Different methods have been reported to enable ASD. Self-assembled monolayers of organic molecules are often used to block areas of the surface where no film growth is desired. Film nucleation can also be inhibited on certain areas on the surface by surface passivation using ion implantation of fluorocarbons or by poisoning the surface by inhibitors such as fluorine, hydrogen or ammonia. ASD can also be achieved by utilizing different film growth rate or nucleation rates on different materials on the substrate. This approach can be further enhanced by adding etching steps to the deposition process. We recently reported a new CVD method for deposition of metallic films where the free electrons in a plasma are used as reducing agents. Since the method draws an electron current from the plasma to an electrically biased substrate, a conducting surface is needed to close the electric circuit allowing the electron current to flow from the plasma discharge to the bias power supply without any charge build-up. Therefore, metallic films could be deposited on electrically conducting silver substrates, whilst the deposition process was hampered on poorly conductive silicon and inactive on insulating silicon dioxide substrates. Here, we show how this inherent surface selectivity can be used to afford an area selective deposition of metallic thin films on only areas of a substrate surface that are electrically conducting.