Static disorder in thin films has a structural or positional origin. This can be quantified, for instance, by the degree of paracrystallinity, , defined as (with the standard deviation and the mean value for the interchain separation). measures the magnitude of the cumulative disorder originating from statistical variations in intermolecular distances and has been shown to be the key factor controlling charge transport and electrical conductivity in heavily doped conjugated polymer semiconductors . We have run non-adiabatic molecular dynamics simulations on stacks of increasing cumulative positional disorder, with values ranging from 1% to 25%, where the variation in interchain distances modifies the long-range excitonic couplings. Much to our surprise, remains almost unaffected (see Figure ), within numerical error, by the degree of paracrystallinity, pointing to the fact that, irrespective of the mechanism at play, it is extremely resilient to static disorder.