Moreover, one can observe that, upon switching on and off the C 7 H 8 , the change of orientation from random to highly <111> seems to occur instantaneously, evidenced by the absence of transition layers shown in Figure where the interfaces of randomly/highly <111>oriented and of highly <111>-/randomly oriented interlayers are depicted. In a regular scenario, the growth direction of the grains would be slightly directed by the immediately underlying layer in the beginning of growth and it would gradually be taken over by the fast growing directions . Therefore, a transition layer consisting of mixed grains with various orientations is often expected between different layers. However, the absence of such layer in our 3C-SiC multilayer samples indicates that the steering effect of C 7 H 8 is so strong that the growth towards <111> direction is instantly started or halted upon activating or deactivating