HT screening single crystal experiments were performed at the Shanghai Synchrotron Radiation Facility at the Beamline BL10U2 (E = 18 KeV, λ = 0.6887 Å) for fast structure determination. The temperature was controlled using an Oxford Cryostream800, and a temperature of 100 K was normally used for the HT single crystal screening experiments. Samples can be mounted using an in-house-developed sample changer (swordfish). It takes approximately 20 s to remove a crystal sample from the goniometer and replace it with a new one in the storage Dewar which has the capacity of storing 320 samples (20 pucks) at a time. Data collection was carried out by using an in-house developed data collection software (Finback) with a user-friendly interface for convenient operation. Dataset collection triggers automated indexing, full integration, and scaling within the automated data processing pipeline integrating the commonly used protein crystallographic software Aquarium . The data processing module Porpoise integrates the CCP4 , XDS , DIALS , and SHELX 67 packages. To accurate characterization of crystal structures after initial HT screening single crystal experiments, we also collected full data on 16 crystals on a Bruker D8 Venture Photon III diffractometer using Ga Kα (λ = 1.34138 Å) X-ray source. Data reduction was performed using Bruker Apex4. The structures were solved using XT program within the Olex2 69 by Intrinsic Phasing Method and refined by the full-matrix least-squares method against F 2 using ShelXL program within the Olex2. All non-hydrogen atoms were refined anisotropically and the positions of all hydrogen atoms were generated geometrically. Laboratory powder X-ray diffraction data were collected in reflection mode on a Bruker D8 Advance General Area Detector Diffraction System (GADDS) using Cu Kα radiation. All datasets were recorded over a 2θ range of 5°-50°using a step size 0.01°. Data collection and Crystallographic information on the crystals and recorded PXRD patterns were reported in the Supplementary Information Section 11.