The MS relation shows that even the SCR capacitance alone is complicated as the charge within the SCR (q SCR ) depends on the dopant concentration (n b ), dielectric constant (ϵ), temperature T , and the electrode potential U in units of eV . The MS model is based on a simple bandbending scenario without considering surface or polaronic states , which leads to deviations from this ideal behavior. Surface states can significantly impact the capacitance at SCE interfaces, particularly in systems with high surface state concentrations, and thereby introduce additional capacitive contributions (C SS ):