). While this does not represent an exact solution to the BTE , it provides a reasonable upper limit to the mobility that is achievable in CuI. The e-ph IBTE and total AMSET drift mobilities (computed using the experimentally determined dielectric constant of 6.5) are also shown, as are experimental Hall mobility values from the literature. As the Hall factor (𝑟 H ) is close to 1 for CuI and CuBr, it is reasonable to compare the simulated drift mobility with experimental Hall mobility (𝑟 H 𝜇 ∼ 𝜇 H ). Experimental hole mobility as a function of carrier concentration, broken down by deposition method. IBTE and AMSET drift mobilities overlaid as dashed lines; IBTE+IMP mobility (