From the elemental composition of the films (Table ), adding a B-pulse renders a Ga/N-ratio closer to unity since the nitrogen content of the film increases. This could be an indication of more favored surface chemistry for the nitridation process with the B-pulse, which supports the above reasoning. It should be noted that the carbon content of the films is not significantly affected by the B-pulses which indicate that the NH3-plasma can eliminate the ethyl ligands and that the B-pulse acts to prepare the surface, presumably via the formation of more reactive or less sterically hindered intermediate(s) for subsequent nitridation.