Iron films were deposited from ferrocene, bis(cyclopentadienyl)Fe(II) (FeCp2), with plasma electrons as reducing agents on a 1 × 2 cm 2 Si (100) substrate with a 300 nm thermally grown SiO2 layer, partially covered by a 40 nm thick layer of sputter coated silver. The deposition system setup and the experimental procedures of our new CVD method are described elsewhere. Briefly, the depositions were carried out in a vacuum chamber equipped with a hollow cathode plasma source located in the top lid of the vacuum chamber. Argon was used as working gas at a flow rate of 70 sccm through the titanium hollow cathode. The plasma discharge was maintained at 70 W in DC mode at a working gas pressure of 25 Pa. FeCp2 was supplied by evaporation at 70 °C and the vapor was drawn into the deposition chamber by the chamber vacuum. The stainless-steel substrate holder (65 × 42 × 1 mm) was placed in the precursor stream, upstream from the plasma source to allow precursors to adsorb on the substrate without entering the plasma bulk to minimize plasma chemical decomposition of the metal precursors. A DC bias voltage of 40 V, connected to the steel sample holder, was used to attract the plasma electrons to the substrate. Drawing an electronic current resulted in a slight heating of the substrate holder and a temperature of 40 °C was measured by a thermocouple spot-welded to the backside of the substrate holder. This was regarded as the deposition temperature as no other heating was used. The substrates were electrically connected to the substrate holder using silver paint on both the silver coated and the SiO2 sides of the substrate.