To impart new properties to oxide semiconductor materials, it is often necessary to introduce dopants , preferably in a wide range of concentrations. Such an opportunity is provided by cubic solid solutions of zinc oxide with a rock salt structure (Fm-3m), which after synthesis can be quenched from high pressures and high temperatures in a wide range of concentrations of the second component. The application of high pressures is required in order to induce the phase transition from the initial wurtzite (P6 3 mc) zinc oxide (w-ZnO) to cubic rock salt polymorph (rs-ZnO). As shown previously, the stability of rs-Me 1-x Zn x O solid solutions depends primarily on the properties of the Me 2+ cation, in particular its tendency to have an octahedral environment .