To fabricate the coplanar waveguide (CPW), we employed a bilayer lift-off process. This technique involved using a LOR10B resist along with a conventional positive resist to create metallic film patterns up to 1 µm thick through an undercut approach. The coplanar devices were composed of a 150 nm thick evaporated gold (Au) layer supported by a 5 nm thick chromium (Cr) adhesive layer. Figure ) schematically illustrate the cross-section of the coplanar waveguide. The CPW design features a three-conductor strip on the dielectric layer, typically in a ground-signal-ground (GSG) configuration. The central strip was connected to the applied signal, and the adjacent electrodes were grounded. The width of the signal electrode (W) was approximately 90 µm, with a 48 µm gap (S) between it and the ground electrodes with a PM6:Y7 film thickness of 500 nm. Measurements were carried out using a 150 µm pad probe station (MPI TS150-THz) and an Anritsu VectorStar Vector Network Analyzer (VNA).