The group 13 nitrides (13Ns), aluminum (AlN), gallium (GaN) and indium nitride (InN) are important materials in the semiconductor industry . They range in bandgap from the wide gap of 6.0 eV for AlN , to the narrow 0.7 eV for InN with GaN at an intermediate gap of 3.4 eV . This bandgap range covers ultra-violet to infra-red and thus contains the full visible spectrum making the 13Ns well suited for optoelectronics such as LEDs . InN has also a very high electron mobility and electron saturation velocity making it suited for high frequency transistors .