A complete procedure for how the annealing of a thin film of BCP on an oxide-capped Si chip using the controlled solvent vapor flow annealing system has been previously described. The initial film thickness (in nm) and target swelling degree (SD = swollen film thickness/initial film thickness) were entered into the program controlling the solvent annealing system. The dwell time was 300 s, and ramp speed was 0.3 SD/min, for all samples. It was ensured that the bubbler had enough solvent (THF) before commencing the annealing program, and 20 SCCM (standard cubic centimeter per minute) of Ar was bubbled into the solvent bubbler along with another pure Ar mixer to adjust the value automatically. The program automatically stopped solvent vapor flow at the end of the annealing, and the BCP film was deswelled by purging the annealing chamber with pure Ar.