The ratio ID/IG of the intensities of the D and G peaks is featuring the level of disorder in graphene. However, the increase of disorder in graphene is characterized by two regimes displayed by ID/IG. "There is a regime of "low" defect density, where ID/IG will increase as a higher defect density creates more elastic scattering" ; however, we have also a "regime of "high" defect density, at which point ID/IG will begin to decrease as an increasing defect density results in a more amorphous carbon structure, attenuating all Raman peaks [as told by ]"; Childres and coworkers, referring to Saito et al., 2011, consider these two regimes featuring "nanocrystalline graphite" and "mainly sp 2 amorphous carbon" phases, respectively. To characterize the disorder, we find also used the LD length, that is, the average distance between defects, estimated by means of the Raman spectroscopy. In the Figure by Childres and coworkers it is shown the Raman spectrum of graphene irradiated by electron beam, which is "showing significant D, D´ and D+G disorder peaks. The concentration of disorder can be extracted from the intensity ratio ID/IG".