We predict that low concentration doping of Al/Ga at B site in h-BN breaks its inversion symmetry. Because Al/Ga atoms are protruded out of the h-BN plane, which induce local electric dipole moments along c-axis. The induced P sp 3 are comparable with that of other known FE materials. Moreover, the P sp 3 can be switched by passing Al/Ga through the h-BN plane. We also show that ferroelectricity can persist in these doped h-BN down to trilayer, allowing significant thickness reduction. Note that bulk h-BN is a non-piezoelectric material due to the inversion symmetry. However, surprisingly, we find a huge negative piezoelectric coefficient d 33 in these doped h-BN, e.g. -24.214 pC/N for Ga 0.125 B 0.875 N, which is about 5 times larger than that of pure w -AlN and comparable to Sc-AlN, because of their quite low C 33 in the van der Waals layered structure. Interestingly, these doped h-BN materials can also exhibit an electric auxetic effect. As h-BN layers are widely used in 2D materials based devices as substrate or dielectric layer for SiO 2 /Si substrate, our findings can broaden its applications to FE memories or piezoelectric energy harvesting.