Nanocalorimetry experiments were conducted in a N 2 atmosphere on an as-deposited amorphous film with initial CuP 2.5 composition. The film was heated to about 510 • C for a duration of 100 ms and the average heating rate is roughly 5000 °C/s. The heat released in the 300 • C-400 • C range was estimated as the area under the assumed heat capacity baseline divided by the volume of the film and the atomic density of CuP 2 in the P2 1 /c structure (0.062 atoms/ Å3 ). Temperature-dependent thermoelectric characterization (electrical and thermal conductivity and Seebeck coefficient) was performed in vacuum on three films annealed under different conditions (composition before annealing: CuP 2.5 ). We found that phosphorus losses in CuP 2+x films deposited on the chips for thermoelectric characterization were much faster than in the films deposited on glass. Two possible reasons are the lower thickness and better thermal contact with the Si susceptor. A Cu 2.50 P film (labeled "Cu 3-z P") was obtained by annealing at 400 • C for 30 s. A Cu 1.61 P film was obtained by annealing at 350 • C for 5 m. A CuP 1.35 film (labeled "CuP 2-y ") was obtained by annealing at 350 • C for 30 s. Before thermoelectric characterization, the chips were glued to ceramic 24 pin dual in-line (DIL) chip packages using silver epoxy and wire bonded with aluminum wires. The packages were characterized in a tailored closed cycle refrigerator (Janis), providing vacuum down to p = 7× 10 -7 mbar, coaxial wiring to the packages, triple temperature shielding and a temperature range from 10 K-500 K. The setup and analysis routines were verified by reference measurements on 100 nm gold films.