The growth of InN is problematic due to its low thermal stability; InN decomposes to In metal and nitrogen gas at about 550 °C. This has also been manifested by its high equilibrium pressure with nitrogen, which has led to attempts at depositing InN at very high nitrogen pressures. Due to slow decomposition kinetics of ammonia (NH3), the most common nitrogen precursor in chemical vapor deposition (CVD), N/In ratios in the order of >10 has often been used in CVD of InN. Alternative N precursors, such as dimethylhydrazine and tertiarybuthylhydrazine, has been shown ineffective for the growth of InN. To allow more reactive N species, plasma-assisted approach has been adapted in various growth techniques, such as molecule beam epitaxy, sputtering and metalorganic CVD for the growth of InN.