A similar polishing procedure was performed on a second Ge|GaInP sample to obtain a second TCS and check the reproducibility of the oxide layer formation. The results are depicted in Figure and evidence the presence of GaOx and InPOx. This time, the two states for the Ga2p emissions lines are defined. Their quantification even shows that the amount of oxide increases at the expense of GaInP when moving closer to the interface. Polishing under ambient atmosphere is responsible for the emergence of these oxidized states. As the samples were polished dry, locally, the temperature may have also increased and accelerated the formation of these oxide layers. The stress that occurs during the polishing procedure might have been compensated through a reaction with ambient O2 and H2O.