Overall, the structural disorder in the HH-TT phase, caused by decreased packing efficiency, leads to an energetic disorder manifested in an enlarged band gap and the formation of potential trapping states within the band gap. In a heterogeneous microstructure where HT-HT and HH-TT phases coexist, the ordered HT-HT regions would be largely responsible for charge transport. If the band gap offset between the two phases is large enough so that the energetic overlap of electronic states vanishes, charges would be hindered from migrating between disordered and ordered regions. Charge carriers would then remain confined in the crystalline HT-HT phase.