Hexagonal boron nitride (hBN) is a broadly-studied two-dimensional material characterized by its thermal and chemical stability. Consisting of boron and nitrogen atoms arranged in a hexagonal lattice, hBN belongs to the family of van der Waals materials, sharing similarities with graphene. One of its distinguishing features is its status as a wide bandgap semiconductor, with a band gap typically ranging from 5 to 6 eV. Due to these exceptional properties, hBN has attracted significant attention and found applications in diverse fields such as photonic devices, 50 fuel cells 51 and biomedicine. Techniques such as chemical vapor deposition, high-temperature annealing of boron nitride precursors, hydrothermal synthesis, and mechanical exfoliation enable the production of hBN in its pure and unaltered form. On the other hand, the controlled insertion of defects into hBN, such as vacancies or substitutions, can significantly alter its electronic and optical properties. The nitrogen or boron vacancies can introduce electronic states within the band gap of hBN, leading to absorption and emission of light in the visible or near-visible range of the electromagnetic spectrum.