It is interesting that similar compounds with inverted bands exhibit diverse Fermi surface geometries, some with a single pocket centered at each L-point and others with multiple carrier pockets surrounding each L-point. It is therefore clear from the electronic structure calculations that band inversion does not necessarily induce high valley degeneracy. Rather, we show in the next section that the degree to which the bands are inverted is a contributing factor to high valley degeneracy for materials with inverted bands.