The domains in M2S are more connected than in M1S. We hypothesize that this is due to a greater degree of polymer grafting, and therefore a larger quantity of PG(B-r-C) to uptake AlOx during SIS compared to M1S. The grafting of the polymer registers the substrate and brings the chemical guiding pattern closer to a 1:1 density multiplication, which allows for self-healing of the DSA defects. However, based on the SEM images, it is difficult to quantify the degree of polymer grafting to the substrate and the subsequent guiding pattern. Figure shows tracking of the film thickness (blue, left y-axis) and WCA (right, y-axis) on the unpatterned region, i.e., the PS-OH monolayer, to re-create the wetting behavior of the PS-OH chemical guiding stripes. The thickness follows similar trends to that of the unguided fingerprint patterns, where there is a slight increase in film thickness for the subsequent monolayers (from substrate to 28PS, M1, and M2). The WCA also follows the same cyclical trend as the unguided patterns between that of the modified PS-OH substrate at 90° to that of the perpendicularly oriented BCP film at 75°. While there is a slight decrease in WCA of the PS-OH monolayer after application of the non-preferential random brush, 28PS, (from 90° to 88°), the WCA does not decrease to the value of the pristine non-preferential random brush (75° taken from Figure ), indicating that the PS-OH guiding stripes retain their PS wetting affinity, which agrees with previous experimental results on the PS-b-PMMA system. There is a continuous decrease in WCA for each monolayer as additional BCP is grafted to the substrate. The molecular weight of the BCP is greater than two times that of the PS-OH brush and creates an inhomogeneous surface upon grafting, leading to a decrease in WCA to 86° from the pristine PS value. However, the PS guide stripes retain their preferential PS wetting behavior as F1 and F2 show island features similar to those observed in Figure (see Supporting Information). To the best of our knowledge, this is the first report of a self-healing mechanism where no additional components, such as homopolymer brushes, are added to the BCP film. Here, the BCP serves as the ink and grafts to the substrate and is spatially organized by the self-assembly of the BCP film. Figure shows the results of the self-healing DSA on the chemical pre-patterns comprising only PS-brush stripes alternating with an untreated native Si oxide background (Figure ). Figure shows SEM images of the BCP film, F1, rinsed monolayer, M1, and stained monolayer, M1S, during the first round of DSA. Unlike the unguided BCP films on the Si substrates (Figure ), the BCP forms perpendicular lamellar structures on top of the Si background regions due to the PS-OH guide stripes anchoring the PS domains of the BCP while the Si background regions remain preferential for the PG(B-r-C) block. This demonstrates that self-brushing in conjunction with selfassembly can be used to engineer the interfacial energy of chemical patterns to induce perpendicular lamellar orientation without the use of non-preferential substrates. F1 is highly defective, similar to what was observed with the non-preferential guiding patterns. While there is some degree of alignment, there are many disclination defects that propagate through the film.