Existing approaches and measurement techniques for quantifying interfacial energetics of bulk semiconductors cannot be directly applied to ultrathin 2D electrode materials. Hankin and co-workers discussed and compared popular methods: (1) Mott-Schottky (MS) analysis of differential capacitance versus potential data, (2) Gärtner-Butler (GB) analysis of photocurrent-potential data, and (3) determination of the transition potential between anodic and cathodic photocurrents under chopped illumination. Each method involves key assumptions to extract band edge positions. Those assumptions often fail even for bulk single crystal electrode materials and likely fail for 2D electrode materials as the material thickness becomes much thinner than the charge carrier depletion region thickness. For example, MS and GB analyses assume the applied potential manifests as a potential drop within the semiconductor's depletion region while the band edges remain fixed. As discussed above, large band edge movement is inherent to 2D semiconductor electrodes. The transition potential method between cathodic and anodic photocurrents interprets the transition potential as the flatband condition, where the band bending in the semiconductor is zero. Interpreting this potential as the flatband condition is problematic for 2D semiconductors because they have large (500 meV) exciton binding energies, and it is unclear how much additional electric field strength (i.e., applied potential) is required to overcome the binding energy and induce current flow near the zero-field condition. Another complicating factor is the exciton binding energies renormalize upon applying a potential to the 2D semiconductor. Extracting the electronic band gap (Eg) with optical measurements alone is problematic because we cannot assume the optical band gap and Eg renormalize equivalently in an electrolyte environment. Another practical experimental challenge for MS measurements is making defect-free 2D semiconductor/substrate contacts so the underlying metallic substrate does not contribute to the capacitance measurement. In summary, the methods for quantifying interfacial energetics of bulk semiconductor/electrolyte interfaces will most likely not be valid for 2D semiconductor electrodes.