Table summarizes the as-fabricated sensor compositions and the applied DUV exposure times. A film of pristine GO, fabricated using the same amount of GO as in four LbL-SC cycles for GO/TNC composite films (10×25 µL), was illuminated for 2 h with DUV light for rGO formation and measured as reference (GO-R). To study the sensors' resistive responses to r.h., two films were placed into a test cell (volume: ∼20 mL), connected to a commercial gas calibration system, equipped with a ZG system to provide purified air (quality 5.0) and two humidification units to provide humidified ZG and humidified AG. The sensors were operated at a constant bias voltage of 1 V, and the resulting currents were measured. Purified air with a baseline humidity of ∼37% r.h. (at room temperature) was used as ZG to simulate the typical lower r.h. level of indoor air. The sensors were transiently exposed to increasing r.h. (∼45-55-65-75-85%, and back) for 4 min, followed by exposure to ZG for 8 min. A commercial gas-and humidity sensor inside the test cell was used as a reference sensor. The data can be found in the Supporting Information, Section S9. The relative conductance change ∆G/G 0 , defined by Equation , was extracted as sensor signal from the recorded I(t) traces, with