By that strategy, the Nd 3+ -and Ho 3+ -activated GIGG crystal boules (Ø~6 mm) were successfully grown. As-grown rods were broken and examined under a microscope to identify single crystalline specimens. The identified single crystals were cut into wafers with 1 mm thickness perpendicular to the growth direction and polished on both faces (see Figure ) for further spectral measurements. Occasionally, internal cracking was observed, which may be attributed to thermal stress encountered during the crystal growth process. These cracks arise independent on the chosen dopant and its concentration, hence for future growth an afterheater is proposed. The single-crystal XRD measurements were conducted at ambient temperature to further verify the desired composition and crystal structure. ), ( ) and (hk0) planes of an as grown Gd3In2Ga3O12 Single Crystal