The robustness of the C 7 H 8 process in growing highly <111>-oriented 3C-SiC was retained even on non-flat substrates. Figure displays the 3C-SiC multilayer coating deposited on a graphite substrate with step features. It can be observed that the multilayer coating follows the step nicely and the growth of highly <111>-oriented 3C-SiC interlayer perpendicular to the growth surface is not affected by the geometry of the substrate. Well-defined multilayer coatings were also obtained on structured graphite substrates with vertical walls. On these substrates, the step corner was covered nicely with 3C-SiC multilayer coatings and the growth of highly <111>-oriented SiC was not hindered by the substrate geometry. This study not only highlights the potential of precursors which can direct the growth, such as toluene in CVD, but also opens a simpler way to obtain layered coating of varying orientation.