In order to evaluate the effect of cooling rate and temperature difference on the growth kinetics and yield of CNTs, we first performed experiments in ARES TM , an automated high throughput laser-induced cold-wall CVD system. ARES employs arrays of silicon micropillars (10 µm in diameter and height, thermally isolated on a SiO2 underlayer) as the growth substrate, with a 6W 532 nm continuous wavelength laser serving as the heat source and the excitation source for collecting in situ Raman spectra. In the past ARES has provided insights into chiralangle dependent growth rates and defects in CNTs, optimal phase spaces for CNT growth, new alloy catalyst compositions for CNT growth and defect evolution in two-dimensional materials. We performed in situ CNT growth experiments in ARES on a 0.3 nm-thick Co catalyst film, deposited on to the micropillar substrates using magnetron sputtering on a 10 nm-thick alumina diffusion barrier (deposited using atomic layer deposition). By controlling the ARES laser and sample stage position with micron-precision, we were able to heat each micropillar rapidly to the growth temperature (680-1000 ºC) and to hold the target temperature for the duration of the experiment. The CVD growth was done at a total pressure of 5 torr, with 100 mTorr acetylene as the carbon source, and the balance provided by ultra-high purity helium. Under these conditions, we have shown previously that we grow single-walled CNTs in the form of bundled mats. During each growth experiment, Raman spectra were acquired continuously every 3s and the onset and subsequent increase in CNT growth was monitored by the increase in intensity of the CNT Raman peaks. The main peak of interest in the CNT Raman spectrum is the G band, which corresponds to in-plane vibrations of the sp 2 carbon atoms tangential to the tube axis. The increase in area of the G band can thus be calculated for each spectrum and results in a growth curve. In ARES, the growth temperature is controlled by the laser power and the temperature is estimated from the Raman frequency shift of the Si micropillar (further details can be found in the Experimental Methods section). For the non-isothermal growth experiments, the laser power (and hence temperature) was reduced manually -from the initial to the final temperature-over varying time intervals.