in which k1v and k2v 1/2 represent the pseudocapacitive-controlled fraction and diffusion-controlled fraction, respectively. After plotting i/v 1/2 against v 1/2 , k1 and k2 can be obtained. The charge-storage contribution ratios of Si-SiOx@C-1.25 at different scan rates are shown in Fig. . With the increase of scan rates, the pseudocapacitive behaviors gradually evolves and then reach the normalized ratio of 69% for Si-SiOx@C-1.25 (Fig. ), which benefits from the improved conductive pathways granted by CNT supported nano-skeleton structure . Notably, the pseudocapacitive contribution can promote Li/Si alloying/ dealloying process . ). The value locates in the range of 10 -8 to 10 -12 cm 2 •s -1 , higher than DLi+ from some literatures . The result confirms the fast Li + diffusion in Si-SiOx@C-1.25, indicating the advantage of nano-skeleton structure for enhancing the electrochemical performance.