Previously, a technique of ZnO crystal growth by spontaneous crystallization from the melt at pressure of 4.2 GPa and temperature of 1800 K in a large-volume high-pressure apparatus was developed . Such an approach allows avoiding the problem of excessively high temperatures in the melt method while preserving its advantage of adding any desired impurity. Here we extend this technique for systems where various dopant sources containing group-V elements were added in the high-pressure cell along with ZnO. The method yields high quality single crystals suitable for studying fundamental properties of the material.