We demonstrate the versatility of our approach by making molecular tunneling junctions that incorporate SAMs. There is much interest in using EGaIn as a top electrode in SAMbased molecular electronics because it is easy to implement and results in high yields of devices. To achieve different electronic properties with SAM, it is important to control the SAM-EGaIn interface with great precision. Yet, when using commonly accepted techniques such as the cone-shaped tip method, the resulting contact area is ill-defined (the effective electrical contact area is 10 4 -10 6 times smaller than the geometrical contact area). In contrast, our technique allows us to make tunneling junctions with defined contact areas of between 4 and 12 µm 2 in air, one to two orders of magnitude smaller than previous methods.