The potential of this method to fabricate new III-V-based optoelectronic devices lies at its easy implementation (i.e. just a beaker and a current/potential source), material composition tuneability (either by co-deposition or by using an alloy as metal substrate) and bottom-up nanostructuring. Regarding the latter, spatial selectivity on pre-patterned substrates with an insulating mask is intrinsic to electrodeposition, given that it exclusively occurs at conducting regions. In particular, control over size and periodicity of semiconductor nanostructure arrays are key parameters in the new generation of electronic and photonic devices.