Si/SiO2 (300 nm oxide thickness) substrates (University Wafers) were diced and cleaned by sonication in acetone and then IPA separately. Then graphite (2D Semiconductors) was placed on an adhesive plastic film (blue tape) from Ultron Systems (P.N. 1009R-6.0). We chose the least sticky tape to reduce the amount of tape residue produced on the substrate. By taking a second blue tape, we propagated the bulk graphite across the tapes until they were densely packed with graphite. We targeted regions of the tape that had graphite planes protruding perpendicular to the tape's plane and placed the substrate SiO2 face on the tape. Flipping the tape over, we rubbed the tape with carbon-tipped tweezers such that the tweezer was in contact with the tape/SiO2 interface. The final step was to release the tape while keeping the tension at a maximum by holding the substrates as we remove the tape.