The sensing devices were also tested in the presence of the reducing gases CO and H2. Signal detection was only identified in the presence of H2 when operated at the temperatures of 200, 250, and 300 °C, as shown in Fig. . The sensors were found to exhibit a non-fully reversible adsorption/desorption process at 250 °C and for the Sn(S0.5Se0.5)2 system at 300 °C, for all concentrations, as observed in Fig. ). In this case, the adsorption is dominant since the Rair baseline resistance decreases as the concentration of a reducing gas increases in a n-type semiconductor, even at high temperatures. At 200 °C, signal was only observed for the Sn(S0.5Se0.5)2 and SnSe2 samples, while SnS2 system did not present any measurable response, as observed in Fig. ). Although the results are satisfactory, especially operating at 250 °C and 300 °C, the use of these sensors for H2 detection may be impractical, since the operation under continuous oxygen flow at temperatures higher than 160 °C may drive a phase transition to SnOx, drastically diminishing its lifetime . Currently several strategies have been adopted to improve the performance of sensor devices. Among these, increasing the surface-volume ratio and the use of heterostructures are the most widely ones. In this context, SnS2 microflowers decorated with MoS2 nanospheres , SnS2 films decorated with graphene oxide ,