To induce spontaneous polarization and piezoelectric response, we introduce a doping approach by substituting B atoms in h-BN with Al or Ga atoms, resulting in a combination of polar w -AlN and w -GaN within the h-BN lattice structure. We consider low doping concentration below 12.5% to keep the layered structure of bulk h-BN, since above this concentration, a phase transition from the layered structure to the wurtzite structure can occur . Furthermore, our intention is to maintain the intrinsic van der Waals layered structure of h-BN without fully connecting all the layers through the dopants. Interestingly, our optimized structures show that Al and Ga atoms protrude out of the otherwise flat h-BN monolayer (see Figure ). The computed thickness, h shown in Table , of the monolayer measures the extent of the protrusion. This results in a local electric dipole moment along cdirection. Our calculated spontaneous polarization (P sp 3 ) using the Modern theory of polarization based on Berry Table . Hmix is the mixing enthalpy of the protruded doped h-BN structures. Average interlayer spacing (t layer ) defined as lattice parameter c divided by number of layers considered (4). Average X-N (in-plane) and X-N (oop) are bond lengths between metal (X=Al,N) and N in the h-BN plane and out-of-plane N, respectively. ICOHP quantifies the strength of X-N bonds. ICOHP in-plane X-N and ICOHP oop X-N represent ICOHP of in-plane and out-of-plane X-N bond, respectively. ICOHP values for the doped flat hexagonal structures are shown in the parenthesis. h is the thickness of a h-BN monolayer with protruded Al/Ga atoms (see Figure ). P sp 3 is the spontaneous polarization. ∆E is the energy barrier for FE polarization switching; this also represents the energy difference between protruded FE and flat paraelectric phases (see Figure ).