The shape of ω-scan curves of the InN follow those of their 4H-SiC substrates (see supporting information, Fig. ), indicating that the inherent "mis-orientations of SiC" are duplicated by the InN films. A comparable full-width-half-maximum (FWHM) for InN (0002) and 4H-SiC (0004) suggests that no significant screw-type threading dislocation is generated during the growth of InN. Despite the pronounced broadening of the InN (0002) peak in 2θ-ω scan, the FWHM of InN (0002) in the ω-scan is the same even when the InN film thickness is less than 5 nm. The degree of InN stacking coherence is determined by the underlying 4H-SiC (0001) substrate.