Taken together, these results demonstrate the role that near-field energy transfer can allow for extremely efficient excitation energy transfer in NPL systems, and extended NPLs may act as excellent antennas. In-situ grown HgTe NPL/QD heterostructure. We previously found that HgTe QDs will grow on the surface of HgTe NPLs following a cation and ligand exchange from oleic acid passivated CdTe NPLs to oleylamine passivated HgTe. The growth can be controlled by precursor concentrations and is temperature activated-holding the cation-exchanged NPLs at elevated temperatures will speed up growth, and storing in a freezer will inhibit growth. This growth is specific to HgTe because QDs will form at ambient temperatures with the same precursors required for cation exchange. These in-situ grown HgTe QDs appear to be attached to the surfaces of the NPLs, possibly growing epitaxially from reactive sites introduced by the labile surface Hg, and result in near complete NPL band-edge quenching along with high photoluminescence quantum yield (PLQY) from the resultant HgTe quantum dots (Figure -b, blue trace).