We show that the GPC in the ALD process for GaN from TEG and NH3-plasma can be increased by adding a reactive pulse, providing energetic species, reactive species, or both to the surface, between the TEG pulse and the NH3-plasma. The reactive pulse shows no effect on the material properties of the deposited films. We suggest that this is explained by the removal of the ethyl ligands by the reactive pulse, rendering a hydrogenterminated surface, which is more favored for nitridation. We also show that a reactive pulse can allow for film deposition with thermal NH3, but only affords X-ray amorphous films of very low quality.