prepared the N-doped graphene by activation with KOH accompanied by thermal annealing at 700 °C for 1 h under argon atmosphere using melamine as the N-source . The resultant material has exhibited the nitrogen doping level of 20.51 at.%. The specific capacitance of KOH activated N-doped graphene was found to be 132.4 F g -1 at 0.1 A g -1 in 1 M KOH aqueous solution which is 5.2 times greater than the N-doped graphene without KOH activation which can be correlated to the fact that the SBET of KOH activated N-doped graphene is found to be 555 m 2 g -1 which is appreciably higher than the N-doped graphene without KOH activation (27