for the bilayers in Table . Biaxial strain of MoS 2 up to 8% was reported by Blundo et al., which is close to its rapture strain, Zhang et al. realised a strain of 8% the Zr 2 CO 2 MXene structure, and a number of other strains and straining setups were reviewed in Ref.. Deep elastic strain, which is overstraining 2D materials beyond 1 2 of the material's theoretical strength, was realised for graphene, hexagonal boron nitride, MoS 2 and WoS 2 . Thus, it is technologically possible to overstrain a 2D layers by a + |b|% before binding it to another 2D layer. Note that, generally, a does not necessarily have to be equal to -b; the strain values a and b should be obtained by DFT computations, such as in the present work. Additionally, the layers do not necessarily have to be different; it might be possible that applying opposing strains to multilayer graphene or hexagonal boron nitride might result in a FvdWH. Also, different straining schemes, whether uniaxial, biaxial, or shear strains, should be examined. The fact that 8 out of 9 structures in Table are more energetically stable when frustrated means that frustration can be a novel approach for creating new stable layered materials. Given that, in principle, the frustrated bilayer can have a different electronic bandgap from the unfrustrated bilayer, as examined in Figure and Table of the Supporting Information, FvdWHs can be a platform for electronic bandgap tuning.