Ferrari and Robertson suggest the use of a BWF line shape for the G band in carbonaceous materials. In general, BWF is considered to take the size effect of grain boundaries into account. To the work by Nemanich, Solin, and Martin, 1981, that we have previously mentioned, let us also add those by Richter, Wang, and Ley, 1981, and Campbell and Fauchet, 1986, who produced a "phonon confinement model" (PCM), modifying the Richter et al. model. PCM is producing an asymmetric line shape. However, asymmetry of line shape is also an effect of the Fano resonance (see please . In fact, "in addition to quantum confinement effect, electronphonon interaction or Fano interaction also results broadening and asymmetry in Raman line shape of semiconductors" . Yogi and coworkers consider in their work the quantum confinement effect and Fano effect individually and jointly, to determine the features of Raman lines. In fact, what we find mentioned by Yogi and coworkers in the case of semiconductors had already been considered previously for graphene.