Doping is an effective strategy for modifying physical and electronic properties by generating benign defects, improving conductivity, regulating crystallization, and suppressing surface or grain boundary defects. Various types of dopants including Na, Fe, 10 K, Te, S, , Bi, and Cu, have been extensively explored to improve the solar cell and PEC performance of Sb2Se3 photocathodes. For example, Te doping in Sb2Se3 solar cells, prepared through spincoating, has been shown to effectively suppress deep-level defects by regulating the atomic ratio of Se/Sb. The Ding group successfully mitigated surface defects and enhanced conductivity in Sb2Se3 through KOH etching treatment, resulting in a notable increase in the power conversion efficiency (PCE) of Sb2Se3 solar cells from 4.8% to 7.16%. Theoretical modeling has suggested that Sn, acting as an extrinsic substitution (SnSb), could improve the ptype conductivity of Sb2Se3. Recently, Liang et al. prepared Sn-doped Sb2Se3 solar cells by sputtering a Sn-doped Sb2Se3 target, suggesting enhanced p-type conductivity. In addition, Hobos et. al. confirmed that Sn as a dopant enhances the p-type conductivity of Sb2Se3 using the Hall effect and hot-probe measurements.