Upon rinsing of the BCP film and subsequent annealing, there remains a nanostructured polymer monolayer, M1, grafted through the non-preferential brush via interpenetration. Here, the BCPs act as an ink and register the phase-separated pattern directly to the substrate analogous to workflows wherein two distinct homopolymer inks are used to copy the two domains of the BCP pattern independently. The length-scale of the nanostructure in M1 matches that of F1 and the pitch of the BCP, 𝐿 " . The contrast between the polymer blocks on the SEM image of M1 is weaker than that of F1 due to a decrease in polymer material. The grafted monolayer does not contain sufficient material to generate a continuous pattern and therefore many of the lamellar lines from F1 have been broken into discontinuous dots or dashes. While there is good replication of long-range lamellar features from F1 into M1, areas with high curvature become dots in the monolayer. Previous studies using homopolymer inks observed similar defects in areas of high curvature. To increase the contrast when imaging the polymer monolayer, we used 1 cycle of SIS of AlOx to stain the polymer monolayer. SIS is commonly used in BCP lithography for pattern transfer as it enables selective growth of an inorganic hard mask within one domain of a BCP. In our system, the PG(B-r-C) block contains a carbonyl, ester oxygens and hydroxyl chemical moieties on the side chain which can form an intermediate complex with the trimethyl aluminum (TMA) precursor used in SIS. The TMA is quenched when exposed to water vapor during the following step of SIS and forms an inorganic AlOx complex within the polymer structure. The stained monolayer, M1S, has increased contrast between the polymer domains compared to the unstained monolayer M1. The bright phase represents the PG(B-r-C) block, and the dark phase represents the PS block. Many of the lines present in the image of M1 are further broken down into dots or dashes in M1S due to insufficient loading of AlOx into the polymer domain to generate full lines, which has been previously observed when using SIS for pattern transfer. However, the nanostructure present in F1 remains in both M1 and M1S. Figure shows SEM images of the BCP film (F2), monolayer (M2), and stained monolayer (M2S) on the second round of film application. The nanostructure of the two fingerprint patterns, F1 and F2, are identical in lamellar structure and grain size. The lamellar nanostructure persists in the rinsed monolayer, M2; however, there is increased contrast in M2 when compared to M1 with a larger percentage of lines in the nanostructure as compared to dots or dashes. This is further demonstrated in the stained monolayers where M2S has a greater percentage of lines as compared to M1S. Figure shows the change in film thickness (blue, left y-axis) and WCA (red, right y-axis) through the two rounds of film application described above. The 28PS substrate starts with a thickness of 3.7 nm and reaches 37 nm for F1. After rinsing, M1 has a thickness of 6.5 nm indicating irreversible grafting of the BCP to the substrate through the 28PS monolayer. F2 has a thickness of 37 nm, similar to that of F1, while M2 sees an additional increase in film thickness to 8.1 nm indicating subsequent grafting of polymer film from F2 generating a thicker monolayer than M1. A smaller number of polymer chains graft during the second round of film application compared to the first round, similar to what was observed on the Si substrates. Although the film thickness of M1 for the 28PS (Figure ) and Si substrate (Figure ) quantitatively match, indicating a similar degree of total polymer grafting between the two procedures, it can be inferred that fewer BCP chains graft on the 28PS substrates because the 28PS brush occupies some of the total thickness in M1. We hypothesize that this decrease in BCP binding is due to occupation of silanol groups by the 28PS brush molecules as well as kinetic barriers for the BCP to diffuse through the brush layer to find unoccupied binding sites. The WCA data follows a cyclical trend between the 75° WCA of the unmodified 28PS brush, the 80° WCA of the BCP, and the 90° WCA of the monolayer, similar to what was observed on the Si substrates. For the monolayers, the WCA data matches what is observed in the micrographs where the PS phase is found to occupy a majority of the surface.