Germanium atoms are expected to preferentially occupy the D4R units in the zeolitic frameworks. To investigate whether this is generally true, we first evaluated the average D4R Ge count across a broad range of Si/Ge ratios, as well as across five distinct zeolite topologies (UTL, BEC, CTH, IWW, UOV), each of which contains D4R units in their structure (see Figure ). These topologies were selected as those for which significant experimental efforts have been made to transform them according to the ADOR process, with mixed results. A comparison of our findings with these experimental observations will be discussed in Section 3.5. The occupation of D4R units in general increases with germanium content (i.e., with decreasing Si/Ge ratio). However, with the exception of UTL, the increase is rather small, such that even for very low Si/Ge ratios of ≈ 1-2, the D4Rs are occupied only up to around 40%, which corresponds to around 2-3 Ge atoms per D4R unit, despite there being sufficient germanium content in the sample to fill all D4R sites. Only for UTL the D4R occupation increases significantly and peaks at around six germanium atoms per D4R for Si/Ge ≤ 5. Second, to directly quantify the average preference of germanium for D4R occupation, we evaluated an excess Ge count in D4R units (see Section 2.3), which measures the difference between the observed germanium occupation in D4Rs (Figure ) and the one based on purely random (uniform) germanium distribution across all T-sites. Figure confirms that for all considered frameworks and for almost all Si/Ge ratios considered the germanium prefers to occupy the D4R units. However, this preference is, with the exception of the UTL framework, rather weak, populating the D4R units by only up to one germanium atom more than what one would obtain by randomly placing germanium atoms in the framework. Moreover, after reaching this maximum value of over-occupation at Si/Ge of ≈ 4-7, the preference for D4R occupation plummets, in some cases (BEC and UOV) to the point of disfavoring D4R occupation by germanium altogether (corresponding to negative values of the excess Ge count). Hence, our simulations confirm the observation that germanium prefers to occupy D4R units, however, we find, that with the exception of UTL, the preference is weak and is most pronounced for low to intermediate germanium loading, i.e., Si/Ge ≥ 5 (see Figure and SI Figure depicting excess occupation).