The Si and interface capacitances do not vary significantly when transforming from the Voight to Maxwell EC. This is because, again shown in Figure , the capacitances obtained using the Voight circuit are separated by approximately three orders of magnitude. Therefore, the equations 1 and 2 above collapse to 𝐶 !,#$ = 𝐶 %,#$ and 𝐶 !,$&'()*+,( = 𝐶 %,$&'()*+,( . For this reason, the flat-band potential and doping density of Si can be extracted using Mott-Schottky analysis regardless of the EC used. This is why the EC did not need to be resolved in previous reports, as it did not interfere with extracting these key parameters regarding the emerging semiconductors being studied. The capacitance, C, is used in Mott-Schottky analysis through the equation: