, where ε 1 (ω) (real part) describes the mate- rial's polarization response to an external electric field, and ε 2 (ω) (imaginary part) is associated with electronic transitions and optical absorption . This function is a crucial link between the macroscopic optical response of the material and its underlying electronic structure . In this study, the dielectric function of the materials was computed using the independent-particle approximation (IPA), as shown in it an essential parameter for evaluating the material's optical performance . A key observation from the dielectric function analysis is that the spectral dependence of ε(ω) across all the materials follows a similar trend, suggesting comparable electronic structures and band dispersions. Notably, the electronic bandgap is a critical factor influencing the optical response, and our study determined the bandgaps using both the PBE functional and the more accurate HSE hybrid functional to overcome the well-known underestimation of bandgaps in standard DFT calculations . The computed bandgaps using the PBE method were approximately 0.5 -1.0 eV, while the HSE functional provided a more precise estimation, revealing slightly larger bandgap values. This improved accuracy is particularly important for applications where precise control over electronic and optical properties is required, such as in next-generation semiconductor devices, photocatalysis, and energy-harvesting materials. This observation is consistent with the bandgap analysis presented in Figure (HSE results), which confirms the absence of inter-band transitions between the Valence Band Maximum (VBM) and the Conduction Band Minimum (CBM) within the energy gap. This suggests that no electronic states are available for optical excitations in this region, reinforcing the intrinsic semiconducting nature of the material. Figure (a-d) presents the computed frequency-dependent absorption coefficient, averaged over three distinct electric field orientations, which is a crucial parameter to assess optical behaviour in optoelectronic applications. The absorption coefficient, α(ω)), quantifies the extent of light attenuation as an electromagnetic wave propagates through a material. It is directly related to the imaginary part of the dielectric function and the extinction coefficient, as shown in Figure . This parameter determines the penetration depth of incident light, where a lower absorption coefficient corresponds to reduced light absorption by the material. The initial absorption peak for all the systems appears in the 1.0 to 2.0 eV range, while the highest absorption peak occurs at approximately 12.25 eV, placing it in the ultraviolet (UV) region. Notably, minimal absorption is observed at lower energy levels around 1.0 eV, indicating weak optical activity in this range. The high absorption coefficient, (α(ω)), reaching values on the order of 10 5 cm -1 , satisfies the essential criterion for the potential application of monolayers as effective ultraviolet (UV) absorbers. This strong absorption capability suggests their suitability for optoelectronic and photonic devices requiring efficient UV shielding and light-harvesting properties. The energy loss function, L(ω), as illustrated in Figure (eh), provides critical insights into plasmonic excitations within the studied monolayers. Prominent peaks are observed at approxi-mately 2.75 eV, 4.00 eV, and 8.50 eV for an electric field oriented parallel to the single-layer sheets, corresponding to (π + σ ) plasmon excitations. Notably, no significant peaks appear below 0.5 eV for either parallel or perpendicular polarizations (Figure in SI), suggesting the absence of low-energy plasmonic activity. However, faint resonances emerge within the 1.5-2.5 eV range, likely attributed to minor optical excitations. The plasmonic peaks exhibit a blueshift for the proposed monolayers, shifting toward higher energies while also becoming sharper. This shift occurs when the material reflects electromagnetic radiation frequencies lower than the plasma frequency, driven by conduction electrons' effective shielding of the external electric field. Conversely, when the radiation frequency exceeds the plasma frequency, the material becomes transparent to the incident electromagnetic waves due to the inability of the electrons to provide adequate shielding. This plasmonic behavior is crucial in determining the material's optical and electronic response, making it a promising candidate for applications in nanophotonics and optoelectronics.