To design a functional spinristor, one may employ known molecular memristors and tune them to sustain spin-filtering properties. Thus far known molecular devices with memristive properties can be classified under three main groups: (1) organic molecules which undergo bond breaking/forming processes, (2) transition metal complexes (TMCs) whose conductivity changes upon spin-crossover or redox processes, and (3) endohedral fullerenes. While the relevant organic systems have a closed-shell electronic structure that rules out spin filtering properties, the TMCs can, hypothetically, enable spin-filtering properties, if the transition metals in their ground electronic state have an open-shell electronic structure. However, to the best of our knowledge, the spin-filtering properties for experimentally studied TMC memristors have neither been reported experimentally nor theoretically. The endohedral metallofullerenes seem to offer the functionalities needed for molecular spinristors. Our idea of a molecular spinristor consists of a transition metal ion enclosed in a fullerene cage, here C70-D5h (1), that is connected to four electrodes, Fig. . The primary function of the proposed spinristor is spin-filtering when a low potential between source and drain electrodes, VSD, is applied, Figs. 1ab. The spin-filtering arises from the spinpolarized electronic structure of the M@C70, vide infra. When the VSD and the gate voltage, VG, increase up to a certain threshold, the enclosed metal atom relocates to a different position Fig. and, in an electric-field-driven switching process. This leads to a change in the overall conductivity of the system akin to a memristor, but, in the spinristor, also the spinfiltering ratio changes. Overall, the proposed system will function as a switching spin-filter or a spin-filtering memristor, shortly spinristor.