For excitons confined within semiconductor nanostructures there are different non-radiative escape mechanisms. Escape can occur via the loss of the exciton, uncorrelated electronhole pairs or single charge carriers. Each alters the effective activation energy which is accounted for by the fitting factor. Sullivan & Cole used Equation 69 to examine quantum rings, and found that the qualitative behaviour of quantum rings is well describes by the thermal emission of excitons whilst quantum dots emit uncorrelated electron-hole pairs. The interplay of the radiative and non-radiative rates of exciton loss was vital in explaining the observed behaviour. At low temperatures, the charge carriers primarily reside in their grounds states that can radiatively recombine. Thus, in the low temperature regime, radiative recombination dominates. However, this rate decline as temperature increases due to the increased thermal energy available to the charge carriers allowing them to reach dark states that do not permit radiative recombination. As temperature continues to rise and charge carriers have access to even more thermal energy, it becomes possible for emission into the wetting layer. Thus a steady increase in the non-radiative rate as a function of temperature is observed. The total exciton loss rate is the sum of these two rates and, for a particular quantum ring geometry (Figure ), it can be seen that not until temperature surpasses 200 K does the non-radiative rate become the dominant source of loss in the system.