A series of SiC coatings were deposited on flat graphite substrates at 1000 ℃ via pulsed CVD using different pulsing schemes to study the pulsed process. A first group of samples were prepared with a fixed Si-pulse of 3 s and a varying C-pulse of 0 to 5 s. A second group of samples were grown with a fixed C-pulse of 3 s and a varying Si-pulse of 0 to 5 s. The H2 purge was 1 s for all samples. The total deposition time for all samples were 30 minutes and their x-ray diffractograms are displayed in Figure . Peaks from the graphite substrates and 3C-SiC are present in both groups of samples, indicating that it is possible to grow 3C-SiC without having the two precursors in the chamber at the same time. The sample prepared using only a C-pulse of 3 s (and 0 s Si), does not show any sign of 3C-SiC phase, whereas on the sample deposited with a Si-pulse of 3 s (and 0 s C), the XRD shows a coating consisting mostly of Si with a slight incorporation of 3C-SiC, which may result from the reaction of Si species with the surface of graphite substrates in the beginning of the deposition.