The distinct poles in the pole figure measurement in Figure , shows that the r-BxC films are not only c-axis oriented, but grown epitaxially on the 4H-SiC0001 ̅ ). The epitaxial relationships were determined to r-BxC(0001)[101 ̅ 0]∥ 4H-SiC(0001 ̅ )[101 ̅ 0]. The six poles, separated by 60°, show that the films are twinned. This is expected due to the higher symmetry of the hexagonal 4H-SiC substrate compared to the r-BxC crystal of rhombohedral symmetry.