Fig. show the surface morphologies of the resulting materials on SiC grown by both ALD (upper right parts) and CVD (lower left parts) approaches between 320 and 450 °C. For the cases of ALD, weak but homogeneous particle-like features can be seen on the substrate surface at 320 °C (Fig. ) and below (not shown). With increasing temperature, the grain size increases, and the surface coverage decreases, leading to a non-continuous film as illustrated in Fig. . At 450 °C and above (not shown), micro-size droplets/particles are found dominating the surface (Fig. ). For the films from continuous CVD, barely any surface features are seen on the sample deposited at 320 °C (Fig. ). At 400 °C, very low density of nanoparticles can be found on the substrate (Fig. ). At 450 °C, separated, hexagonal grains with diameter ranging from a few nm to 50 nm can be observed (Fig. ). Note that the dimension of the islands (few tens nm) deposited by CVD at 450 °C is much smaller than the droplets (1-2 m) found on the sample deposited by ALD at 450 °C.