These results show that 1 is a thermally stable precursor and has favourable properties for use in ALD of GaN. To study if 1 could be used in self-limiting deposition of GaN, ALD experiments on Si (100) substrates were undertaken using varied pulse times for 1 and NH3 plasma whilst the temperature was maintained at 200 °C. The GaN growth per cycle (GPC) saturates at 1.4 Å/cycle when the pulse time of 1 is 4 s or longer (Figure ). The GPC saturates at the same value for NH3 plasma when pulse times of 6 s or longer were used. This is indicative of a selflimiting growth and surface chemistry between 1 and NH3 plasma. The growth per cycle was constant between 130-250  C when using a 4 s pulse time for 1 and 9 s NH3 plasma pulse time (Figure ). As the bubbler temperature was set to 120  C, lower deposition temperature was not conducted due to the risk of condensation of 1 on the substrate. Reactor temperatures of 250  C resulted in a decreased GPC, indicating desorption of the precursor from the substrate. This GPC is roughly 3-5 times that of previous reports of GaN plasma processes with TMG/TEG. It can be noted here that the wurtzite GaN lattice has a c lattice constant of 5.182 Å. To obtain such a unit cell, three monolayers are required (Ga source, N source followed by Ga source) which corresponds to 1.5 ALD cycles and therefore the theoretical maximum growth per cycle is approximately 3.45 Å/cycle. The growth of 1.4 Å/cycle obtained with the M-N bonded precursor 1 is lower than the theoretical growth making it reasonable despite its higher growth rate compared to other GaN processes. The films deposited in the temperature window with constant GPC rendered crystalline GaN with a preferred (002) orientation on Si(100) (Figure ). The intensity of the XRD peaks, which is especially clear from the GIXRD measurements (Figure ), increases with higher deposition temperature suggesting that film crystallinity increases with temperature. The (002) plane is present in both the -2 XRD and the GIXRD indicating that grains tilted with respect to the substrate normal are present in the film. The stress and strain in the 70 nm GaN films were estimated from the GIXRD measurement by a -sin 2  plot, Figure . The positive slope of the fitted line to the plotted data is indicative of tensile strain of the film. The strain was obtained from the slope (7475.61 ppm) and gives a value of 0.00747561. This corresponds to roughly 0.75% of tensile strain. To calculate the stress in the film, the Young's modulus (E)