Figure shows that the cell is greatly influenced by the doping density of the HTM layer; the more the doping density the better the cell performance can be achieved. The simulation output indicates that short circuit current, fill factor, and efficiency are improving due to a higher value of doping density while open circuit voltage is increasing up to a certain level and then dropping again. Hence, if the value of doping density is kept higher the cell will provide a higher efficiency. We have the defect density (NA) of the HTM layer as 1E+19 1/cm3 where the cell can provide a maximum efficiency of 23.62%. However, open circuit voltage is increasing with doping density. Although the fill factor is dropping initially, it is increasing again when the doping density exceeds 1E+19 1/cm 3 and drops again finally. The optimized value for the doping density of the absorber is 1E+16 1/cm3 and the maximum efficiency at this doping density is 25.90%. Here, the optimal value of doping density of ETM is 1E+19 1/cm 3 where PCE is 24.20%, Voc is 0.851 V, Jsc is 34.80 mA/cm 2 and FF is 81.70%.