However, in SCEs, the electrostatic potential is inefficiently screened by the electrode surface and the potential drop within the SCE is extended throughout a SCR. The SCR is analogous to the electrochemical double layer formed on the electrolyte side of the electrochemical interface and features an imbalance of charges until the surface charge is fully screened in the SCE bulk region. The width of the SCR depends on the dopant concentration but for a typical doping concentration of 10 17 dopants/cm 3 the SCR spans 100µm. The imbalance of charges is coupled with the spatially varying electrostatic potential and field within the SCR (see Eq. ( )). Therefore, the band energies within the SCR also differ from the bulk semiconductor; this is known as band bending, which significantly impacts the electrochemical properties of SCEs. Additionally, interactions between the SCE and the electrolyte may shift the band edges, and capturing this necessitates careful modelling of the SCE-electrolyte interface.