Fig. shows how the GPC varies with the TMA pulse time and NH3 pulse time: for the plasma (Fig. ) and thermal (Fig. ) ALD processes. The TMA pulse shows a self-limiting surface chemistry, about 0.2 s pulse is needed to reach saturation in the GPC for both the plasma and thermal processes. The NH3 plasma shows a saturating surface chemistry with exposure times higher than 7 seconds (Fig. ). The thermal NH3 pulse required 12 seconds or longer for selflimiting surface chemistry, albeit less clear than the plasma process (Fig. ). It can be noted that the plasma process saturates at 0.83 Å/cycle while the thermal process saturates at approximately 1 Å/cycle. The plasma process showed a temperature window where the GPC is not affected significantly by temperature between 250 and 325 °C (Fig. ). We therefore carried out saturation growth experiments for this process at 300 °C which is within this temperature window. The thermal process showed no clear temperature window where the GPC is not affected by the temperature (Fig. ) and very little films were deposited at temperatures below 300 °C. From this, we used 350 °C for studies of the thermal process. Nearly stoichiometric and polycrystalline films were deposited at 300 °C and 350 °C for the plasma and thermal processes respectively, see supporting information Table and Figs. and.