Ferroelectric (FE) memory devices including FE tunnel junctions (FTJs) and FE field-effect transistors (Fe-FET) are identified as exciting platforms to realize braininspired and low-power neuromorphic computing . Developing new FEs that are compatible with complementary metal oxide semiconductor (CMOS) process, has been a long-lasting ambition, both technologically and scientifically. Unfortunately, the wellknown perovskite oxide FEs such as PbZrTiO3 (PZT) are not CMOS compatible and generally show a critical thickness limit below which ferroelectricity disappears due to the unscreened depolarization field . In this regard, the recent discovery of ferroelectricity in CMOS compatible doped w -AlN is highly promising because of its high polarization and Curie temperature . w -AlN posses large spontaneous polarization (130 μC/cm 2 ) when hexagonal AlN is considered as paraelectric phase . However, because of the high coercive field, which is larger than its dielectric breakdown voltage, FE switching in pure w -AlN is impractical. Promisingly, the substitution of Al by Sc or co-doping of Li and V/Nb/Ta, is an effective way to lower the polarization switching voltage . Recently, ferroelectricity with large polarization (125 μC/cm 2 ) was demonstrated in Boron substituted w -AlN thin films , with Boron concentrations in the range of 2% -15%. However, a degradation in the ferroelectric response has been reported for B concentrations above 15%. Unlike AlN, BN has a centrosymmetric planar hexagonal crystal structure, and therefore h-BN is non-FE and non-piezoelectric. In this * mda.alam@tyndall.ie; michael.nolan@tyndall.ie paper we pose the research question: can substitution of boron by another trivalent element be used to engineer ferroelectricity and piezoelectricity in h-BN by breaking its centrosymmetry? h-BN is a layered material with high thermal and chemical stability, widely used as dielectric substrate and protective coating layers in 2D materials based devices e.g. graphene/h-BN FET . Due to its van der Waals layered structure, h-BN can be synthesized as few-layer or even single-layer sheets. This makes it compatible with the scaling trend in CMOS technology, where thinner layers are desired for miniaturization and improved device performance. Therefore, engineering ferroelectricity in h-BN nano-films can integrate graphene-like high-mobility materials into FeFET, where the absence of dangling bonds at the interfaces protect their individual properties . Also for FTJs, FE h-BN nano-films can be an ideal FE tunnel barrier material due to their uniform atomic thickness . Moreover, because of its compatibility with other 2D materials, piezoelectricity of FE h-BN can be ideal for Piezotronic nano-devices -for example, strain-controlled transistors or strain-gated memory devices, where mechanical strain is used to modulate the electrical behavior and control device functionalities .