In initial experiments, we found that copper films can be deposited using a continuous e-CVD process using Cu(hfac)2. However, the resulting films exhibited high porosity (Fig. ) along with significant carbon and fluorine contamination, as show in Fig. . High-resolution XPS analysis of Cu 2p, F1s and O1s in the deposited films was also carried out, which revealed similar chemical environments across all samples (Fig. ). From previous e-CVD studies, we note that an e-CVD process where the supplies of metal precursor and plasma electrons to the surface are sequential improves the film density. We therefore explored different pulsing schemes for time-resolved e-CVD processes using Cu(hfac)2. Fig. . shows the QCM frequency shift per deposition cycle as a function of time for the copper precursor pulse, the plasma electron pulse, and the purge time between the pulses. The curves in Fig. suggest that a saturation in film deposition per cycle is reached for precursor and plasma pulses longer than 5 s, and purge times exceeding 20 s. Since such saturation curves are used to demonstrate a self-limiting surface chemistry in ALD processes, we interpret Fig. as a self-limiting surface chemistry in the e-CVD process, suggesting that the process can be described as an e-ALD process. and plasma exposure times were both held constant at 5 s.