To date, the best reported lifetime of homojunction-free Si-photoanodes with ABPE above 3% is around 50 hours . Recent research explored the use of additional protective layers to shield Si from dissolving . However, these approaches degrade the device's efficiency ABPE to below 1%, which is impractical for real-world applications. Implementing large scalable photoanodes possessing enhanced efficiency and stability defines the current challenge, representing a significant research opportunity to bring this technology to the next level.