Based on the results presented here, we would suggest conducting experiments in which the thickness of a ZnTe tunnel barrier is varied between 6-16 atomic layers and the induced superconducting gap in the InAs is measured. This would deepen our understanding of the physical relations between interface phenomena and the emergence of MZMs. Using this insight to design devices with optimal interface configurations could lead to advances in MZM experiments. Metal-semiconductor interfaces are ubiquitous in many types of devices.