Therefore, to maintain the dose needed for a certain level of surface modification while reducing unintentional patterning of an adjacent region by reducing the td only requires a slight decrease in P. We are, in fact, limited by our patterning software as to the minimum value of P, which is magnification-dependent and reflects the limits of control for those conditions. The pattern of the USAF emblem shown in Figs. and were created using a td of 0.4 µs and a P of 0.52 nm, the limit at this magnification. One can immediately discern that the patterning is sharp and that, through optimization of our control parameters, we were able to precisely pattern in the intended area and prevent patterning in areas that were to remain pristine.