, conceivably serving as unique multi-level memory elements in the quest for low-power neuromorphic memory systems , . In practice, due to the fundamental opposing requirements of ferroelectricity (requiring empty d orbitals) and ferromagnetism (requiring partially occupied d orbitals), single-phase multiferroic materials that display room temperature (RT) operation are exceptionally rare . Of the multiferroic materials that do exist, the material properties relevant for multi-state storage are currently limited to weak polarization and coupling values, which has prevented the realization of such devices commercially . BiFeO3 is the most widely studied single phase multiferroic material , but suffers from issues including: the magnetic order is primarily antiferromagnetic and it displays only a weak (~2 emu/cm 3 ) residual moment from a canted spin structure. This prohibits linear magnetoelectric coupling between polarization and magnetization in BiFeO3 and only higher-order magnetoelectric effects are possible with the assistance of large threshold magnetic fields (~3 to 18 T) . This is clearly incompatible with low-energy spintronics , .