Aluminum nitride (AlN) is a wide-gap semiconductor known for its wide bandgap of around 6.2 eV 2 , a thermal conductivity comparable to that of metals of 285 Wm -1 K -1 , a high melting point of 2750 °C, and electrical resistance of 10 Ωcm, making it a highly promising material for utilization in micro-and optoelectronic applications. ALD of AlN typically relies on trimethyl aluminum (TMA) and ammonia (NH3) as precursors. The deposition of AlN from TMA, with aluminum-carbon bonds, often suffers from carbon impurities and an efficient carbon-cleaning surface chemistry is needed. Precursors with aluminum-nitrogen bonds could possibly reduce this problem when depositing AlN. The homoleptic amide precursor tris(dimethylamido)aluminum(III) (Al(NMe2)3, TDMAA), is therefore an interesting alternative, but it is less explored for ALD. TDMAA has been used for AlN in thermal- and in plasma ALD with NH3 as a co-reactant but neither theoretical nor experimental surface reaction studies for ALD of AlN from TDMAA have been reported to date.