The method of averaging observable properties across configurations can further be extended to a first-principles specific technique, the electronic density of states (eDOS). The a-Al2O3 eDOS is of particular interest, as this material is a coating layer in many electronic devices such as Li-ion batteries, semiconductors, and field-effect transistors. The eDOS, calculated as an average across the 45 configurations in the amorphous model (Fig. ), confirms the experimentally predicted wide band gap insulating nature of this material. States at the valence band maximum (VBM) are O p type character, and states at the conduction band minimum (CBM) are Al s character. Interestingly, we identify two small peaks at the bottom of the conduction band at 3.2 and 4.2 eV which are low density, but highly localized states in this material.