85-1324). The relative ratio of surface energies for (003), (102), and (014) planes is 1.91: 2.36: 2.36. This indicates that the Sb-L thin film, dominated by (003) and (006) planes, has lower surface energy than that of the Sb-H thin film. With the increase of the substrate temperature, the (102) and (014) diffraction peaks with higher surface energies become more prominent in the Sb-H thin film. The Sb2Se3 thin films were synthesized by subjecting metallic Sb thin films to selenization at 325 o C for 30 min in a sealed tube furnace under Ar protection. Figure displays the XRD pattern of the as-prepared Sb2Se3 thin films, which can be well indexed to the standard orthorhombic Sb2Se3 phase (JCPDS 15-0861). Apart from the diffraction peaks of FTO and Au, all other peaks belong to the Sb2Se3 phase, indicating the formation of a single phase without secondary phase formation. In addition, both samples display a preferred [hk1] orientation. There is no noticeable difference observed in the XRD patterns between Sb2Se3-L and Sb2Se3-H thin films, implying that the orientation of metallic Sb films has a negligible impact on the crystallographic orientation of Sb2Se3 thin films. Researchers have successfully prepared numerous [hk1]-oriented Sb2Se3 thin films through the postselenization of metallic Sb thin films at various temperatures. These Sb thin films, with initially unknown crystal orientations, were produced using diverse methods such as electrodeposition, sputtering, and e-beam evaporation. They found that the crystal orientation evolution of Sb2Se3 thin films during postselenization is primarily governed by selenization kinetics rather than the pristine crystal orientation of the Sb thin films. During the selenization process, Se atoms reach the surface of the Sb thin film and rather selenize the surface than diffuse deeper into the Sb film. This results in the formation of (Sb4Se6)n ribbons, allowing continuous selenization along the [001] direction and promoting the perpendicular growth of Sb2Se3 films on the substrate. This finding explains the formation of identical crystal orientations in Sb2Se3-L and Sb2Se3-H thin films, despite the different exposed surfaces of their Sb precursors. Sb2Se3-H thin films was determined using profilometer measurement (Figure ), revealing that the thickness of the bottom compact layer for both samples was identical, around 540 nm.