Previous attempts of doping ZnO with Sb using hydrothermal approach did not result in p-type conductivity . The purity of crystals grown by vapor transport is superior in comparison with hydrothermal method. However, it is difficult to synthesize doped crystals because impurities impede the growth process in that case. Moreover, accessibility of dopant source might be an additional challenge. Instead of growing doped ZnO single crystals, there were attempts of introducing P 22 and Sb 23 via annealing of prepared single crystals in the vapor. An alternative approach of introducing dopant by ion implantation was realized for As 24 . The problems of the flux method are similar to the hydrothermal method and deal with incorporation of impurities from the flux 25 . The growth of bulk ZnO crystal from the melt could be preferential compared to other options but is complicated by the fact that the triple point of ZnO is 2248(25) K and 1.06 bar.