Another direction in the field of infrared focal-plane arrays heads towards the implementation of multicolor pixels, where each pixel can differentiate between multiple IR wavelengths enabling better object identification. Two-color IR detectors have been realized for HgCdTe thin films and HgTe QDs, in vertically stacked photodiode configuration. However, the path to a larger number of detected colors is faced with much more complex fabrication. In this regard, relatively simple processing of QD/graphene FETs by thin-film QD patterning through a local deposition of QDs by means of nanoprinting, or stamp transfer offers potential for multicolor detector arrays, where each pixel may consist of multiple colorsensitive sub-pixels. For example, a three-color detector array has been demonstrated with QD-based photoconductors by dividing each pixel into sub-pixels. These detectors operated at room temperature with rather inferior specific detectivity in the MWIR, relied on large detector width-to-length ratios and required moderate drain bias. While NIR and SWIR detectors perform well at room temperature, this operational temperature is intrinsically problematic for a spectral range beyond 3 µm and cooling of the detector is required. Therefore, future multicolor IR photodetectors with spectral sensitivity in the MWIR will require NIR and SWIR detectors to operate at the same reduced temperature as MWIR detectors. This calls for extensive investigations into the low-temperature characteristics of current NIR and SWIR detectors.