Comparing the transfer characteristics of OFETs prepared with the three studied indolizine derivatives (Figures and), it is clear that devices based on I6 and I9 exhibit quite similar behavior. Based on the dependence of the square root of the source-drain current on the gate voltage (Figures and), charge carrier mobilities for both holes and electrons were calculated (Table ). The obtained values for hole mobility range from 0.21 to 0.49 cm² V⁻¹ s⁻¹, while electron mobilities range from 0.11 to 0.29 cm² V⁻¹ s⁻¹. These mobility values are comparable to those reported for current small-molecule organic semiconductors, suggesting that indoloindolizine derivatives are suitable candidates for application in electronic devices. Interestingly, for both I6 and I9, the hole mobility is higher than the electron mobility, with the electron mobility being identical for both compounds. The hole mobility for I6 is the highest among the studied compounds. In contrast, the device based on I8a shows nearly identical hole and electron mobilities. This may stem from variations in charge trapping among the studied compounds. The hole trapping effect, as inferred from the threshold voltage variation, is similar for all three compounds, while electron trapping is less pronounced for I8a than for the other two compounds, thus less affecting the overall electron mobility in this compound. Notably, the HOMO and LUMO energy levels for I8a, as determined from electrochemical experiments, are less negative compared to the other two compounds, which affects electron and hole formation.