Additionally, thermal ALD with TMG and NH3 requires deposition temperatures of 400 C, which is relatively high for an ALD process. Similar issues has been reported for ALD of GaN using TEG, were impurities of C and O was the primary issue. . ALD routes using GaCl and GaCl3 together with NH3 deposited at high temperature (400 C) have also been investigated, but render films with Cl impurities. The disadvantage of TMG and TEG for ALD of GaN is their strong M-C bonds, which makes it difficult to remove all of their ligands from the deposited precursor at low temperatures. Amides (M-NR2) have more reactive and desirable M-N bonds, which would improve the surface chemistry during the NH3 precursor pulse. Herein, we report low temperature deposition of GaN using tris(dimethylamido)gallium(III), (Ga(N(CH3)2)3 1, with NH3 plasma by ALD. Precursor 1 has been previously used for ALD of Ga2O3 and Ga2S3 and CVD of GaN , but not for ALD of GaN. Notably, all previous reports using 1 has resulted in amorphous films at all deposition temperatures. We show that 1 displayed self-limiting behaviour in a temperature range from 130-250  C on Si(100). Deposition of GaN on 4H-SiC(0001) rendered epitaxial films with near stochiometric composition and very low impurity levels of carbon and oxygen. To the best of our knowledge, this is the first report of GaN grown epitaxially directly on SiC substrate.