Photoconductor devices using PTI-LiBr undergo changes over the course of the measurement because of the migration of ions. As a consequence, the observed hysteresis in IV-sweeps is dependent on the speed of the sweep (Figure ). Materials obtained at 600 °C show no photo-response and can be considered insulating. This is an important observation since it confirms that an increase in structural order and homogeneity in low-temperature PTI samples (as seen in PXRD and FT-IR) and the simultaneous reduction of carbonaceous contaminations translate into better performance of the semiconductor.