The data in Table and Fig. establish that DLPNO errors obtained using cc-pVDZ are representative of the errors in larger basis sets. We can thus use RI-MP2/cc-pVDZ calculations for S66 to establish a baseline expectation before proceeding to larger systems, and DLPNO errors at the RI-MP2/cc-pVDZ level are plotted in Fig. for all of the S66 dimers. The data are partitioned into three standard subsets of S66: hydrogen-bonded dimers (for which electrostatics dominates dispersion), dispersion-dominated complexes, and dimers where dispersion and electrostatics are comparable in magnitude. Even for the loose-MP2 thresholds, all of the errors are < 0.16 kcal/mol. This observation is notable because the loose PNO thresholds for MP2 are comparable to the tight thresholds for CCSD(T), meaning that DLPNO-CCSD(T) calculations typically involve more aggressive truncation of the PNOs as compared to DLPNO-MP2 calculations. We have performed both sets of calculations for the S66 dimers, and Fig. juxtaposes the DLPNO errors in either case, as a function of T CutPNO for the CCSD(T) set of thresholds. (The corresponding convergence plots as a percentage of ∆E can be found in Fig. .)