To address this, we introduce a correlation clustering imaging (CLIM) method which clusters pixels in the image based on the correlation in time of their intensity fluctuation. CLIM allows for extracting structural information and optoelectronic properties from the kinetics of the fluctuations in a single, non-invasive measurement. We demonstrate our method on metal halide perovskites (MHPs) semiconductor films and photovoltaic devices in-operando. The choice of MHPs was motivated by several factors: 1) Their successful utilization as light emitters in LEDs and as light absorbers in solar cells and photodetectors. 2) The presence of nano/microscale heterogeneity stemming from grains and grain boundaries in both films and devices impacting their performance and stability, underscoring the critical need to connect their structure and function. and 3) the ubiquity of PL fluctuation in these materials reported across all morphologies ranging from quantum dots(51-53) large nanocrystals , microcrystals and even films , which is key to the success of the proposed methodology.