We prepare the cross-sectional lamella of n-Si/SiO x /TiO x /NiFe oxyhydroxides-alloy sample in the dual-beam SEM (Helios G4, FEI, Thermo Fisher) equipped with a Ga + ion source. We deposit carbon and platinum layers on the device surface by electron and ion beams to protect the samples during the FIB thinning. We collect the high-angle annular dark field scanning transmission electron microscopy (HAADF-STEM) images and STEM electron energy-loss spectroscopy (STEM-EELS) mapping of the FIB-prepared specimen with dual aberration-corrected TEM (Titan Themis Z, FEI) at the operating voltage of 300 kV. We perform plan-view TEM measurements and EELS mapping of TiO x /NiFe film prepared on ultrathin carbon film (3-5 nm) coated Cu support with Titan ST microscope (FEI company) operating at 300 kV equipped with a Gatan Image Filter (GIF)