A novel device concept, based on colloidal QDs sensitized graphene field-effect transistors (FETs), simultaneously provides high spectral sensitivities and potentially reduced overall detector costs, by combining low-cost fabrication with patterning techniques such as stamp transfer, and nanoprinting. These phototransistors do not require bump bonding and can readily be integrated into silicon-based read-out electronics. High sensitivities have been reported for room-temperature operation of PbS QD/graphene FETs with a spectral sensitivity determined by the QD size resulting in a spectral cutoff between 1000-1600 nm. While expanding the spectral range towards shorter wavelength has been demonstrated by employing QD materials such as ZnO for UV, and perovskite QDs or CdSe QDs for visible light detection, it has remained challenging to extend the spectral sensitivity to longer wavelengths, namely the short-and midwavelength-IR spectral range. For this task, HgTe QDs, with their tunable spectral sensitivity from shortwavelength into terahertz range, are among the most suitable candidate materials. Photoconductors and photodiodes relying on graphene electrodes have been demonstrated with responsivities in the low mAW -1 range. Higher responsivities of 10 5 AW -1 were reached with phototransistors based on HgTe QDs and MoS2