Therefore, the EA of ZnSb 2 O 6 is significantly greater than that of the industry leading TCOs. Upon Ga-doping, the Fermi level is predicted to sit above the conduction band minimum, which means a work function nearly 1 eV larger than In 2 O 3 could be achieved. This large work function has tremendous implications in organic photovoltaics (OPVs) which rely entirely on the charge extraction capability of the positive and negative electrodes. A transparent anode with a large electron affinity allows for closer band alignment to low lying HOMOs (highest occupied molecular orbitals) in OPV devices, providing better Ohmic contacts, an increase in output voltage and an enhanced device efficiency. Furthermore, replacing organic hole-extracting layers like PEDOT:PSS with a metal oxide like ZnSb 2 O 6 could help to reduce the corrosion on the electrode. To engineer large work functions in existing TCOs, modulation of the conduction band is required by alloying with heavy, and sometimes toxic, elements (for example In 2-x Tl x O 3 and Sn 1-x Pb x O 2 ). Exploiting the native band alignment in ZnSb 2 O 6 is a much cheaper, safer and easier way of incorporating a large work function material into devices.