This work serves as a proof of concept and shows that the TCS-PES is not limited to soft materials, such as perovskite solar cells, but can also be applied to hard semiconductor devices, here, III-V semiconductor stacks. Two samples, a hetero-interface with distinguishable elements, Ge|GaInP, and a more complex layer stack, GaAs|GaInP have been prepared by MOCVD. Each sample has been mechanically polished using a MULTIPREP TM polishing system that provides an accurate way to control the TCS angle, i.e. the angle between the TCS and the bottom of the sample. The TCS preparation successfully revealed the buried Ge and GaAs substrates as well as their interface with GaInP.