It has been observed that different information is contained in each region of the Si-K edge. To further investigate the correlation between the Si-K edge and the ground state PDOS including both valence and conduction bands, the ground state PDOS was divided into four regions after predicting the PDOS across the entire region from the Si-K edge, and the prediction accuracy for each region was examined. As illustrated in Fig. (a), the 30 eV region from -15 eV to 15 eV was divided into four regions, each spanning 7.5 eV. Here, regions 1 and 2 correspond to the valence band, while regions 3 and 4 correspond to the conduction band.