The high temperature etching reactivity of N2O with individual graphite NPs was measured at different TNP, PN2O, and over different reaction time scales. N2O reacts with graphite NPs with rates and etching efficiencies increasing with temperature in the 1600 to 1900 K range. In this TNP range, N2O reacts with one-to-two orders of magnitude lower etching efficiency compared to O2, probably due to a combination of lower dissociative sticking probability, and reduced branching to CO desorption (etching) from isolated -C(O) sites. Graphite NPs were observed to eventually passivate against further N2O etching at 1800 K, even though sublimation continued to remove carbon from the NP surface, and the balance of rates responsible was discussed. The absolute etching efficiencies for NPs were compared to kinetics measured for various forms of bulk carbon reaction with N2O, all at temperatures well below our TNP range. Nonetheless, the NP etching efficiencies are in the range expected from extrapolating the bulk kinetics to out TNP range.