One of the co-authors of this study has developed models to estimate the quality factor -a material descriptor for predicting TE performance. Several highthroughput computational searches for new TE materials have been performed using as a material descriptor. However, the models assume that charge transport is dominated by either electrons or holes, but not both. Inspired by these studies, we derive new material descriptors for TE performance that account for bipolar conduction e↵ects on electronic transport parameters. The new descriptors can be generally applied to narrow-gap semiconductors and semimetals as well as wider-gap semiconductors where bipolar e↵ects are negligible (at low T).