In the following subsections, we discuss typical calculations on a variety of nanowire geometries, configurations, and boundary conditions that can be performed with HADOKEN. Note that the parameters used as input to set_input_parameters.m are consistent with the reduced coordinates and scaling relations discussed in Section 2. Specifically, the first input variable, vector_of_side_lengths, contains the side lengths of each interface expressed in units of 10 nm. The second input variable, vector_of_V0, contains the band edge energies in units of eV. The third input vector, vector_of_masses, contains the effective mass of each nanowire region in units of m 0 , and the fourth input vector their static dielectrics. If a Fermi-pinning constraint is being enforced, the fifth input parameter, epsilon_F, specifies the Fermi-level pinning in units of eV; otherwise, the last input required by set_input_parameters.m is the number of triangles used to discretize the NW cross-section in the finite element procedure. The doping density function used in the set_doping_density.m routine can accept any functional form and must be in units of 10 18 cm -3 . For instance, the user wanting to incorporate a doping density function that specifies which layers of the heterostructure are doped can use heaviside_core_schrod.m (see Section 3) as input to set_doping_density.m.