The monolayer WS2 flakes were mechanically exfoliated using the gold-mediated exfoliation method and transferred directly on top of a highly p-doped Si/SiO2 (285 nm) substrate initially patterned with a network of alignment marks. The marks at the corner of the substrates are protected by the photoresist. Following up, the gold was etched in a solution of potassium monoidide, and the substrate was rinsed in isopropyl alcohol (IPA). The flakes were then identified by optical contrast, and source-drain electrodes were patterned by electron beam lithography. Prior to exposure, we spin-coated a bilayer-positive resist of MMA EL 9 and ARP 6200.13 on the substrate. The exposed pattern was developed using timed steps of hexyl acetate, methyl isobutyl ketone (MIBK)/IPA, and IPA. Following that, we evaporated 5 nm of Ti seeding layer and 55 nm of Au in a high vacuum chamber with e-beam evaporation. The fabrication was concluded with a lift-off in hot acetone at 70 ⁰C for 10 min, rinsing in IPA at room temperature for 5 min, and drying with nitrogen gas. Room temperature electrical measurements were carried out in a high vacuum cryostat (∼10 -7 mbar) cryostat using a SMU K2450 to control the back-gate voltage and source meter K2400 for source-drain bias.