Normally, small nitrogen containing starting materials such as aliphatic amines or nitriles susceptible to form high quality nitrogen-doped graphene without additional hydrogen in the gas phase by CVD method. Moreover, nitrogen-based precursor having C-N multiple bonds (e.g., acetonitrile and pyridine) lead to higher nitrogen contents than aliphatic amines . In another work, the N-doped graphene having nitrogen content of 3.72 at. % was prepared via CVD at 1000 °C for 20 minutes using urea and methane as the precursors of nitrogen and at low (230-300 °C) and at high (400-600 °C) temperatures, respectively. Likewise, Feng et al. reported the N-doped graphene by CVD method using ammonia and methane as the gaseous sources, respectively . They also discussed that both the growth time and the growth temperature have played a vital role in the formation of controlled N-doping. N-doping was found to be more successful when pyridine was employed compared to doping using the mixture of N2/NH3 . Single layer N-doped graphene was obtained using pyridine along with minimum quantities of methane whereas the multi-layer N-doped graphene was obtained by pyridine alone. The B, N co-doped graphene was prepared using methane and ammoniaborane as the precursors of carbon and nitrogen along with boron, respectively . When the doping level is high, then the B/N ratio is also high, usually 1. On the other hand, the B, N co-doped graphene having the low B/N ratio also reported with the help of precursors such as boric acid and N2 .