In continuous CVD processes, deposition of InN requires higher temperatures than in ALD (Figs. and). The growth of InN by continuous CVD is suggested to depend on gas-phase reactions initiated from the adducts formed by mixing TMI and NH3. Interestingly, pulsed flow of TMI into a continuous flow of NH3 and a pulses of TMI and NH3 with slight overlap have been reported to deposit good quality continuous InN films when the thickness exceeded 75 nm. Separating TMI and NH3 was concluded advantageous for InN deposition in these studies. The separation of TMI and NH3 should reduce the formation of adducts in the gas-phase and change the deposition chemistry. Consequently, we suggest that purge time is an important parameter which modulates reaction mechanism its dynamics and strongly influences the deposited InN quality.