We note that even with 4 layers the Al slab is already metallic and the fluctuations in the DOS around the Fermi level with an increasing number of layers are small. In this sense, metals are less sensitive to thickness convergence than semiconductors, semi-metals, and topological materials. Interface models were constructed using the Ogre code. For semiconductor/Al interfaces, lattice matching was performed, resulting in a domain-matched interface comprising a 2×2 supercell of the semiconductor and a 3×3 supercell of Al with a mismatch of less than 0.1%, as shown in Figure . To determine the optimal position of the film on top of the substrate and the bonding configuration across the interface, a potential energy surface (PES) was calculated by shifting the film on top of the substrate parallel to the plane of the interface. This is done at an interfacial distance of the average interlayer distance of the film and substrate structures which is given by (a sub + a f ilm )/( √ 2 * 4), which is 1.784 Å for InAs,CdSe,ZnTe/Al interfaces and 2.142 Å for the semiconductor/semiconductor interfaces. Figure shows an example for InAs/Al and plots for the remaining bilayer interfaces are provided in the SI. The most stable configuration of the InAs/(ZnTe,CdSe) interfaces is found to be with In-Te,Se and As-Zn,Cd bonding. In the same vein, the ZnTe/CdSe interface has Zn-Se and Te-Cd bonding. For the most stable bonding configuration, a binding energy curve was calculated perpendicular to the plane to find the optimal interfacial distance. A value of 2.337 Å was obtained for the InAs/Al interface, as shown in Figure .