In this study, for the first time, fabrication of the SBD on p-type Si (p-Si) by printing method was achieved using Ag nanoink (AgInk) as shown in Figure . Firstly, the synthesis of Ag nanoparticles (AgNPs) were successfully demonstrated, in which AgNPs were designed in order to be dispersed in organic solvents, and transformed into metallic film when sintering. Next, AgInk was made from the lab-made AgNPs, solvents and a resin, in which the composition of AgInk was adjusted for patterning by squeegee method. After sintering at 300 °C, the obtained metallic Ag film showed low sheet resistance enough to work as electrode. When the Ag electrode was patterned onto p-Si using AgInk, the obtained device was found to show typical SBD characteristics from I-V measurements. When analyzing I-V characteristics of the SBDs using Schottky diode model, the unprecedented high SBH values were found compared with a reference of a vacuum-deposited Ag electrode. To elucidate the mechanism of high SBH, scanning electron microscopy and scanning probe microscopy were employed to investigate the morphological structures and surface potential at the interface between printed Ag and p-Si (Ag/p-Si interface).