ZnO semiconductor properties are considered to be provided by certain native point defects (oxygen vacancies (V O ) and interstitial zinc (Zn i ) or hydrogen impurities 8 according to the common accepted point of view. However, the fabrication of stable and reproducible p-type ZnO has been difficult due to the self-compensation, the low solubility of the acceptor dopants (typically <10 18 cm -3 ) and large ionization energy (170-380 meV) of all probable acceptor dopants 9-12 . Among potential dopants for p-type doping of ZnO, the elements of group V (P, As, Sb) drew attention following the idea of doping with large-size-mismatched impurities leading to formation of the shallow acceptor complex Sb(P, As) Zn -2V Zn . Such complexes contain the doping atom in the +5 oxidation state substituting cation in contrast to previously considered substitution of anion in -3 oxidation state . Recently, there have been a number of reports on obtaining of p-type ZnO through doping with P 16 , As 17 and Sb . In those works, samples of ZnO were formed as different types of nanostructures: thin films, nanorods and nanobelts.