Exploring the scalability of the process was imperative to validate applicability in the market, and as such, large cathodes were prepared on aluminum foil current collector using identical processes as shown in Figure . The following figures (Figures ) present mechanical testing such as twisting and rolling, which had no residual effects on the prepared cathodes, further cementing the promise of the technology. To study the distribution of sulfur within the carbon matrix, Transmission Electron Microscopy (TEM) coupled with Energy-Dispersive X-ray Spectroscopy (EDS) was employed. The analysis began with the preparation of a sample, involving the extraction of a lamella from the surface of the prepared sulfurgraphene cathode using Focused Ion Beam (FIB). Figure showcases the resulting lamella, which was thinned to under 100 nm via a Ga-ion beam. To shed light on the elemental composition of the lamella, EDS maps of the corresponding elements was created as shown in Figure and, revealing the uniform distribution of carbon and sulfur elements, respectively, in which a perfect overlap between the two is exhibited. The lack of detectable domains of sulfur points to the fine distribution of highly dispersed sulfur molecular moieties within the carbonaceous matrix, which is further supported by the lack of crystallinity (shown via the FFT pattern in Figure ), as well as by higher magnification images and EDS analyses showcased in Figure through 2h, in which the uniform distribution is further demonstrated. This hints to the complete encapsulation of the sulfur molecular species content in the cathode by the graphenic carbon matrix, which has been vastly reported as an excellent inhibition method for the dissolution of polysulfides species in the electrolyte, further corroborating the efficacy of the cathode synthesis method. The resulting cathode surface was further analyzed using Raman spectroscopy, to verify the presence of sulfur and characterize the carbon species formed on the current collector, and is displayed in Figure . The Raman spectra revealed two prominent peaks located between 1340 cm -1 and 1582 cm -1 , corresponding to the D and G bands, respectively, and a peak at 478.52 cm -1 indicating the presence of sulfur. The observed D band is attributed to the presence of defects and amorphous-like domains in the carbon network, while the G band is indicative of the degree of graphitization. The ratio of the intensity of the D and G bands (ID/IG) reflects the level of structural defects within the carbon material, with increasing ratios indicating a greater degree of defects. Analysis of the ID/IG ratio for the present sample revealed a value of 0.859, indicative of graphene growth with high amount of grain boundaries and significant structural defects. This can be explained by the high temperatures caused by the laser irradiation-induced graphene formation, as well as the high sulfur content molecularly dissolved in the resulting S/C matrix.