Possible causes of these discrepancies include non-uniform distribution of the dopant during the CVT (chemical vapour transport) growth process; other unintentional impurities in the samples (perhaps Ca, as observed in the hard X-ray survey spectrum, Figure ) that could have detrimental effects on the mobility; or directional-dependence effects during measurement of the single crystals -the mobility of ZnSb 2 O 6 has reasonable anisotropy, as shown in Figure . Improving the crystal growth process and development of a thin-film deposition route for ZnSb 2 O 6 will allow greater control over sample quality and should provide greater insight into the dependence of charge transport properties on the exact amount of Ga incorporated into the system. Nevertheless, the qualitative agreement between theory and experiment in this study is promising and demonstrates the feasibility and realisation of Ga-doped ZnSb 2 O 6 as a transparent conducting oxide competitive with industry standard materials. wavelength of 550 nm, compared to polycrystalline ITO. Dotted grey lines show 550 nm on absorption and transmission plots.