Here we continue the analysis by means of q-Gaussians of the G' band. Here in the following the results. Fig. The best fit (green) onto RRUFF 90047 and two q-Gaussian components. Increasing the stacking of graphene layers, "the G' band continues to evolve with the number of layers until we reach the final material that we must consider which is bulk graphite. For highly oriented pyrolytic graphite (HOPG) … we can describe the G' band with two peaks" (see the Fig In Malard et al., we can find that it "is important to note that the identification of the number of layers by Raman spectroscopy is well established only for graphene samples that have AB Bernal stacking. Graphene samples made by the mechanical exfoliation of natural or HOPG graphite lead to graphene flakes that have predominantly AB stacking, but this is not necessarily the case for graphene samples made by other growth methods" . "For example, turbostratic graphite, in which the stacking of the graphene layers is rotationally random with respect to one another along the c axis …, shows a Raman G' band that is a single Lorentzian (see Fig. (f) [actually, not given in the figure]), just as in monolayer graphene … but with a larger linewidth" . Moreover, "the absence of an interlayer interaction between the graphene planes makes the Raman spectra of turbostratic graphite look much like that for monolayer graphene. The reason for this is that the electronic structure for turbostratic graphite can be described in the same way as monolayer graphene, but now with a broadening of the G' feature …". . The broadening is associate with the random orientation of the layers with respect to each other, as told by Malard and coworkers.