In the initial phase of electroless copper deposition, the average number of TDCs grows as the deposition time increases, with nucleation being the dominant activity. Subsequently, the average TDC density peaks and then starts to decline. During this period of declining TDC density, coalescence becomes the primary mechanism for building the crystal structure. A seamless electroless film is created through the side-by-side expansion and merging of TDCs. The physical qualities of the deposit are influenced by the kind of coalescence. Two forms of TDC coalescence exist: the first, where coalescence occurs without fully occupying the space between TDCs, can lead to impurities, stress, voids, and dislocations; and the second, where the space between TDCs is filled, results in higher-quality copper compared to the first type. The manner of coalescence is largely influenced by the type and concentration of additives in the solution. Additionally, the quality of the underlying substrate may affect nucleation and coalescence behavior. In our process, it is likely that improvements in the quality of the printed Ni layer should be investigated in future studies to determine to what extent the quality of the Ni layer affects the nucleation and coalescence of the TDCs. It is likely that pinholes, topographic roughness, and local metal composition may affect these processes.