The energy profiles, Fig. , shows that the adsorption path for NH3 follow a similar path with a net lowering of the free energy after ligand NH2 substitution, indicating that the adsorption process is thermodynamically favorable on both surfaces, and that both Ga and In prefers to bond with NH2 compared to CH3. At ALD temperatures, 500-700 K, the net free energy is almost independent of changes in temperature, due to only a small change entropy during the adsorption. However, for adsorption on InN, the energies are shifted upwards compared to on GaN, showing that the process is less favorable on InN. The energies are shifted higher when the initial carbon-metal bond is broken, suggesting that the methyl termination is more strongly bound to InN compared to GaN and that the preference to bind with NH2 instead of CH3 is much lower for In.