Figure shows the calculated total density of states (TDOS) using the supercell approach and CPA implemented in VASP and SPRKKR codes. The CPA enables the analysis of mixed occupancy of crystallographic positions without needing a fully ordered supercell model, effectively representing the statistically disordered crystal structure. In the energy range from -2.0 to 0.0 eV the increasing bandwidth from -1.8 eV to -2.0 eV and shifting of the low energy peak (around -5 eV) can therefore be attributed to the disorder effect in terms of the impact of either atomic randomness or partial order of different atoms at same site. In contrast, the electronic structure around the Fermi level is similar (more detailed description and atomic coordinates of the ordered model in chapter 10).