Fig. and Fig. show that the TDMAA and NH3 surface reactions are self-limiting, suggesting that reactions should produce atomic layer controlled growth of AlN films. The strong increase in growth per cycle (GPC) at temperatures above the temperature window for both plasma and thermal processes indicates that the deposition in those temperature regions is governed by a decomposition chemistry with a significant gas phase component, i.e., decomposition of the TDMAA precursor. TDMAA is a dialkylamide precursor and since the thermal stability of dialkylamides is generally limited, substrate temperatures must be kept below the decomposition temperature . For TDMAA, the decomposition temperature is at least 250 °C, if we consider data points outside of the temperature window where 'CVD-like' growth starts to occur (Fig. and Fig. ). The growth rate of the AlN films was slightly above 1 Å/cycle for the plasma process and approximately 0.8 Å/cycle for the thermal process. Fig. ) shows that the thermal process, just like the plasma process, has a low temperature window which is, however, slightly narrower. The linear trend lines show that no incubation cycles are required before nucleation begins from ALD cycles versus film thickness in both processes (Fig. and Fig. ). The fact that the fitted curve intersects the thickness axis above the origin suggests that the TDMAA based processes have substrate-enhanced growth. This can occur if the number of reactive sites on the substrate is higher than on the ALD grown film. The GPC is then high at the very start of the deposition.