In this work, we employed the generalized AMBER force field, GAFF, to build an MD molecular model for a DGEBA-DDS epoxy system. Our model is based on a robust block-like fragment scheme for the development of RESP partial atomic charges. Thanks to the careful choice of fragments, capping groups and charge constraints, the model encompasses DGEBA monomers of any length n and can describe both primary-and secondary-amine cross-linking reactions of the DGEBA-DDS system. By employing auxiliary annealing cycles, our pure-MD curing protocol can attain an almost completely cross-linked system (≥95%).