The final and perhaps most crucial point to consider is the electronic performance achievable via scalable synthesis methods. While PLD, MBE and sputtering offer reasonably high mobilities across the carrier concentration range, they are not commercially viable deposition techniques. Instead, inkjet printing, spin coating and, potentially, iodination reactions are likely to be the most industrially relevant. The hole mobilities reported from these methods seldom exceed 10 cm 2 V -1 s -1 regardless of carrier concentration, owing to the lower crystallinity of the films and subsequent grain boundary and interface scattering. Such CuI films are roughly on par with SnO mobility, but are beaten by Ba 2 BiTaO 6 (30 cm 2 V -1 s -1 ) and the layered oxychalcogenide (Cu 2 S 2 )(Sr 3 Sc 2 O 5 ) (150 cm 2 V -1 s -1 ), and are still up to 2 orders of magnitude lower than the degenerately doped n-type transparent conductors (In 2 O 3 130 cm 2 V -1 s -1 , Ga 2 O 3 75 cm 2 V -1 s -1 , SnO 2 130 cm 2 V -1 s -1 , BaSnO 3 320 cm 2 V -1 s -1 and ZnSb 2 O 6 49 cm 2 V -1 s -1 ). Despite this, CuI has been successfully used to make thin film transistors via solution-based and inkjet deposition with competitive switching ratios and current densities, and amorphous CuI thin-film transistors (TFTs) have been reported to outperform polycrystalline devices. The prediction of such a large scope for improvement in CuI mobility indicates that other scattering processes may also be in play, such as surface and grain boundary scattering, which could be mitigated as deposition and device engineering process become more sophisticated. These results indicate that CuI will retain its position as the front-runner in the race for a marketable p-type TCM.