An Aixtron/Epigress horizontal hot-wall MOCVD reactor was used to grow InN for comparison. TMI (SAFC Hitech, Epi-pure grade) and NH3 (99.9990 % and further dried with a getter filter) were used as the precursors and 4H-SiC (0001) was used as the substrate. The deposition was performed with N2 (99.999 % and further purified by a getter filter) as process gas between 320 to 450 °C with continuous supply of both precursors for 30 min. The process pressure was kept at 50 mbar. The gas flows are 15 slm N2, 2 slm NH3 and 0.2 sccm In(CH3)3, giving rise to a N/In ratio of 10 000. The growth time of 30 min combined with the total flow of TMI was chosen so that the same amount of TMI molecules was introduced into both the ALD and CVD experiments.