Fig. depicts the NW examples considered in this work, which have either hexagonal or triangular cross-sections (the latter has two different crystallographic orientations). While Fig. depicts a single GaN/AlGaN core-shell configuration for simplicity, HADOKEN can calculate electronic properties for core-multishell NWs with arbitrary cross-sections, numbers of concentric layers, and material compositions as well. We feature the hexagonal and triangular NW cross-sections in this work since these geometries/orientations have been experimentally observed and synthesized . For the single core-shell configuration depicted in Fig. , each NW is composed of an Al 0.3 Ga 0.7 N shell with uniform thickness, t, encompassing a GaN core of side length c (from simple geometry, the shell side length, s, is related to t and c via the expressions s = 2t/ √ 3 + c and s = 2 √ 3t + c for hexagonal and triangular cross-sections, respectively). For the hexagonal NW, the axis is aligned in the [0001]direction, and the cross-section is bounded by {10 10} planes. For each of the triangular NWs, the axis is aligned in the ]-direction, and the cross-section is bounded by two equivalent ( 110 1) and ( 1101) planes, and a (0001) plane. As shown in Fig. , the triangular NWs have two possible orientations of the (0001) plane-either in the [000 1]or [0001]-direction-which correspond to physically distinct configurations. In the scientific literature, the former is referred to as an N-terminated face and the latter a Ga-terminated face. The electronic parameters of the GaN core and Al 0.3 Ga 0.7 N shell are taken to be representative of their respective bulk system in the absence of defects, which has been verified experimentally . Specifically, the bandgap, electron affinity, isotropic effective mass, and dielectric constant used in this work for Al x Ga 1-x N are given by E g (x) = [3.42 + 2.86xx(1x)] eV, χ = [5.88 -0.7E g (x)] eV, m * (x) = (0.20 -0.12x)m 0 , and ε(x) = 9.28 -0.61x, respectively . The specific values for GaN (x = 0) and Al 0.3 Ga 0.7 N (x = 0.3) give rise to a Type I straddling gap heterojunction with conduction band discontinuity ∆E c = 0.5 eV, as shown in Fig. .