To further confirm the CISS effect in WOLEDs and enhance device performance as well, the device configuration is optimized as ITO/HATCN (5 nm)/TAPC (50 nm)/1 wt% DBP: TcTa (5 nm)/30 wt% BDMAC-XT: CBP (3 nm)/TcTa (2 nm)/40 wt% (S)-PCNTPA: PYD-2 (12 nm)/TmPyPB (40 nm)/LiF (1 nm)/Al (device W2). In comparison with device W1, device W2 has a supplementary TcTa layer between the chiral deep-blue layer and achiral green layer for completely eliminating the chirality-induction effect and validating the CISS effect. Encouragingly, device W2 achieves pure white light with an excellent CRI of 94 and good CIE coordinates of (0.253, 0.259), as well as a remarkable ηext,max of 20.4%. The EL spectrum of device W2 is similar to that of device W1, displaying three main EL peaks at 434, 510 and 610 nm, respectively, but the EL intensity in blue region is increased.