Since the damage caused by the ion beam and the change in the lattice from the differently sized ions implanted can have significant impact on the interfacial transport properties, electrochemical impedance spectroscopy (EIS) has been performed. In Figure . 4 a Nyquist plot of a non-implanted LLZTO reference sample and an Ag-implanted sample can be seen. EIS of the Ag implanted LLZTO samples with non-blocking electrodes show the occurrence of a second semicircle as a result of the implantation procedure. This can be attributed to the now amorphized layer on both sides. The pristine hot-pressed sample was fitted with an equivalent circuit consisting of a resistor and a constant phase element (CPE) in parallel. A constant phase element was chosen instead of the capacitance as the semicircle is slightly depressed. The calculated ionic conductivity is 4.9´10 -4 S cm -1 . Under the assumption that the bulk conductivity does not change and that the amorphous layer is symmetric on both sides the implanted sample was fitted with an equivalent circuit of two parallel R-CPE elements in series. The resulting ionic conductivity for the amorphous layer, calculated with the known thickness of 650 nm, is 8.1´10 -8 S cm -1 . This is in good agreement with already reported values for the ionic conductivity of amorphous LLZTO, which are in a similar order of magnitude. The change in lattice structure hindering the lithium-ion transport. The original crystal structure could be regained by an annealing step, as it is typically used for doped semiconductors. The necessary parameters, how much it will broaden the implantation profile and the impact on the residual stress is not known yet for LLZTO and beyond the scope of this study.