Prior to deposition of AlxTi1-xN films, the growth characteristics of both AlN and TiN were investigated to ensure self-limiting film growth. Our recent ALD surface chemistry study has shown that both TDMAA and TDMAT do sublime with a sufficient vapor pressure at 120 °C and 60 °C for AlN and TiN depositions respectively. The ALD of AlxTi1-xN was then carried out using these optimized parameters at sublimation temperatures between 90 °C and 120 °C for the TDMAA + TDMAT mixture and the chemical composition was monitored. A low deposition temperature of 200 °C, below the decomposition point for both TDMAA and TDMAT, and where both precursors show self-limiting growth, was then selected.