Figure shows the Eu-BDC film thickness measured on SiO2 and graphene using AFM as a function of ALD/MLD cycles. The growth on the SiO2 surface demonstrates a linear dependence, however, the GPC of ≈1.94±0.03 Å/cyc at 250°C is slightly lower than on the Si substrate (see experimental details in SI). We found that the Eu-BDC film grows on TPO graphene without a noticeable nucleation delay, and all the samples exhibit nearly linear growth within the first 75 cycles, with the GPC of ≈1.45±0.02 Å/cyc (PVAc at 250°C), ≈1.30±0.12 Å/cyc (PMMA at 200°C), and ≈1.47±0.17 Å/cyc (PMMA at 250°C). After 75 cycles, the GPC of the Eu-BDC film grown on TPO PMMA graphene at 200°C increases, while for films grown at 250°C, GPC saturation is observed. GPC saturation after 75 cycles is also visible for thin films grown on TPO PVAc graphene. The thicknesses of the deposited films for the same number of ALD/MLD cycles differ between TPO graphene and the SiO2 substrate due to the more chemically inert surface of graphene.