Measurements were performed using Zeiss Sigma 300 model. For the cross-section measurements an in-lens secondary electron detector with 3 keV accelerating voltage and 30 µm aperture was used. SE2 secondary electron detector with the same parameters was used to study the top view of the LHAR chips. X-ray photoelectron spectroscopy (XPS) was employed to study the chemical environment in the film. The measurements were conducted using a Kratos AXIS Ultra DLD, equipped with an Ar + sputter source. Monochromatic Al Kα X-ray radiation, with a wavelength of 8.35 Å and a power of 150 W (anode current = 10 mA and anode voltage = 15 kV) was used to record the spectra. The films were subjected to sputter cleaning for 120 s at 500 eV Ar + ion energy prior to the measurements. CasaXPS software was used to analyze the spectral data.