where θGA and θNGA are the amount of material present after ALD/MLD on the growth and nongrowth areas, respectively. The selectivity of the ALD/MLD process at 250°C for PVAc graphene films exceeds 0.9 up to 11 nm (Figure ), which is sufficient for fabricating a heterostructure device. While PMMA graphene samples demonstrate lower selectivity than PVAc chips for thicknesses below 12 nm, the difference vanishes as the Eu-BDC film thickness increases. When the temperature decreases from 250°C to 200°C, selectivity drops due to the increased interaction of reactive precursor molecules with the pristine graphene surface. A significant decrease in selectivity was observed, dropping from 75% at 5 nm to 35% at 15 nm. Nucleation on wrinkles and other defects also reduces the selectivity of ASD on CVD graphene, as previously demonstrated for HfO2. In addition, adsorbed impurities from the air can enhance ALD/MLD nucleation in pristine graphene areas. We did not test ALD/MLD at temperatures exceeding 300°C due to the partial decomposition of oxygen-containing groups in TPO areas and the reduced reactivity of precursor molecules with the surface, which could drastically decrease the selectivity and GPC of AS-ALD/MLD. Therefore, deposition at temperatures above 250°C on TPO graphene areas is required for AS-ALD/MLD of Eu-BDC films with selectivity exceeding 0.9. Alternatively, less reactive precursors could be used to perform the deposition at lower temperatures.