The crystallographic phases of the films were characterized by a X-ray diffractometer (XRD) PANalytical X'pert Pro equipped with a Cu Kα X-ray source (λ = 1.54Å) in the θ-2θ mode. A Ni foil was used to filter the Kβ radiation. Film thickness was measured using the same PANalytical X'Pert Pro X-ray diffractometer in X-ray reflectivity (XRR) mode. The film thickness was obtained from the XRR data using X'Pert Reflectivity software and a two-layer model, In2O3/Si, to fit the data. The film morphology was analyzed by scanning electron microscopy (SEM) using a LEO 1550 scanning electron microscope with an acceleration energy of 2kV using the in-lens detector at a working distance of 3-6mm. SEM was also used to obtain film thickness on samples that were too thick or rough for XRR measurements. The composition and impurity levels of the deposited films were probed with high resolution X-ray photoelectron spectroscopy (XPS), Kratos AXIS Ultra DLD, equipped with an Ar (0.30 eV) sputtering source for 600 s, employing monochromatic Al Kα radiation (hν =1486.6 eV). Sputter-cleaning (sputter-etching) was undertaken to eliminate surface contamination, which resulted after exposure of the substrate to air.