The enormous BGR effect in 2D semiconductors has important consequences for any electrochemical application involving interfacial charge transfer. The large band edge energy shifts (0.5 eV) can occur over a narrow range of applied potentials (0.2-0.3 V). In turn, the fundamental driving force for the reaction ∆𝐺 ∘′ changes dramatically. From a kinetic standpoint, the large band edge movements will dramatically affect interfacial charge transfer rates. If the electron transfer rate constant kET follows a Marcus-Gerischer relationship, where 𝑘 ET ∝ exp (-∆𝐺 ∘′ +𝜆)