We produced the acoustofluidic chips utilizing cleanroom processes. Microfluidic channels (192.6 ± 10µm depth, 198.0 ± 5µm width of the liquid channel and 100.3 ± 2µm width of the air channel) were etched into a silicon wafer (500 ± 10µm thickness). First, we used photolithography (Resist: S1828, Shipley, 4000 rpm; Developer: AZ 351B, Microchemicals, development time 30 s) to transfer the designs from a chrome mask onto the silicon wafer. Next, we put the wafer into an inductively coupled plasma deep reactive ion etching (ICP-DRIE) machine (Estrellas, Oxford instruments). With a modified high rate process, we achieved a selectivity (ratio of etch rate between photoresist and silicon) of around 220 and straight channel walls with an angle of ∼ 87.7 • . We increased the passivation time, decreased the pressure during the etching step and decreased the ICP and HF power allowing us to achieve significantly improved aspect ratios compared to current literature. Then, we anodically bonded a glass wafer (700µm thickness) to the silicon wafer. Finally, we diced the wafer stack into small rectangles (16 mm x 15 mm) employing a wafer saw (DAD3221, Disco corporation). Fused silica capillaries (164 ± 6 µm outer diameter, 100 ± 6µm inner diameter, Molex) were inserted into the sides of the chip and fixed with a two-component glue (5 Minute Epoxy, Devcon). A piezoelectric transducer (10 mm length, 2 mm width, 1 mm thickness, Pz26, Meggitt Ferroperm) was glued to the backside of the devices using conductive epoxy (H20E, EPO-TEK). Copper cables (0.15 mm diameter) were attached to the piezo with conductive silver paste and glued to the chip with instant glue to increase mechanical stability.