Complex nonlinear least square (CNLS) fitting can be applied on the EIS data of thin-film LNMO using the Radles equivalent circuit model with PDW as the diffusion model shown in Figure . It is important to mention that all EIS data was validated with the lin-KK test . The EIS data at 3.80 V, 4.70 V and 4.75 V failed the lin-KK test (as shown in Supplementary Materials, Figure ). It is due to the highly non-linear behavior of the electrode when at 3.80 V, which correspond to about 0% SOC. The invalidity at 4.70 V and 4.75 V is attributed to the non-linearity and non-stationarity caused by side reactions, which has been systematically discussed in the previous work . Therefore, the in-depth analysis was conducted on the remaining EIS data that passed the lin-KK test. Figure shows the EIS data, fitting data, and fitting residual of the electrode charged to 4.65 V, which approximates to 20% to 30% SOC. In general, we achieved good overall fitting: the fitted parameter values and uncertainties are shown in Table , and the goodness-of-the-fit can be assessed by the residual curve presented in the Bode modulus plot, which is approximately two orders of magnitude lower than the measured modulus. A higher discrepancy between the data and the fitting can be observed at the last few points in the low-frequency range, where the fitting data becomes a vertical line, but the experimental data still deviate from it. This could be an indication of a even slower diffusion phenomena that is neglected in the PDW model (Equation ). Consequently, we derived a new PDM-3D model (Equation ) with three diffusion coefficients and applied it to the same EIS data at 4.65 V, shown in Figure .