As a model system for semiconductor electrodes, we used 4-8 layer anatase (101) TiO 2 slabs. We show the results only for the 4-layer model but the results obtained with 6 and 8-layer models were quantitatively and qualitatively similar. To ensure a robust description of the electronic structure, the PBE+U functional with a self-consistently computed U=4.5eV affecting Ti d-orbitals was utilized. A 5 × 5 × 1 k-point mesh was used. Note, that this simple semiconductor model is chosen to demonstrate the application of CIP on semiconductor electrodes. For more realistic calculations of semiconductor electrodes also defects, structural deformations etc. should be considered.