Figures ) and (c) show the relationship between the input range of Si-K edge and the prediction accuracy for each region of s-PDOS and p-PDOS, respectively. The s-PDOS mainly consists of valence band contributions, i.e., region 1 and 2, and its direct information should be absent in the Si-K edge due to the selection rule. It can be observed that the prediction accuracy of such s-PDOS is slightly changed by the spectral region, and the highest accuracy for these regions is achieved when using the Si-K edge from 9 eV to 14 eV. As previously mentioned in Fig. ), the highest prediction accuracy for the s-PDOS was achieved by utilizing the Si-K edge in the 9 eV-14 eV. Those two results indicate that the 9 eV to 14 eV region encompasses valuable information for predicting s-orbitals throughout the entire valence band. At the present time, the underlying reason cannot be elucidated. However, as discussed in Fig. (b), there are two peaks at the Si-K edge, and it is implied that the second peak around 13 eV may contain valuable information beneficial for predicting the s-orbital in the ground state.