Film thickness measurements were performed by cross-sectional scanning electron micrography (SEM) (LEO 1550 Gemini) operated at 3 kV accelerating voltage with an in-lens secondary electron detector. Elemental mapping of Si from the Si(100) substrates as well as the film constituents B and C as obtained by operating the energy dispersive X-ray (EDX) detector (Oxford Instrument) in windowless mode. Time of flight Elastic recoil detection analysis (ToF-ERDA) was used to determine the elemental composition. The measurements were carried out with 36 MeV Iodine ( 127 I 8+ ) ions as projectile beam and with a time-of-flight detector. The ToF-ERDA histograms were extracted and converted to elemental concentration-profiles over a depth, using the Potku code . X-ray photo-electron spectroscopy (XPS) was used to study the chemical environment in the films using an AXIS Ultra DLD, Kratos Analytical with Al Kα monochromatic radiation. The samples were sputter cleaned with 3.5 keV Ar ion for 300 sec followed by 0.5 keV Ar ions for 200 sec to remove the contamination due to exposure to the atmosphere. The Casa XPS from Kratos Analyticals Ltd. was used to analyze the XPS data. Film density was assessed by X-ray reflectivity (XRR) using Cu Kα radiations with the Cu Kβ filtered off by a nickel filter. X'Pert MRD diffractometer with 1/32⁰ divergence slit and a 0.27° parallel plate collimator followed by a proportional detector were used to record the data. The measured data were fitted using PANAlytical X'Pert reflectance software.