The electronic transport properties of solids determines their use in technological applications, including photovoltaics, thermoelectrics, and power electronics. A wide range of approaches have been developed to model band-like transport in semiconductors, with the linearized Boltzmann transport equation (BTE) being the most commonly used. Here, a key computational challenge is to accurately obtain the lifetime of charge carriers (electrons or holes) under a range of perturbations (phonons, impurities, grain boundaries, etc). For electron-phonon scattering, the most reliable approach is density-functional perturbation theory often combined with Wannier or Fourier interpolation of matrix elements onto dense k-and q-point meshes. Unfortunately, this approach incurs a high computational cost which limits its use to relatively small systems or those with high degrees of symmetry.