They are (i) destruction of the symmetry of the graphene lattice and (ii) modulation of the electronic structure. Significantly, the same heteroatom which contains different bonding types can exhibit distinct properties. For instance, the n-type semiconducting behavior is observed in graphitic N as each graphitic N subsidizes 0.5 electrons to the Π electron system of the graphene network. On the other hand, both pyrrolic and pyridinic N are obtained at defect sites which experience p-type semiconducting property by attracting electrons from the graphene skeleton . Therefore, the semiconducting property of N-doped graphene is determined by the nature of doped nitrogen atoms. the N-doped graphene having highly concentrated graphitic N prepared by CVD graphene with n-type semiconducting property along with carrier mobility of 200-450 cm 2 V -1 s -1 . In another study, shown the transformation from the p-type to n-type having enhanced N-doping level eventhough both pyridinic and pyrrolic types are highly concentrated. Sodi et al. theoretically demonstrated that functionalities at edges experience a meager impact over the band structure of graphene which is contradictory to the doping at the basal plane .