planes. The energy decrease resulting from the adsorption of C6H6 on the (111) plane is 6 times larger than that on (110). At higher temperatures, toluene is expected to decompose into various hydrocarbons , and therefore the growth of 3C-SiC is no longer directed towards the <111> direction. Without the directing effect of the aromatic hydrocarbon, the growth happens mainly on the (110) planes having the lowest surface energy, which is similar to the case in the CH4 process.