We have confirmed the ability to predict ground state PDOS from the Si-K edge across the entire test dataset. To explore which regions of the Si-K edge, namely how large energy range from the spectral threshold, are crucial for achieving high predictability, we assessed the accuracy of predicting ground-state PDOS while varying the range of the Si-K edge used as input. The results are shown in Fig. . As depicted in Fig. , the range of Si-K edge from -1 eV to 19 eV was initially divided into four sections with 5 eV windows: -1 eV to 4 eV, 4 eV to 9 eV, 9 eV to 14 eV, and 14 eV to 19 eV. The 0 eV corresponds to the spectral onset for each spectrum. Subsequently, we examined the change in the prediction accuracy of the ground state PDOS when incrementally expanding the input Si-K region by 5 eV. Resulting changes in the prediction accuracy are shown in Fig. ). From Fig. (b), it can be observed that progressively expanding the input Si-K edge region results in a decrease in the MSE for both s-PDOS and p-PDOS, indicating an enhancement in predictability. However, it can also be observed that additionally including the spectral region from 14 eV to 19 eV as input does not contribute to the improvement in prediction accuracy. This means that, when predicting the ground-state PDOS in the range of -15 eV to 15 eV with respect to the Fermi level, the region from the onset of the Si-K edge to 15 eV is more critical. It has been known that the excited electronic structure tends to be localized to the excited atom, resulting in a shift of PDOS towards the lower energy sides compared to the ground state, due to the formation of a core-hole. Therefore, it is reasonable that the spectral feature in the lower energy part of ELNES/XANES is more important for PDOS prediction.