Night vision and passive imaging of thermal sources require IR light detection with a spectral sensitivity up to 10 µm, while IR spectroscopy of gases and molecules require a spectral sensitivity ideally covering 2-15 µm. For these applications, highly sensitive, but costly, detectors are presently used; in particular, epitaxially grown narrow bandgap semiconductors such as HgCdTe and InGaAs alloys. For camera applications, the detector material is commonly grown on a separate substrate and later integrated into silicon-based read-out electronics by bump bonding, which is challenging for pixel pitches below 10 µm as it requires high assembling accuracy and low surface roughness. Furthermore, a thermal expansion coefficient mismatch between some materials and the read-out electronics induces strain in the bump bonds resulting in a low reliability upon repetitive cryogenic cooling, the cooling is generally being required for photodetectors with spectral sensitivities beyond a wavelength of 3 µm. Therefore, bump bonding is a complex technical process, which increases the overall camera fabrication costs impeding the use in emerging applications such as in self-driving vehicles. Other emerging technologies such as micro-spectrometer and multi-color (hyperspectral) IR cameras can be used for environmental monitoring, detection of hazardous gases, and for increased object identification making use of material specific spectral absorption, however, patterning of the IR active material is required. In multi-color cameras, each pixel can distinguish between multiple IR colors and first demonstrations of this include two-color photodetectors based on stacked HgTe epitaxial thin films, HgTe QD thin films, or hybrid HgTe QDs on silicon. However, the integration of additional colors into these devices drastically increases the fabrication complexity. Alternatively, multi-color IR cameras can be fabricated by dividing each pixel into color-sensitive sub-pixels requiring microfabrication and patterning techniques.