In Section 3.2 we report the conformer abundances of CH3ONO deposited in Xe, indicating a significant enhancement of cis at a deposition angle of α = 20°. Quantum chemistry calculations, reported in Section 3.4 do not indicate that Xe binds preferentially to either the cis or trans conformer. We therefore explain the increased cis abundances in Xe as originating from surface morphological effects, as found for CH3ONO:Ar. Because the literature on Xe matrix formation dynamics and surface morphologies is quite sparse, we cannot make predictions about the angular dependence of conformer abundances. We reiterate a need for future experimental and theoretical characterization of the surface formation dynamics, morphologies, and sticking coefficients between CH3ONO and a Xe matrix.