Overall, while we find relatively fast hole capture by neutral Se vacancies (s h ) which may act to impede hole-carrier mobilities, no fast electron capture transitions are witnessed for V Se . Thus no efficient electron-hole recombination cycles can be established for isolated Se vacancies, meaning they will not contribute significantly to non-radiative recombination in t-Se. Even if we assumed a high non-equilibrium vacancy population of 10 18 cm 3 in as-grown t-Se, the limit on carrier lifetime by V Se would still be as high as ⇠ 100 µs. Thus we conclude that intrinsic point defects in the bulk material do not limit the efficiencies of t-Se solar cells.