Our earlier work on area-selective deposition using e-CVD, where only conductive areas of a substrate exhibit metal film growth despite bombarding precursor-exposed conductive as well as non-conductive substrate regions with plasma electrons, 8 supports that ESD does not play any significant part in the surface chemistry of e-CVD. Had ESD played a dominant role, we would have expected electron-stimulated desorption of fragments and film growth also on non-conductive substrate regions. We cannot rule out surface chemical contributions from ESD, but we currently have little evidence for ESD playing an important role. We also note that the EE-ALD processes use primary electrons with an energy of 100-200 eV and no substrate biasing, thus the EE-ALD process is inherently different from our e-CVD process.