AlxTi1-xN has only three entries in the Atomic Limits database 29 , all for semiconductor-related applications, and all using supercycles. Xiang et al successfully developed thermal processes with trimethyl aluminum (TMA), TiCl₄ and NH₃ as precursors. The presence of NH₃ in the reaction led to the formation of AlTiN(C) films, while its absence resulted in AlTiC films, suitable for metal gates and low power FinFET applications. The deposition modes in that study included multiple precursor pulses and purges, which are characteristic of the supercycle method. Furthermore, supercycles consisting of two groups of subcycles dedicated to TiN and AlN, using TMA, tetrakis(dimethylamido)titanium(IV) (TDMAT) and N2 plasma were applied by Yun et al , resulting in stoichiometric AlTiN, suitable for applications where both electrical performance and durability against corrosion are critical. In the third study, Juppo et al , deposited (Al)TiN using TMA, TiCl₄ and NH₃, focusing on the role of TMA as a reducing agent. The highest growth rates were achieved using a supercycle pulsing scheme, where NH₃ is pulsed after both TiCl₄ and TMA, forming films with good barrier properties usable in preventing interdiffusion between copper and silicon.