Miniaturization of electronic components has increased the demand for precise and improved thin film deposition methods. For example, deposition only on desired areas would avoid the need for patterning and etching steps and allow for bottom-up fabrication of nano scaled structures. This has motivated research into area selective deposition (ASD) by chemical vapor deposition (CVD) techniques. The selectivity in ASD is usually achieved by changing the surface chemistry of either the area where film growth is desired or not desired to control the adsorption of precursor molecules to only specific areas on the substrate.