Although it appears that small aliphatic hydrocarbons are favored in 3C-SiC CVD, presumably owing to their relatively simpler structures, the use of aromatics as carbon precursor in CVD of other metal carbides has been reported. Nagai et al. deposited β-Mo2C thin films using benzene as carbon precursor , whereas toluene was used for the deposition of SiC reported by Zhuravlov et al . TiCx was prepared both from benzene and toluene .