The film deposition was carried out using a hot-wall Picosun R-200 Advanced ALD reactor, equipped with a Litmas remote inductively coupled plasma (ICP) source with a substrate holder located approximately 75 cm downstream from the plasma source, at an operating pressure of approximately 5 hPa. The TEG was maintained in a stainless-steel bubbler at room temperature. N2 (99.999%) was used as purge gas for the deposition system and as a carrier gas for the TEG precursor, while Ar (99.9997%) was used as the carrier gas for H2 (99.999 %) and NH3 (AGA/Linde, 99.999 %) precursor delivery. The N2, Ar, NH3, and H2 gases were further purified by getter filters. To study the deposited film after the experiments, a sample Si (100) piece (1.5×1.5 cm) was loaded in the reaction chamber and kept at the deposition temperature for 120 min before starting the growth process. It should be noted that the surface area of the chamber walls is much higher than that of the Si piece, and the measured reaction products mainly emanate from the chamber walls.