Next, we carefully studied the effects of beam energy and dose on the e-beam chemistry process. Analysis of the changes in the functional form of the various Raman peaks and their ratios showed that 1) we have a high degree of control over the defect engineering process in terms of tuning the strain and doping level of the graphene layer, 2) these parameters are related to fundamental changes in the structural and electronic properties of the graphene, and 3) changing the beam energy changes the evolution of the Raman profiles with dose, strongly suggesting that we can tune the functionalization through the beam energy. Fig. shows the evolution of the Raman peak frequencies (w) and peak widths (FWHM, G) as functions of dose for the D, G, D', and 2D peaks of patterned graphene. These experiments were performed at a constant acceleration voltage (1 kV). Note that in order to vary the dose, we had to simultaneously vary Ibeam, P and td. From the data in Fig. , it is evident that increasing the dose simultaneously affected several different peak frequencies. For example, the D peak exhibited a slight but clear monotonic blueshift with increasing e-beam dose (Fig. ). Similarly, the G peak exhibited the same trend, though greater in magnitude (Fig. ). In contrast, the D' and 2D peaks redshifted initially with increasing e-beam dosage. After an inflection point occurring between 4000-5000 µC/cm 2 , these peak frequencies then blueshifted, with the 2D peak exhibiting the greater magnitude in shift (Figs. and). For peak widths G, all Raman peaks broadened with increasing dose, again up to an inflection point at ~4000-5000 µC/cm 2 .