The chemical composition of the as-deposit coatings was investigated by X-ray diffraction (XRD) operating at a voltage of 45 kV and a current of 40 mA. The θ/2θ-scan was performed at 2θ angles between 20° and 140° with Cu Kα radiation (λ= 1.54 Å). A Ni-filter was placed in front of the detector for the removal of the Cu Kβ line. The resulting diffractograms were compared with the Power Diffraction File (PDF) cards #00-029-1129 (3C-SiC) and #00-056-0159 (graphite). The texture coefficient (TC) was utilized to access the preferred growth orientation of the SiC samples and was calculated as follows :