. Moreover, the lowest E form is found at BaCuF 6 material. . The mechanical properties were computed using the VASPKIT code . It shows that the above considerable elastic constant differences affect the average mechanical properties like G and Y . Among the spintronics materials studied in this research, the highest Y can be expected from Na 6 TcO 6 . In contrast, the lowest Y can be expected from BaCuF 6 . Y of BaCuF 6 is around 83 % lower than that of Na 6 TcO 6 . ν is defined as the negative ratio of the resulting transverse strain over the applied longitudinal strain in the direction of the applied force . Generally, this value lies in the range of 0-0.5. Natural rubber exhibits ν = 0.5 and steels has ν = 0.3 . Rubber has a high expansion to a small axial stretching, while steel has a relatively weak expansion. Table illustrates that BaCuF 6 value is around 0.4 while that of A 6 MO 6 compounds is between 0.22 -0.24. This indicates that BaCuF 6 is more deformable elastically at a small strain. A 6 MO 6 materials show lateral expansion/compression under strain is smaller than steel. Figure shows the electronic band structures of the spintronics materials. Here, the spin-down bands are represented by blue lines, while red lines denote the spin-up bands. As Table illustrated, only Rb 6 IrO 6 is an antiferromagnetic material. All the ferromagnetic materials show spin splitting. This is more significant in BaCuF 6 and Na 6 TcO 6 where spin-down conduction bands exist much away from the Fermi level compared to the spin-up conduction bands. As a result, those two materials exhibit half-metallic characteristics indicating only the spin-up bands can conduct. The band gap of the spin-down bands of BaCuF 6 is 0.94 eV. The spin-down valence bands of Na 6 TcO 6 form a 1.83 eV direct band gap. In both half metals, valence band maxima and conduction band minima locate at the Γ point indicating spin-down bands act as direct band gap semiconductors. Since metallic and insulating properties depend on the spin direction, half-metals are promising materials for spin-controlled electronics and magnetism in spintronics applications.