Indeed, this method is presumed a convenient method to synthesize heteroatom doped graphene using carbon-based candidate in gaseous phase as the starting material along with heteroatom precursor in variety of phases such as solid, liquid and gas under high temperature CVD is a general technique to synthesize carbon-based materials in which the liquid metal function as the catalytic sites for the adsorption as well as the desorption of gaseous precursors. When the N-based precursor is incorporated in the growth, then nitrogen atoms will also absorb and then penetrate into the graphitic skeleton . Moreover, the rate of heating of the supported catalyst plays a vital role in the formation of doped graphene. The catalyst film prone to aggregate if the temperature is high. Aggregation of the catalyst could be avoided by fast heating prior to the growth of N-doped graphene . However, for slow heating, the catalyst film prefers to aggregate before commencing the growth of N-doped graphene. Hence it leads to the formation of nanotubes or cages instead of graphene. Further, Wei et al. was the one who reported the experimental synthesis of N-doped graphene with CH4 and NH3 as the precursors of C and N via CVD technique for the first time, respectively . The few layered N-doped graphene obtained at 800 °C attained a high N level of 8.9 at% where graphitic nitrogen is predominantly formed. However, the N-doped graphene synthesized at 1000 °C exhibits predominantly pyridinic N along with a small fraction of pyrrolic N . Selectivity in the N-doping over graphene was accomplished by CVD technique. For instance, the pyridinic N-doped graphene was successfully grown over Cu foil by CVD method using pyridine as the both carbon and nitrogen source in another report . Similarly, the pyridinic and pyrrolic N-doped graphene was prepared with CVD method using acetonitrile as the only source . Heteroatom-containing polymers can be explicitly vapor-deposited over the metal catalyst for graphene growth and in situ doping. Pyrrole monomers vapored over the Cu substrate were polymerized by the influence of Cu 2+ ions accompanied by CVD growth and the finally prepared N-doped few-layered graphene has 3.14 at.% N with dominating pyrrolic N chiefly from the polypyrrole precursor . Precursors with different nitrogen bearing functionalities were employed for the formation of N-doped graphene using CVD technique.