We found a temperature interval of 245 -315 °C where the GPC is constant with the temperature when using a 5 s pulse of 1 and 4 s pulse of H2O (Fig. ). This is higher than the 150 -275 °C reported for 1, again suggesting a slow surface kinetics for 1. A stop flow mode was used to allow for a lower deposition temperature of In2O3 using 1, whilst we employed a multiple-pulse approach using 1 for depositing InN by ALD. The higher temperature interval found for ALD of In2O3 using 1 in our ALD reactor suggest that the temperature window obtained for 4 could possibly also be lowered by using stop flow mode in the ALD process. What perhaps speaks against this is that ALD of InN using 4 did not require the multiple pulse approach used for ALD of InN using 1.