Lower film thicknesses (e.g., below 100 nm) were measured by X-ray reflectivity (XRR) with the software PANalytical X'Pert reflectivity and a two-layer model to fit the data and calculate the film thickness. Crystallinity was measured in both θ-2θ and grazing incidence X-ray diffraction (GIXRD) geometries using a PANalytical EMPYREAN MRD diffractometer with a Cu X-ray tube, wavelength of 1.54 Å, operating at 45 kV and 40 mA. Optical emission spectroscopy (OES) utilized the Mechelle 900 Spectrometer with a cooled digital 12-bit SensiCam CCD camera system, covering a wavelength range from ultraviolet (UV) to near infrared (NIR), i.e., 200-1100 nm. Positioned perpendicular to the plasma source, the spectrometer captured light emitted from the NH3 plasma, directing it to a monochromator through an optical fiber cable. Measurements were conducted immediately after the ICP source in the gas flow direction, before reaching the substrate which is located approximately 65 cm further down. Data analysis considered the spectrometer's consistent spectral resolution of 900, enabling the resolution of wavelengths separated by 1/900 of the wavelength.