eV and 399.6 eV respectively. The O 1s peak at 531.8 eV is quite symmetric and corresponds to O-Ti-N bonding and possibly O-Al-N with an excludable minor contribution of an XPS peak possibly corresponding to oxygen bonded to carbon. TDMAT is highly reactive with water and oxygen exposure, which can lead to unwanted reactions and contamination during film growth, complicating the deposition process. This could possibly explain the O contamination (even though low, below 5 at.%) in almost all the films, e.g., as shown in Fig. . In contrast, TDMAA is only slightly air sensitive and more stable due to its dimer structure, which protects the aluminum atom from rapid reactions with moisture and oxygen. This stability allows TDMAA to maintain its integrity longer during deposition.