Finally, we also examined the electron scattering rates for both p-and n-type doping of GeSe at n = 2 × 10 19 cm -3 and T = 800 K (Fig. and Figs S17 -S20, ESI † ). POP scattering generally dominates close to the Fermi energy, with additional contributions from PIE scattering in the R3m phases. ADP scattering becomes dominant at energies above the conduction-band minimum in the n-doped Pnma phases, and also at energies below and above the VBM/CBM in the p-and n-doped R3m phases, respectively, while for the p-doped Pnma phases IMP scattering is predicted to be significant at energies below the VBM.