Having identified CBP as a viable host, we next proceeded to fabricate solution-processed OLEDs (SP-OLEDs) with 4DMAC-TPPQ and 4PXZ-TPPQ; further, recognizing the AIE properties of these emitters, we also explored SP-OLEDs using neat films of both emitters. We employed a bottom-emitting OLED . The EL spectra mirror the corresponding PL spectra. The λEL of the SP-OLEDs with 4DMAC-TPPQ ranged from 640 to 670 nm for the 10 and 50 wt% doped film in CBP EMLs, while the neat film SP-OLEDs emitted at lEL of 683 nm. As expected, the SP-OLEDs with 4PXZ-TPPQ emitted further into the NIR, with lEL of 686 nm (5 wt% in CBP), 735 nm (50 wt% in CBP), and 780 nm (for neat film devices) Table . Of the devices fabricated with 4DMAC-TPPQ, the highest EQEmax was achieved with 10 wt% doping at 3.9%; the efficiency decreased to 1.9% at 100 cd/m 2 . The 50 wt% and neat film devices generally exhibited relatively low EQE, with EQEmax of 0.8 and 0.3%, respectively (Table ). The EQEmax for the device with 5 wt% 4PXZ-TPPQ in CBP was 1.7%; the EQEmax was 0.3% for the 50 wt% doped device and 0.04% for the neat film OLEDs, values that are consistent with their lower FPL. For comparison, we fabricated vacuum-deposited devices (V-OLEDs) with 5 wt% 4PXZ-TPPQ in CBP, using the device structure shown in Figure and Table . Notably, the V-OLED performance improved, reflected in the higher EQEmax of 3.2% at λEL at 681 nm, a similar EL spectrum to that observed for the 5 wt% SP-OLEDs. The fabrication of V-OLEDs was not possible for 4DMAC-TPPQ because its molecular weight was too high. The turn-on voltages for the SP-OLEDs range from 4.0 to 5.2 V, while that for the V-OLED is decreased at 3.8 V.