As in other anisotropic polycrystalline materials, the physical and chemical properties of SiC coatings are dependent on the growth orientation of the crystals, which is the result of competition between different growth planes. In the 3C-SiC system, (111) and (220) planes were reported to exhibit the lowest surface energies , meaning that under regular circumstances the SiC crystals would growth favorably in both <111> and <110> directions.