As our CVD process is based on the reaction of an organoboron with NH3 in hydrogen ambient, we put this present work in the context of studies involving annealing of ZrB2 in H2 and the ones focusing on B-containing compound CVD on ZrB2 or group 13 nitrides on ZrB2. The study by Tomida et al. showed that annealing in hydrogen up to 1100 °C did not affect the ZrB2 surface. At a higher temperature of 1200 °C Padavala et al. deposited semiconductor BP films from diborane (B2H6) and phosphine (PH3) at 1200 °C and without apparent change to ZrB2 template. The presence of NH3 is known to results in the partial nitridation of the surface as seen from the ZrBxN1-x interlayer reported for AlN and GaN growth. The nitridation of the surface still allowed to obtain an abrupt interface between film and substrate.