The fabrication of the MIM metasurfaces was based on previously described standard lithography-based procedures : a 5 nm layer of Cr and 100-nm-thick layer of Au were deposited on silicon substrate. It was previously established that more than 10 nm of the underlying gold base-layer is sufficient for the optical properties that there is absorption at wavelengths longer than λ > 3 µm. Crystalline or amorphous inorganic glasses are dense and have low atomic numbers components, e.g., SiO 2 has SiO 4 -tetrahedron as a repeating unit. The SiO 2 as a dielectric layer in MIM is often studied, since it is inexpensive and easy to fabricate. However, good optical absorber/emitter properties can be obtained out of SiO 2 in the mid-IR up to wavelengths of about 6-8 µm. Importantly, we have also demonstrated that resonance of metasurface disappears as the wavelength approaches 10 µm. Therefore, it can be envisaged that by controlling coupling between absorption of SiO 2 at the molecular vibration band via MIM metasurface design, it is possible to realize a light source/emitter with high thermal stability in the mid-IR wavelength range.