The Chemical Vapor Deposition is one of the techniques to synthesize nanoparticles. It allows the synthesis of nanoparticles on the surface of 3D substrate . The deposition process takes place in three steps, initially volatile precursor is introduced to the reactor chamber by a carrier gas (like H2, Ar or N2). This process requires volatile silver containing precursors that decomposes thermally to produce silver. Commonly, silver nitrate, silver acetate, or silver organometallic compounds like silver (I) penta-fluoro-propionate is used as a precursor in CVD methods. After this step, the precursor vapors are adsorbed on the substrate surface and intermediate products are formed, followed by formation of layers. Lastly, decomposition of products occurs on the heated substrate, which is followed by nucleation and growth of layer . The factors that affect the quality of the nanoparticle produced are the methods used for precursor delivery, pressure in reactor chamber, chemical properties of carrier gas, rate of deposition, substrate surface temperature and duration of deposition . The type of precursor used seems to be the most significant factor in this method. The CVD precursor should have the following characteristics: it should be appropriately volatile to achieve highest concentration of the precursor in vapor form, the precursor should be thermally stable to avoid premature degradation during transportation of vapors by carrier gas (like H2, Ar or N2), it should be able to thermally decompose on the surface of the substrate leading to the deposition of desired materials, it should be inexpensive and simple to synthesize and have very low toxicity [70].