) showed cubic In2O3 as the only crystalline phase except the Si substrate. In addition, the films are polycrystalline with a preferred (222) orientation. XPS analysis of the films showed the C impurities range from 0.8 to 3.5 at. % and N impurities are below the detection limit. As summarized in Table , XPS analysis also shows the films are oxygen deficient, which is comparable to literature. The elemental composition of the films displayed in Table indicates that higher deposition The results above shows that In2O3 can be deposited from 4 and water in an ALD process.