Fabrication Zn/ZnO thin films The experimental setup for magnetron sputtering deposition is schematically shown in ) with a thickness of 500 µm, but in principle it can also be a paper, quartz, glass, metallic, polymer or other substrate. The cleaned and washed silicon wafer was placed in the process chamber of the sputtering device and the chamber was pumped down to a vacuum of 10 -5 Pa. The deposition involved a combination of oxygen and argon in a set ratio. The sputtering process itself was carried out using a 75 mm diameter zinc target supplied in DC mode with 80 W DC power, placed at a distance of 15 cm from the silicon wafer. A constant pressure of 0.4 Pa was maintained in the process chamber throughout the entire deposition process, which lasted 20 minutes. As a result of the deposition carried out in this way, a porous zinc layer with a thickness of 500 nm was obtained on the surface of the silicon wafer. Several sample batches were prepared this way with various argon to oxygen flow ratios and substrate temperature during deposition.