For the third In-CH3 dissociation (see Reaction (9)), ΔrG becomes 26 -31 % more favourable at higher temperatures as a positive effect from the entropic term. The lower activation barrier, in comparison with the first dissociation, is then indicative of its feasibility from a kinetic viewpoint. In fact, the formation of In metal from TMI pyrolysis was first reported by Jacko & Price and, more recently, verified during the InN deposition on 4H-SiC (0001), at T = 450 °C, by Hsu et al. Therefore, this reaction step is solely included in the models evaluated at T ≥ 450 °C.