A comparison of the KPFM and Raman results shows that higher laser doses promote stronger interactions between the Eu-BDC film and graphene, leading to a decreased WF and a shift toward n-type doping. The ability to fine-tune the electronic properties of graphene/Eu-BDC heterostructures by controlling the fs-laser dose, ASD, and annealing conditions opens novel perspectives in 2DM electronic, optoelectronic, and sensor applications, where precise work function modulation is essential for optimizing device performance. Variations in ALD/MLD film thickness can also affect the built-in electric field generation in p-n junctions upon incident light illumination. Luminescent Properties of Graphene/Eu-Organic Heterostructures