Thin Film Growth: Direct liquid injection chemical vapor deposition (DLI-CVD) methods similar to Faraz et al. were used to deposit B6TFMO thin films on c-sapphire. Samples from two different growth runs were synthesized by DLI-CVD via a horizontal flow AIXTRON AIX 200/4FE AVD (atomic vapor deposition) system . The films had a nominal stoichiometry of Bi6Ti3Fe1.5Mn0.5O18. The films were deposited using a 22 % to 23 % bismuth excess in order to mitigate the loss of volatile bismuth during the two-step growth process . The 0.100 mol dm -3 bismuth, iron and titanium precursors in toluene solution, Bi(thd)3, Fe(thd)3 and Ti(O-iPr)2(thd)2 (where thd = 2,2,6,6-tetramethyl 3,5-heptanedionate and O-iPr = isopropoxide), were purchased from Epivalence Ltd. The 0.025 mol dm -3 manganese precursor was prepared by dissolving Mn(thd)3 (99%, STREM chemicals) in anhydrous toluene (99.8%, Sigma-Aldrich) under N2 in a glovebox. The substrate was loaded into the reactor chamber set at a pressure of 10 mbar while the temperature of the rotating susceptor-heated sample holder was set to 630°C. The conditions were maintained for the entirety of the deposition process. The low vapor pressure