One of the main advantages of chemical vapor deposition (CVD) over line-of-sight deposition techniques, such as sputtering, is the higher conformality achieved on objects with complex topologies. However, most CVD processes fail when it comes to deposit conformal films on structures with high aspect ratios such as structures coated in the production of most modern electronic devices. For many materials, the time-resolved form of CVD, atomic layer deposition (ALD), has enabled deposition into high aspect ratios. 1 ALD allows, at least in theory, perfect conformality as the film deposition is controlled by self-limiting surface chemical reactions. It has been demonstrated that continuous CVD can deposit perfectly conformal films when conducted under conditions that allows the kinetics of the surface chemical reactions to control the film deposition. 2 Typical conditions for kinetically controlled conformal CVD are low deposition temperatures, typically between 100 and 250 °C, low total pressures, typically 10 to 1000 Pa and high precursor partial pressures, typically 0.2-9 Pa. Alternatively, the surface reactions can be slowed down by addition of chemical species with a higher sticking probability and life-time on the surface than the film forming species, which blocks surface sites and hinders adsorption of film forming species, allowing them to diffuse further in the gas phase before reacting. Such molecular surface inhibitors are typically molecules that do not participate in the film growth chemistry, but instead impede the growth by binding strongly to the growing surface, or preventing release of ligands from the growth precursors. Surface inhibited continuous CVD has been demonstrated for metals 5 and metal borides but not yet for carbides. We also note that only very few ALD processes has been published for carbides, with TaC 6 and WCx 7 as notable examples. The lack of ALD processes for carbides is to a large part explained by the lack of a suitable carbon precursor.