Film deposition. 3C-SiC coatings were deposited on isostatic graphite substrates (100 mm x 60 mm x 1.5 mm) via a horizontal hot-wall chemical vapor deposition (CVD) reactor using silicon tetrachloride (SiCl4) and either methane (CH4) or toluene (C7H8). The liquid SiCl4 and C7H8 were stored in stainless steel bubblers placed in a water bath whose temperature was maintained at 24.3 ℃ by a thermostat. The corresponding vapor pressure of SiCl4 and C7H8 at this temperature is 30.7 kPa and 3.6 kPa, respectively. Hydrogen, purified by Ag-Pd alloy membranes, was utilized both as a diluting and carrier gas, directing the precursors from the bubblers to the reaction chamber. During the deposition, the substrate was situated in an inductively heated SiC-coated graphite susceptor. The temperature control within the reactor was realized by an optical pyrometer which measures the temperature through a view port.