In particular, we investigated the brush growth kinetics as a function of the reducing agent concentration, which showed a non-trivial influence: while the reducing agent concentration controls the polymerization speed in ARGET-ATRP, in this configuration it also counteracts the effects of oxygen. The fastest brush growth was observed with 1 mM of ascorbic acid, which yielded a growth rate of 70 nm h -1 on average. This method was successfully applied to an entire ⌀10 cm silicon wafer.