We note that describing proximity-induced superconductivity at a semiconductor interface remains beyond the capabilities of current DFT methods, despite recent advances in predicting phonon-mediated superconductivity . Nevertheless, DFT offers valuable insights into interface properties, including the band alignment, the extent of band bending, and the penetration depth of metal-induced gap states (MIGS) into the semiconductor. We find that 16 atomic layers of either ZnTe or CdSe are sufficient to completely insulate the InAs from MIGS emanating from the Al. However, the two materials significantly differ in their band edge positions affecting their band alignment with InAs and Al. As a result, only ZnTe provides an effective barrier for electrons and therefore it would be the better candidate to pursue experimentally.