The presence of these elongated and sharp-edged pits indicates anisotropic etching of silica in line with previous reports. In general, anisotropic etching was reported in silica, in which the etch rate showed a crystallographic dependence and it was always much larger along the normal axis with significant orientation dependence as compared to the other directions. The simultaneous exposure of two of the four oxygen atoms of tetrahedra corresponded to a surface plane that was perpendicular to Z-axis with a higher etch rate. A kinetic Monte Carlo simulation also addressed the anisotropic wet etching of silica by describing the removal rate of any surface atoms as well as from the perspective of microscopic atomic energy. The observed differences in the atomic arrangements for the surface atoms resulted in dissimilar etch rates for the various crystal planes and thus explained the reason for anisotropy in wet etching of silica. These reports indicate that some crystallographic directions are more easily etched leading to elongated pits instead of circular ones.