However, RuCp2 has a endothermic reaction for the elimination of Cp ligands on both H:Si(100) and NHx-Si(100). The H:SiNx/Si(100) substrate is built by allowing N migration into the underlying Si substrate and is H-terminated. Ligand elimination on this substrate via H transfer is not favoured. Our results show that the reactivity of Cp ligand elimination on a series of Si surfaces is highly dependent on the substrate terminations, which explains why the reported incubation period and GPC vary from report to report. We propose that a pre-treatment with N2/H2 plasma to yield an NHx-terminated Si surface can reduce the incubation time and promote faster deposition of metal films. This termination-dependent reactive may also be used for selective deposition or inhibition of film deposition.