Using chemical vapor deposition (CVD) with the single-source precursor triethylboron (TEB) in an H2 ambient in the temperature range of 1100 to 1500 °C, we investigate the growth conditions for r-BxC films on the Si-terminated (4H-SiC(0001)) and C-terminated (4H-SiC(0001 ̅ )) faces. We report epitaxial growth on the 4H-SiC(0001 ̅ ) at 1300 °C , while deposition on 4H-SiC(0001) yields polycrystalline films at the same temperature.