To get insight into the electronic behavior of the p-BCN monolayer, we calculate the spin-polarized electronic band structure and partial density of states (PDOS). The electronic band structure is considered along the Γ -X -M -Y -Γ high-symmetry directions (Fig. ) in the first Brillouin Zone (BZ). The symmetry in spin up and spin down band structure (Fig. ) and PDOS (Fig. ) shows the non mangnetic nature. This fact is also supported by the zero total magnetic moment. The valence band maximum (VBM) and conduction band minimum (CBM) is located between the Γ -X path of the BZ (Fig. ) implying p-BCN as a direct bandgap semiconductor. The calculated direct bandgap using PBE is 1.77 eV, which is in good agreement with the previous reports . Furthermore, to understand the contribution of individual atomic orbital, the PDOS is plotted alongside the band structure. The plotted PDOS shows that N-2 and B-2 orbitals mainly contribute to the VBM and CBM, respectively, in good agreement with the available literature . B-2 has minor contribution to VBM. Intrestingly, C-2 contributes to both VBM and CBM. This indeed allows us to distinguish it from h-BN .