60 nm silicon oxide SP-IRIS supports were pretreated with oxygen plasma to clean and activate the surface. The oxygen pressure was set to 1.2 bar with a power of 29.6 W for 10 min. Then chips were dipped into a 1% w/v aqueous solution of MCP-4 in 0.45 M ammonium sulfate. The supports were immersed into the coating solution for 30 min at room temperature, rinsed with bidistilled water, dried under nitrogen stream, and finally cured at 80 °C for 15 min.