surface interactions, coating conditions are often chosen carefully to tune the morphology of the deposited thin film. Post-processing operations may also be performed after the coating stage, such as annealing or selective etching, to further control the thin-film morphology.