When the dopants with similar charge carriers are used for multiple heteroatom doping, then it has been found that they possess promising electrochemical properties due to the similar electronic configuration. Besides, the hydrogen bonding between the nitrogen and sulphur atoms are observed to improve the doping level and enhance the pseudocapacitance property . The function of both nitrogen and sulphur in N, S co-doped graphene is that the nitrogen is essential for improving the capacitance by faradaic reactions with ions of the electrolyte whereas the sulphur not only impart the faradaic reactions but also enhances the conductivity and the pore structure . It has been reported in the literature that the N, S co-doped graphene nanoribbon has achieved the capacitance which is appreciably higher compared to individual N and S-doped graphene that might be attributed to the fact that the enhanced surface area and combined pseudocapacitive behavior by both dopants such as nitrogen and sulphur in N, S co-doped graphene compared to individual one . The change in the shift of fermi level is associated with nature of dopants in co-doped graphene. For instance, the fermi level is shifted towards the conduction band for N, S co-doped graphene while the fermi level is shifted towards the valence band for N-doped graphene . It has been found that the capacitive performance of N, P co-doped graphene was improved by introducing the faradaic reactions by doped nitrogen and phosphorus carrying oxygen atoms through the simultaneous doping of phosphorous and nitrogen . Additionally, the wettability as well as the porous nature of the N, P co-doped graphene was enhanced by P=O functionalities. The preference in the doping over the graphene framework is purely dependent on the nature of dopant. For instance, the doping of nitrogen preferentially happens at the edge of vacancies in defective graphene nanosheets whereas the doping of fluorine is found to occur at the oxygen containing groups in the basal plane of the graphene . Hence, the various properties responsible for the electrochemical energy storage performance is schematically depicted in Basically, CVD techniques are adopted to synthesize defect-free, continuous single or fewlayered graphene films. In a CVD process, the deposition of a thin film of carbon materials on the substrate are obtained by introducing a mixed-gas sources (e.g., CH4, and H2) into a vacuum chamber.