For investigation of the increment of qB in a series of printed SBDs, in this section, we have quantified the magnitude of the surface topography and the surface potential at the Ag/p-Si interface by performing atomic force microscopy (AFM) measurements together with Kelvin probe force microscopy (KPFM). The experimental setup is shown in Figure , where a sample is placed on the piezo-stage and scanned by a conductive AFM probe (PtSi) attached on the tip of the cantilever. The probe approaches to a sample and then scans along the sample surface while keeping the oscillating force on the probe constant, resulting in a topographic image of the surface. Additionally, using KPFM, the surface potential image and the topographic data can be obtained simultaneously at every measuring point. When the probe is held close to the sample surface, the force acting on the probe consists of the electrostatic force caused by the contact potential difference (CPD) between the probe and the sample as shown in Figure . To observe the topographic and potential images at the Ag/p-Si interface, the preparation of experimental samples is well designed as shown in Figure . All experiments were conducted under ambient condition.