The atomically-sharp interface between 4H-SiC and InN is seen in the HR-STEM lattice resolved micrograph in Fig. . The corresponding Fast Fourier transform (FFT) diffractograms (inset in Figure ) prove that the AB-type (2H) stacking of InN and the ABAC-type (4H) stacking of 4H-SiC substrate are well-aligned along the [0001] and [011 ̅ 0] direction, confirming the hetero-epitaxy. According to our FFT diffractogram, the lattice mismatch between InN and SiC substrate is 14.7% along [112 ̅ 0] (a-direction), in good agreement with that derived from reported values for relaxed InN 20 and 4H-SiC substrate. Owing to the large lattice mismatch, the strain relaxation is expected to take place at very early stage of InN growth.