Antimony sulfide (Sb2S3) has attracted interest in the photovoltaic (PV) community, primarily in solid state sensitized solar cells though more recently with thin film solar cells. The development of this material for PV follows a similar trend to antimony selenide (Sb2Se3), another promising light absorber material. It has an analogous crystal structure with Sb2Se3 (stibnite) and a larger band gap (1.7 eV) and hence a larger photovoltage could be obtained from Sb2S3 PV devices. It has the added advantage over Sb2Se3 that sulfur is much more earth abundant than selenium and hence would be applicable for large scale solar energy conversion applications. Choi et al. showed that a simple treatment of the Sb2S3 layer with thioacetamide (TA) was able to eliminate defects in the Sb2S3 layer and hence they obtained a 7.5 % efficiency, a record for a fully solid-state chalcogenide-sensitized solar cell at that time (2014). Savadogo et al. reported an ITO (indium tin oxide)/Sb2S3/Pt solar cell with an efficiency of 5.5 % and the highest ever reported open-circuit voltage of 770 mV for this material. For a typical thin film device architecture, the best performing Sb2S3 solar cell is from Yuan et al. using an ITO/CdS/Sb2S3/Au architecture (3.5 %). Despite the broad interest and promising efficiency in PV research, Sb2S3 has not yet been explored extensively for photoelectrochemical water splitting (PEC) applications. Sb2S3 has been employed as a heterojunction partner for WO3 and TiO2 photoanodes for water splitting. DeAngelis et al. reported an Sb2S3 photoanode for water splitting yielding photocurrent densities exceeding 4 mA cm -2 , however, very low faradaic efficiencies for oxygen evolution were observed, and hence the current obtained was primarily due to photocorrosion. In this work, we report a Sb2S3 photocathode using TiO2 and In2S3 as buffer layers for PEC water splitting. Sb2S3 thin films were fabricated using a simple, relatively low temperature sulfurization (240°C-300°C) of Sb metal. Phase pure Sb2S3 thin films were obtained and photocathodes were fabricated using TiO2 as a buffer layer/protection layer, which yielded high photocurrents of ~ 3 mA cm -2 at 0 V vs. RHE in 1 M H2SO4 when coated with platinum (Pt) as the hydrogen evolution reaction (HER) catalyst. Using X-ray photoelectron spectroscopy (XPS), the band alignment of the Sb2S3/TiO2 junction was investigated and a conduction band offset (CBO) of 0.7 eV was found. The measured CBO partly explains the low photovoltage in the Sb2S3/TiO2 junction, and we sought to mitigate this by using a buffer layer with a higher lying conduction band, which should lessen the CBO. A higher photovoltage was indeed obtained using In2S3 as buffer layer (0.15 V increase), which has a higher conduction band maximum than TiO2. To the best of our knowledge, Sb2S3/In2S3 photocathodes investigated here have not yet been reported for photoelectrochemical water splitting.