Given the capabilities of first principle methods used today, producing amorphous eDOS, and in turn NMR and XAS spectra as we have done in this work to understand the electronic structure of a-Al2O3, is certainly achievable for other amorphous systems. The method of averaging across static configurations from experimentally directed sampling of configurations from AIMD simulations can be applied to other amorphous systems and used to calculate electronic properties from first principles methods that are otherwise unattainable using large system sizes. We expect that given the transferability of this method, calculating these spectral properties, and potentially others will become the norm for simulations on amorphous solids, and especially in the field of device physics, encourage progress in fine tuning the electronic properties of these materials.