Future device architectures should exploit the highly stable and porous character of PTI that could be used for ion migration and retention at semiconducting interfaces. Such applications can make use of the preferred orientation effects we observed in this study, as pore-channel entrances of PTI-IF nano-crystals align perpendicular to a flat host-substrate. Further, once PTI single crystals of about 50 m or larger are available, the extraordinarily stable n-type transport characteristics could be studied in single-crystal devices.