As atomic layer deposition (ALD) processes continue to be developed, the necessity for investigating reaction mechanisms remains important to understand both new reaction chemistries and existing processes. Thus, studying reaction mechanisms is crucial for identifying appropriate reactions to achieve desired materials and material combinations, especially as thin films in device structures reach thicknesses achievable within just a few ALD cycles. The trend towards shrinking device dimensions necessitates, for example, the deposition of thinner films within higher aspect ratio holes and vias. In this context, ALD is an ideal method for growing depositing conformal films as it operates through two consecutive self-limiting reactions that take place between a gaseous precursor and the solid substrate, depositing a thin film through iteratively executing these surface reactions.