CrN films were deposited using a Leybold-Heraeus Z-550-S sputtering system. A 6-inch Cr cathode was placed in the top plate of the vacuum chamber and the Silicon (Si) substrates were placed in the bottom holder which is rotating with a speed of 6 rot/min and is kept at a constant temperature of 25 °C. Prior to the deposition, the Si samples were polished and cleaned in Argon plasma for 10 minutes.