The Ga 3d binding energies E d b computed within the DFT+A-1 /2 framework, as presented in Table , show substantial QP shifts towards higher binding energies. These shifts vary depending on the group-III cation and the polymorph, ranging from 7.0-7.5 eV for Ga 3d and 0.0-2.6 eV for In 4d. The relatively large influence of the atomic geometry may be a result of the oxidation stage of the Ga and In atoms, respectively. The binding energy is determined using a DOS plot in Figs. and, taking a weighted average over the main peak with some deviations of the order of the half band width. Since SOC effects were not included in the calculations, the significant splitting and the expected band dispersion associated with it are not observed. Satellite structures, such as the Ga 3d peak observed at approximately 20.2 eV, are present, potentially arising from hybridization with O 2s states.