Boron is the element which is adjacent to the carbon having one valence electron less than carbon atom. Boron is mainly presumed for the substitutional doping because the size of boron (180 pm) is almost close to that of carbon (170 pm). As the electronegativity of B is lower than C, the charge polarisation exists between boron and carbon. Even after the doping of boron into graphene lattice, the structure of graphene is retained due to the fact that the boron atom usually undergoes sp 2 hybridisation . When the boron is chemically bonded into the graphene framework, then it incorporates defects in adjacent sites and the p-type semiconductor is favoured in B-doped graphene because the number of valence electrons in boron is lesser than carbon. As a result, charges are not uniformly distributed that stimulate the charge transfer between the neighbouring carbon atoms and hence improvise the electrochemical activity. The electron deficient character of B causes p-doping and makes the downshift of Fermi level which is nearer to the Dirac point. Additionally, theoretical calculations suggested that there is a band gap of 0.14 eV by B-doping . Therefore, the nature of graphene is transferred from semi metal to semiconductor. The breaking of symmetry in the graphene lattice is considered to be reason for the opening of band gap which is more pronounced if the boron atoms are present at sublattice positions. It has been reported that there is serious influence on the thermal conductivity of graphene by B-doping. For instance, 60% thermal conductivity of graphene is reduced by only 0.75 at. % of B atoms . Since B-C bond is longer than a C-C bond in pristine graphene, the lattice parameters are mildly changed .