Strain and defect engineering are powerful techniques for tailoring the optoelectronic properties of two-dimensional (2D) materials. However, the interaction between mechanical strain and defects in these systems is poorly understood . Strain engineering, or "straintronics," has proven particularly effective for 2D materials due to their ability to endure significant elastic strain before deformation or fracture. For instance, graphene can withstand up to 18% elastic strain , while MoS2 can handle up to 11% . We examined the impact of low defect concentrations under external axial tensile strain along 2D plane. Although compressive strain is possible, significant values are unlikely due to the tendency of 2D materials to buckle or fold. Therefore, we simulated the effects of small compressive/expansion strain up to ±2.0%. In Figure ), we have demonstrated the variation in bandgap as a function of applied strain (both compression and expansion) along the x-and y directions.