It is difficult to directly compare the defectivity of F1 between the non-preferential (Figure ) and Si background substrates (Figure ) due to slight differences in each chemical guiding pattern that are not controllable during the dry etch process. M1 shows a faint degree of lamellar nanostructure with patches of increased contrast that show a similar aligned pattern as compared to F1. Upon staining, the nanostructure of the substrate becomes more apparent in M1S and looks similar to that of the non-preferential background DSA workflow, an aligned nanostructure comprised of two lines followed by one line of dots. Figure shows SEM images of the BCP film, F2, rinsed monolayer, M2, and stained monolayer, M2S, during the second round of DSA. Again, the defects are healed in F2 and there is a greater degree of contrast in M2