The synthesis of nitrides in the form of metastable high Al-content AlxTi1-xN by CVD, where the cubic structure of TiN is preserved while adding AlN, i.e., increasing x, up to at least 0.9, has gained increasing interest in recent years . The presence of AlN increases oxidation resistance of the formed AlxTi1-xN film by converting to an Al2O3 layer as the coating heats up resulting in increased oxidation resistance. Different techniques such as PVD that include reactive sputtering , ion plating , and cathodic arc evaporation , and CVD have been employed in deposition of AlxTi1-xN as a wear resistant coating. Albeit none of these techniques can combine precise film thickness control, high conformality and high uniformity in film quality and composition over large areas. One deposition technique that can combine film thickness control, generate uniform and conformal films and facilitate studies of the surface chemistry, is atomic layer deposition (ALD) -a modification of CVD. In ALD, gaseous precursors are alternately supplied onto a solid substrate. This offers surface self-limiting layerby-layer growth which in turn enables the study of surface chemistry and reaction mechanisms.