As mentioned above, we observed a trend of improved prediction accuracy with increasing input range. To investigate how each region of the Si-K edge contributes to this improvement, we examined the prediction accuracy of the ground-state PDOS when each 5 eV region of the Si-K edge was used as an independent input. The results are shown in Fig. ). From these results, it is evident that higher prediction accuracy in terms of MSE is achieved when using the 4 eV-14 eV region rather than the rising region of the Si-K edge for both s-PDOS and p-PDOS predictions.