After further sputtering to a total sputter time of 3000 s these peaks dominate the spectra. The composition analysis by XPS of sputtered clean films deposited on the Ag coated SiO2 shows 40 at. % Fe, 19.5 at. % C, 35 at. % O, 2.6 at. % N and 2.9 at. % Ti. In contrast, XPS analysis of the Si/SiO2 substrate areas not coated by Ag show very similar, albeit weaker, peaks, ascribed to iron oxides, in the as-deposited samples (Figure ). As these films were sputter cleaned for 1800 s, no change in peak position is observed and the peaks in the iron spectral region vanish after 3000 s sputtering on the SiO2 substrate, indicating a very thin iron oxide which could not be detected in the STEM analysis (Figure ). This shows that the amount of Fe deposited on the SiO2 substrate is very low compare to films deposited on the Ag coated part of the substrate. Our experimental results show that Fe has been selectively deposited on Ag, adding to the previous literature on ASD of Fe on metals. Our results also suggest that the electrical resistivity of the surface determines the ability to deposit metallic films by this CVD method and that the CVD method is inherently area selective from the surface electrical resistivity. This inherent area selectivity of the new CVD process, where plasma electrons are used as reducing agents, does not depend on any thermodynamic or kinetic factors, as in other inherent ASD processes. Instead, creating a low resistivity path for the electron flux from the plasma discharge to the substrate bias supply via the substrate surface is the prerequisite for the deposition chemistry in this new CVD process. We believe that this opens for exciting new possibilities for metal deposition selectively on metals.