In the Voight and nested circuits, charges must pass through both resistors, implying a rate limiting step for an overall process to occur. It is worth noting that the nested equivalent circuit has been used frequently to describe surface trap-mediated charge transfer from photoanodes such as Fe2O3, as well as limiting interfaces in halide perovskite solar cells. On the other hand, in the Maxwell EC, conduction through the circuit occurs through only one of the resistors (the Si resistance in Figure ). This resistance represents the dc resistance of the device in operation. The additional branch of the Maxwell EC represents a short-range relaxation process, for example charge storage, occurring in parallel to the long-range conduction. There are two ways to obtain the extracted parameters from both the Voight and Maxwell circuit. The Nyquist plots can be fit to both circuits separately or transformation equations can be used to convert between ECs based on a single fit. The second strategy has been used here to convert parameters from a Voight circuit fit to those of a Maxwell circuit through the equations: