Thin film LNMO electrodes were fabricated using an radio frequency sputtering technique (K. J Lesker, Germany) under argon protected atmosphere. The process initiated with plasma ignition under an argon flow at 10 mTorr at a forward power of 40 W. The power was then gradually increased to 55 W at a rate of 0.033 W/s for the deposition of the LNMO layer, conducted at a reduced Ar pressure of 3 mTorr. Prior to deposition, a 10 minute pre-sputtering step was employed. After the deposition, the samples underwent an annealing process in air at 700 °C for one hour. The LNMO material was layered over a 70 nm thick Pt current collector. There is also a 20 nm TiO 2 interlayer between the Pt layer and the SiO 2 /Si wafer substrate to ensure adhesion.