Figure ) shows a scheme of the fabrication of resistive sensors with variable degree of reduction on flexible PI substrates via photocatalytic patterning. Multilayered hybrid films containing GO and TNPs or TNRs (four LbL-SC cycles) were fabricated following the method illustrated in figure . First, GO/TNC films were deposited on plasma-treated PI substrates equipped with two IDE structures (50 nm Au). Film sections on the IDE structures were selectively exposed to DUV light through a quartz mask. The exposure time was adjusted depending on the desired degree of reduction. Next, the mask was rotated by 180 • , and the film covering the second IDE area was exposed to DUV light. Likewise, pairs of sensors with adjusted GO/rGO ratios, i.e., a higher degree of reduction (H) and a lower degree of reduction (L) were obtained. Depending on the incorporated TNCs, the DUV exposure was adjusted for each film area to obtain comparable baseline conductance for TNP-and TNR-based films. Multilayered films were used as resistive sensors since they enable higher conductances, and also allow for tuning the GO/rGO ratio more precisely.