The calculated current versus bias voltage characteristics of TMM deposited 6ZGNRH are shown in Figure . The current under the bias voltage (V b ) depends on the transmission spectra within the bias window (in the energy range (-V b /2, V b /2) around the Fermi level). For pristine 6ZGNRH, the spin-up and spin-down currents degenerate and increase uniformly after a bias voltage of 0.60V (See Figure ). Since the DQI dips in the transmission spectra of TMM deposited 6ZGNRH are energetically separated, one spin current can be significantly suppressed as compared to the opposite spin current using the appropriate bias voltage. In contrast to the pristine 6ZGNRH, spin-up, and spin-down currents are non-degenerate in TMM adsorbed 6ZGHNRH. In T6ZN-G4, the spin-down current decreases significantly at 1.0V bias voltage as compared to the spin-up current as shown in Figure . This decrease in spin- down current is characterized by the local minima in transmission with the increase in bias voltage (See Supporting Information, Figure ). Thus the TMM adsorbed 6ZGNRH can result in spin-polarized current in ZGNRs. The calculated spin-filtering efficiency at zero bias (using eq 4) is 3.27%, 0.00%, 0.30%, and 59.90% for T6ZN-G1, T6ZN-G2, T6ZN-G3, and T6ZN-G4 respectively. Although SF E at zero bias gives an appropriate idea about the spin-filtering efficiency of the device, eq 4 is an approximation that is valid under the low-bias regime only. Thus we have calculated the SF E at different applied bias voltages using eq 5. In T6ZN-G4, the SF E is 91.48% at 1.0 V , due to a decrease in the spin-down current significantly at 1.0V bias voltage. Thus, the adsorption of a magnetic molecule on the ZGNR surface breaks the spin symmetry of pristine ZGNRs, which can result in high SF E. Therefore, such magnetic molecule-adsorbed ZGNR systems can be used in spintronic device applications.