There are undoubtedly many opportunities to further improve and extend the O-GEIS and LA-GEIS measurement techniques. Improved drift correction methods for O-GEIS could allow for accurate measurements at higher current densities and/or lower frequencies, which may be useful for some systems . For example, it seems possible that a direct subtraction of the voltage versus time data between S3E-CP and O-GEIS measurements conducted under the same conditions, as shown by Fig. , could be used to quantitatively account for voltage changes during the measurement. The experimental methods for LA-GEIS can easily be extended to the strongly non-linear region of the kinetics, although resistive heating may limit the maximum current excitation. However, the data would need to be analyzed with quantitative models for the nonlinear impedance response to account for the harmonic distortions; this can be referred to as nonlinear galvano EIS (NL-GEIS). One approach for NL-GEIS is to correct the impedance data for the distortions by subtracting the contributions of the disturbing terms at the fundamental frequency, which can be calculated with a Taylor series expansion from the experimentally measured magnitudes of the harmonics . Another approach for NL-GEIS is to directly calculate the BV kinetic parameters from the experimentally measured magnitudes of the harmonics with non-linear impedance models . Exact expressions for the non-linear impedance response can likely be derived from a series expansion of the BV equation, which is infinitely differentiable . Since linear processes like ohmic resistance do not generate harmonics, NL-GEIS may enable accurate measurements of the BV kinetic parameters without requiring explicit IR compensation . NL-GEIS may also provide important information about the symmetry of the kinetics .