The tooling factor of each chemical was calibrated by checking the film thicknesses by profilometry inside the N2-filled glovebox (DEKTAK XT profilometer). Three quartz crystal microbalances (QCMs) mounted on top of the vapor sources allowed us to monitor the deposition rate of each source and control the composition. The substrate temperature was maintained at around 18 °C. The distance between evaporator sources and substrate holder is around 35 cm. The perovskite films were post-annealed at 120 °C for 20 min. After cooling down to room temperature, 25 nm of C60 and 8 nm of BCP were sequentially evaporated on the perovskite film for small-scale devices, whereas 40 nm of C60 and 15 nm of BCP were deposited on 9.46 cm 2 samples. A 100 nm layer of Cu was lastly evaporated in the same perovskite deposition system.