To demonstrate that we were forming tunneling junctions and not ohmic contacts, we measured the current density across SAMs (C4, C6, C8, C10) and showed that the tunnelling behavior across these junctions is dominated by the molecular structure, with the measured tunnelling decay coefficient β = 1.01 ± 0.04 n -1 in line with literature values. The junctions formed this way are robust and can withstand voltages of up to 5 V, corresponding to an electric breakdown field of approximately 50 MV cm -1 , compared to a typical breakdown field of ∼8 MV cm -1 in junctions with the same Au/SAM/EGaIn structure formed using the EGaIn cone-shaped tip method. Beyond molecular electronics, the manipulation of EGaIn using AFM have other potential applications, such as in nanowelding, 37 nanoelectronics, and electrical AFM mapping of thin films, where precise positional control of micro-/nano-scale liquid metal structures are required.