To identify the implantation conditions that allow the introduction of residual stresses in a depth up to 1 µm in LLZTO we calculated the Ag implantation and damage profiles by kinetic Monte Carlo simulations with SRIM software (Figure ). It is shown that for implantation within 1 µm a beam energy of 1.93 MeV has to be used. Both, the distribution of incorporated Ag ions as well as the associated damage caused by the irradiation can be estimated with a peak at 630 ± 30 nm and at 430 ± 25 nm for the amount of incorporated Ag ions and damage, respectively. With a dose of 1´10 14 Agions cm -2 an implanted concentration of 0.003 at% can be expected at the peak. There is the question of how accurate the simulation is when dealing with a polycrystalline ceramic, with possible chemical inhomogeneities. When predicting the ranges for single-crystalline silicon, it is rather precise with a slight overestimation of the range by 2-6 nm increasing with implantation energy. For polycrystalline samples, in general and for LLZTO specifically such studies are, to the best of our knowledge, not available.