Silicon wafers were used to fabricate templates. Photoresist was spin-coated on the wafer at 3000 rpm, using either maN 1420 for direct laser writing or AZ ECI 3012 for standard UV lithography. Patterning was performed using either direct laser writing (DWL66+) or a mask aligner (EVG620NT), and the photoresist was subsequently developed in maD 533S or AZ 726 MIF, respectively. Dry etching was then performed using an Oxford NGP80 system with a gas mixture at 100 W, 100 mTorr, with flow rates of 30/12/10 sccm SF 6 /O 2 /CHF 3 . The reactive ion etching duration was adjusted according to the required depth for each layout (typical treatment of 10 min resulted in approximately 4-6 µm depth). Remaining resist was removed using DMSO at 70 °C for a minimum of 30 min. For templates requiring silanization, the wafer was first cleaned with oxygen plasma (2 min, 100 W), followed by vacuum-assisted deposition of Trichloro(1H,1H,2H,2Hperfluorooctyl)silane. Alternatively, templates could be created using SU-8 instead of silicon dry etching, in which case standard lithography was performed using the SU-8 3000 family of photoresists.