In eq. 1, C 0 is a capacitance, T is the temperature, k B is the Boltzmann constant, Φ 0 is the target potential for the potentiostat, Φ is the 'effective' electrode potential at time t, τ = RC 0 is a relaxation time, N is a Gaussian random number with mean 0 and standard deviation 1. The FDT approach was developed to describe the charges and potentials in classical simulations. However, in electronic structure codes such as GPAW the electron density is -dn. To avoid confusion, we prefer to refer to the charge on the electrode as excess electrons. The electrode potential, Φ(t), is here also dependent on time, and we estimate it with the solvated jellium method, as explained in the following. Figure Other works using VASPsol find the distribution function to be a Gaussian as well, see for example. Our simulations are locally non-neutral and so the interface is charged given the potential. SJM controls the electrochemical potential via charging of the electrode surface in the simulation cell. With this method, the cell is overall charge-neutral; the charge at the electrode is counterbalanced by a background charge placed uniformly next to the explicit solvent, as shown in Figure ). This setup with charge-countercharge creates an artificial potential profile between the electrode and the jellium part. SJM screens this electric field by filling the region above the explicit atomic system with a dielectric continuum, which screens the large electric field using a modified version of the implicit solvent method in Ref. The setup of SJM is illustrated in Figure . In the version of SJM we implemented for this work, the charge of the scheme is given by equation 1 and the electrode potential is equilibrated taking inot account fluctuations and a finite dissipation time. To have a starting value for the charge, and speed up the equilibration, one can pre-optimize the structure with the standard SJM in potential mode, where the given potential is set to Φ 0 . An outline of the workflow of the FDT-SJM utilized for this work is displayed in Scheme 1.