We investigated the charge carrier dynamics in Sb2Se3 and how sulfur treatment of Sb2Se3 affects the underlying carrier recombination processes using TRMC. In TRMC, photoexcited charge carriers are generated in a semiconductor by a short laser pulse, giving rise to a light-induced change of the conductance in the sample (photoconductance (ΔG), Figure ) as compared to the dark conductance. This photoconductance changes over time due to both radiative and nonradiative losses of free mobile charge carriers in the semiconductor and hence valuable information with regards to the loss mechanism of photogenerated charge carriers in the semiconductor can be obtained. The bare Sb2Se3 and sulfur-treated films were excited with ~ 3 ns pulses (with wavelengths between 350-1100 nm) at different intensities (10 9 -10 13 photons/pulse/cm 2 ) and the change in photoconductance was monitored over time (ns to ~80 μs). As there are no charge selective contacts to separate the charge carriers, and assuming that the carrier mobility does not change during the time window of our measurement, the decrease in the photoconductance with time is purely due to the decrease in the concentration of mobile carriers in the bands by trapping or annihilation by recombination. Figure shows the photoconductance normalized to the amount of photogenerated charge carriers (ΔG/βeI0FA) as a function of time under 500 nm (2.48 eV) pulsed illumination with a light intensity of 3.69 x 10 9 photons/cm 2 per pulse (light intensity corresponding to 1 sun illumination where the laser power was chosen such that the number of photons absorbed would equal to what it would be under 1 sun) for Sb2Se3 and sulfur-treated films.