In contrast to Fig. (a), the results displayed in Fig. Our VFCI results for the case of a Si 2e-DQD portrayed in Fig. (b) are in agreement with the experimental results and the phenomenological analysis of Ref. ; see, e.g., Fig. (b) therein. We note further that such an avoided crossing associated with the condition E V = E Z has been observed experimentally for other Si nanostructures, e.g., in the case of a single QD . In Ref. ,