Here, we use DFT with machine-learned Hubbard U corrections to assess ZnTe and CdSe as prospective tunnel barriers for the InAs/Al interface. We conduct simulations of bulk ZnTe and CdSe, bilayer (110) interfaces of InAs/ZnTe, InAs/CdSe, CdSe/ZnTe, and (InAs,ZnTe,CdSe)/Al, as well as tri-layer (110) interfaces of InAs/Al with a ZnTe or CdSe tunnel barrier of varying thickness. For ZnTe, the PBE+U(BO) results are verified by comparison with published angle-resolved photoemission spectroscopy (ARPES) data.