to 800 o C with the ramp rate of 10 o C/min (Fig. ). Higher carbon contents can provide higher electrical conductivity and more conductive pathways. The determined carbon contents of Si-SiOx@C, Si-SiOx@C-1.25, Si-SiOx@C-2.5 and Si-SiOx@C-5 are 13.5%, 19.5%, 17.8% and 17.4% with a decomposition temperature at about 500 o C. Higher CNT content didn't significantly increase carbon content. Si-SiOx@C-1.25 exhibits the highest carbon content, which means the CNT skeleton can affect the reaction between raw materials in some degree. The N2 adsorption-desorption testing results (Fig. )