Pairing InAs with CdSe leads to an opposite band alignment to ZnTe, as shown in Panel (c). The InAs/CdSe interface is also type-I, but with the bottom of the InAs and CdSe conduction bands aligning to produce a CBO of zero. We find a VBO of 0.425 eV. States penetrate from the valence band of the InAs into the gap of the CdSe and decay within 14 atomic layers. In this case, geometry relaxation qualitatively changed the band alignment.