Finally, the thermoelectric figure of merit (ZT) was calculated using the ThermoPlotter software by combining the calculated electronic transport properties and lattice thermal conductivity. The predicted in-plane and out-of-plane n-type ZT for charge carrier concentrations in the range of 10 18 -10 21 cm -3 and temperatures between 100-1000 K are shown in Figure . This temperature range was chosen based on previous experimental work in which Y 2 Ti 2 O 5 S 2 was shown to be thermally stable up to 700 °C in air and under an N 2 atmosphere. z direction (b) for carrier concentrations between 10 18 -10 21 cm -3 and temperatures between 100-1000 K. This analysis was performed using ThermoPlotter. The differences in the in-plane and out-of-plane ZT values is striking, with the maximum ZT along the z direction barely reaching 0.01 at the highest temperature/carrier concentration pairing. On the other hand, the maximum in-plane ZT is predicted to be 1.18 at T = 1000 K and n = 2.37 × 10 20 cm -3 . While this is comparable to current state-of-the-art n-type thermoelectrics such as PbTe, it is worth noting that the required charge-carrier concentration is on the higher end of what is achievable for a semiconductor. Table lists the maximum ZT and associated carrier concentrations, power factors, and lattice thermal conductivities at 300 K, 600 K and 1000 K. Although the power factor is greater at 600 K than at 1000 K, the comparatively higher lattice thermal conductivity at this temeprature leads to a smaller overall ZT.