In this work, we explore the possibility of growing 3C-SiC coatings via a precursor pulsed CVD process using SiCl4 and C2H4 as precursors. A two-step mechanism was proposed for the SiC growth via precursor pulsing. Furthermore, with the precursor pulsed CVD, it is possible to deposit superconformal SiC coatings with a SC between 3.5 and 9 at T= 1200 °C.