Concerning the excellent CP-EL performance of these chiral near-ultraviolet and deep-blue materials, their CISS effect is further investigated in the device with a configuration of ITO/HATCN (5 nm)/TAPC (50 nm)/TcTa (5 nm)/mCP (5 nm)/(S)-or (R)-PCNTPA (6 nm)/30 wt% BDMAC-XT: CBP (14 nm)/TmPyPB (40 nm)/LiF (1 nm)/Al, in which the chiral deep-blue layer of (S)-or (R)-PCNTPA neat film (6 nm) and the achiral green layer of 30 wt% BDMAC-XT: CBP doped film (14 nm) are arranged as two separate layers to exclude chirality-induction effect. Additionally, a comparable device is also prepared by replacing the chiral layer with a racemized layer of 50 wt% (S)-PCNTPA and 50 wt% (R)-PCNTPA with the same thickness. As depicted in Fig. and, Supplementary Fig. and, all of these devices display nearly identical EL peaks at 520 nm from BDMAC-XT, and outstanding EL performance with high luminance of up to 138400 cd m -2 and a notable ηext,max of 30.7%, indicative of wellbalanced charge carriers and efficient exciton recombination in achiral layer of 30 wt% BDMAC-XT: CBP. Distinct CP-EL spectra peaking at around 520 with symmetrical patterns are detected, which should stem from the achiral green layers rather than the chiral (S)-or (R)-PCNTPA layers. On the contrary, no CP-EL signal is observed in the device with a racemized layer (Fig. and Supplementary Fig. ). These results reveal that the spin-polarized charge carriers are obtained when current passes through the chiral layer, and then get recombined to generate spin-polarized excitons in achiral green layer because of the much narrower energy gap of BDMAC-XT than (S)-/(R)-PCNTPA, rendering green CP-EL from achiral BDMAC-XT. Previous studies demonstrated that a longer spin-dephasing time of the spin-polarized charge carriers can provide a larger gEL value, and the spin-dephasing time also negatively correlates with the current density . Therefore, with the enhancement in current density, the gEL will decline to a stable value . To further validate the generation of spin-polarized charge carriers in above devices, the relationship between gEL and current density is investigated, and the gEL values at different current densities are recorded (Fig. and Supplementary Fig. and). It is found that the gEL value of the device with the kernel layers of (R)-PCNTPA (6 nm)/30 wt% BDMAC-XT: CBP (14 nm) is as large as 2.78 × 10 -3 when the current density is 10 μA cm -2 , which is decreased to 1.77 × 10 -3 at 50 μA cm -2 and 1.18 × 10 -3 at 150 μA cm -2 . Subsequently, along with the further increase of current density to 500 μA cm -2 , the gEL value hovers around 1.18 × 10 -3 . The device containing the layers of (S)-PCNTPA (6 nm)/30 wt% BDMAC-XT: CBP (14 nm) exhibits the same trend, and its gEL value is reduced from -2.51 × 10 -3 at 10 μA cm -2 , to -1.41 × 10 -3 at 50 μA cm -2 and to -0.96 × 10 -3 at 150 μA cm -2 , and finally stabilized at around -1.00 × 10 -3 at 500 μA cm -2 . These findings clearly evidence the generation of spin-polarized charge carriers in the devices, proving that these organic chiral materials have CISS effect.