The ink was at first subjected to an oscillatory stress of 10 Pa (step 1 in Figure ), which falls within the linear viscoelastic region of the ink and has no destructuring effect. After 120 s of equilibration, a high oscillatory stress of 450 Pa, approximately equal to the yield stress, was applied to the ink for 10 s to break the network structure (step 2 in Figure ). Finally, an oscillatory stress of 10 Pa was applied again to the ink to study the microstructure rebuild (step 3 in Figure ). After the high-stress step, the storage modulus instantly recovers to the equilibrium value, indicating the fast and reversible character of the destructuring process.