One of the most recent proposals for removal of SU-8 is laser ablation followed by an oxidizing plasma . Han et al. adopted this method after finding unsatisfactory results from burning and ashing at temperatures ranging from 500 • C to 1000 • C. Most SU-8 removal methods rely on highly oxidizing conditions. Unfortunately, these conditions would cause damage on a wide range of materials of technological interest, limiting the applicability of the technique. Examples of these methods are various types of burning, oxidizing plasmas , piranha etching , and ozone exposure . Certain molten salts have also been found to completely remove SU-8 at temperatures above 300 • C, unfortunately, these extreme conditions are also incompatible with a wide range of applications. Other proposed methods are mostly mechanical, such as water jetting , bead blasting , CO 2 at extreme conditions , or plasma and ion beam sputtering. Organic solvents can sometimes lift off the photoresist from the substrate, at least partially . This process is more effective when there is poor adhesion with the substrate, little resist cross linking, and specially if usage of a sacrificial layer is possible. A disadvantage of all the mechanical methods mentioned above is that the photoresist removal is often incomplete, inhomogeneous, and irreproducible, as it depends on the geometry of the resist features among many other factors. Thus a chemical method to quickly and completely dissolve the cross-linked resist would be highly desirable. Piranha etching and oxygen plasmas meet this requirement but are highly oxidizing and thus incompatible with a wide range of materials. Without prior treatment, a 5 hour immersion in fuming sulfuric acid of nickel parts electroplated through an SU-8 mask results in cracking of the photoresist into small pieces, resulting in at least partial removal after rinsing with solvents . Unfortunately, in this case the resist is cracked rather than dissolved, and thus removal is often incomplete. Here we show that if the SU-8 is pretreated with a water based dimethylamine solution, the resist immediately dissolves after subsequent immersion in sulfuric acid, leaving no residues and allowing for very short exposures to the acid.