Next, we examine band broadening in the calculated EBS to assess the extent of alloy scattering of electronic carriers. We observe significant broadening (smearing) in the valence band beyond ⇠0.5 eV from the band edge (shown only for x = 0.1 in Figure ). Since we are interested in n-type transport, we focus on the broadening in the CB, particularly around the band edges at G and Z. For compositions between x = 0.35 0.65 (EBS for alloy composition x = 0.65 is shown in Figure ), we observe weak band broadening, which suggests that the electronic carrier mobility in this composition range will remain largely unaffected due to alloy (disorder) scattering. As such, alloy compositions x = 0.35 0.70, which preserve the Bloch character of the CBs around G and Z, are optimal for minimizing alloy scattering of carriers. In particular, for x = 0.35 and x = 0.45, the CBs near G and Z are almost unperturbed by the alloy disorder, for reasons that are not immediately clear to us. Fortuitously, the compositions where both band convergence is achieved and alloy scattering is minimized overlap.