The Si:P+ epitaxial films were grown on Si:B-substrate using CVD. The precursors used were: Dichlorosilane (DCS), Phosphine (PH3) and HCL. The Si substrate is Bsubstrate indicating a small amount of Boron doping that could render the Si substrate weakly p-type. The epitaxial Si:P and the substrate effectively form a p-n junction. We prepared three recipes with different dopant conditions.