It is worth mentioning that the C2H6 signal could also emanate from a β-hydride elimination reaction, by which C2H4 molecules desorb and combine with H2 to form C2H6. This reaction pathway has been reported to be the main route for liberating ethylene C2H4 from Si(100) and GaAs surfaces. Additionally, Qi An et al examined the reaction mechanisms involved in GaN growth with TEG using ab initio quantum mechanics calculations and found out that both C2H4 formation by β -hydride elimination and direct desorption of C2H5 may occur in the GaN growth process . As described above, it was not possible to track the C2H4 ion signal at m/z= 28 in our mass spectrometry experiments, as this signal coincides with the signal from N2, used as a carrier gas and thus present in high concentrations.