Figure shows the hole mobility calculated with AMSET at low and high carrier concentrations. The mobility is split by scattering mechanism, and the total mobility is plotted as the reciprocal sum of each component (via Matthiessen's rule). At a carrier concentration of 1 × 10 16 cm -3 (Figure ), scattering from polar optical phonons (POP) is predicted to dominate the hole mobility, yielding a total room temperature hole mobility of 41.3 cm 2 V -1 s -1 . Scattering from acoustic deformation potentials (ADP), piezoelectric effects (PIE) and ionised impurities (IMP) is essentially negligible at low concentrations compared to POP scattering. The piezoelectric constant calculated from DFPT is in excellent agreement with experiment (0.10 C m -2 against 0.13 C m -2 ) and confirms that PIE scattering does not compromise the mobility despite the centrosymmetric inversion native to the zincblende crystal structure.