If the polishing procedure induces significant deviation in the chemical composition of the interfaces, it limits the insights that can be provided by the TCS-PES methodology to the understanding of the III-V semiconductor devices. Such modifications were not observed or at least not pointed out when the TCS-PES was performed on perovskite solar cells. It appears that each class of material requires its specific strategy for the TCS preparation. Comparison with XPS depth profiling measurements or performing interface experiments would help to guide the development of a suitable TCS-PES strategy.