In this article, we deposit CrN thin films on a silicon substrate by two different techniques and three deposition durations for each technique. Both techniques are methods of physical vapor deposition of thin films onto a substrate, the main difference is the type of power supply used in the deposition process. The first method, direct current sputtering, (DC) uses a direct current power supply while the second method, high-power impulse magnetron sputtering (HiPIMS) uses an alternating current power supply. Another difference between the two methods is the quantity that they are able to process, DC sputtering is preferred when dealing with large quantities of large substrates while HiPIMS sputtering is preferred for smaller size substrates. Both are used as industrial scales DC sputtering is used for coating the edge of cutting tools and HiPIMS sputtering is used for the coating of electronic circuits that also act as structural elements. For this reason, we chose to study the structural and mechanical properties of ultrathin CrN depositions, providing insights into the best deposition conditions to a obtain uniform, highly protective coatings. In order to obtain ultrathin coatings, we chose the deposition times of 5, 10, and 15 minutes taking in account that in the case of the industrial applications, the deposition times typically start from 180 minutes, for the layers having more than microns thicknesses.