To use the 13Ns in these applications they need to form thin films with high crystalline quality, conformity, and low impurity levels. One common method to achieve such films for AlN and GaN is chemical vapor deposition (CVD). CVD of AlN and GaN is routinely done at temperatures around 800-1100 °C. For InN, conventional CVD is problematic to use as InN decomposes into metallic indium and nitrogen gas at around 500 °C , well below the temperatures needed to activate the decomposition chemistry of ammonia which is used as nitrogen precursor in the growth process . Atomic layer deposition (ALD) is a low temperature CVD method with a time-resolved supply of the precursors, leading to a deposition fully governed by surface chemical reactions. ALD has the potential to circumvent the high temperature required in CVD of 13Ns and at the same time increase the ability to uniformly coat substrates with very high aspect ratios. ALD has already been demonstrated to be superior to continuous CVD for deposition of the temperature sensitive InN films .