III-V semiconductors exhibit exceptional (opto)electronic properties, which makes them ideal functional materials in photovoltaics, photoelectrochemistry, light sensors, light sources and high speed devices. The growth mechanisms of III-V semiconductors in the vapour phase have been extensively studied, shedding light on the effect of growth parameters on the strain, crystallinity and impurities. Common vapour phase growth methods, such as metal-organic vapour phase epitaxy (MOVPE) and molecular beam epitaxy (MBE) , have already demonstrated high quality layers in terms of crystallinity and purity. However, these techniques require expensive equipment due to their operational conditions (i.e., high temperatures and ultra-high vacuum).