As we proved that the sensing properties occurs in an irreversible manner via chemical reaction, the films were also exploited to prepare N-doped carbon thin films, by simple post-carbonization at 400-500 °C directly at the substrate surface. This would enable on the one hand to prepare carbon thin films at low temperature and directly at the substrate surface, and, on the other hand, to introduce nitrogen in the structure in a simple manner, for the development of thin film carbon devices, such as resistive sensors, thin film catalysts, capacitors and beyond. We believe that the materials and the approaches used in this work will open the way for a new exciting and wide utilization of carbon and heteroatom doped carbon materials as thin films, with a functional and easily tunable platform for wide range of applications.