The reduction method was applied to pattern (GO/rGO)/TNC via photocatalytic lithography. This approach enables the fabrication of resistive r.h. sensors with selectively tuned GO/rGO ratio and, hence, adjustable electrical properties and sensitivity to water. For this purpose, multilayered hybrid films were deposited on silicon wafers and exposed through a patterned quartz mask. Figures ) show optical microscopy images of a (GO/rGO)/TNR thin film (four LbL-SC cycles) after DUV exposure (1 h) through a photomask with a checkerboard pattern and meander structure. Differences in contrast indicate the selective reduction of GO on the DUV exposed areas (dark areas). To verify the spatially resolved reduction, hybrid films (four LbL-SC cycles) were deposited on IDEs and illuminated through a photomask with stripes (20 µm width) aligned either perpendicular or parallel to the IDEs. Figure ) shows the resulting IV-curves, demonstrating that DUV exposure perpendicular to the IDEs leads to a significant increase in conductivity, confirming the formation of conductive rGO patterns connecting the IDE fingers, as shown by the microscopy image in the inset, top left. For DUV exposure parallel to the IDEs, no significant increase in the measured current was observed, confirming the selective reduction of GO only on the exposed areas.