Among the fabricated cathodes, 3C showed the highest current -density reflecting the high charge storage capacity. CV measurements were repeated at various scan rates from 1.0 to 2,000 mV s -1 and the CV results were provided in Figure ,c for 3C cathode (please see Figure and for 1C and 2C cathodes, respectively). The fabricated AZICs have similar CV curve shapes and also have quite good rate capabilities. The electrochemical kinetics of the fabricated devices were analyzed using the CV curves at scan rates between 1-20 mV s -1 . The surface capacitive and diffusion controlled contributions were calculated using the Dunn method. As shown in Figure and, the diffusion-controlled contribution was dominant at low scan rates and the diffusion-controlled contribution was decreased with the increasing scan rate. The surface capacitive charge storage is dominant at all scan rates. The galvanostatic charge-discharge measurements of the fabricated AZIC devices were performed in a voltage window of 0.0-1.8 V and the GCD curves of the AZICs at 0.1 A g -1 was provided in Figure . The cathodes have almost isosceles triangular curve shapes, reflecting the high Coulombic efficiencies. The discharge times at 1.0 A g -1 were found as 386.3, 444.1 and, 679.5 seconds for the 1C, 2C and 3C AZIC devices, respectively. The IRdrop values were also calculated for the fabricated devices and the obtained values were 21.5, 9.2 and, 4.7 Ω for the 1C, 2C and 3C devices, respectively. The low IRdrop value of 3C indicates the good charge transfer at electrode-electrolyte interface and the conductive nature of the 3C material. It is also noteworthy to mention that the GCD curve slopes of the AZIC devices were decreasing at voltage region 0.0-0.3 V, which indicates the capacitance increase due to the pseudocapacitance contribution of hydrogen-involved reactions. The GCD measurements were also performed at higher current densities up to 20 A g -1 and the GCD curves for the 3C AZIC were provided in Figure (please see SI Figure for 1C and 2C devices).