As a first step, we confirmed that our photoconductor can detect UV light that is absorbed directly by the SnS2 matrix. Indeed, we observed a clear increase in the current when 395 nm light (~60 mW/cm 2 ) was incident on the substrate (Figure ). Next, we substituted the 395 nm light for a 980 nm laser light source (~300 mW/cm 2 ) and successfully detected an increase in current upon irradiation (Figure ). While the photocurrent was weaker than that induced by 395 nm light, the response can be improved by increasing the film thickness and quality, optimizing the UCNP loading percent, and engineering a better overlap between the emission of the UCNP and absorption of the semiconducting matrix. This proof-of-concept device demonstrates a viable path for using semiconducting ligands and matrices to electronically interface with UCNPs within an optoelectronic device.