To conclude, we have demonstrated that InAs nano-islands are formed when As is deposited on In at different cathodic potentials (-1.175 to -1.35 V). We show that the thickness of the InAs nano-islands grown in 90 min do not vary significantly with applied potential, suggesting that the growth is limited by diffusion of As atoms into the In, and not by the As ions' electrodeposition rate. While the nano-island thickness did not increase with potential, we find the resulting crystal quality to be significantly potential-dependent. Interestingly, the crystal correlation size of the InAs nano-islands at low applied potentials (~ 25 nm at -1.175 V) is almost as large as the nanoisland thickness. Moreover, we show that for more cathodic potentials than a critical potential (i.e., -1.3 V) the crystal correlation size steadily decreases (i.e., to ~9 nm for -1.35 V).