To address these issues, optimization of key cell parameters, such as layer thickness, doping density, defect density, and band alignment, is essential. Studies have shown that fine-tuning the energy alignment at the interfaces can significantly improve carrier transport and reduce recombination , . Additionally, reducing the defect density in the absorber layer enhances carrier lifetime and diffusion length, further improving quantum efficiency and overall performance . Optimization of the HTM and ETM thicknesses has also been reported to minimize series resistance and improve charge transport, resulting in higher efficiency .