In recent years, transition metal chalcogenides have gained growing interest due to their topological characteristics and intriguing physical properties, such as topologically insulating behavior and band inversion. For example, the HgTe/CdTe system was proposed to host a strain-engineered quantum spin Hall (QSH) effect, which has since been experimentally realized. Similarly, topological band inversion and gap opening were observed in a narrow gap semiconductor, WTe 2 . Other materials, such as MoTe 2 , showed strain-induced topological transitions from semimetals to to topological insulators. The versatility of these materials makes them promising for spintronic and electronic applications.