InAs and Al are prominent materials that are frequently used to fabricate nanowire based devices in search of MZMs. InAs is one semiconductor of choice in such setups thanks to its strong spin-orbit coupling and large Landé g-factor. Al, despite its relatively low transition temperature of 1.2K, is compatible with established fabrication methods and has yielded devices with clear signatures of induced effective superconductivity. Al has been epitaxially grown on InAs nanowires producing well-ordered, high-quality interfaces with low mismatch, in which the crystallinity of both the InAs and Al components was maintained though the Al layer is typically granular. This enabled the experimental observation of a hard superconducting gap induced in InAs. To date, there have been no theoretical or experimental investigations of a tunnel barrier at the InAs/Al interface. It is presently unknown what material(s) could serve as a barrier and what would be the optimal thickness range.