We investigated the CrN thin films deposited on silicon by two different methods and for three durations of time deposition and we found important qualitative and quantitative changes in the properties of the deposited layer. Columnar and fine structures are noticed in the cross sections depending on the type of power supply used. The surface of the deposited films changes and becomes smooth and homogeneous for the HiPIMS power supply, but rough and with noticeable growth patterns for the DC power supply.