The growth of single crystals via the Optical Floating zone (OFZ) growth method was based on the powder reported in section 2.1 as starting materials. In literature, the reported growth rates of GAGG crystals using the Czochralski (CZ) method typically range from 0.5 to 2 mm h -1 [10b, 13b, 24] , while the OFZ method is comparatively faster, with rates around 1 to 8 mm h . In the initial trials, we encountered In2O3 evaporation and difficulties in stabilizing the molten zone. In agreement, It has been reported that during the synthesis of GIGG single crystals by use of the Optical Float Zone method, Indium oxide evaporation was observed due to the relatively high process temperatures . Consequently, when using stoichiometric amounts of precursors as required for the targeted composition, our GIGG single crystals were non-stoichiometric and showed significantly reduced Indium contents (see Figure ).