the formation of oriented films on the Si-wafer surface. This is indicated by the unequal intensity of the reflection rings over the azimuthal angle (see Figure ). At a relative humidity between 5 to 50%, a lamellar phase with the (100) plane mainly oriented parallel to the substrate surface is observed from higher intensity in the qz direction. The phase orientation of the lamellar bilayers parallel to the substrate for GMO film was previously attributed to surface contribution directing the formed bilayers. The reflections at q ~ 1.4 and 2.8 nm -1 correspond to a d-spacing of 4.5 nm, comparable to the lamellar phase formed in the bulk GMO60HEA5. Between 60 to 95% of relative humidity, the appearance of a reflection peak at q ~ 2 nm -1 is observed. The maximum of the peak shifts to lower q values (from ~ 2 nm -1 to ~ 1.8 nm -1 ), and its intensity increases with humidity. The first reflection at q ~ 1.8 nm -1 may correspond to a second lamellar phase. However, the broad Kapton peak around ~ 4 nm -1 from the window of the humidity chamber interfered with the data at higher q values, and the second-order reflection expected at 3.6 nm -1 may be covered.