Similarly to BEC, multiple initial attempts to obtain novel zeolitic structures using the ADOR strategy failed for IWW germanosilicate. For IWW with approx. Si/Ge ≥ 5, the framework was found to retain 3D connectivity and crystallinity, undergoing only limited degermanation accompanied by the creation of defects. This resistance to delamination was associated with the presence of Si-rich D4R units. For higher Ge content (Si/Ge ≈ 3-4) IWW underwent more significant structural changes, leading to the generation of a narrowly-distributed mesoporosity (peaked at approx. 3 nm) that remained even after subsequent calcination treatment, which resulted in regeneration of almost purely siliceous IWW. Also, the partially hydrolyzed intermediate could not be swelled by the surfactant, indicating that the IWW layers in the hydrolyzed intermediate are still connected via the Si-O bridges. Only the subsequent work of Kasneryk et al. using the acidic vapour-phase-transport approach managed to succeed in generating a new zeolite topology (IPC-18 with IWW layers connected by S4R units only) from the IWW parent zeolite. But even in this work, a significant structural rearrangement including the IWW layer as well as its significant distortion are reported. The herein observed large asymmetry in D4R unit occupation by germanium (Figure ), i.e., the retention of almost purely siliceous D4Rs in IWW, as well as phase-separation of germanium into Ge-rich and Ge-poor rods/planes perpendicular to the IWW layers, and a sizable germanium population in the T sites within the IWW layers, may serve as possible explanations for the experimental difficulties in IWW delamination (due to Si-rich D4Rs), the narrowly-distributed mesoporosity (due to leaching of Ge-rich rods/planes), and the reportedly very large rearrangement/distortion of the IWW layers (due to sizable Ge population in the layers). However, Liu et al. claim, based on the PXRD refinement for IWW with Si/Ge = 4.3, that almost all germanium is located in the D4Rs, amounting to approx. 4.5 Ge per D4R unit on average, which is approximately 1.5-2 more Ge atoms than predicted by us (Figure ). While some underestimation of D4R population is possible (see also the discussion above for the BEC case), e.g., due to the role of OSDA, we would expect that such a high content of Ge atoms in D4R units should allow for the IWW delamination, which is not observed experimentally, unless the Si/Ge ratio drops to as low as 1 .