In previous work , we showed that a highly <111>-oriented 3C-SiC coating can be obtained from a CVD process using silicon tetrachloride and toluene as precursors. We have shown simulations indicating that the preferred orientation arises from the surface chemistry of the C 7 H 8 precursor. In the present work, we put this theory to the test by growing 3C-SiC multilayer coatings with layers of alternating highly <111>-orientation and random orientation by only switching the C-precursors from toluene (C 7 H 8 ) to menthane (CH 4 ) or ethylene (C 2 H 4 ) under otherwise constant deposition conditions. This approach also enables a much simpler route to fabricate SiC multilayer coatings of varying orientation without the need of changing process parameters in between growth steps.