Aluminium (Al) is one of the more earth abundant elements, with huge variety of applications, ranging from simple applications like packaging material to light weight material for aerospace applications, while being comparably inexpensive in contrast to many transition metals or rare-earth metals. For the microelectronic industry Al and especially Al-composite films have become indispensable, with trimethylaluminium (TMA) as one of the prominent precursors for vapor phase deposition and the TMA/H2O as one of the most studied atomic layer deposition (ALD) processes. Although the majority of Alrelated chemical vapor deposition-based processes are targeted towards the deposition of Al2O3 thin films, AlN and Al thin films recently have drawn increased interest for applications in microelectronics as insulator and wide bandgap semiconductor (AlN), gate electrode material (Al) or for hydrogen storage applications. For the fabrication of such thin films chemical vapor deposition (CVD) and its above-mentioned variant ALD are the methods of choice. Whereas Al2O3 thin films and the respective processes for their fabrication are well investigated and established, processes for the deposition of AlN and especially Al-metal thin films are less explored and usually require strongly reducing process conditions like NH3, N2H4, or H2 -co-reactants or -plasmas, owing to the highly negative electrochemical potential (Al 3+ ↔ Al 0 = E 0 = -1.66 V) . A strategy, providing those reducing conditions directly from the precursor and thus avoiding rather harsh (plasma) or hazardous (NH3, N2H4) process conditions, is to employ Al-hydride (or alane) complexes as precursor. For CVD and ALD of AlN, the utilization of such complexes, in the form of simple amine stabilized aluminium hydrides (such as dimethylethylamine alane or dimethylamido alane), has been reported before. For Al thin films, the reports for depositions employing aluminium hydrides are mostly limited to CVD. Ternary material systems like AlTiN have been fabricated using alane precursors such as dimethylethylamine alane in combination with titanium tetrachloride and ammonia. A concept which should be mentioned here is the exploitation of a rationally designed balance between stabilization and directed decomposition pathways for a targeted (thermal) decomposition during a process. Such balanced precursors could in principle function as single source precursors (SSP) in CVD. First reports for vapor phase depositions of Al-metal thin films can be dated back to the mid 90's, employing dimethylethylamine alane in CVD and laser assisted CVD as reported by Karpov et al. and Han et al. More recent publications by Blakeney et al. investigating alanes as precursors in ALD are describing the deposition of Al metal thin films in a thermal ALD process employing the diamine stabilized alane [Al(Me2NEtN t Bu)H2] with AlCl3 as co-reactant. The growth of Al thin films could be shown in a low temperature range of 100 -140 °C, with calculated bulk resistivities of 3.03 μΩ•cm for a 77 nm film deposited at 120 °C. The deposition of AlN using AlH2NMe2 and NH3 plasma as the co-reactant was reported by Buttera et al. in a temperature range of 100 -250 °C. Following these concepts, we focused on the chemistry of aluminium hydride complexes targeting application as precursors for vapor phase deposition processes, with respect to influence of precursor ligand-and coordination-sphere on the physicochemical properties, especially thermal properties, combining thermal stability and high volatility, and long-term stability for high shelf-life times.