Interestingly, the use of higher growth temperatures than for the deposition of GaN or AlN did not result in the formation of a ZrBxN1-x interlayer but of a few ZrBxCyNz inclusions instead. The fact that the amount of the ZrBxCyNz phase is low may be an indication that r-BN rapidly covers the surface the ZrB2 in the early stage of the growth and acts as diffusion barrier for both N and C. Another observation that differs from previous work is the change of the surface morphology of the ZrB2 template.