phase with the flat hexagonal structure as the reference paraelectric, is shown in Table . Overall, the calculated polarization values are larger than P sp 3 of layered FE CuInP 2 S 6 (4 μC/cm 2 ) , and are quite comparable with P sp 3 of semicrystalline poly(vinylidene fluoridetrifluoroethylene) (PVDF-TrFE) (8 μC/cm 2 ) . However these are an order of magnitude smaller than P sp 3 of Sc-doped w -AlN (~125 μC/cm 2 ) . Note that FE doped h-BN exhibits an order of magnitude larger P sp 3 than bilayer h-BN (sliding of the bilayer results a smallP sp 3 ~0.68 μC/cm 2 ) . We also estimate the energy barrier (∆E) for switching the FE polarization using SS-NEB (see Figure ) where we consider flat doped h-BN as a paraelectric reference and Al/Ga atoms are passing through the h-BN monolayer during the switching process. Here, we assume a uniform polarization switching and ignore effects of electrodes, surface charges, and domains. Typically, this approach is widely used in DFT based simulations to to estimate FE switching barrier to predict possibility of ferroelectricity . Our calculated ∆E values are given in Table . Overall, our ∆E values are quite comparable with these of FE co-doped w -AlN (about 20-45 meV/atom at 25% doping concentration) , Sc doped w -AlN (e.g. 55.56 meV/atom at 25% Sc and 21.76 meV/atom at 37.50% Sc) , ScN/AlN supperlattice (40 meV/atom) , and well-known FE perovskite PbTiO 3 (40 meV/atom) . The ∆E values are lower than that of FE ABC materials (e.g. ∆E for LiBeP is 240 meV/f.u.) . Interestingly, although orthorhombic GaFeO 3 has a high FE switching barrier (1.05 eV/f. u.), its ferroelectricity has been demonstrated experimentally .