After realizing the properties of a strain-free AuNW, it's always crucial to explore the structural and electronic properties at a different range of strain loading conditions. The strain is applied by varying the lattice constants within the range of -12% to +12% at the step of 2%. The applied strain can be expressed as ε = (a-a0) a0 where a 0 and a are equilibrium and strained lattice constant. The tensile and compressive strain is applied in AuNW to investigate the strain effect on the nanowire. The bond length between gold atoms linearly increases by tensile strain and decreases by the compressive strain (FIG. ). The rate of change of bond length is almost the same for both types of strain. The change in bond length due to strain motivates to find its influence in electronic properties of the system. So, to get insight into electronic properties influenced by the application of ex-ternal strain(FIG. ), we calculate the density of states (DOS) in within the elastic range of 12% to +12% with the increment of 2%. The maximum electronic state is shifted towards the Fermi level when strain is applied from -12% to 12% altering the electronic properties.