In this work, we demonstrate a defect-healing mechanism based on BCP inks that selforganize into a self-assembled BCP film and then graft to the substrate and generate a 1:1 chemical pattern. We use our recently developed high throughput synthetic platform for synthesizing thiol-modified polystyrene-block-poly(glycidyl methacrylate) PS-b-PG(B-r-C) BCPs to generate a model BCP that self-assembles into lamellae with 𝐿 " = 19 nm. The PS-b-PG(B-r-C) copolymer architecture decouples surface energy and thermodynamic properties that allows for the synthesis of a library of copolymers with varying pitches but equal surface energy between the PS and PG(B-r-C) blocks, which is necessary for DSA via thermal annealing. By synthesizing copolymers with precise 𝑁 and choosing specific moieties for the PG(B-r-C) block, BCPs with 8 nm ≤ 𝐿 " ≤ 20 nm can be obtained. In addition, the PG(B-r-C) block contains hydroxyl moieties on the side chain of each repeat unit that can graft to Si substrates. We call this grafting process "self-brushing" as the BCP serves as the brush molecule. Previous work has shown that the self-brushing behavior of the BCP can be leveraged in DSA applications to eliminate the need for a neutral background layer on the chemical guiding patterns. We use atomic force microscopy and scanning electron microscopy (SEM) to visualize the self-brushed monolayer and utilize a staining mechanism via sequential infiltration synthesis (SIS) to increase the contrast between the polymer domains for better visualization of the organic monolayer. We show how the self-brushing mechanism works both on a pristine native silicon oxide substrate, which is preferential for the random copolymer block, as well as a non-preferential substrate comprised of an end-grafted random copolymer brush with a tuned composition. The non-preferential substrate allows interpenetration of the BCP chain and results in similar self-brushing as on the native oxide substrate. From there, we show how the self-brushing mechanism can be used in DSA to self-heal defects both in the presence of a backfilled non-preferential brush background as well as on pristine Si background patterns. The self-brushing of the BCP to the substrate generates a polymer monolayer that retains the phase separation of the original BCP film. This 1:1 chemical guiding pattern enables healing of the DSA defects on subsequent application of a BCP film. While we limit our discussion to one model BCP system, we believe that the BCP ink mechanism will scale down to sub-10 nm dimensions.