The negative photo-response after light illumination indicates a n-type semiconducting behavior for all materials, 51 in line with results from Mott-Schottky analyses (vide infra). The increased current results from a better conductivity due to additional charge carriers generated via light absorption and consequent charge separation, as already mentioned. Therefore, photocurrent measurements allow a qualitative comparison of the available charges for surface reactions. Depending on the materials' molecular composition, two different dynamic responses are observed. For the CTF-02-Bpy material, a fast rise within 0.6 s occurs followed by a slow rise to the steady-state current. In contrast, CTF-02, CTF-02-Bpy 0.33 and CTF-02-Bpy 0.66 are characterized by a photo response curve showing an overshoot of the response signal directly after illumination, which subsequently declines to the steady state. Such a behavior has been explained by the formation of (deeply) trapped states for which the dynamics to reach equilibrium are significantly slower than the time necessary for extraction of free charges from the active material. Interestingly, the material with the strongest overshoot, CTF-02 shows the longest decay time at turn-off. Such a long photocurrent tail is associated with continuous extraction of charges, even more than 10 s after turning off the illumination. In case of CTF-02, not all photo-generated charges are extracted from the material even after 60 s in the dark, which may serve as a reservoir of trapped charges. Beneficial for photocatalysis, this long decay-time demonstrates that those trapped charges can be extracted from the material, and should be accessible for photochemical reactions. Thus trap-mediated recombination, which would result in a short decay-time, is not the dominating pathway over carrier extraction in these CTFs.