Higher resolution can be achieved by using electron beams (e-beams), and previous uses of e-beam for defect engineering in graphene involved a high acceleration voltage (80-300 kV) inside a transmission electron microscope to control the elastic (e.g. atomic displacement, knock-on damage) and inelastic (e.g. heating) mechanisms induced by the ebeam. These high energy e-beam processes etched carbon atoms from the graphene lattice, rotated bonds in the lattice, and manipulated foreign atoms introduced during graphene processing. Other processes either used a lower acceleration voltage (5-20 kV) to remove pre-existing defects (e.g. hydrogen and fluorine ) from graphene or defined nanostructures in graphene (or carbon nanotubes) through etching C atoms away. E-beam exposure experiments inside a scanning electron microscope (SEM) have revealed a dose-dependent modulation of the carrier density in graphene, attributed to charges generated at the interface with the substrate (typically SiO2). Importantly, all of these processes use the e-beam to manipulate atoms that are already present within the graphene lattice or on its surface without any controlled chemistry through substitution reactions.