To further study the precursor adsorption and the growth behaviour during the time-resolved e-CVD process, extended pulse durations of Cu(hfac)2 precursor, longer argon purge intervals, and prolonged plasma exposure were employed. Cu(hfac)2 was pulsed into the reactor for 30 s, followed by 60 s argon purge and 20 s of plasma exposure. The plasma discharge power was set to 20 W, and the substrate bias was set to +60 V. The QCM trace of five such deposition cycles is given in Fig. .