Polycrystalline silicon carbide (SiC) is a protective coating of choice in many industries due to its high chemical inertia, hardness and temperature stability. Among SiC polytypes, cubic SiC, also known as 3C-or β-SiC, is the most used in refractory applications due to its relatively low formation temperature. One of the techniques frequently adopted for the synthesis of polycrystalline 3C-SiC is chemical vapor deposition (CVD) . In a SiC CVD process, multicomponent precursors, e.g. methyl trichlorosilane, can assure unity of C/Si ratio in the gas phase, whereas singe-component precursors containing only C or Si can grant the process extra degrees of freedom in choosing different Si-and C-source precursors . Chlorinated silanes, especially silicon tetrachloride (SiCl4) are widely used precursors in many SiC processes. The addition of Cl to the SiC CVD processes has been reported to not only increase the growth rate but also prevent the formation of Si droplets in the gas phase. The stronger Si-Cl bonds (400 kJ/mol) can suppress the formation of weaker Si-Si bonds (226 kJ/mol) . In terms of the C-source precursor, branched and small hydrocarbons such as ethylene or propane are often used since they can produce high-quality SiC coatings and are available at high purities.