The sequential gas supply in ALD renders a perfectly conformal process, but also limits the ability to afford SC > 1 as the supplied precursor vapor reaches all areas of the features and reacts to deposit a new layer of atoms. The concept of adding surface inhibitors has also been shown to be successful also in ALD processes, affording filling of vias from the bottom up. Apart from that pioneering study, we are not aware of other attempts to make ALD produce films with SC > 1.