Next, to understand the effect of stacking of layers on their electronic properties, we deduced electronic band structure and density of states (DOS) of WS 2 /graphene heterostructure and they are presented in modified when they stack with graphene to form heterostructure. As evident from the band structure, the conduction band minimum (CBM) and valence band maximum (VBM) of WS 2 located at the Γ-point has been significantly lowered in the heterostructure. Thus, the bandgap of WS 2 in heterostructure has been reduced to 1.1 eV in heterostructure compared to 1.81 eV in the pristine WS 2 layer (refer Figure , Supporting Information). This charge polarization could easily facilitate charge transfer from graphene to WS 2 , as observed in the case of MoS 2 /graphene heterostructure. As a result; the bandgap of WS 2 has been reduced. Further from the partial DOS analysis it is inferred that both VBM and CBM states are predominantly contributed by W-5d levels.