To evaluate the performance of Si and InGaAs PIN photodiodes in an experimental setup, we incorporated the photodiodes at the camera port of an inverse fluorescence microscope with LED excitation (intensity in focus 0.25 W/cm²). To obtain the photosignal, we directly measured the occurring photocurrent using a picoamperometer. (6,5)-enriched SWCNTs with various DNA-based surface chemistries were used in increasing concentrations from 0.05 to 1 nM. For both photodiodes, a linear relation between the SWCNT concentration and the photocurrent was observed (Figure ). As indicated in the previous simulation, the SWCNT fluorescence shows a low photon flux, which resulted in small calculated photocurrents in the nA range (Figure ). Specifically, 200k excitation photons are required to detect one emission photon of the SWCNTs at the photodiode. At an emission wavelength of 990 nm, the simulation predicted a photocurrent density of 46 nA/mm² for Si and 49 nA/mm² for InGaAs. Experimental results corroborated these findings, with photodiodes exhibiting photocurrent densities in the range of nA/mm². At a SWCNT concentration of 1 nM, Si PIN photodiode exhibited a photocurrent density in the range of 30 pA/mm² -40 pA/mm², while the InGaAs PIN photodiode showed a higher value of 50 pA/mm² -65 pA/mm² (Figure ).