We have previously hypothesized that steering the deposition chemistry fully to the surface could be an alternative route for low temperature CVD of InN as it could circumvent the problem of the slow kinetics in the gas phase decomposition of NH3. A CVD approach fully relying on surface chemistry is atomic layer deposition (ALD), which uses a sequential supply of the precursor gases to make the deposition chemistry surface controlled. ALD of crystalline InN films has been demonstrated using trimethyl indium (TMI) and either nitrogen plasma or NH3 plasma. In addition, complex precursors with chelating ligands with In-N bonds have also been employed to prepare polycrystalline or epitaxial InN 25 with NH3 plasma.