The C-rich NbCx thin films grown with NbF5 (at 350 ℃) contained 2 at% Al and 6 at% F, while those deposited with NbCl5 (at 300 ℃) had 8.3 at% Cl incorporation and no trace of Al 8 . On the other hand, the use of WCl5 with AlMe3 in the growth of WCx thin films (at 300 ℃) resulted in much lower amount of impurities (Cl: 1.3 at%, Al: below the detection limit) owing to the more readily reduced characteristic of WCl5 in comparison with other metal halides . In terms of the ALD SiC processes, disilane , chlorinated silane 5 or silane derivatives were used either alone as multicomponent precursor, e.g. diethysilane , or together with hydrocarbons, e.g. C2H2 and C2H4, to deposit poly-or monocrystalline SiC thin films. No detailed composition analysis was mentioned in these ALD SiC studies