Many technologies, including energy conversion and electronics, are dependent on metals deposited onto substrates. The resulting morphology of the metal on the substrate determines the possible application of metal-substrate combinations . For example, metals which wet a surface and can be deposited in a flat, non-island morphology, are needed as conducting metals for interconnects in semiconductor devices . This is particularly relevant as TMDs have shown promise as diffusion barriers for Cu in CMOS interconnect structures, allowing for atomically thin barriers which can maximise the volume of the interconnect metal in vias. This is important for next generation technology nodes such as Gate-All-Around and Complementary Field Effect Transistors, as it would keep line resistance low while allowing downscaling of CMOS structures . Furthermore, metals which do not wet the surface, but rather form 3D clusters when deposited, have applications in catalysis due to their large surface to volume ratio, providing a large number of active sites . While TMDs have shown promise for the hydrogen evolution reaction , the basal plane of the monolayer remains practically inert . Augmenting TMD monolayers with metal nanoparticles may provide a path to increase the capabilities of TMDs as catalysts . Therefore, strategies are needed to predict morphology of deposited metals on TMDs which can enable next generation interconnects or active catalysts for energy conversion chemistry.