Figure shows the estimated band gap for ZnO nanoparticles from the Tauc plot of (αhv)2 vs. hν. By extending the straight section to the energy axis at = 0, the Eg can be found. With the help of this Tauc plot, it is possible to determine that the mode of transition in AL-ZnO is direct (n=1/2) (Bindu & Thomas, 2017). The semiconductor behaviour of ZnO NPs with a wide band gap is represented by the band gap energies, which show that an electron must be promoted from the valence band to the conduction band and allowed to conduct electricity, requiring about 4.37 eV of energy. This value is somewhat higher than the bulk band gap of ZnO (3.37 eV), which is a consequence of quantum confinement effects and could be brought on by strain during the formation of ZnO nanoparticles. Additionally, greater transparency and UV absorption potential are indicated by a wider band gap (Bindu & Thomas, 2017).