By depositing films between 160 °C and 350 °C, using 0.3 sec of TEG pulse, it is found that the deposition process is stable at temperatures upto, within experimental error, around 320 °C (Fig. ). The temperature stability is regardless of which B-pulse is used, albeit the different B-pulses render different GPC. GaN deposited at 320 °C was then chosen as deposition temperature to study the variation of GPC with TEG pulse time. The film deposition process shows a saturating behavior for TEG pulses ≥ 0.3 s, regardless of which B-pulse was used, and again the GPC values were different for the different B-pulses (Fig. ). For both the temperature and the TEG pulse length studies, adding a B-pulse affords a higher GPC. H2 plasma as B-pulse affords the highest GPC, Ar plasma a somewhat lower GPC, and H2 gas shows the lowest increase in GPC. Without B-pulse, the GPC seems independent of temperature (Fig. ) between 160-320 °C. The GPC saturates at 0.41 Å/cycle for the TEG pulse ≥ 0.3 s (Fig. ). Despite different GPC observed for different temperatures, the impact of different B-pulses on the GPC is clear: H2 plasma  Ar plasma > H2 as can be seen in Fig. . Stoichiometry and impurity levels of the films were measured by RBS and ERDA (Table ) on 35±3 nm thick films deposited at 320 °C. As seen in Table , all films are Ga rich and have 2-3 atomic % oxygen impurities, explained by the oxyphilic nature of GaN and the exposure to air for several days prior to ERDA/RBS measurements. The carbon impurity level is around 1 at.% in the films where no B-pulse is used or if H2 gas is used as the Bpulse. When H2 plasma or Ar-plasma are used as B-pulse, the carbon level decreases to 0.7 and 0.3 at.% respectively. The hydrogen content in the films is in the range of 1.6-2.5 at.%.