The films were deposited in a Picosun R-200 ALD system equipped with a Litmas Remote Inductively Coupled Plasma Source. The system used a base pressure of 400 Pa with continuous N2 (99,999%, further purified with a getter filter to remove moisture) flow through the deposition chamber. The Si (100) and 4H-SiC (0002) substrates were cut into 1.5×1.5 cm pieces and Si (100) was used without further cleaning whilst 4H-SiC was cleaned with RCA-1 (solution of 1 part H2O2 (30%), 1 part NH3 (25%) and 5 parts H2O) and RCA-2 (1 part H2O2 (30%), 1 part HCl(37%) and 6 parts H2O) solutions to remove organic and inorganic contaminants on the surface prior to deposition. The substrates were loaded into the reactor onto a heated substrate holder and the system was heated to 450  C for 120 minutes before each run with a continuous N2 flow (300 sccm) to minimize the oxygen content in the chamber.