In initial experiments, we found that copper films can be deposited using a continuous e-CVD process using Cu(hfac)2. However, the resulting films exhibited high porosity along with significant carbon and fluorine contamination. These results are described in section SII in the supplementary material. From previous e-CVD studies, we note that an e-CVD process where the supplies of metal precursor and plasma electrons to the surface are sequential improves the film density. We therefore explored different pulsing schemes for time-resolved e-CVD processes using Cu(hfac)2.