The reason for overall performance, generation current, and recombination current ratio improvement can be described in Figure . The reason for the ratio between generation and recombination ratio improvement can be described in Figure . On point A, the back surface field is generated between back contact and HTM due to the optimization back contact of the cell. This back surface field reduces the recombination between HTM and back contact. On points B and C, VBO and CBO are induced due to the introduction of a thin (30nm) intrinsic absorber layer and optimization of the electron affinity of the absorber layer. These VBO and CBO reduce the recombination on the interface between the absorber and ETM. Additionally, the interface between HTM and absorber is also improved. Hence, the performance of the optimized cell is improved compared to the initial cell.