Variability in Raman peaks was observed within the channels; therefore, median values were used as representative values to visualize Raman variations across the array. Figure (a) presents the ωG-ω2D plot, indicating differences among the GFETs. The nH values for each GFET were We investigated the relationships between nH and the FET feature values of VDP IDS,min, gmh, and gme to demonstrate that Raman analysis can effectively assess GFETs' electrical transport