Finally, we construct a band energy diagram for the ML-MoS2 electrode using the following assumptions. First, we interpolate 𝑛-dependent Eg values from first-principles-based effective-mass model calculations (see ESI Fig. ). Second, we pin the conduction band edge of ML-MoS2 at 4.2 V vs the vacuum scale (or -0.3 V vs NHE) and assume BGR only shifts the valence band, in agreement with time and angle-resolved photoelectron spectroscopy (TR-ARPES) measurements . Therefore, we position the VB edge relative to the fixed CB edge using the 𝑛-dependent Eg values. Fig. shows the resulting band energy diagrams of ML-MoS2 as a function of applied voltage using 𝑛-dependent Eg values interpolated from Gao et al. Note, we constructed two energy level diagrams using n values obtained from the MND and WM models. At positive potentials, Eg approaches the value predicted for "undoped" ML-MoS2 (see Fig. inset). Eg decreases with increasingly negative E, causing the VB minimum to shift by over 200 meV over a narrow E range. The Eg decrease (and upward VB shift) is greater for larger values of 𝑛, such as those predicted by the WM model (see red circles in Fig. ). Fig. shows an additional band energy diagram using experimental Eg values obtained from TR-ARPES measurements ; the quantitative values differ slightly, but the qualitative trends hold. The key point of Fig. is that BGR effects cause significant band edge movement (0.2-0.5 eV) and should be given consideration when designing 2D electrodes for electrochemical applications, as will be discussed more below. Importantly, the majority of the BGR shown here occurs over a remarkably narrow range of applied potentials.