In this work, we have demonstrated the capability to grow 3C-SiC coatings on graphite via pulsed CVD. SiCl4 and C2H4 were pulsed alternately into the growth chamber with each precursor pulse being separated by a H2-purge. We suggest a mechanism based on deposition of Si from the SiCl4 pulse followed by carburization to form SiC during the C2H4 pulse. Superconformal SiC growth was achieved by the pulsed CVD process in trenches with ARs ranging from 1 to 4 at 1200 ℃. Continuous CVD at the same temperature rendered subconformal SiC. We ascribed this superconformal growth behavior to enhanced Cl termination in the opening of the trench as a result of the pulsed precursor supply.