We speculate that the primary reaction mechanism for the film deposition is a surface The resistivity of approximately 50 nm In2O3 films deposited on glass at 290 °C with different water pulse lengths was determined by four-point probe measurements. The film resistivity reflects the electrical properties of a film since it is determined by the carrier concentration and carrier mobility. Electrical conductivity of In2O3 is reported to be mainly controlled by the oxygen stoichiometry in the film. A perfect In2O3 stoichiometry is not ideal since it has no oxygen vacancies, which results in increased resistivity. In2O3 typically exhibits n-type semiconducting properties from the oxygen vacancies , which increase carrier density and hence act as donors. The deposited films in this study show a general decrease in resistivity, i.e., an increase in conductivity, with longer water pulse time. The improved conductivity for films deposited with increased H2O dosage may be attributed to incorporation of hydroxyl groups which cause selfdoping. The resistivities of different film samples, all with approximately 50 nm thicknesses, deposited with 6 s, 9 s and 12 s of water pulse were 1.2; 2.6 and 0.16 mΩcm, respectively (Table ). Upon postdeposition annealing at 520 °C for 2 hours in air, the In:O ratio in the film changed from 1:1.2 to 1:1.3 but this lead to an increase in the resistivity from e.g., 1.2 to 2.0 mΩ.cm (shown in Table ). This result is in line with previous reports on the importance of the oxygen vacancies for the electrical conductivity of the In2O3 films. Optical transparency of the films was obtained from the transmission spectrum of 50 nm thick In2O3 films deposited at 290 °C on glass referenced to the spectrum of the uncoated glass substrate. The resultant average transmission of the In2O3 film in the wavelength range 250-800 nm was calculated using the relationship A = 2 -log10 (%T), where A is absorbance and T is transmittance of light. The spectra in Fig. shows the optical transmittance for the In2O3 films with uncoated glass included for reference. The highest obtained optical transmittance was 71 %, which is very similar to an uncoated glass substrate, which showed 74 % transmittance. The optical transmittance of the In2O3 films is comparable to values already reported in literature. With uncoated glass being the control, it would be 71/74 x 100% which equals 96% transmittance in relation to glass.