The switching barrier is similar in the two materials in spite of their different topologies. Our simulation accuracy is not sufficient to distinguish between them, but difference could be expected due to changes in connectivity, stiffness, or the interaction between neighbouring linkers. The low barrier for switching combined with the high attempt frequency indicates that it will occur at all technologically relevant temperatures, with possible implications for the material properties. Structural dynamics has been shown to affect the interaction between adsorbed molecules and the linkers and we will show in the following that it can also affect the electronic structure.