The characteristic peaks in Figure (d) at 35.62°, 60.03°, and 71.84° correspond to the SiC (Cubic crystal system, Space group F4 # 3m (216), Lattice: Face-centered, Cell parameter: a = 0.44 nm) and diffracted from (111), (220), and (311) lattice planes of SiC crystal, respectively. These findings align with the reference PDF no. (75-0254). Additionally, based on our previous work, it has been established that the peak at ≈22° is ascribed to the formation of SiO2 at high temperatures . The XRD spectra of the synthesized supported materials are shown in Figure ).