Fabrication of Scottky barrier diode was performed in two steps. Before all steps, for removing SiO2 layer, the p-Si was immersed in aqueous hydrogen fluoride solution (2 wt%) for 1 min, rinsed with deionized water, and then dried with an air blower. First, on a side of the p-Si, deposition of aluminum (Al) as an ohmic electrode was performed using an evaporation system (ULVAC, VPC-260F, pressure 2×10 -3 Pa, current 28 A, evaporation time 3 min). After deposition of Al, for making ohmic contacts possible in the Al/p-Si interface, the p-Si after deposition was placed in an oven and annealed at 500 °C for 7 min. Next, on the other side, AgInk was patterned by squeegee method which is one of printing methods. In this method, on the p-Si, a pit (size: 0.15×0.15 cm 2 ) was constructed from 0.100 mm thick masking tape (Nitto Denko Corporation, N-300). A small amount of AgInk was placed onto the pit and then excess amount of AgInk was removed with a metal blade. After drying on a hot plate at 60 °C for 5 min, the masking tape was peeled away, achieving a smooth thin layer was formed. The patterned p-Si was then placed in an oven at 300 °C and sintered for the desired time (5, 7.5, 10, 15, and 30 min).