To the authors' knowledge, there have not been experimental investigations into the effects of deposition angle on the surface structure of inert-gas matrices for the purposes of matrix-isolation. We therefore turn to the literature on the deposition dynamics of thin films, previously investigated via MD simulations, Monte Carlo (MC) simulations, and experiments. These published studies have revealed that changing the incident angle of deposition (at a constant incident energy) can have various effects on the formed thin film, altering such properties as the surface morphology, density, and sticking probability. Mes-adi et al. showed using MD simulations that the OAD of Cu atoms exceeding 60° from the normal of a Si surface, can produce more voids and vacancies in a thin film, leading to rougher surface morphology than when deposited from 0° to 45°, which generates a more uniform and smooth surface. This is corroborated by Zhu et al., using a MC-MD coupling method to show that the surface morphology was almost flat when Cu atoms were deposited with incident angles less than 45°. Based on these two model studies depicting the growth of an atomic species deposited onto a flat surface, in combination with earlier simulations by Cruz and Lopez that used classical MD simulations to depict the slow-deposition of Ar at 10 K, we do not expect significant differences in the surface morphologies of the atomic matrices in this study (Ar and Xe) when the deposition angle is changed.