Using the algorithm detailed in Section II, we conducted simulations to investigate GB sliding initially using the model of Figure and 2 where the GBs are separated by 11 silicon layers. The simulation spanned 20 steps, with each step corresponding to a relative displacement of 0.773 Å (equivalent to one-fifth of the unit cell length in the x-direction, measuring 3.866 Å). Figure illustrates the initial steps characterized by elastic deformation, where no significant bond restructuring occurs, signifying the absence of sliding. This elastic deformation accumulates stress within the structure, eventually leading to stress release through a sliding event between the relative displacement of 8.506 Å and 9.279 Å (steps 11 and 12 respectively). Notably, this sliding occurs between layers 5 and 6 as can be seen in Figure , as well as 17 and 18, which are the grain boundary layers, as depicted in Figure .