In conclusion, we provided a first demonstration of the Si-based printed SBDs, where the Ag electrodes were formed by the printing of AgInk on the p-Si and sintering, and in-depth description of the electronic-energy state at the Ag/p-Si interface in the printed SBDs. For fabrication of the printed SBDs, monodispersed AgNPs stabilized with tetradecanoic acid were synthesized and used as the precursor for preparation of AgInk. Using the AgInk, the Ag electrodes were successfully fabricated by printing and sintering on the p-Si. The resulting SBDs showed typical I-V characteristics and relatively high rectification ratio compared with vacuum-deposited Ag electrode. From the numerical analyses of I-V data, the Schottky parameters were successfully estimated, in which the parameters showed sintering time dependent behavior. Especially, the Schottky barrier height is 0.14 eV higher in the sintering time of 30min compared with a vacuum-deposited SBD. To clarify the unprecedented electrical characteristics of the printed SBDs, observations of SEM and AFM/KPFM were conducted. From cross-sectional SEM observations, it was found that micrometer size of pores emerge at the Ag/p-Si interface due to the removal of the solvent and other organics in the AgInk. These morphological results strongly suggest that the increment of n and rs of the Schottky parameters are responsible for the interface deviates from the ideal contact by the emergence of pores, in which the fluency of electrons and holes should be hindered. On the other hand, from the EDX elemental mapping of the cross-section, there was no evidence of an oxide layer and/or an alloyed layer in the Ag/p-Si interface. Further investigations by AFM/KPFM observations in the