Chaitoglou and Bertran studied the influence of temperature on the CVD graphene growth process within the range from 970 to 1070 °C. At temperatures below that value, no nucleation of graphene took place, hence the choice of temperature was made, while the higher limit was close to the Cu melting point. They studied, from SEM images, the effect of temperature on the process kinetics of graphene growth, considering morphological features such as nucleation density, growth rate, and graphene surface coverage. Their findings indicated that the highest nucleation density corresponds to the lowest growth temperature of 75 nuclei/10,000 µm 2 at 970 °C, while the lowest nucleation density corresponds to the highest temperature of 3.4 nuclei/10,000 µm 2 at 1070 °C. At higher temperatures, however, the graphene growth rate increased sharply from 144 µm 2 /20 min at 970 °C up to 1369 µm 2 /20 min at 1070 °C .