LEDs after charged at 3.5 V which was evidently presented in % of nitrogen was fabricated as a symmetric coin cell as well as pouch cell and their performance in 0.2 M p-phenylene diamine and 1 M TEABF4 in AN is higher while compared to 1 M TEABF4 in AN alone. The substantial improvement in capacitance and energy density are attributed to the existence of N-functionalities such as pyridinic and quaternary N as well as redox additive (p-phenylene diamine). Das et al. developed the N-doped graphene by hydrothermal with the mixture of GO and urea are in the ratio of 1:50 for 6 h at 160 °C and also studied the influence of media on the capacitance . The content of nitrogen in the prepared N-doped graphene was found to be 7 at. % from XPS studies. Two-electrode investigations revealed that the capacitance of N-doped RGO was found to be 199 F g -1 at 0.1 A g -1 in 1 M H2SO4 solution which is superior than 6 M KOH solution. However, the specific capacitance of N-doped RGO at 1 A g -1 was found to be 155.5 F g -1 in 6 M KOH solution which is higher than 1 M H2SO4 solution (138.2 F g -1 ). It has been suggested that the hydrated ionic radii of K + ions are smaller that giving rise to quicker diffusion of ions in alkaline medium.