Electron affinity (χ) is a critical parameter in device modeling, as it directly influences the energy band alignment between various layers in a device. Specifically, it plays a pivotal role in determining the valence band offset (VBO) and conduction band offset (CBO), which are key factors for optimizing charge carrier transport and minimizing recombination losses. These parameters are mathematically expressed as: Here, ꭓ PER is the electron affinity of the absorber material; χ HTL L and ꭓ ETL are the electron affinities of the hole transport layer (HTL) and electron transport layer (ETL), respectively. Eg HTL is the band gap of HTL, and Eg PER denotes the bandgap of the absorber layer.