It is worth noting that all samples exhibit an estimated average grain size between ~ 10 and 30 nm, which is of the order of the observed nano-islands dimensions (~ 40 nm thick). We observe that the smallest potential shows the largest grain size, and at potentials more cathodic than -1.3V a steady decrease in grain size with voltage occurs. We also observe that after this critical potential of -1.3 V, the standard deviation of both the linewidth and frequency significantly increases. This increase in the standard deviation suggests that the grain size is less homogeneous when InAs is grown with larger potentials.