To model the photoinduced excitation process, multi-state force-fields may be connected to surface-hopping approaches that implement transition probabilities based on QM calculations. In a QM/MM fashion, the underlying QM system is often limited to the photoswitch molecule, whereas embedding effects (solvent, local aggregates etc.) are efficiently described by MM approaches. On the other hand, once the electronic state has changed we may investigate photoswitch relaxation from straight-forward MD simulation using the S0/S1/... -specific MM force-fields. This enables the investigation of geometry changes from Newtons dynamics rather than imposing minimum energy pathways. Moreover, the interplay with the embedding environment is assessed from explicit atomic movement of the nearby molecules.