The success of In(triaz)3 and Ga(triaz)3 led us to synthesise a set of structural analogues by employing combinations of isopropyl, sec-or tert-butyl alkyl groups, both symmetrically and unsymmetrically, on the triazenide ligand. These compounds were all volatile (80-120 C, 0.5 mbar), showed very good thermal stability (200-300 C) and a majority with one step volatilisation cure (Figure and). This provides a range of compounds in which the thermal stability and steric bulk of the precursor can be tailored to strategic choice. The same set of structural analogues was also synthesised for Al, rendering a total of six tris(1,3-dialkyltriazenide)aluminum(III) compounds. Especially when tert-butyls, or a mixture of sec-and tert-butyls were used, these Al triazenides showed sublimation temperatures of 90-125 °C with no residual masses by TGA (Figure ) and thermal stability >200 C. Attempts to deposit aluminium nitride (AlN) using these triazenides and ammonia, both with and without plasma activation, showed limited success, poor repeatability, and primarily aluminium oxynitride films. 43 We have since extended this initial chemistry to group 11, 12 and 14 metals. Using the 1,3-di-tertbuyltriazenide ligand, divalent Ge, Sn and Pb compounds were synthesised. Similar to the group 13 triazenides, these compounds showed mononuclear structures with the triazenide ligand in a chelating binding mode to the metal centre (Figure ). The Volatile and thermally stable group 11 triazenides were also synthesised. that rivalled the previously reported precursors bearing M-N bonded bidentate ligands.