In the present work, we harness a suitably designed, light-induced atomic reconfiguration that simultaneously enhances the device's efficiency and provides complete stability to the photoanode, addressing the challenges mentioned above and resulting in a record performance in stability and efficiency in buried homojunction-free photoanodes. The photoanode comprises a NiFe oxyhydroxides-alloy hybrid layer generated from the NiFe alloy thin-film (Fig. ). The NiFe oxyhydroxides generation process involves surface amorphization and light-accelerated oxyhydroxidation, including chemical state changes of Ni/Fe-containing species, followed by a signifi-cant expansion of active sites to the reaction interface (Fig. ). Such evolved active sites provide essential kinetic stabilization for the water oxidation reaction, avoiding hole accumulation and consuming hydroxide ions before they can corrode the Si substrate .