The results of this study were evaluated considering the presence of lead (Pb). It is widely recognized that Pb is a toxic heavy metal that poses severe health risks to humans and is detrimental to all living organisms, including plants and animals . The output parameter such as open-circuit voltage (V oc ), short-circuit current density (J sc ), fill factor (FF), and eta (η) for different Pb-based absorber PSC is shown in Table . The output parameters for lead-free absorber PSCs are shown in Table . In this phase of the study, the P+PIN+ structure was implemented. A thin P+ layer was utilized as a back surface field (BSF) to create near-ohmic contact and enhance cell performance by reducing surface recombination velocity (SRV). Additionally, a thin intrinsic layer of absorber material was employed to form an interface between the absorber and the N+ layer, effectively minimizing recombination losses. The P+P layer was engineered by grading the materials based on doping density, whereas the N+ region was achieved by increasing the doping concentration .