where E D,q and E host are the total energies of the supercell with and without the defect respectively, µ A i is the chemical potential of elemental species A i as defined in Equation ( ), n i is the number of A i atoms added (n i > 0) or removed (n i < 0) from the host supercell, E F is the Fermi energy whose value ranges between the valence band maximum (VBM) and conduction band minimum (CBM), and E corr is a term that accounts for finite-size corrections within the supercell approach. A schematic for each term contributing to Equation ( ) is shown in Figure . Finite-size corrections leading to the E corr term manifest from several factors. Primarily, the periodic nature of DFT calculations yield spurious interactions between a charged defect and its images that are not present in the dilute limit. Depending on the nature of the method used to account for these interactions, a potential alignment term may also be necessary. Band filling effects of the Moss-Burstein-type may occur in cases where the defect induces a shallow energy state. Various finite-size corrections have been proposed to mitigate these subtle inaccuracies. It is worth noting that finite size corrections are not calculated internally by VTAnDeM and are initially listed as E corr = 0.0 eV in the Defects_Tracker.json file, allowing the user to freely select and apply a correction scheme of their choosing.