The process of area-selective ALD/MLD growth of Europium-1,4-benzene dicarboxylate (Eu-BDC) on graphene is illustrated in Figure . To overcome the inertness of the graphene surface on SiO2 and increase the selectivity of the deposition in the target areas, we utilized our recently developed TPO method via fs-laser irradiation in an ambient atmosphere. Following the successful functionalization of selected 2x2 um 2 areas with oxygen-containing groups, we deposited 3-20 nm Eu-BDC films on the 18 graphene chips using ALD/MLD (Table ). We used Eu(thd)3 and BDC as precursor molecules and varied the number of ALD/MLD cycles and temperature to achieve the desired thickness (see experimental section in SI for details). The choice of Eu-BDC thin films was made as this is a well-studied ALD/MLD process, where the growth is well controlled. For graphene transfer, we used two different polymers: PMMA and PVAc. All the ALD/MLD films were amorphous, as deduced from grazing incidence X-ray diffraction measurements on Si. Figure . Scheme of the experiment, including TPO of graphene and AS-ALD/MLD deposition of Eu-BDC thin films in predefined areas.