In summary, we used our recently reported In(III) triazenide precursor in combination with H2O to deposit In2O3 films in a thermal ALD process. Polycrystalline In2O3 films with a cubic structure were successfully deposited. The GPC, impurities, and In/O ratios are in line with the literature for other In precursors. The transmittance was found to be >70% in visible light and the resistivity was found to be 0.2 mΩcm. A temperature interval with self-limiting growth was found between 270 -385°C. This is higher than that for ALD of In2O3 using the previously reported In(famd)3 precursor. After a direct comparison between the two In precursors used in this study, we suggest the temperature interval for 4 could be lowered by using a stop flow mode ALD process.