This study successfully demonstrates the potential of vanadium pentoxide (V2O5) as a costeffective and efficient hole transport material for non-toxic, tin-based perovskite solar cells. The proposed cell structure, incorporating V2O5 as the HTM, CsSnI3 as the absorber, and WS2 as the electron transport material (ETM), achieved significant performance improvements through systematic simulation and optimization. Initially, the unoptimized cell showed a power conversion efficiency (PCE) of 22.68%, with a short-circuit current density (Jsc) of 35.29 mA/cm² and an open-circuit voltage (Voc) of 0.86 V. However, performance was hindered by conduction band offset (CBO) and valence band offset (VBO) at layer interfaces, which caused charge recombination and reduced efficiency.