From TG analysis of AgInk, the sintering temperature of 300 °C is selected since it is enough to make Ag electrode work while thermal damage to Ag/p-Si interface should be minimized during the sintering procedure. To investigate the electrical characteristics by sintering, AgInk was patterned onto glass and sintered at 300 °C for 5-30 min. As shown in Figure , patterned AgInk transformed into metallic-colored Ag thin films in each sintering times. The results of sheet resistance of the films as a function of the sintering time are shown in Figure . As increasing sintering time, sheet resistance decreases from 0.114 Ω/□ at 5 min to 0.046 Ω/□ at 10 min and becomes constant to be c.a. 0.04 Ω/□ from 10 min to 30 min. These results mean sintering process of AgInk ends up to 15 min completely, where the solvent and the resin in the AgInk are evaporated and decomposed, followed by adhering AgNPs through decomposition of capping molecules on surfaces and grain boundary diffusion. Using the value of film thickness measured from scanning electron microscopic (SEM) observations (vide infra), the electrical resistivity of Ag film is estimated to be 2×10 -5 Ω•cm at 15 min which is only an order of magnitude higher than the resistivity of metal Ag (1.6×10 -6 Ω•cm). Generally, the electrical resistivity of the electrodes made from conductive inks tends to be larger, where the increment can be resulted from some reasons such as organic residuals and boundary defects, so on. Since a low resistivity was achieved using with AgInk, Ag electrode was also formed on p-Si by squeegee method as one of printing methods. The resulting SBD showed typical diode characteristics, which is the first demonstration of the silicon-based SBD fabricated by printing method (printed SBD). Figure and D show an experimental set-up for I-V measurement of the printed SBD and the equivalent circuit of the printed SBD, respectively. As the SBD structure, square shaped Ag electrodes (designed size is 0.15×0.15 cm 2 ) were formed on a side of the p-Si. On the other side of the p-Si, an aluminium (Al) ohmic contact was provided by vapor deposition (Figure ). In the structure, Ag/p-Si interface should show the electrical behavior of the SBD, which are predicted from the work function of Ag and the Fermi-level of Si. And the SBH for the ideal diode of evaporated Ag electrode formed on p-Si have been reported to be 0.55-0.54 eV. Such a SBD can be represented by the equivalent circuit of Figure , consisting of ideal factor (n), SBH (B), and series resistance (rs).