The first triazenide precursor we reported and demonstrated for ALD was tris(1,3diisopropyltriazenide)indium(III), In(triaz)3 (Figure ), used together with an ammonia plasma, to deposit indium nitride (InN). The crystal structure of In(triaz)3 showed three The ALD process exhibited an unusual behaviour with two temperature intervals where the InN film growth per ALD cycle (GPC) was constant with temperature (Figure ). The first temperature interval at 220-250 °C showed a GPC of 0.4 Å/cycle and second at 300-350 °C with a GPC of 1.2 Å/cycle. The deposition chemistry was shown to be self-limiting for both temperature intervals (Figure and) and linear film growth with number of ALD cycles (Figure ). It was speculated that an intact In(triaz)3 molecule was the growth species at the first temperature interval, rendering the low GPC. At the higher temperature interval, In(triaz)3 decomposes in the gas phase forming a smaller tricoordinated amide complex, which rendered a higher GPC due to lower steric hindrance and therefore higher surface coverage of the deposited species. This is unusual behaviour for an ALD precursor, as gas-phase decomposition of the precursor is In(triaz)3 was also used for ALD of In2O3 in a thermal ALD process with water as the oxygen precursor. This process demonstrated stable growth with a wide temperature interval between 270 and 385 °C and a GPC of ~1 Å/cycle. The In2O3 films deposited at the higher end of this temperature interval were polycrystalline on Si (100) and showed no C or N impurities by XPS. The temperature interval is higher than that of previously reported tris(N,N'-diisopropylformamidinato)indium(III), In(famd)3, which showed a temperature growth interval of 150-275 °C. This was at least partly ascribed to differences in ALD reactors, as attempts to reproduce the reported results with In(famd)3 rendered a temperature window of 245-315 °C.