In conclusion, we have developed an ML model capable of predicting atom-specific ground-state PDOS of Si atom from the corresponding Si-K ELNES/XANES. This demonstration has shown the feasibility of predicting PDOS for both the valence and conduction bands, including both sand p-orbitals in the ground state of silicon atoms, from the Si-K edge, which is traditionally thought to reflect the conduction PDOS of p-orbitals in the excited state. We discovered that the information within the energy region of the Si-K edge varies, with the area near the rising edge being particularly effective for predicting p-orbitals of the conduction band, which is believed to be directly correlated with the Si-K edge. Additionally, the energy region just beyond the rising edge was proved to be effective for predicting the s-and p-orbitals of the valence band in the ground state. This region is considered to contain the information related to the hybridization of sand p-orbitals, suggesting that ML models can capture such complex correlations.