For ZSb01_3, ZAs02_3 and ZSb02_1 samples two signals: with g-factors close to 1.955 and complex signal with g-factor between 2.001 and 2.012 have been observed. Concentration of paramagnetic centers with g-factor close to 1.955 have been estimated as 5.9•10 19 spin/g, 3.2•10 19 spin/g, 5.4•10 19 spin/g, respectively. For Sb and As doped samples signal with g-factor close to 1.955 is more symmetric than in pristine ZnO sample likely due to lower electrical conductivity of these samples. Indeed no reduction of the quality factor of the resonator caused by insertion of these samples was observed at 130 K. Estimates of paramagnetic centers concentrations with g-factor close to 2.005 are 1.8•10 17 spin/g, 3.1•10 18 spin/g, 2.1•10 17 spin/g for ZSb01_3, ZAs02_3 and ZSb02_1 samples, correspondingly. EPR signals with g-factor between 2.001 and 2.012 were previously attributed to zinc vacancies and their complexes . Thus, EPR data points to the formation of zinc vacancies and their complexes in Sb-and As-doped ZnO. According to this interpretation doping of ZnO with As leads to more effective formation of zinc vacancies and their complexes than doping of ZnO with Sb at the same synthesis conditions. EPR data point to lower conductivity of doped samples compared to pristine ZnO. The decrease of conductivity could be explained by compensation of shallow donors by zinc vacancies and their complexes acting as acceptors.