In the proposed mechanism, we assume that the Si-pulse will be the primary step that contributes to the overall growth per cycle (GPC). This assumption is supported by the significant increase in GPC with elongated Si-pulse at a fixed C-pulse as shown in Figure , where the GPC is plotted against the durations of both C-pulse (with a fixed Si-pulse of 3 s) and Si-pulse (with a fixed C-pulse of 3 s). One can notice that with a fixed C-pulse of 3 s the GPC increases with increasing duration of the Si-pulse. In contrast, a fixed Si-pulse of 3 s results in a Si layer with a GPC of 7 nm/cycle without the C-pulse (C-pulse of 0 s).