Cross section scanning transmission electron microscopy (STEM) was used to determine the presence, thickness and chemical structure of the deposited films. Prior to analysis, thin sections suitable for analysis by STEM were prepared using the lift out approach based on focused ion beam milling. All STEM analysis were performed using a FEI Tecnai G2 TF 20 UT instrument operated at 200 kV. Images were collected with an annular detector spanning the range 80 to 260 mrad. Top view scanning electron microscopy (SEM) was done using an LEO 1550 Gemini SEM instrument with an acceleration voltage of 3 kV. The composition and the elemental mapping of the deposited films layers was determined by energy dispersive X-ray spectroscopy (EDS) using the same SEM system with an acceleration voltage of 20 kV. X-ray photoelectron spectroscopy (XPS) was used to analyze the elemental composition and chemical bonding in the deposited films using monochromatic Al Kα X-rays.