Addition of the group-V elements into the high-pressure cell qualitatively affects the growth of ZnO single crystals even when taken in low concentrations. Expectedly, the method yields much smaller crystals compared to undoped ZnO. The size drastically depends on both the nature and the concentration of the dopant. It appears that doping with phosphorus is generally difficult at high temperatures due to its chemical activity leading to formation of phosphates, which quickly cause the cessation of the crystal growth before any sizable crystals could be formed. Doping with As and Sb -typical semimetals from the same group -has a similar effect on the growth. An increase of concentration naturally causes a decrease of the size practically yielding a polycrystalline product at the upper limit of the studied range of concentrations (5% in our case). The best results were achieved for elemental As and Sb for which the size of individual crystals reaches 200 µm.