Highly-doped SCEs are significantly simpler to simulate as they are modelled through DFT alone by using "pseudoatoms" which carry fractional nuclear charges in specially constructed pseudopotentials. . This construction allows for the study of surface and polaronic states, doping, band bending, the SCR, and approach to bulk of highly doped SCEs using DFT alone and with minimum implementation efforts or increases in computational cost. Notably for electrochemistry and controlling the electrode potential, the pseudo-atom approach allows shifting the bulk Fermi level continuously even within the band gap and can be combined with either an implicit or explicit electrolyte model.