Hydrogen plasma removal of SU-8 was done in an Oxford Instruments PlasmaLab-80 Plus reactive ion etch machine (RIE) with 300 W ICP power and 100 W radiofrecuency power on a chilled sample plate at 0 • C with a hydrogen flow rate of 30 SCCM. Before sample introduction the vacuum chamber was conditioned by igniting the plasma with the addition of 5 SCCM of nitrogen, but only pure hydrogen was used after the sample was introduced in the vacuum chamber. The plasma was ignited at 90 mbar and then the pressure was lowered to 30 mbar. A sample polarization (DC bias) of 264 V was measured. The resulting attack rate was 2 nm/s. Although this attack rate is enough for thin SU-8 layers, Fig. illustrates the need for a wet chemical reaction for removal, as some parts of the sample geometry make it difficult remove the polymer with hydrogen ICP RIE. In this case, silver wires that have been electrodeposited using the SU-8 photoresist as a mask are shadowing some parts of the polymer, slowing the ICP RIE attack rate in certain areas. As shown below, the hydrogen ICP RIE technique is also useful to remove surface residues left after wet chemical attack of thick and highly polymerized SU-8 layers.