In the past decades, the wurtzite form of indium nitride (InN) has been widely investigated for a vast set of applications, such as light-emitting diodes (LEDs) , solar cells and high-speed electronics . In particular, the major revision in its band gap in 2002, from 1.9 to ~ 0.7 eV, has triggered the interest for its incorporation to the metal alloys from group-III nitrides, in which the light emission could be broadened from the ultraviolet to the near-infrared spectral region in LEDs and lasers. In solar cells, this feature is also relevant to enable the utilization of a wider range of the solar emission spectrum to generate electricity. Moreover, the high value predicted (4400 -14000 cm 2 V -1 s -1 ) and experimentally measured (3640-4850 cm 2 V -1 s -1 ) for electron mobility constitute a key property for the future use in electronic devices.