To assess the crystallinity of graphene and its variation after TPO and ALD/MLD, we calculated the AD/AG ratios and defect concentration (nD) from the measured Raman spectra (Figure and Table ). Figure shows the AD/AG ratio as a function of the full width at half maximum (ΓG) of the G band for PVAc and PMMA graphene before and after TPO and 50 ALD/MLD cycles of Eu-BDC. The defects generated in graphene by UDLW correspond to point-like defects. After the ALD/MLD process, a decrease in the AD/AG ratio and a narrowing of ΓG were observed, especially for PMMA graphene films. Thermal annealing at 250°C during the ALD/MLD partially restored the laser-induced point-like defects and improved the crystallinity of graphene.