The results from the resistivity and transmittance measurements are in line with the literature on In2O3 where the oxygen stoichiometry in the films which has been shown to impact both optical transmission and electrical conductivity of the films. The high concentration of oxygen vacancies causes our films to be more conducting than those reported in previous studies Tauc plots of the In2O3 films deposited with different water pulse lengths are shown in Fig. , indicating that the direct optical band gap varies between 4.04 and 4.22 eV with higher band gap for shorter water pulses. The bandgap is lower for higher oxygen content in the films. The obtained band gap (4.0 -4.2 eV) is comparable to previously reported values but is slightly higher than the expected range (3.5 -3.9 eV). The higher band gap is ascribed to the higher deposition temperatures used in our study, which are higher than what is typically employed in ALD of In2O3. From our XPS results (Table ), higher deposition temperatures render lower oxygen content and carbon incorporation in the films. We speculate that this leads to an increase of oxygen vacancies 42 that can supply free electrons in the material leading to an increase in the optical band gap. A higher temperature can also increase the optical band gap by decreasing the density of grain boundaries, leading to fewer electrons being trapped in grain boundaries, increasing the number of free electrons. This increase of band gap can be further explained by the gap widening phenomenon called the Burstein-Moss shift .