In this work, we show that ferroelectricity and large piezoelectric response can be introduced into h-BN through substitutional doping of B by isovalent Al and Ga. This breaks the inversion symmetry as Al/Ga atoms protrude out of the flat plane of h-BN due to local sp 3 like Al/Ga-N bonds, inducing a local electric dipole moment, which we find switchable with energy barriers in the range of 16.684 -45.838 meV/atom which yield facile ferroelectric switching. Surprisingly and of high relevance, we discover that these doped h-BN exhibits large negative d 33 (-24.214 pC/N), which is significantly larger than in commercially used w -AlN piezoelectric (5 pC/N ). Moreover, ferroelectricity can persist down to trilayer thickness, thus eliminating the problem of reduce FE response as a result of the depolarisation field found in other FE materials at this scale. We propose that FE doped h-BN can find widespread applications in non-volatile FE memories and particularly in piezoelectric applications such as energy harvesting or sensors.