We attribute the excitation at 532 nm to a pure magnetic dipole transition 7 F0 → 5 D1, which peaks at 526 nm (Figure ). The 5 D1 state then relaxes non-radiatively to the level 5 D0, which emits via the 5 D0 → 7 Fj (j = 0, 1, 2, 3) transitions. However, the emission may also occur via 5 D1 → 7 Fj transitions with a much shorter lifetime. A strong PL signal after ALD/MLD centered at ≈612 nm was detected on TPO graphene prepared with a relatively low irradiation dose of 90 pJ 2 s, and the signal intensity increased with higher TPO irradiation doses (Figure ). The PL intensity from the TPO areas was up to 20 times higher at a fs-laser dose of 158 pJ 2 s and up to 52 times higher at 625 pJ 2 s dose compared to the PL signal from pristine graphene areas after 50 ALD/MLD cycles (Figure ). However, after 100 ALD/MLD cycles, the enhancement of PL intensity in the TPO areas decreased, and was ≈15 and ≈20 times stronger, respectively, due to the partial deposition of Eu-BDC on the pristine graphene areas (Figure ). Overall, this provides strong evidence of precise AS-ALD/MLD deposition of Eu-BDC films on TPO graphene and demonstrates the ability to localize luminescence using selective deposition.