The first is the ion depletion mechanism, where the gate electrode controls current flow by either depleting or releasing ions into the electrolyte solution. By altering ion concentrations near the WE and CE, the system can regulate its conductivity, similar to how a transistor's gate controls electron flow by manipulating electric fields. The second mechanism relies on a potential shift. In this case, the gate electrode controls the current response by shifting the potentials of the WE and CE, toggling between an "open" polarization state (where current flow is enabled) and a "blocked" polarization state (where the current is minimized or blocked). When the GE is activated, current flow can decrease significantly, because the potential region of WE is gradually shifted away from the potential region where redox reactions occur. In previous research systems based on the redox mechanism, the capacity of the proposed system was maintained at 20% of its initial capacity when the gate is switched on, showing that while energy storage is reduced, it is still functional under GE activation. This highlights the GE's ability to precisely modulate the electrochemical reactions, akin to a transistor's control over charge flow, opening new pathways for energy management and current rectification in advanced electrochemical devices. Figure illustrates a comparison of the new h-WO3-based device responses under different conditions: without bias, under positive (1 V) and negative (-1 V) bias. The device maintains 2.5% of its initial capacity (Figure ), demonstrating significant control over current rectification. Notably, the device exhibits a 14-fold increase in capacity under reverse bias conditions, suggesting that its capacity depends mainly on the direction of the applied bias. This unique feature opens up new possibilities for rectifying current and controlling energy storage based on external voltage.