Additionally, the role of the β-hydrogen elimination to the overall process has not been unveiled yet, albeit the calculated thermodynamic properties imply that it could be a competing route. Based on this, it is important to delimitate the thermodynamic and kinetic aspects of an eventual precursor dissociation in gas phase environment, since it could alter the active species that is involved in the adsorption and subsequential reactions. In this context, the present work addresses the thermal decomposition of relevant In precursors, i.e. trimethylindium (TMI) and tris(N,N′-diisopropyl-2-dimethylamido-guanidinato (III) (ITG), for InN grown by atomic layer deposition (ALD). This goal is achieved by making use of a combined approach with density functional theory (DFT) and kinetic modelling (KM) methods.