Several studies have been performed to deposit highly oriented 3C-SiC by tuning the deposition conditions or by utilizing different CVD techniques. Tu et al. have reported the growth of primarily <110>-oriented SiC at T ≥ 1450 ℃ and P tot ≤ 10 kPa by thermal CVD , whereas both primarily <110>-and <111>-oriented SiC coatings were prepared at various conditions by Zhang et al. via laser CVD . Since the preferred growth orientation depends on the process conditions, a high process stability is required to achieve a constant orientation over the whole substrate and during the whole coating process. To switch between orientations, the growth process would need to be paused and the parameters would need to be changed before the growth continues. In the abovementioned studies, the change of preferred growth orientation was controlled by tuning the deposition temperature and pressure, suggesting that to produce SiC multilayer coatings with different orientations the deposition conditions need to be adjusted constantly.