Electronic transport properties were calculated using the amset package, which solves the linearised Boltzmann transport equation under the relaxation time approximation. Unlike the constant relaxation time approach, amset explicitly calculates band and k-dependent relaxation times using scattering matrix elements obtained from first principles inputs. Accordingly, amset can provide fundamental insights into the strength of scattering processes that limit charge transport, and has demonstrated excellent agreement with experimental measurements of mobility in a range of semiconductors. In the present work, we have included scattering due to polar optical phonons (POP), acoustic deformation potentials (ADP), and ionised impurities (IMP). We have not included piezoelectric scattering as ZnSb 2 O 6 is centrosymmetric (4/mmm point group symmetry) and therefore does not display piezoelectricity. The primary input for amset was a hQSGW band structure calculation on a relatively dense 7 × 7 × 4 k-point mesh. To calculate wave function overlaps, we used the wave function coefficients from a PBE0 calculation on the same k-point mesh, performed using VASP.