By constructing such weakly interacting TMDC/TPc heterostructures, the photoresponsivity and response time in phototransistors were improved compared to the pure TMDC components. Furthermore, TPcs could be used for defect engineering and the resulting enhancement of photoluminescence quantum yields. In this work, we seek to modify the type and concentration of charge carriers in n-type MoS2 by adsorption of cobalt-phthalocyanine (CoPc) and its perfluorinated derivative (CoPcF16). While the interface between TMDCs and other TPcs has been explored previously, the effect of the cobalt derivatives has not been studied so far. Moreover, this work contributes to the understanding of charge transfer processes and interface states in general which is still under investigation. Using synchrotron-based X-ray photoelectron spectroscopy (XPS), X-ray absorption spectroscopy (XAS), and angle-resolved photoemission spectroscopy (ArPES), complemented by ultra-violet photoelectron spectroscopy (UPS) and a laboratory-source XPS, we systematically examine the interface of these heterostructures. Our results indicate that it is possible to tune the properties of MoS2 merely by the choice of CoPc vs. CoPcF16. We find evidence for the formation of an induced gap state with CoPcF16, which is absent with CoPc.