In summary, we demonstrate the use of a BCP ink for the self-healing of defects in aligned polymer patterns for applications in DSA. Our PS-b-PG(B-r-C) BCP system contains hydroxyl moieties in the PG(B-r-C) block that can graft to substrates and achieve self-brushing. We demonstrate that this grafting reaction occurs on two types of unpatterned substrates: bare Si (with native oxide) substrates and a polymer brush substrate that has a neutral wetting affinity for both blocks of the BCP. Through tracking of the film thickness and in sequential rounds of film annealing and stripping, we show that the BCP irreversibly grafts a monolayer to both types of substrates. We then illustrate how the self-brushing mechanism heals defects in aligned polymer patterns on patterned substrates for DSA with both non-preferential and Si background regions. Through the use of a staining mechanism with AlOx via SIS, we directly image the polymer monolayer and show how the self-brushing mechanism registers a 1:1 chemical guiding pattern on the patterned substrates that does not replicate the defects present within the original BCP film. The new chemical patterns with increased guiding power allow for the healing of defects in films as thick as 𝑡 = 3𝐿 " = 60 nm. While we limit our discussion to one BCP model system, we believe that the self-brushing mechanism will enable defect self-healing in lithographically relevant sub-10 nm dimensions.