resistance increases as the devices goes further into depletion. Figure shows the agreement of Si resistances found using both dc and ac methods in the dark for an example device with each protection layer. Also shown are band diagrams comparing the Si band bending at potentials before and after onset. The change in band bending affects the thermodynamic barrier seen by the majority carriers and ultimately the resistance of the junction. Note that for the PEC devices, although the junction resistance is small at more positive potentials, a net current is not observed due to the lack of a sufficient concentration of acceptors at an appropriate energy level in the electrolyte solution.